Showing 1–50 of 50 results for author: Gariglio, S

Probing the quantum metric of 3D topological insulators

Authors: Giacomo Sala, Emanuele Longo, Maria Teresa Mercaldo, Stefano Gariglio, Mario Cuoco, Roberto Mantovan, Carmine Ortix, Andrea D. Caviglia

Abstract: The surface states of 3D topological insulators possess geometric structures that imprint distinctive signatures on electronic transport. A prime example is the Berry curvature, which controls electric frequency doubling via a higher order moment, called Berry curvature triple. In addition to the Berry curvature, topological surface states are expected to exhibit a nontrivial quantum metric, which… ▽ More The surface states of 3D topological insulators possess geometric structures that imprint distinctive signatures on electronic transport. A prime example is the Berry curvature, which controls electric frequency doubling via a higher order moment, called Berry curvature triple. In addition to the Berry curvature, topological surface states are expected to exhibit a nontrivial quantum metric, which plays a key role in governing nonlinear magnetotransport. However, its manifestation has yet to be experimentally observed in 3D topological insulators. Here, we provide evidence for a nonlinear response activated by the quantum metric of the topological surface states of Sb$_2$Te$_3$. We measure a time-reversal odd, nonlinear magnetoresistance that is independent of temperature and disorder below 30 K and is thus of intrinsic geometrical origin. Our measurements demonstrate the existence of quantum geometry-induced transport in topological phases of matter and provide strategies for designing novel functionalities in topological devices. △ Less

Submitted 21 September, 2025; originally announced September 2025.

Electric field control of superconducting fluctuations and quasiparticle interference at oxide interfaces

Authors: Graham Kimbell, Ulderico Filippozzi, Stefano Gariglio, Marc Gabay, Andreas Glatz, Andrey Varlamov, Andrea Caviglia

Abstract: We investigate tunable superconducting transitions in (111)$\mathrm{LaAlO}_3/\mathrm{KTaO}_3$ field-effect devices. Large increases in conductivity, associated with superconducting fluctuations, are observed far above the transition temperature. However, the standard Aslamazov-Larkin paraconductivity model significantly underestimates the effect observed here. We use a model that includes conducti… ▽ More We investigate tunable superconducting transitions in (111)$\mathrm{LaAlO}_3/\mathrm{KTaO}_3$ field-effect devices. Large increases in conductivity, associated with superconducting fluctuations, are observed far above the transition temperature. However, the standard Aslamazov-Larkin paraconductivity model significantly underestimates the effect observed here. We use a model that includes conductivity corrections from normal state quasiparticle interference together with all contributions from superconducting fluctuations evaluated at arbitrary temperatures and in the short-wavelength limit. Through analysis of the magnetoconductance and resistive transitions, we find that the large conductivity increase can be explained by a combination of weak anti-localization and Maki-Thompson superconducting fluctuations. Both contributions are enabled by a strong temperature dependence of the electron's decoherence time compatible with an electron-phonon scattering scenario. We find that conductivity corrections are modulated by the electrostatic field effect, that governs a competition between normal-state quasiparticle interference and superconducting fluctuations. △ Less

Submitted 20 June, 2025; originally announced June 2025.

Curvature-Controlled Polarization in Adaptive Ferroelectric Membranes

Authors: Greta Segantini, Ludovica Tovaglieri, Chang Jae Roh, Chih-Ying Hsu, Seongwoo Cho, Ralph Bulanadi, Petr Ondrejkovic, Pavel Marton, Jirka Hlinka, Stefano Gariglio, Duncan T. L. Alexander, Patrycja Paruch, Jean-Marc Triscone, Céline Lichtensteiger, Andrea D. Caviglia

Abstract: In this study, we explore the ferroelectric domain structure and mechanical properties of PbTiO$_3$-based membranes, which develops a well-ordered and crystallographic-oriented ripple pattern upon release from their growth substrate. The ferrolectric domain structure of the PbTiO$_3$ layer was examined at various length scales using optical second harmonic generation, piezoresponse force microscop… ▽ More In this study, we explore the ferroelectric domain structure and mechanical properties of PbTiO$_3$-based membranes, which develops a well-ordered and crystallographic-oriented ripple pattern upon release from their growth substrate. The ferrolectric domain structure of the PbTiO$_3$ layer was examined at various length scales using optical second harmonic generation, piezoresponse force microscopy, and scanning transmission electron microscopy. These methods reveal the presence of purely in-plane domains organized into superdomains at the crest of the ripples, while an in-plane/out-of-plane domain structure was observed in the flat regions separating the ripples, in agreement with phase-field simulations. The mechanical properties of the membrane were assessed using contact resonance force microscopy, which identified distinct mechanical behaviors at the ripples compared to the flat regions. This study shows that the physical properties of the ferroelectric layer in membranes can be locally controlled within an ordered array of ripples, with well-defined geometric characteristics. △ Less

Submitted 7 March, 2025; originally announced March 2025.

