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Energy filtering-induced ultrahigh thermoelectric power factors in Ni$_3$Ge
Authors:
Fabian Garmroudi,
Simone Di Cataldo,
Michael Parzer,
Jennifer Coulter,
Yutaka Iwasaki,
Matthias Grasser,
Simon Stockinger,
Stephan Pázmán,
Sandra Witzmann,
Alexander Riss,
Herwig Michor,
Raimund Podloucky,
Sergii Khmelevskyi,
Antoine Georges,
Karsten Held,
Takao Mori,
Ernst Bauer,
Andrej Pustogow
Abstract:
Traditional thermoelectric materials rely on low thermal conductivity to enhance their efficiency but suffer from inherently limited power factors. Novel pathways to optimize electronic transport are thus crucial. Here, we achieve ultrahigh power factors in Ni$_3$Ge through a new materials design principle. When overlapping flat and dispersive bands are engineered to the Fermi level, charge carrie…
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Traditional thermoelectric materials rely on low thermal conductivity to enhance their efficiency but suffer from inherently limited power factors. Novel pathways to optimize electronic transport are thus crucial. Here, we achieve ultrahigh power factors in Ni$_3$Ge through a new materials design principle. When overlapping flat and dispersive bands are engineered to the Fermi level, charge carriers can undergo intense interband scattering, yielding an energy filtering effect similar to what has long been predicted in certain nanostructured materials. Via a multi-step DFT-based screening method developed herein, we discover a new family of L1$_2$-ordered binary compounds with ultrahigh power factors up to 11 mW m$^{-1}$ K$^{-2}$ near room temperature, which are driven by an intrinsic phonon-mediated energy filtering mechanism. Our comprehensive experimental and theoretical study of these new intriguing materials paves the way for understanding and designing high-performance scattering-tuned metallic thermoelectrics.
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Submitted 8 January, 2025;
originally announced January 2025.
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Thermoelectric transport in Ru$_2$TiSi full-Heusler compounds
Authors:
Fabian Garmroudi,
Michael Parzer,
Takao Mori,
Andrej Pustogow,
Ernst Bauer
Abstract:
Heusler compounds with six valence electrons per atom have attracted interest as thermoelectric materials owing to their semimetallic and semiconducting properties. Here, we theoretically and experimentally investigate electronic transport in Ru$_2$TiSi-based full-Heuslers. We show that electronic transport in this system can be well captured by a two-parabolic band model. The larger band gap of R…
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Heusler compounds with six valence electrons per atom have attracted interest as thermoelectric materials owing to their semimetallic and semiconducting properties. Here, we theoretically and experimentally investigate electronic transport in Ru$_2$TiSi-based full-Heuslers. We show that electronic transport in this system can be well captured by a two-parabolic band model. The larger band gap of Ru$_2$TiSi promises a higher thermoelectric performance, compared to its isovalent family member Fe$_2$VAl, which has been studied as a thermoelectric material for over two decades. Additionally, we identify $p$-type Ru$_2$TiSi as far more efficient than previously studied $n$-type compounds and demonstrate that this can be traced back to much lighter and more mobile holes originating from dispersive valence bands. Our findings demonstrate that an exceptionally high dimensionless figure of merit $zT > 1$ can be realized in these $p$-type compounds around 700 K upon proper reduction of the lattice thermal conductivity, e.g., by substituting Zr or Hf for Ti.
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Submitted 8 December, 2024;
originally announced December 2024.
