Showing 1–8 of 8 results for author: Gassenq, A

Spatially-Controlled Planar Czochralski Growth of Low-Loss Phase Change Materials for Programmable Photonics

Authors: Fouad Bentata, Arnaud Taute, Capucine Laprais, Régis Orobtchouk, Eva Kempf, Alban Gassenq, Yves Pipon, Michele Calvo, Stéphane Monfray, Guillaume Saint-Girons, Nicolas Baboux, Hai Son Nguyen, Xavier Letartre, Lotfi Berguiga, Patrice Genevet, Sébastien Cueff

Abstract: Photonic integrated devices are progressively evolving beyond passive components into fully programmable systems, notably driven by the progress in chalcogenide phase-change materials (PCMs) for non-volatile reconfigurable nanophotonics. However, the stochastic nature of their crystal grain formation results in strong spatial and temporal crystalline inhomogeneities. Here, we propose the concept o… ▽ More Photonic integrated devices are progressively evolving beyond passive components into fully programmable systems, notably driven by the progress in chalcogenide phase-change materials (PCMs) for non-volatile reconfigurable nanophotonics. However, the stochastic nature of their crystal grain formation results in strong spatial and temporal crystalline inhomogeneities. Here, we propose the concept of spatially-controlled planar Czochralski growth, a novel method for programming the quasi-monocrystalline growth of low-loss Sb2S3 PCM, leveraging the seeded directional and progressive crystallization within confined channels. This guided crystallization method is experimentally shown to circumvent the current limitations of conventional PCM-based nanophotonic devices, including a multilevel non-volatile optical phase-shifter exploiting a silicon nitride-based Mach-Zehnder interferometer, and a programmable metasurface with spectrally reconfigurable bound state in the continuum. Precisely controlling the growth of PCMs to ensure uniform crystalline properties across large areas is the cornerstone for the industrial development of non-volatile reconfigurable photonic integrated circuits. △ Less

Submitted 23 April, 2025; originally announced April 2025.

Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications

Authors: Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Denis Rouchon, Julie Widiez, Johan Rothman, Jean-Michel Hartmann, Alexei Chelnokov, Vincent Reboud, Vincent Calvo

Abstract: Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be the… ▽ More Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be then partially etched to keep only localized strained-Ge micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were demonstrated bonded on Si. Our approach allows to envision integrated strained-Ge on Si platform for mid-infrared integrated optics. △ Less

Submitted 18 May, 2017; originally announced May 2017.

Comments: 9 pages, 4 figures

Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K

Authors: V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, V. Calvo

Abstract: Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resu… ▽ More Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K. △ Less

Submitted 21 April, 2017; originally announced April 2017.

Comments: 15 pages with supplementary information. 6 figures and 2 tables in total

Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents

Authors: A. Gassenq, L. Milord, J. Aubin, N. Pauc, K. Guilloy, J. Rothman, D. Rouchon, A. Chelnokov, J. M. Hartmann, V. Reboud, V. Calvo

Abstract: GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be… ▽ More GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be found in the literature. They were deduced from studies on low Sn content GeSn layers (i.e. xSn<8%) or on GeSiSn layers. In this work, we have calibrated the GeSn Raman relationship for really high Sn content GeSn binaries (6<xSn<15%). We have used fully strained GeSn layers and fully relaxed GeSn under-etched microstructures to clearly differentiate the contributions of strain and chemical composition on the Ge-Ge Raman spectral shift. We have shown that the GeSn Raman-strain coefficient for high Sn contents is higher compared to that for pure Ge. △ Less

Submitted 13 January, 2017; originally announced January 2017.

Comments: 14 pages, 4 figures, submitted to Applied Physics Letters 2017

Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain

Authors: K. Guilloy, N. Pauc, A. Gassenq, Y. M. Niquet, J. M. Escalante, I. Duchemin, S. Tardif, G. Osvaldo Dias, D. Rouchon, J. Widiez, J. M. Hartmann, R. Geiger, T. Zabel, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, V. Calvo

Abstract: Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 %… ▽ More Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress germanium along [100] up to $\varepsilon_{100}$=3.3 % longitudinal strain and then perform electro-absorption spectroscopy. We accurately measure the energy gap between the conduction band at the $Γ$ point and the light- and heavy-hole valence bands. While the experimental results agree with the conventional linear deformation potential theory up to 2 % strain, a significantly nonlinear behavior is observed at higher strains. We measure the deformation potential of germanium to be a = -9.1 $\pm$ 0.3 eV and b = -2.32 $\pm$ 0.06 eV and introduce a second order deformation potential. The experimental results are found to be well described by tight-binding simulations. These new high strain coefficients will be suitable for the design of future CMOS-compatible lasers and opto-electronic devices based on highly strained germanium. △ Less

Submitted 24 June, 2016; v1 submitted 6 June, 2016; originally announced June 2016.

Accurate strain measurements in highly strained Ge microbridges

Authors: A. Gassenq, S. Tardif, K. Guilloy, G. Osvaldo Dias, N. Pauc, I. Duchemin, D. Rouchon, J-M. Hartmann, J. Widiez, J. Escalante, Y-M. Niquet, R. Geiger, T. Zabel, H. Sigg, J. Faist, A. Chelnokov, F. Rieutord, V. Reboud, V. Calvo

Abstract: Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron b… ▽ More Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression. △ Less

Submitted 15 April, 2016; originally announced April 2016.

Comments: 10 pages, 4 figures

Journal ref: Appl. Phys. Lett. 108, 241902 (2016)

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering

Authors: Samuel Tardif, Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Guilherme Osvaldo Dias, Jean-Michel Hartmann, Julie Widiez, Thomas Zabel, Esteban Marin, Hans Sigg, Jérôme Faist, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, Jean-Sébastien Micha, Odile Robach, François Rieutord

Abstract: Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mappi… ▽ More Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices. △ Less

Submitted 24 June, 2016; v1 submitted 21 March, 2016; originally announced March 2016.

Comments: 28 pages, 10 figures

Uniaxially stressed germanium with fundamental direct band gap

Authors: R. Geiger, T. Zabel, E. Marin, A. Gassenq, J. -M. Hartmann, J. Widiez, J. Escalante, K. Guilloy, N. Pauc, D. Rouchon, G. Osvaldo Diaz, S. Tardif, F. Rieutord, I. Duchemin, Y. -M. Niquet, V. Reboud, V. Calvo, A. Chelnokov, J. Faist, H. Sigg

Abstract: We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a… ▽ More We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain. △ Less

Submitted 10 December, 2015; originally announced March 2016.

Comments: 9 pages, 8 figures