Comments: 15 pages, 6 figures

A structural instability drives the VO2 metal-insulator transition

Authors: Javier del Valle, Carl Willem Rischau, Artem Korshunov, David Ambrosi, Aitana Tarazaga Martin-Luengo, Ibraheem Yousef, Sara A. Lopez-Paz, Shany Neyshtadt-Ronel, Stefano Gariglio, Alexei Bosak, Sonia Francoual, Yoav Kalcheim

Abstract: VO2 features concomitant structural and metal-insulator transitions. This poses a challenge for understanding the underlying mechanism: is the transition triggered by a structural or by an electronic instability? Here, we address this question by studying pre-transitional fluctuations in the metallic state. By measuring resonant diffuse X-ray scattering we find no evidence that spatial fluctuation… ▽ More VO2 features concomitant structural and metal-insulator transitions. This poses a challenge for understanding the underlying mechanism: is the transition triggered by a structural or by an electronic instability? Here, we address this question by studying pre-transitional fluctuations in the metallic state. By measuring resonant diffuse X-ray scattering we find no evidence that spatial fluctuations of d-electrons are any different from those of vanadium ion cores. That is, charge and lattice remain coupled as they fluctuate jointly towards the insulating phase, strongly supporting the case that the VO2 metal-insulator transition is triggered by a structural instability. Our work offers a novel approach to solve similar problems in other strongly correlated systems. △ Less

Submitted 24 January, 2025; originally announced January 2025.

High-field superconductivity from atomic-scale confinement and spin-orbit coupling at (111)$\mathrm{LaAlO_3/KTaO_3}$ interfaces

Authors: Ulderico Filippozzi, Graham Kimbell, Davide Pizzirani, Siobhan McKeown Walker, Chiara Cocchi, Stefano Gariglio, Marc Gabay, Steffen Wiedmann, Andrea D. Caviglia

Abstract: We study the superconducting critical fields of two-dimensional electron systems at (111)$\mathrm{LaAlO_3/KTaO_3}$ interfaces as a function of electrostatic back-gating. Our work reveals inplane critical fields of unprecedented magnitudes at oxide interfaces. By comparing the critical fields in-plane and out-of-plane we discover an extremely anisotropic superconductor with an effective thickness b… ▽ More We study the superconducting critical fields of two-dimensional electron systems at (111)$\mathrm{LaAlO_3/KTaO_3}$ interfaces as a function of electrostatic back-gating. Our work reveals inplane critical fields of unprecedented magnitudes at oxide interfaces. By comparing the critical fields in-plane and out-of-plane we discover an extremely anisotropic superconductor with an effective thickness below 1 nm and a 12-fold violation of the Chandrasekhar-Clogston paramagnetic limit. The analysis of magneto-transport indicates that the enhancement of the critical fields is due to an exceptionally thin superconducting layer and to a paramagnetic susceptibility suppressed by spin-orbit scattering. △ Less

Submitted 8 November, 2024; originally announced November 2024.

The quantum metric of electrons with spin-momentum locking

Authors: Giacomo Sala, Maria Teresa Mercaldo, Klevis Domi, Stefano Gariglio, Mario Cuoco, Carmine Ortix, Andrea D. Caviglia

Abstract: Quantum materials are characterized by electromagnetic responses intrinsically linked to the geometry and topology of electronic wavefunctions, encoded in the quantum metric and Berry curvature. Whereas Berry curvature-mediated transport effects have been identified in several magnetic and nonmagnetic systems, quantum metric-induced transport phenomena remain limited to topological antiferromagnet… ▽ More Quantum materials are characterized by electromagnetic responses intrinsically linked to the geometry and topology of electronic wavefunctions, encoded in the quantum metric and Berry curvature. Whereas Berry curvature-mediated transport effects have been identified in several magnetic and nonmagnetic systems, quantum metric-induced transport phenomena remain limited to topological antiferromagnets. Here we show that spin-momentum locking -- a general characteristic of the electronic states at surfaces and interfaces of spin-orbit coupled materials -- leads to a finite quantum metric. This metric activates a nonlinear in-plane magnetoresistance that we measure and electrically control in 111-oriented LaAlO$_3$/SrTiO$_3$ interfaces. These findings demonstrate the existence of quantum metric effects in a vast class of materials and enable previously unexplored strategies to design functionalities based on quantum geometry. △ Less

Submitted 25 August, 2025; v1 submitted 9 July, 2024; originally announced July 2024.

Comments: Published

Journal ref: Science 389, 822-825, 2025

Electron-Beam Writing of Atomic-Scale Reconstructions at Oxide Interfaces

Authors: Greta Segantini, Chih-Ying Hsu, Carl Willem Rischau, Patrick Blah, Mattias Matthiesen, Stefano Gariglio, Jean-Marc Triscone, Duncan T. L. Alexander, Andrea D. Caviglia

Abstract: The epitaxial growth of complex oxides enables the production of high-quality films, yet substrate choice is restricted to certain symmetry and lattice parameters, thereby limiting the technological applications of epitaxial oxides. In comparison, the development of free-standing oxide membranes gives opportunities to create novel heterostructures by non-epitaxial stacking of membranes, opening ne… ▽ More The epitaxial growth of complex oxides enables the production of high-quality films, yet substrate choice is restricted to certain symmetry and lattice parameters, thereby limiting the technological applications of epitaxial oxides. In comparison, the development of free-standing oxide membranes gives opportunities to create novel heterostructures by non-epitaxial stacking of membranes, opening new possibilities for materials design. Here, we introduce a method for writing, with atomic precision, ionically bonded crystalline material across the gap between an oxide membrane and a carrier substrate. The process involves a thermal pre-treatment, followed by localized exposure to the raster scan of a scanning transmission electron microscopy (STEM) beam. STEM imaging and electron energy-loss spectroscopy show that we achieve atomically sharp interface reconstructions between a 30 nm-thick SrTiO${_3}$ membrane and a niobium-doped SrTiO${_3}$(001)-oriented carrier substrate. These findings indicate new strategies for fabricating synthetic heterostructures with novel structural and electronic properties. △ Less

Submitted 18 June, 2024; originally announced June 2024.

