-
Efficient infrared sunlight absorbers based on gold-covered, inverted silicon pyramid arrays
Authors:
Jinhui Hu,
Luis A. Pérez,
Juan Luis Garcia-Pomar,
Agustín Mihi,
Miquel Garriga,
M. Isabel Alonso,
Alejandro R. Goñi
Abstract:
The transparency of silicon in the infrared region enables the design of nano/microstructures for implementation in devices to harvest the infrared (IR) part of the solar spectrum. Herein we report a strategy that uses arrays of inverted silicon pyramids covered with a thin gold film, which exhibit substantial light absorption in the infrared spectral range (below the gap of Si). The absorption st…
▽ More
The transparency of silicon in the infrared region enables the design of nano/microstructures for implementation in devices to harvest the infrared (IR) part of the solar spectrum. Herein we report a strategy that uses arrays of inverted silicon pyramids covered with a thin gold film, which exhibit substantial light absorption in the infrared spectral range (below the gap of Si). The absorption stems from the resonant excitation at infrared wavelengths of surface-plasmon polaritons at the metal/dielectric interface mainly by tuning size and separation of the inverted pyramids. The array-parameters optimization proceeded by iteration of the calculation and measurement of the infrared response using finite difference time-domain simulations and Fourier-transform IR spectroscopy, respectively. We show two fabrication routes for this kind of metal/silicon metamaterials either by photolithography or scalable nanoimprint techniques for a seamless integration in optoelectronic fabrication processes.
△ Less
Submitted 29 September, 2021;
originally announced September 2021.
-
On the role of the electron-phonon interaction in the temperature dependence of the gap of lead halide perovskites
Authors:
A. Francisco-López,
B. Charles,
O. J. Weber,
M. I. Alonso,
M. Garriga,
M. Campoy-Quiles,
M. T. Weller,
A. R. ~Goñi
Abstract:
Lead halide perovskites are causing a change of paradigm in photovoltaics. Among other peculiarities, these perovskites exhibit an atypical temperature dependence of the fundamental optical gap: It decreases in energy with decreasing temperature. So far reports ascribe such a behavior to a particularly strong electron-phonon renormalization of the band gap, neglecting completely contributions from…
▽ More
Lead halide perovskites are causing a change of paradigm in photovoltaics. Among other peculiarities, these perovskites exhibit an atypical temperature dependence of the fundamental optical gap: It decreases in energy with decreasing temperature. So far reports ascribe such a behavior to a particularly strong electron-phonon renormalization of the band gap, neglecting completely contributions from thermal expansion effects. However, high pressure experiments performed, for instance, on the archetypal perovskite MAPbI$_3$, where MA stands for methylammonium, yield a negative pressure coefficient for the gap of the tetragonal room-temperature phase, which speaks against the assumption of a negligible gap shift due to thermal expansion. On the basis of the high pressure results, we show here that for MAPbI$_3$ the temperature-induced gap renormalization due to electron-phonon interaction can only account for about 40\% of the total energy shift, thus implying thermal expansion to be the dominant term. Furthermore, this result possesses general validity, holding also for the tetragonal or cubic phase, stable at ambient conditions, of other halide perovskite counterparts.
△ Less
Submitted 25 March, 2019;
originally announced March 2019.
-
Optical functions and electronic structure of CuInSe2, CuGaSe2, CuInS2, and CuGaS2
Authors:
M. I. Alonso,
K. Wakita,
J. Pascual,
M. Garriga,
N. Yamamoto
Abstract:
We report on the complex dielectric tensor components of four chalcopyrite semiconductors in the optical energy range (1.4-5.2 eV, from 0.9 eV for CuInSe2) determined at room temperature by spectroscopic ellipsometry. Our results were obtained on single crystals of CuInSe2, CuGaSe2, CuInS2, and CuGaS2. Values of refractive indices n, extinction coefficients k and normal-incidence reflectivity R…
▽ More
We report on the complex dielectric tensor components of four chalcopyrite semiconductors in the optical energy range (1.4-5.2 eV, from 0.9 eV for CuInSe2) determined at room temperature by spectroscopic ellipsometry. Our results were obtained on single crystals of CuInSe2, CuGaSe2, CuInS2, and CuGaS2. Values of refractive indices n, extinction coefficients k and normal-incidence reflectivity R in the two different polarizations are given and compared with earlier data where available. We analyze in detail the structures of the dielectric function observed in the studied energy region. Critical-point parameters of electronic transitions are obtained from fitting of numerically calculated second-derivative spectra. Experimental energies and polarizations are discussed on the basis of published band structure calculations.
△ Less
Submitted 4 December, 2001;
originally announced December 2001.
-
Optical studies of gap, hopping energies and the Anderson-Hubbard parameter in the zigzag-chain compound SrCuO2
Authors:
Z. V. Popovic,
V. A. Ivanov,
M. J. Konstantinovic,
A. Cantarero,
J. Martinez-Pastor,
D. Olguin,
M. I. Alonso,
M. Garriga,
O. P. Khuong,
A. Vietkin,
V. V. Moshchalkov
Abstract:
We have investigated the electronic structure of the zigzag ladder (chain) compound SrCuO2 combining polarized optical absorption, reflection, photoreflectance and pseudo-dielectric function measurements with the model calculations. These measurements yield an energy gap of 1.42 eV (1.77 eV) at 300 K along (perpendicular) to the Cu-O chains. We have found that the lowest energy gap, the correlat…
▽ More
We have investigated the electronic structure of the zigzag ladder (chain) compound SrCuO2 combining polarized optical absorption, reflection, photoreflectance and pseudo-dielectric function measurements with the model calculations. These measurements yield an energy gap of 1.42 eV (1.77 eV) at 300 K along (perpendicular) to the Cu-O chains. We have found that the lowest energy gap, the correlation gap, is temperature independent. The electronic structure of this oxide is calculated using both the local-spin-density-approximation with gradient correction method, and the tight-binding theory for the correlated electrons. The calculated density of electronic states for non-correlated and correlated electrons shows quasi-one-dimensional character. The correlation gap values of 1.42 eV (indirect transition) and 1.88 eV (direct transition) have been calculated with the electron hopping parameters t = 0.30 eV (along a chain), t_yz = 0.12 eV (between chains) and the Anderson-Hubbard repulsion on copper sites U= 2.0 eV. We concluded that SrCuO_2 belongs to the correlated-gap insulators.
△ Less
Submitted 19 January, 2001;
originally announced January 2001.