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Mapping delocalization of impurity bands across archetypal Mott-Anderson transition
Authors:
M. Parzer,
F. Garmroudi,
A. Riss,
T. Mori,
A. Pustogow,
E. Bauer
Abstract:
Tailoring charge transport in solids on demand is the overarching goal of condensed-matter research as it is crucial for electronic applications. Yet, often the proper tuning knob is missing and extrinsic factors such as impurities and disorder impede coherent conduction. Here we control the very buildup of an electronic band from impurity states within the pseudogap of ternary Fe$_{2-x}$V…
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Tailoring charge transport in solids on demand is the overarching goal of condensed-matter research as it is crucial for electronic applications. Yet, often the proper tuning knob is missing and extrinsic factors such as impurities and disorder impede coherent conduction. Here we control the very buildup of an electronic band from impurity states within the pseudogap of ternary Fe$_{2-x}$V$_{1+x}$Al Heusler compounds via reducing the Fe content. Our density functional theory calculations combined with specific heat and electrical resistivity experiments reveal that, initially, these states are Andersonlocalized at low V concentrations $0 < x < 0.1$. As x increases, we monitor the formation of mobility edges upon the archetypal Mott-Anderson transition and map the increasing bandwidth of conducting states by thermoelectric measurements. Ultimately, delocalization of charge carriers in fully disordered V$_3$Al results in a resistivity exactly at the Mott-Ioffe-Regel limit that is perfectly temperature-independent up to 700 K - more constant than constantan.
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Submitted 4 December, 2024;
originally announced December 2024.
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Decoupled charge and heat transport for high-performance Fe$_2$VAl composite thermoelectrics
Authors:
Fabian Garmroudi,
Illia Serhiienko,
Michael Parzer,
Sanyukta Ghosh,
Pawel Ziolkowski,
Gregor Oppitz,
Hieu Duy Nguyen,
Cédric Bourgès,
Yuya Hattori,
Alexander Riss,
Sebastian Steyrer,
Gerda Rogl,
Peter Rogl,
Erhard Schafler,
Naoyuki Kawamoto,
Eckhard Müller,
Ernst Bauer,
Johannes de Boor,
Takao Mori
Abstract:
Decoupling charge and heat transport is essential for optimizing thermoelectric materials. Strategies to inhibit lattice-driven heat transport, however, also compromise carrier mobility, limiting the performance of most thermoelectrics, including Fe$_2$VAl Heusler compounds. Here, we demonstrate an innovative approach, which bypasses this tradeoff: via liquid-phase sintering, we incorporate the ar…
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Decoupling charge and heat transport is essential for optimizing thermoelectric materials. Strategies to inhibit lattice-driven heat transport, however, also compromise carrier mobility, limiting the performance of most thermoelectrics, including Fe$_2$VAl Heusler compounds. Here, we demonstrate an innovative approach, which bypasses this tradeoff: via liquid-phase sintering, we incorporate the archetypal topological insulator Bi$_{1-x}$Sb$_{x}$ between Fe$_2$V$_{0.95}$Ta$_{0.1}$Al$_{0.95}$ grains. Structural investigations alongside extensive thermoelectric and magneto-transport measurements reveal distinct modifications in the microstructure, and a reduced lattice thermal conductivity and enhanced carrier mobility are simultaneously found. This yields a huge performance boost $-$ far beyond the effective-medium limit $-$ and results in one of the highest figure of merits among both half- and full-Heusler compounds, $z\approx 1.6\times 10^{-3}\,$K$^{-1}$ ($zT\approx 0.5$) at 295 K. Our findings highlight the potential of secondary phases to decouple charge and heat transport and call for more advanced theoretical studies of multiphase composites.
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Submitted 10 October, 2024;
originally announced October 2024.
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SeeBand: A highly efficient, interactive tool for analyzing electronic transport data
Authors:
Michael Parzer,
Alexander Riss,
Fabian Garmroudi,
Johannes de Boor,
Takao Mori,
Ernst Bauer
Abstract:
Linking the fundamental physics of band structure and scattering theory with macroscopic features such as measurable bulk thermoelectric transport properties is indispensable to a thorough understanding of transport phenomena and ensures more targeted and efficient experimental research. Here, we introduce SeeBand, a highly efficient and interactive fitting tool based on Boltzmann transport theory…
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Linking the fundamental physics of band structure and scattering theory with macroscopic features such as measurable bulk thermoelectric transport properties is indispensable to a thorough understanding of transport phenomena and ensures more targeted and efficient experimental research. Here, we introduce SeeBand, a highly efficient and interactive fitting tool based on Boltzmann transport theory. A fully integrated user interface and visualization tool enable real-time comparison and connection between the electronic band structure (EBS) and microscopic transport properties. It allows simultaneous analysis of data for the Seebeck coefficient $S$, resistivity $ρ$ and Hall coefficient $R_\text{H}$ to identify suitable EBS models and extract the underlying microscopic material parameters and additional information from the model. Crucially, the EBS can be obtained by directly fitting the temperature-dependent properties of a single sample, which goes beyond previous approaches that look into doping dependencies. Finally, the combination of neural-network-assisted initial guesses and an efficient subsequent fitting routine allows for a rapid processing of big datasets, facilitating high-throughput analyses to identify underlying, yet undiscovered dependencies, thereby guiding material design.