Engineering Symmetry Breaking Interfaces by Nanoscale Structural-Energetics in Orthorhombic Perovskite Thin Films

Authors: Duncan T. L. Alexander, Hugo Meley, Michael Marcus Schmitt, Bernat Mundet, Philippe Ghosez, Jean-Marc Triscone, Stefano Gariglio

Abstract: The atomic configuration of phases and their interfaces is fundamental to materials design and engineering. Here, we unveil a transition metal oxide interface, whose formation is driven by energetic influences - epitaxial tensile strain versus oxygen octahedra connectivity - that compete in determining the orientation of an orthorhombic perovskite film. We study this phenomenon in a system of LaVO… ▽ More The atomic configuration of phases and their interfaces is fundamental to materials design and engineering. Here, we unveil a transition metal oxide interface, whose formation is driven by energetic influences - epitaxial tensile strain versus oxygen octahedra connectivity - that compete in determining the orientation of an orthorhombic perovskite film. We study this phenomenon in a system of LaVO$_3$ grown on (101) DyScO$_3$, using atomic-resolution scanning transmission electron microscopy to measure intrinsic markers of orthorhombic symmetry. We identify that the film resolves this energetic conflict by switching its orientation by 90 degrees at an atomically-flat plane within its volume, not at the film/substrate interface. At either side of this "switching plane", characteristic orthorhombic distortions tend to zero to couple mismatched oxygen octahedra rotations. The resulting boundary is highly energetic, which makes it a priori unlikely; by using second-principles atomistic modeling, we show how its formation requires structural relaxation of an entire film grown beyond a critical thickness measuring tens of unit cells. The switching plane breaks the inversion symmetry of the Pnma orthorhombic structure, and sharply joins two regions, a thin intermediate layer and the film bulk, that are held under different mechanical strain states. By therefore contacting two distinct phases of one compound that would never otherwise coexist, this alternative type of interface opens new avenues for nanoscale engineering of functional systems, such as a chemically-uniform but magnetically inhomogeneous heterostructure. △ Less

Submitted 25 November, 2024; v1 submitted 16 January, 2024; originally announced January 2024.

Thermal and electrostatic tuning of surface phonon-polaritons in LaAlO3/SrTiO3 heterostructures

Authors: Yixi Zhou, Adrien Waelchli, Margherita Boselli, Iris Crassee, Adrien Bercher, Weiwei Luo, Jiahua Duan, J. L. M. van Mechelen, Dirk van der Marel, Jérémie Teyssier, Carl Willem Rischau, Lukas Korosec, Stefano Gariglio, Jean-Marc Triscone, Alexey B. Kuzmenko

Abstract: Phonon polaritons are promising for infrared applications due to a strong light-matter coupling and subwavelength energy confinement they offer. Yet, the spectral narrowness of the phonon bands and difficulty to tune the phonon polariton properties hinder further progress in this field. SrTiO3 - a prototype perovskite oxide - has recently attracted attention due to two prominent far-infrared phono… ▽ More Phonon polaritons are promising for infrared applications due to a strong light-matter coupling and subwavelength energy confinement they offer. Yet, the spectral narrowness of the phonon bands and difficulty to tune the phonon polariton properties hinder further progress in this field. SrTiO3 - a prototype perovskite oxide - has recently attracted attention due to two prominent far-infrared phonon polaritons bands, albeit without any tuning reported so far. Here we show, using cryogenic infrared near-field microscopy, that long-propagating surface phonon polaritons are present both in bare SrTiO3 and in LaAlO3/SrTiO3 heterostructures hosting a two-dimensional electron gas. The presence of the two-dimensional electron gas increases dramatically the thermal variation of the upper limit of the surface phonon polariton band due to temperature dependent polaronic screening of the surface charge carriers. Furthermore, we demonstrate a tunability of the upper surface phonon polariton frequency in LaAlO3/SrTiO3 via electrostatic gating. Our results suggest that oxide interfaces are a new platform bridging unconventional electronics and long-wavelength nanophotonics. △ Less

Submitted 13 November, 2023; originally announced December 2023.

Comments: Nature Communications, in press

Journal ref: Nature Communications 14, 7686 (2023)

Anomalous T-dependence of phonon lifetimes in metallic VO2

Authors: Carl Willem Rischau, Artem Korshunov, Volodymyr Multian, Sara A. Lopez-Paz, Chubin Huang, Lucia Varbaro, Jérémie Teyssier, Yoav Kalcheim, Stefano Gariglio, Alexei Bossak, Jean-Marc Triscone, Javier del Valle

Abstract: We investigate phonon lifetimes in VO2 single crystals. We do so in the metallic state above the metal-insulator transition (MIT), where strong structural fluctuations are known to take place. By combining inelastic X-ray scattering and Raman spectroscopy, we track the temperature dependence of several acoustic and optical phonon modes up to 1000 K. Contrary to what is commonly observed, we find t… ▽ More We investigate phonon lifetimes in VO2 single crystals. We do so in the metallic state above the metal-insulator transition (MIT), where strong structural fluctuations are known to take place. By combining inelastic X-ray scattering and Raman spectroscopy, we track the temperature dependence of several acoustic and optical phonon modes up to 1000 K. Contrary to what is commonly observed, we find that phonon lifetimes decrease with decreasing temperature. Our results show that pre-transitional fluctuations in the metallic state give rise to strong electron-phonon scattering that onsets hundreds of degrees above the transition and increases as the MIT is approached. Notably, this effect is not limited to specific points of reciprocal space that could be associated with the structural transition. △ Less

Submitted 31 October, 2023; originally announced October 2023.

