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Unveiling Phonon Contributions to Thermal Transport and the Failure of the Wiedemann-Franz Law in Ruthenium and Tungsten Thin Films
Authors:
Md. Rafiqul Islam,
Pravin Karna,
Niraj Bhatt,
Sandip Thakur,
Helge Heinrich,
Daniel M. Hirt,
Saman Zare,
Christopher Jezewski,
Rinus T. P. Lee,
Kandabara Tapily,
John T. Gaskins,
Colin D. Landon,
Sean W. King,
Ashutosh Giri,
Patrick E. Hopkins
Abstract:
Thermal transport in nanoscale interconnects is dominated by intricate electron-phonon interactions and microstructural influences. As copper faces limitations at the nanoscale, tungsten and ruthenium have emerged as promising alternatives due to their substantial phonon contributions to thermal conductivity. Metals with stronger phonon-mediated thermal transport are particularly advantageous in n…
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Thermal transport in nanoscale interconnects is dominated by intricate electron-phonon interactions and microstructural influences. As copper faces limitations at the nanoscale, tungsten and ruthenium have emerged as promising alternatives due to their substantial phonon contributions to thermal conductivity. Metals with stronger phonon-mediated thermal transport are particularly advantageous in nanoscale architectures, where phonons are less sensitive to size effects than electrons. Here, we show that phonons play a comparable role to electrons in the thermal transport of ruthenium and tungsten thin films, evidenced by deviations from the classical Wiedemann-Franz law. Elevated Lorenz numbers-1.9 and 2.7 times the Sommerfeld value for ruthenium and tungsten, respectively-indicate phonon contributions of 45% and 62% to total thermal conductivity. Comparisons of in-plane thermal conductivity from steady-state thermoreflectance and electron relaxation times from infrared ellipsometry reveal that phonon-mediated transport is insensitive to microstructural variations and scaling. Ultrafast infrared pump-probe measurements show that ruthenium exhibits a higher electron-phonon coupling factor than tungsten, consistent with the differing contributions of carriers to thermal transport. Molecular dynamics simulations and spectral energy density analysis confirm substantial phonon-driven thermal transport and mode-dependent phonon lifetimes. These results offer insights into phonon-driven thermal transport and provide design principles for selecting interconnects with enhanced thermal management.
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Submitted 12 May, 2025;
originally announced May 2025.
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Ruddlesden-Popper chalcogenides push the limit of mechanical stiffness and glass-like thermal conductivity in single crystals
Authors:
Md Shafkat Bin Hoque,
Eric R. Hoglund,
Boyang Zhao,
De-Liang Bao,
Hao Zhou,
Sandip Thakur,
Eric Osei-Agyemang,
Khalid Hattar,
Ethan A. Scott,
Mythili Surendran,
John A. Tomko,
John T. Gaskins,
Kiumars Aryana,
Sara Makarem,
Adie Alwen,
Andrea Hodge,
Ganesh Balasubramanian,
Ashutosh Giri,
Tianli Feng,
Jordan A. Hachtel,
Jayakanth Ravichandran,
Sokrates T. Pantelides,
Patrick E. Hopkins
Abstract:
Insulating materials featuring ultralow thermal conductivity for diverse applications also require robust mechanical properties. Conventional thinking, however, which correlates strong bonding with high atomic-vibration-mediated heat conduction, led to diverse weakly bonded materials that feature ultralow thermal conductivity and low elastic moduli. One must, therefore, search for strongly-bonded…
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Insulating materials featuring ultralow thermal conductivity for diverse applications also require robust mechanical properties. Conventional thinking, however, which correlates strong bonding with high atomic-vibration-mediated heat conduction, led to diverse weakly bonded materials that feature ultralow thermal conductivity and low elastic moduli. One must, therefore, search for strongly-bonded single crystals in which heat transport is impeded by other means. Here, we report intrinsic, glass-like, ultralow thermal conductivity and ultrahigh elastic-modulus/thermal-conductivity ratio in single-crystalline Ruddlesden-Popper Ban+1ZrnS3n+1, n = 2,3, which are derivatives of BaZrS3. Their key features are strong anharmonicity and intra-unit-cell rock-salt blocks. The latter produce strongly bonded intrinsic superlattices, impeding heat conduction by broadband reduction of phonon velocities and mean free paths and concomitant strong phonon localization. The present study initiates a paradigm of mechanically stiff phonon glasses.