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Submitted 14 January, 2025; v1 submitted 10 September, 2024;
originally announced September 2024.
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Cooperative Nernst Effect of Multilayer Systems: Parallel Circuit Model Study
Authors:
Hiroyasu Matsuura,
Alexander Riss,
Fabian Garmroudi,
Michael Parzer,
Ernst Bauer
Abstract:
Transverse thermoelectric power generation has emerged as a topic of immense interest in recent years owing to the orthogonal geometry which enables better scalability and fabrication of devices. Here, we investigate the thickness dependence of longitudinal and transverse responses in film-substrate systems i.e., the Seebeck coefficient, Hall coefficient, Nernst coefficient and anomalous Nernst co…
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Transverse thermoelectric power generation has emerged as a topic of immense interest in recent years owing to the orthogonal geometry which enables better scalability and fabrication of devices. Here, we investigate the thickness dependence of longitudinal and transverse responses in film-substrate systems i.e., the Seebeck coefficient, Hall coefficient, Nernst coefficient and anomalous Nernst coefficient in a unified and general manner based on the circuit model, which describes the system as the parallel setup. By solving the parallel circuit model, we show that the transverse responses exhibit a significant peak, indicating the importance of a cooperative effect between the film and the substrate, arising from circulating currents that occur in these multilayer systems in the presence of a temperature gradient. Finally, on the basis of realistic material parameters, we predict that the Nernst effect in bismuth thin films on doped silicon substrates is boosted to unprecedented values if the thickness ratio is tuned accordingly, motivating experimental validation.
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Submitted 30 July, 2024;
originally announced July 2024.
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Vacancy-induced pseudo-gap formation in antiferromagnetic Cr$_{0.86}$ZnSb
Authors:
Michael Parzer,
Fabian Garmroudi,
Herwig Michor,
Xinlin Yan,
Ernst Bauer,
Gerda Rogl,
Jiri Bursik,
Stephen Cottrell,
Raimund Podloucky,
Peter Rogl
Abstract:
Structural defects are important for both solid-state chemistry and physics, as they can have a significant impact on chemical stability and physical properties. Here, we identify a vacancyinduced pseudo-gap formation in antiferromagnetic Cr$_{0.86}$ZnSb. Cr$_{1-x}$ZnSb alloys were studied combining efforts of density functional theory (DFT) calculations and experimental methods to elucidate the e…
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Structural defects are important for both solid-state chemistry and physics, as they can have a significant impact on chemical stability and physical properties. Here, we identify a vacancyinduced pseudo-gap formation in antiferromagnetic Cr$_{0.86}$ZnSb. Cr$_{1-x}$ZnSb alloys were studied combining efforts of density functional theory (DFT) calculations and experimental methods to elucidate the effect of vacancies. Detailed analyses (X-ray powder and single crystal diffraction, transmission and secondary scanning electron microscopy) of Cr$_{1-x}$ZnSb, $0<x<0.20$, prompts Cr$_{0.86}$ZnSb as the only stable compound, crystallizing with the MnAlGe-type structure. From DFT calculations, an antiferromagnetic spin configuration of Cr local magnetic moments was found to be favorable for both, the perfectly stoichiometric compound CrZnSb, as well as for Cr$_{0.875}$ZnSb. Magnetic order is observed experimentally for Cr$_{0.86}$ZnSb by temperature- and field-dependent magnetization measurements, revealing a magnetic phase transition near 220 K, which is corroborated by zero-field muon spin relaxation studies. Thermoelectric transport properties exhibit distinct maxima in the temperature-dependent Seebeck coefficient and electrical resistivity at around 190 K. Analyzing the measured data on the basis of a triple parabolic band model and DFT simulations, their characteristic features are traced back to a pseudo-gap in the electronic structure arising from a particular vacancy arrangement. These findings offer valuable insights into the role of vacancies in defected materials, contributing to the broader understanding of structural defects and their impact on the electronic structure.