Characteristic lengthscales of the electrically-induced insulator-to-metal transition

Authors: Theodor Luibrand, Adrien Bercher, Rodolfo Rocco, Farnaz Tahouni-Bonab, Lucia Varbaro, Carl Willem Rischau, Claribel Domínguez, Yixi Zhou, Weiwei Luo, Soumen Bag, Lorenzo Fratino, Reinhold Kleiner, Stefano Gariglio, Dieter Koelle, Jean-Marc Triscone, Marcelo J. Rozenberg, Alexey B. Kuzmenko, Stefan Guénon, Javier del Valle

Abstract: Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a conducting filament. While this phenomenon has attracted much attention due to potential applications, many fundamental questions remain unaddressed. One of them is its… ▽ More Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a conducting filament. While this phenomenon has attracted much attention due to potential applications, many fundamental questions remain unaddressed. One of them is its characteristic lengths: what sets the size of these filaments, and how does this impact resistive switching properties. Here we use a combination of wide-field and scattering-type scanning near-field optical microscopies to characterize filament formation in NdNiO3 and SmNiO3 thin films. We find a clear trend: smaller filaments increase the current density, yielding sharper switching and a larger resistive drop. With the aid of numerical simulations, we discuss the parameters controlling the filament width and, hence, the switching properties. △ Less

Submitted 1 January, 2023; originally announced January 2023.

A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces

Authors: Siobhan McKeown Walker, Margherita Boselli, Emanuel A. Martínez, Stefano Gariglio, Flavio Y. Bruno, Felix Baumberger

Abstract: We have measured the electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO3 (Al/STO) and LaAlO3/SrTiO3 (LAO/STO) interfaces by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to probe these buried interfaces. We demonstrate the possibility of tuning the electronic density in A… ▽ More We have measured the electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO3 (Al/STO) and LaAlO3/SrTiO3 (LAO/STO) interfaces by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to probe these buried interfaces. We demonstrate the possibility of tuning the electronic density in Al/STO by varying the Al layer thickness and show that the electronic structure evolution is well described by self-consistent tight binding supercell calculations, but differs qualitatively from a rigid band shift model. We show that both 2DES are strongly coupled to longitudinal optical phonons, in agreement with previous reports of a polaronic ground state in similar STO based 2DESs. Tuning the electronic density in Al/STO to match that of LAO/STO and comparing both systems, we estimate that the intrinsic LAO/STO 2DES has a bare band width of ~ 60 meV and a carrier density of ~ 6 10^13 cm-2. △ Less

Submitted 11 February, 2022; originally announced February 2022.

Comments: This is the submitted version of the manuscript. Accepted for publication in Advanced Electronic Materials

Journal ref: Adv. Electron. Mater., 2101376 (2022)

Layered Metals as Polarized Transparent Conductors

Authors: Carsten Putzke, Chunyu Guo, Vincent Plisson, Martin Kroner, Thibault Chervy, Matteo Simoni, Pim Wevers, Maja D. Bachmann, John R. Cooper, Antony Carrington, Naoki Kikugawa, Jennifer Fowlie, Stefano Gariglio, Andrew P. Mackenzie, Kenneth S. Burch, Ataç Îmamoğlu, Philip J. W. Moll

Abstract: The quest to improve transparent conductors balances two key goals: increasing electrical conductivity and increasing optical transparency. To improve both simultaneously is hindered by the physical limitation that good metals with high electrical conductivity have large carrier densities that push the plasma edge into the ultra-violet range. Transparent conductors are compromises between electric… ▽ More The quest to improve transparent conductors balances two key goals: increasing electrical conductivity and increasing optical transparency. To improve both simultaneously is hindered by the physical limitation that good metals with high electrical conductivity have large carrier densities that push the plasma edge into the ultra-violet range. Transparent conductors are compromises between electrical conductivity, requiring mobile electrons, and optical transparency based on immobile charges to avoid screening of visible light. Technological solutions reflect this trade-off, achieving the desired transparencies by reducing the conductor thickness or carrier density at the expense of a lower conductance. Here we demonstrate that highly anisotropic crystalline conductors offer an alternative solution, avoiding this compromise by separating the directions of conduction and transmission. Materials with a quasi-two-dimensional electronic structure have a plasma edge well below the range of visible light while maintaining excellent in-plane conductivity. We demonstrate that slabs of the layered oxides Sr$_2$RuO$_4$ and Tl$_2$Ba$_2$CuO$_{6+δ}$ are optically transparent even at macroscopic thicknesses >2$μ$m for c-axis polarized light. Underlying this observation is the fabrication of out-of-plane slabs by focused ion beam milling. This work provides a glimpse into future technologies, such as highly polarized and addressable optical screens, that advancements in a-axis thin film growth will enable. △ Less

Submitted 19 July, 2021; originally announced July 2021.