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Submitted 24 October, 2024; v1 submitted 5 December, 2023;
originally announced December 2023.
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Validation of the Wiedemann-Franz Law in solid and molten tungsten above 2000 K through thermal conductivity measurements via steady state temperature differential radiometry
Authors:
Milena Milich,
Hunter B. Schonfeld,
Konstantinos Boboridis,
Davide Robba,
Luka Vlahovic,
Rudy Konings,
Jeffrey L. Braun,
John T. Gaskins,
Niraj Bhatt,
Ashutosh Giri,
Patrick E. Hopkins
Abstract:
We measure the thermal conductivity of solid and molten tungsten using Steady State Temperature Differential Radiometry. We demonstrate that the thermal conductivity can be well described by application of Wiedemann-Franz Law to electrical resistivity data, thus suggesting the validity of Wiedemann-Franz Law to capture the electronic thermal conductivity of metals in their molten phase. We further…
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We measure the thermal conductivity of solid and molten tungsten using Steady State Temperature Differential Radiometry. We demonstrate that the thermal conductivity can be well described by application of Wiedemann-Franz Law to electrical resistivity data, thus suggesting the validity of Wiedemann-Franz Law to capture the electronic thermal conductivity of metals in their molten phase. We further support this conclusion using ab initio molecular dynamics simulations with a machine-learned potential. Our results show that at these high temperatures, the vibrational contribution to thermal conductivity is negligible compared to the electronic component.
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Submitted 2 September, 2023;
originally announced September 2023.
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On the thermal and mechanical properties of Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$O across the high-entropy to entropy-stabilized transition
Authors:
Christina M. Rost,
Daniel L. Schmuckler,
Clifton Bumgardner,
Md Shafkat Bin Hoque,
David R. Diercks,
John T. Gaskins,
Jon-Paul Maria,
Geoffrey L. Brennecka,
Xiadong Li,
Patrick E. Hopkins
Abstract:
As various property studies continue to emerge on high entropy and entropy-stabilized ceramics, we seek further understanding of property changes across the phase boundary between \enquote{high-entropy} and \enquote{entropy-stabilized}. The thermal and mechanical properties of bulk ceramic entropy stabilized oxide composition Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$O are investigated acr…
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As various property studies continue to emerge on high entropy and entropy-stabilized ceramics, we seek further understanding of property changes across the phase boundary between \enquote{high-entropy} and \enquote{entropy-stabilized}. The thermal and mechanical properties of bulk ceramic entropy stabilized oxide composition Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$O are investigated across this critical transition temperature via the transient plane-source method, temperature-dependent X-ray diffraction, and nano-indentation. Thermal conductivity remains constant within uncertainty across the multi-to-single phase transition at a value of ~2.5 W/mK, while the linear coefficient of thermal expansion increases nearly 24 % from 10.8 to 14.1 x 10$^{-6}$ K$^{-1}$. Mechanical softening is also observed across the transition.
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Submitted 27 November, 2022;
originally announced November 2022.
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Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices
Authors:
Kiumars Aryana,
John T. Gaskins,
Joyeeta Nag,
Derek A. Stewart,
Zhaoqiang Bai,
Saikat Mukhopadhyay,
John C. Read,
David H. Olson,
Eric R. Hoglund,
James M. Howe,
Ashutosh Giri,
Michael K. Grobis,
Patrick E. Hopkins
Abstract:
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close…
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Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.
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Submitted 10 November, 2020;
originally announced November 2020.