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Submitted 12 November, 2024; v1 submitted 12 June, 2024;
originally announced June 2024.
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Iterative composition optimization in Fe$_2$VAl-based thin-film thermoelectrics using single-target sputtering
Authors:
Alexander Riss,
Ellena Lasisch,
Simon Podbelsek,
Katharina Schäfer,
Michael Parzer,
Fabian Garmroudi,
Christoph Eisenmenger-Sittner,
Takao Mori,
Ernst Bauer
Abstract:
Magnetron sputtering inherently exhibits the advantage of dislodging particles from the target in a ratio equivalent to the target stoichiometry. Nevertheless, film compositions often deviate due to element-dependent scattering with the working gas, necessitating the adjustment of the sputtering process. In this work, we explore an unconventional approach of addressing this issue, involving the em…
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Magnetron sputtering inherently exhibits the advantage of dislodging particles from the target in a ratio equivalent to the target stoichiometry. Nevertheless, film compositions often deviate due to element-dependent scattering with the working gas, necessitating the adjustment of the sputtering process. In this work, we explore an unconventional approach of addressing this issue, involving the employment of an off-stoichiometric target. The required composition is obtained through an iterative process, which is demonstrated by Fe$_2$VAl and Fe$_2$V$_{0.9}$Ti$_{0.1}$Al films as case studies. Ultimately, the correct stoichiometry is obtained from Fe$_{1.86}$V$_{1.15}$Al$_{0.99}$ and Fe$_{1.88}$V$_{1.02}$Ti$_{0.13}$Al$_{0.97}$ targets, respectively. Despite the thermoelectric properties falling below expectations, mainly due to imperfect film crystallization, the strategy successfully achieved the desired stoichiometry, enabling accurate film synthesis without the need of advanced sputtering setups.
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Submitted 7 June, 2024;
originally announced June 2024.
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High thermoelectric power factor through topological flat bands
Authors:
Fabian Garmroudi,
Illia Serhiienko,
Simone Di Cataldo,
Michael Parzer,
Alexander Riss,
Matthias Grasser,
Simon Stockinger,
Sergii Khmelevskyi,
Kacper Pryga,
Bartlomiej Wiendlocha,
Karsten Held,
Takao Mori,
Ernst Bauer,
Andrej Pustogow
Abstract:
Thermoelectric (TE) materials are useful for applications such as waste heat harvesting or efficient and targeted cooling. While various strategies towards superior thermoelectrics through a reduction of the lattice thermal conductivity have been developed, a path to enhance the power factor is pressing. Here, we report large power factors up to 5 mW m$^{-1}$ K$^{-2}$ at room temperature in the ka…
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Thermoelectric (TE) materials are useful for applications such as waste heat harvesting or efficient and targeted cooling. While various strategies towards superior thermoelectrics through a reduction of the lattice thermal conductivity have been developed, a path to enhance the power factor is pressing. Here, we report large power factors up to 5 mW m$^{-1}$ K$^{-2}$ at room temperature in the kagome metal Ni$_3$In$_{1-x}$Sn$_x$. This system is predicted to feature almost dispersionless flat bands in conjunction with highly dispersive Dirac-like bands in its electronic structure around the Fermi energy $E_\text{F}$ [L. Ye et al., Nature Physics 1-5 (2024)]. Within this study, we experimentally and theoretically showcase that tuning this flat band precisely below $E_\text{F}$ by chemical doping $x$ boosts the Seebeck coefficient and power factor, as highly mobile charge carriers scatter into the flat-band states. Our work demonstrates the prospect of engineering extremely flat and highly dispersive bands towards the Fermi energy in kagome metals and introduces topological flat bands as a novel tuning knob for thermoelectrics.