Electronic transport in sub-micrometric channels at the LaAlO$_{3}$/SrTiO$_{3}$ interface

Authors: Margherita Boselli, Gernot Scheerer, Michele Filippone, Weiwei Luo, Adrien Waelchli, Alexey B. Kuzmenko, Stefano Gariglio, Thierry Giamarchi, Jean-Marc Triscone

Abstract: Nanoscale channels realized at the conducting interface between LaAlO$_{3}$ and SrTiO$_{3}$ provide a perfect playground to explore the effect of dimensionality on the electronic properties of complex oxides. Here we compare the electric transport properties of devices realized using the AFM-writing technique and conventional photo-lithography. We find that the lateral size of the conducting paths… ▽ More Nanoscale channels realized at the conducting interface between LaAlO$_{3}$ and SrTiO$_{3}$ provide a perfect playground to explore the effect of dimensionality on the electronic properties of complex oxides. Here we compare the electric transport properties of devices realized using the AFM-writing technique and conventional photo-lithography. We find that the lateral size of the conducting paths has a strong effect on their transport behavior at low temperature. We observe a crossover from metallic to insulating regime occurring at about 50 K for channels narrower than 100 nm. The insulating upturn can be suppressed by the application of a positive backgate. We compare the behavior of nanometric constrictions in lithographically patterned channels with the result of model calculations and we conclude that the experimental observations are compatible with the physics of a quantum point contact. △ Less

Submitted 16 September, 2020; originally announced September 2020.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. B 103, 075431 (2021)

Coupling lattice instabilities across the interface in ultrathin oxide heterostructures

Authors: T. C. van Thiel, J. Fowlie, C. Autieri, N. Manca, M. Šiškins, D. Afanasiev, S. Gariglio, A. D. Caviglia

Abstract: Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here we determine the effect of the cubic-tetragonal distortion of $\text{SrTiO}_3$ on the electronic properties of thin films of… ▽ More Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here we determine the effect of the cubic-tetragonal distortion of $\text{SrTiO}_3$ on the electronic properties of thin films of $\text{SrIrO}_3$, a topological crystalline metal hosting a delicate interplay between spin-orbit coupling and electronic correlations. We demonstrate that below the transition temperature at 105 K, $\text{SrIrO}_3$ orthorhombic domains couple directly to tetragonal domains in $\text{SrTiO}_3$. This forces the in-phase rotational axis to lie in-plane and creates a binary domain structure in the $\text{SrIrO}_3$ film. The close proximity to the metal-insulator transition in ultrathin $\text{SrIrO}_3$ causes the individual domains to have strongly anisotropic transport properties, driven by a reduction of bandwidth along the in-phase axis. The strong structure-property relationships in perovskites make these compounds particularly suitable for static and dynamic coupling at interfaces, providing a promising route towards realizing novel functionalities in oxide heterostructures. △ Less

Submitted 24 February, 2020; originally announced February 2020.

Comments: 5 pages, 4 figures

Journal ref: ACS Materials Letters, 2, 398-394 (2020)

High sensitivity variable-temperature infrared nanoscopy of conducting oxide interfaces

Authors: Weiwei Luo, Margherita Boselli, Jean-Marie Poumirol, Ivan Ardizzone, Jeremie Teyssier, Dirk van der Marel, Stefano Gariglio, Jean-Marc Triscone, Alexey B. Kuzmenko

Abstract: Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO3/SrTiO3 interface from room temperature down to 6… ▽ More Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO3/SrTiO3 interface from room temperature down to 6 K. We show that the near-field optical signal, in particular its phase component, is highly sensitive to the transport properties of the electron system present at the interface. Our modelling reveals that such sensitivity originates from the interaction of the AFM tip with coupled plasmon-phonon modes with a small penetration depth. The model allows us to quantitatively correlate changes in the optical signal with the variation of the 2DES transport properties induced by cooling and by electrostatic gating. To probe the spatial resolution of the technique, we image conducting nano-channels written in insulating heterostructures with a voltage-biased tip of an atomic force microscope. △ Less

Submitted 13 May, 2019; originally announced May 2019.

Comments: 19 pages, 5 figures

Journal ref: Nature Communications 10, 2774 (2019)

Artificial quantum confinement in LAO3/STO heterostructure

Authors: Marco Caputo, Margherita Boselli, Alessio Filippetti, Sebastien Lamal, Danfeng Li, Alla Chickina, Claudia Cancellieri, Thorsten Schmitt, Jean-Marc Triscone, Philippe Ghosez, Stefano Gariglio, Vladimir N. Strocov

Abstract: Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation o… ▽ More Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation of the interfacial 2D electron system (2DES) discovered at the LAO3/STO3 (LAO/STO) interface. In samples prepared by growing a LAO layer onto a STO substrate, the 2DES is confined in a band bending potential well, whose width is set by the interface charge density and the STO dielectric properties, and determines the electronic band structure. Growing LAO (2 nm) /STO (x nm)/LAO (2 nm) heterostructures on STO substrates allows us to control the extension of the confining potential of the top 2DES via the thickness of the STO layer. In such samples, we explore the dependence of the electronic structure on the width of the confining potential using soft X-ray ARPES combined with ab-initio calculations. The results indicate that varying the thickness of the STO film modifies the quantization of the 3d t2g bands and, interestingly, redistributes the charge between the dxy and dxz/dyz bands. △ Less

Submitted 26 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. Materials 4, 035001 (2020)

Modulation of superconductivity by quantum confinement in doped strontium titanate

Authors: Davide Valentinis, Zhenping Wu, Stefano Gariglio, Dangfeng Li, Gernot Scheerer, Margherita Boselli, Jean-Marc Triscone, Dirk van der Marel, Christophe Berthod