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Thermal boundary conductance across epitaxial ZnO/GaN interfaces: Assessment of phonon gas models and atomistic Green's function approaches for predicting interfacial phonon transport
Authors:
John T. Gaskins,
George Kotsonis,
Ashutosh Giri,
Christopher T. Shelton,
Edward Sachet,
Zhe Cheng,
Brian M. Foley,
Zeyu Liu,
Shenghong Ju,
Junichiro,
Mark S. Goorsky,
Samuel Graham,
Tengfei Luo,
Asegun Henry,
Jon-Paul Maria,
Patrick E. Hopkins
Abstract:
We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous ex…
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We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous experimental data, suggest that the TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the "vibrational mismatch" concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as $490\lbrack +150, -110\rbrack$ MW m$^{-2}$ K$^{-1}$. The disagreement among the DMM and AGF and the experimental data these elevated temperatures suggests a non-negligible contribution from additional modes contributing to TBC that not accounted for in the fundamental assumptions of these harmonic formalisms, such as inelastic scattering. Given the high quality of these ZnO/GaN interface, these results provide an invaluable critical and quantitive assessment of the accuracy of assumptions in the current state of the art of computational approaches for predicting the phonon TBC across interfaces.
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Submitted 25 October, 2017;
originally announced October 2017.
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Small-mass atomic defects enhance vibrational thermal transport at disordered interfaces with ultrahigh thermal boundary conductance
Authors:
Ashutosh Giri,
Sean W. King,
William A. Lanford,
Antonio R. Mei,
Devin Merril,
Liza Ross,
Ron Oviedo,
John Richards,
David H. Olson,
Jeffrey L. Braun,
John T. Gaskins,
Freddy DeAngelis,
Asegun Henry,
Patrick E. Hopkins
Abstract:
The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC).$^1$ However, recent computational works have suggested that interfacial defects can enhance this thermal boundary conductance through emergence of unique vibrations that are intrinsic to the materia…
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The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC).$^1$ However, recent computational works have suggested that interfacial defects can enhance this thermal boundary conductance through emergence of unique vibrations that are intrinsic to the material interface and defect atoms,$^{2-6}$ a finding that contradicts traditional theory and conventional understanding. By manipulating the local heat flux of atomic vibrations that comprise these interfacial modes, in principle, the TBC can be increased. In this work, we provide evidence that interfacial defects can enhance the TBC across interfaces through the emergence of unique high frequency vibrational modes that arise from atomic mass defects at the interface with relatively small masses. We demonstrate ultrahigh TBC at amorphous SiOC:H/SiC:H interfaces, approaching 1 GW m$^{-2}$ K$^{-1}$, that is further increased through the introduction of nitrogen defects. The fact that disordered interfaces can exhibit such high conductances, which can be further increased with additional defects offers a unique direction in controlling interfacial thermal transport that becomes important in manipulating heat transfer across materials with high densities of interfaces.
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Submitted 25 October, 2017;
originally announced October 2017.
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Steady-State Thermal Analysis of an Integrated 160 GHz Balanced Quadrupler Based on Quasi-Vertical Schottky Diodes
Authors:
Souheil Nadri,
Linli Xie,
Naser Alijabbari,
John T. Gaskins,
Brian M. Foley,
Patrick E. Hopkins,
Robert M. Weikle II
Abstract:
This work reports on a steady-state thermal analysis of a 160 GHz balanced quadrupler, based on a quasi-vertical varactor Schottky diode process, for high power applications. The chip is analyzed by solving the heat equation via the 3D finite element method. Time-Domain Thermoreflectance (TDTR) was used to measure the thermal conductivity of the different materials used in the model. A maximum ano…
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This work reports on a steady-state thermal analysis of a 160 GHz balanced quadrupler, based on a quasi-vertical varactor Schottky diode process, for high power applications. The chip is analyzed by solving the heat equation via the 3D finite element method. Time-Domain Thermoreflectance (TDTR) was used to measure the thermal conductivity of the different materials used in the model. A maximum anode temperature of 64.9 C was found from the simulation. The addition of an extra beam lead connected to the block, for heat sinking, was found to reduce this maximum temperature to 41.0 C.
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Submitted 8 December, 2015;
originally announced December 2015.