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Submitted 11 April, 2024;
originally announced April 2024.
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High thermoelectric performance in metallic NiAu alloys
Authors:
Fabian Garmroudi,
Michael Parzer,
Alexander Riss,
Cédric Bourgès,
Sergii Khmelevskyi,
Takao Mori,
Ernst Bauer,
Andrej Pustogow
Abstract:
Thermoelectric (TE) materials seamlessly convert thermal into electrical energy and vice versa, making them promising for applications such as power generation or cooling. Although historically the TE effect was first discovered in metals, state-of-the-art research mainly focuses on doped semiconductors with large figure of merit, $zT$, that determines the conversion efficiency of TE devices. Whil…
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Thermoelectric (TE) materials seamlessly convert thermal into electrical energy and vice versa, making them promising for applications such as power generation or cooling. Although historically the TE effect was first discovered in metals, state-of-the-art research mainly focuses on doped semiconductors with large figure of merit, $zT$, that determines the conversion efficiency of TE devices. While metallic alloys have superior functional properties, such as high ductility and mechanical strength, they have mostly been discarded from investigation in the past due to their small Seebeck effect. Here, we realize unprecedented TE performance in metals by tuning the energy-dependent electronic scattering. Based on our theoretical predictions, we identify binary NiAu alloys as promising candidate materials and experimentally discover colossal power factors up to 34 mWm$^{-1}$K$^{-2}$ (on average 30 mWm$^{-1}$K$^{-2}$ from 300 to 1100 K), which is more than twice larger than in any known bulk material above room temperature. This system reaches a $zT$ up to 0.5, setting a new world record value for metals. NiAu alloys are not only orders of magnitude more conductive than heavily doped semiconductors, but also have large Seebeck coefficients originating from an inherently different physical mechanism: within the Au s band conduction electrons are highly mobile while holes are scattered into more localized Ni d states, yielding a strongly energy-dependent carrier mobility. Our work challenges the common belief that good metals are bad thermoelectrics and presents an auspicious paradigm for achieving high TE performance in metallic alloys through engineering electron-hole selective s-d scattering.
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Submitted 6 March, 2023;
originally announced March 2023.
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From spin liquid to magnetic ordering in the anisotropic kagome Y-Kapellasite Y3Cu9(OH)19Cl8: a single crystal study
Authors:
D. Chatterjee,
P. Puphal,
Q. Barthélemy,
J. Willwater,
S. Süllow,
C. Baines,
S. Petit,
E. Ressouche,
J. Ollivier,
K. M. Zoch,
C. Krellner,
M. Parzer,
A. Riss,
F. Garmroudi,
A. Pustogow,
P. Mendels,
E. Kermarrec,
F. Bert
Abstract:
Y3Cu9(OH)19Cl8 realizes an original anisotropic kagome model hosting a rich magnetic phase diagram [M. Hering et al, npj Computational Materials 8, 1 (2022)]. We present an improved synthesis of large phase-pure single crystals via an external gradient method. These crystals were investigated in details by susceptibility, specific heat, thermal expansion, neutron scattering and local muSR and NMR…
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Y3Cu9(OH)19Cl8 realizes an original anisotropic kagome model hosting a rich magnetic phase diagram [M. Hering et al, npj Computational Materials 8, 1 (2022)]. We present an improved synthesis of large phase-pure single crystals via an external gradient method. These crystals were investigated in details by susceptibility, specific heat, thermal expansion, neutron scattering and local muSR and NMR techniques. At variance with polycristalline samples, the study of single crystals gives evidence for subtle structural instabilities at 33K and 13K which preserve the global symmetry of the system and thus the magnetic model. At 2.1K the compound shows a magnetic transition to a coplanar (1/3,1/3) long range order as predicted theoretically. However our analysis of the spin wave excitations yields magnetic interactions which locate the compound closer to the phase boundary to a classical jammed spin liquid phase. Enhanced quantum fluctuations at this boundary may be responsible for the strongly reduced ordered moment of the Cu2+, estimated to be 0.075muB from muSR.
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Submitted 29 November, 2022;
originally announced November 2022.