Abstract: Quantum confinement in a thin-film geometry offers viable routes for tuning the critical properties of superconductors through modification of both density of states and pairing interaction. Low-density systems like doped strontium titanate are especially susceptible to these confinement-induced effects. In this paper, we show that the superconducting critical temperature $T_c$ is enhanced through… ▽ More Quantum confinement in a thin-film geometry offers viable routes for tuning the critical properties of superconductors through modification of both density of states and pairing interaction. Low-density systems like doped strontium titanate are especially susceptible to these confinement-induced effects. In this paper, we show that the superconducting critical temperature $T_c$ is enhanced through quantum confinement in SrTiO$_3$/SrTi$_{1-x}$Nb$_x$O$_3$/SrTiO$_3$ heterostructures at $x=1\%$ concentration, by measuring resistivity transitions and the Hall carrier density for different thicknesses of the doped layer. We observe a nonmonotonic raise of $T_c$ with decreasing layer thickness at constant carrier density as estimated from the Hall effect. We analyze the results by solving a two-band model with a pairing interaction reproducing the density-dependent $T_c$ of doped SrTiO$_3$ in the bulk, that we confine to a potential well established self-consistently by the charged Nb dopants. The evolution of the theoretical $T_c$ with thickness agrees well with experiments. We point out the possible role of density inhomogeneities and suggest novel methods for engineering superconductivity in epitaxial thin films. △ Less

Submitted 24 November, 2018; originally announced November 2018.

Comments: 7 pages, 4 figures

Probing Quantum Confinement and Electronic Structure at Polar Oxide Interfaces

Authors: Danfeng Li, Sébastien Lemal, Stefano Gariglio, Zhenping Wu, Alexandre Fête, Margherita Boselli, Philippe Ghosez, Jean-Marc Triscone

Abstract: Polar discontinuities occurring at interfaces between two different materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such structures, a reconfiguration of the charge landscape sets in at the interface via chemical modifications, adsorbates or charge transfer. In the latter case, one… ▽ More Polar discontinuities occurring at interfaces between two different materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such structures, a reconfiguration of the charge landscape sets in at the interface via chemical modifications, adsorbates or charge transfer. In the latter case, one may expect a local electronic doping of one material: one sparkling example is the two-dimensional electron liquid (2DEL) appearing in SrTiO$_3$ once covered by a polar LaAlO$_3$ layer. Here we show that tuning the formal polarisation of a (La,Al)$_{1-x}$(Sr,Ti)$_x$O$_3$ (LASTO:$x$) overlayer through chemical composition modifies the quantum confinement of the 2DEL in SrTiO$_3$ and its electronic band structure. The analysis of the behaviour in magnetic field of superconducting field-effect devices reveals, in agreement with $ab\ initio$ calculations and self-consistent Poisson-Schrödinger modelling, that quantum confinement and energy splitting between electronic bands of different symmetries strongly depend on interface charge densities. These results not only strongly support the polar discontinuity mechanisms with a full charge transfer to explain the origin of the 2DEL at the celebrated LaAlO$_3$/SrTiO$_3$ interface, but also demonstrate an effective tool for tailoring the electronic structure at oxide interfaces. △ Less

Submitted 11 September, 2018; originally announced September 2018.

Comments: 18 pages, 4 figures, 1 ancillary file (Supporting Information)

Journal ref: Advanced Science 5, 1800242 (2018)

Optically probing the detection mechanism in a molybdenum silicide superconducting nanowire single-photon detector

Authors: Misael Caloz, Boris Korzh, Nuala Timoney, Markus Weiss, Stefano Gariglio, Richard J. Warburton, Christian Schönenberger, Jelmer Renema, Hugo Zbinden, Felix Bussieres

Abstract: We experimentally investigate the detection mechanism in a meandered molybdenum silicide (MoSi) superconducting nanowire single-photon detector by characterising the detection probability as a function of bias current in the wavelength range of 750 to 2050 nm. Contrary to some previous observations on niobium nitride (NbN) or tungsten silicide (WSi) detectors, we find that the energy-current relat… ▽ More We experimentally investigate the detection mechanism in a meandered molybdenum silicide (MoSi) superconducting nanowire single-photon detector by characterising the detection probability as a function of bias current in the wavelength range of 750 to 2050 nm. Contrary to some previous observations on niobium nitride (NbN) or tungsten silicide (WSi) detectors, we find that the energy-current relation is nonlinear in this range. Furthermore, thanks to the presence of a saturated detection efficiency over the whole range of wavelengths, we precisely quantify the shape of the curves. This allows a detailed study of their features, which are indicative of both Fano fluctuations and position-dependent effects. △ Less

Submitted 24 November, 2016; originally announced November 2016.

Journal ref: Appl. Phys. Lett. 110, 083106 (2017)

Modulation of the superconducting critical temperature due to quantum confinement at the LaAlO$_3$/SrTiO$_3$ interface

Authors: D. Valentinis, S. Gariglio, A. Fête, J. -M. Triscone, C. Berthod, D. van der Marel

Abstract: Superconductivity develops in bulk doped SrTiO$_3$ and at the LaAlO$_3$/SrTiO$_3$ interface with a dome-shaped density dependence of the critical temperature $T_c$, despite different dimensionalities and geometries. We propose that the $T_c$ dome of LaAlO$_3$/SrTiO$_3$ is a shape resonance due to quantum confinement of superconducting bulk SrTiO$_3$. We substantiate this interpretation by comparin… ▽ More Superconductivity develops in bulk doped SrTiO$_3$ and at the LaAlO$_3$/SrTiO$_3$ interface with a dome-shaped density dependence of the critical temperature $T_c$, despite different dimensionalities and geometries. We propose that the $T_c$ dome of LaAlO$_3$/SrTiO$_3$ is a shape resonance due to quantum confinement of superconducting bulk SrTiO$_3$. We substantiate this interpretation by comparing the exact solutions of a three-dimensional and quasi-two-dimensional two-band BCS gap equation. This comparison highlights the role of heavy bands for $T_c$ in both geometries. For bulk SrTiO$_3$, we extract the density dependence of the pairing interaction from the fit to experimental data. We apply quantum confinement in a square potential well of finite depth and calculate $T_c$ in the confined configuration. We compare the calculated $T_c$ to transport experiments and provide an explanation as to why the optimal $T_c$'s are so close to each other in two-dimensional interfaces and the three-dimensional bulk material. △ Less

Submitted 21 September, 2017; v1 submitted 23 November, 2016; originally announced November 2016.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 96, 094518 (2017)

Sequential pulsed laser deposition of homoepitaxial SrTiO$_3$ thin films

Authors: D. J. Groenendijk, S. Gariglio

Abstract: Control of thin film stoichiometry is of primary relevance to achieve desired functionality. Pulsed laser deposition ablating from binary-oxide targets (sequential deposition) can be applied to precisely control the film composition, offsetting the importance of growth conditions on the film stoichiometry. In this work, we demonstrate that the cation stoichiometry of SrTiO$_3$ thin films can be fi… ▽ More Control of thin film stoichiometry is of primary relevance to achieve desired functionality. Pulsed laser deposition ablating from binary-oxide targets (sequential deposition) can be applied to precisely control the film composition, offsetting the importance of growth conditions on the film stoichiometry. In this work, we demonstrate that the cation stoichiometry of SrTiO$_3$ thin films can be finely tuned by sequential deposition from SrO and TiO$_2$ targets. Homoepitaxial SrTiO$_3$ films were deposited at different substrate temperatures and Ti/Sr pulse ratios, allowing the establishment of a growth window for stoichiometric SrTiO$_3$. The growth kinetics and nucleation processes were studied by reflection high-energy electron diffraction and atomic force microscopy, providing information about the growth mode and the degree of off-stoichiometry. At the optimal (stoichiometric) growth conditions, films exhibit atomically flat surfaces, whereas off-stoichiometry is accommodated by crystal defects, 3D islands and/or surface precipitates depending on the substrate temperature and the excess cation. This technique opens the way to precisely control stoichiometry and doping of oxide thin films. △ Less

Submitted 12 September, 2016; originally announced September 2016.

Comments: 6 pages, 5 figures

Large phonon-drag enhancement induced by narrow quantum confinement at the LaAlO3/SrTiO3 interface

Authors: I. Pallecchi, F. Telesio, D. Marre', D. Li, S. Gariglio, J. -M. Triscone, A. Filippetti

Abstract: The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T =50 K where thermopower is dominated by phonon-drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values ~mV/K an… ▽ More The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T =50 K where thermopower is dominated by phonon-drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values ~mV/K and above. The phonon-drag enhancement at the interface is traced back to the tight carrier confinement of the 2DES, and represents a sharp signature of strong electron-acoustic phonon coupling at the interface. △ Less

Submitted 18 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 93, 195309 (2016)

Epitaxial growth and thermodynamic stability of SrIrO3/SrTiO3 heterostructures

Authors: D. J. Groenendijk, N. Manca, G. Mattoni, L. Kootstra, S. Gariglio, Y. Huang, E. van Heumen, A. D. Caviglia

Abstract: Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modifica… ▽ More Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO3 target surface. We further demonstrate that bare SrIrO3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO3 cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO3 encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro- and nanoscale devices. △ Less

Submitted 5 August, 2016; v1 submitted 9 May, 2016; originally announced May 2016.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 109, 041906 (2016)

Fabricating Superconducting Interfaces between Artificially-Grown LaAlO$_3$ and SrTiO$_3$ Thin Films

Authors: Danfeng Li, Stefano Gariglio, Claudia Cancellieri, Alexandre Fête, Daniela Stornaiuolo, Jean-Marc Triscone

Abstract: Realization of a fully metallic two-dimensional electron gas at the interface between artificially-grown LaAlO$_3$ and SrTiO$_3$ thin films has been an exciting challenge. Here we present for the first time the successful realization of a superconducting 2DEG at interfaces between artificially-grown LaAlO$_3$ and SrTiO$_3$ thin films. Our results highlight the importance of two factors-the growth… ▽ More Realization of a fully metallic two-dimensional electron gas at the interface between artificially-grown LaAlO$_3$ and SrTiO$_3$ thin films has been an exciting challenge. Here we present for the first time the successful realization of a superconducting 2DEG at interfaces between artificially-grown LaAlO$_3$ and SrTiO$_3$ thin films. Our results highlight the importance of two factors-the growth temperature and the SrTiO$_3$ termination. We use local friction force microscopy and transport measurements to determine that in normal growth conditions the absence of a robust metallic state at low temperature in the artificially-grown LaAlO$_3$/SrTiO$_3$ interface is due to the nanoscale SrO segregation occurring on the SrTiO$_3$ film surface during the growth and the associated defects in the SrTiO$_3$ film. By adopting an extremely high SrTiO$_3$ growth temperature, we demonstrate a way to realize metallic, down to the lowest temperature, and superconducting 2DEG at interfaces between LaAlO$_3$ layers and artificially-grown SrTiO$_3$ thin films. This study paves the way to the realization of functional LaAlO$_3$/SrTiO$_3$ superlattices and/or artificial LaAlO$_3$/SrTiO$_3$ interfaces on other substrates. △ Less

Submitted 12 June, 2015; originally announced June 2015.

Journal ref: APL Materials 2, 012102 (2014)

Magneto-transport study of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures

Authors: W. Liu, S. Gariglio, A. F, D. Li, M. Boselli, D. Stornaiuolo, J. -M. Triscone

Abstract: We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the… ▽ More We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating. △ Less

Submitted 18 May, 2015; originally announced May 2015.

Comments: 15 pages, 6 figures

Journal ref: APL Mat. 3, 062805 (2015)

Giant Oscillating Thermopower at Oxide Interfaces

Authors: I. Pallecchi, F. Telesio, D. Li, A. Fête, S. Gariglio, J. -M. Triscone, A. Filippetti, P. Delugas, V. Fiorentini, D. Marré

Abstract: Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures. Here, we investigate thermopower to study the electronic structure in LaAlO3/SrTiO3 at low temperature as a function of gate field. In particular, under large negative gate voltage, corresponding to the… ▽ More Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures. Here, we investigate thermopower to study the electronic structure in LaAlO3/SrTiO3 at low temperature as a function of gate field. In particular, under large negative gate voltage, corresponding to the strongly depleted charge density regime, thermopower displays record-high negative values of the order of 10^4 - 10^5 microV/K, oscillating at regular intervals as a function of the gate voltage. The huge thermopower magnitude can be attributed to the phonon-drag contribution, while the oscillations map the progressive depletion and the Fermi level descent across a dense array of localized states lying at the bottom of the Ti 3d conduction band. This study is the first direct evidence of a localized Anderson tail in the two-dimensional (2D) electron liquid at the LaAlO3/SrTiO3 interface. △ Less

Submitted 8 April, 2015; originally announced April 2015.

Comments: Main text: 28 pages and 3 figures; Supplementary information: 29 pages, 5 figures and 1 table

Journal ref: Nature Comm. 6, 6678 (2015)

Proposed cavity Josephson plasmonics with complex-oxide heterostructures

Authors: Yannis Laplace, Stephanie Fernandez-Pena, Stefano Gariglio, Jean-Marc Triscone, Andrea Cavalleri

Abstract: We discuss how complex-oxide heterostructures that include high-Tc superconducting cuprates can be used to realize an array of sub-millimeter cavities that support Josephson plasmon polaritons. These cavities have several attractive features for new types of light matter interaction studies and we show that they promote "ultrastrong" coupling between THz frequency radiation and Josephson plasmons.… ▽ More We discuss how complex-oxide heterostructures that include high-Tc superconducting cuprates can be used to realize an array of sub-millimeter cavities that support Josephson plasmon polaritons. These cavities have several attractive features for new types of light matter interaction studies and we show that they promote "ultrastrong" coupling between THz frequency radiation and Josephson plasmons. Cavity electrodynamics of Josephson plasmons allows to manipulate the superconducting order-parameter phase coherence. As an example, we discuss how it could be used to cool superconducting phase fluctuations with light. △ Less

Submitted 6 January, 2016; v1 submitted 20 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 93, 075152 (2016)

Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface

Authors: A. Fête, C. Cancellieri, D. Li, D. Stornaiuolo, A. D. Caviglia, S. Gariglio, J. -M. Triscone

Abstract: We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650°C exhibit the highest low temperature mobility ($\approx 10000 \textrm{ cm}^2/\textrm{Vs}$) and the lowest sheet carrier density ($\approx 5\times 10^{12} \textrm{ cm}^{-2}$). Th… ▽ More We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650°C exhibit the highest low temperature mobility ($\approx 10000 \textrm{ cm}^2/\textrm{Vs}$) and the lowest sheet carrier density ($\approx 5\times 10^{12} \textrm{ cm}^{-2}$). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900°C) display carrier densities in the range of $\approx 2-5 \times 10^{13} \textrm{ cm}^{-2}$ and mobilities of $\approx 1000 \textrm{ cm}^2/\textrm{Vs}$ at 4K. Reducing their carrier density by field effect to $8\times 10^{12} \textrm{ cm}^{-2}$ lowers their mobilites to $\approx 50 \textrm{ cm}^2/\textrm{Vs}$ bringing the conductance to the weak-localization regime. △ Less

Submitted 19 March, 2015; originally announced March 2015.

Journal ref: Appl. Phys. Lett. 106, 051604 (2015)

Weak-localization and spin-orbit interaction in side-gate field effect devices at the LaAlO$_3$/SrTiO$_3$ interface

Authors: D. Stornaiuolo, S. Gariglio, A. Fête, M. Gabay, D. Li, D. Massarotti, J. -M. Triscone

Abstract: Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO$_3$/SrTiO$_3$ interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies… ▽ More Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO$_3$/SrTiO$_3$ interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies. We find that the spin-orbit interaction strongly affects the low temperature transport in the normal state in a very large region of the phase diagram, extending beyond the superconducting dome. △ Less

Submitted 19 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 90, 235426 (2014)

Large modulation of the Shubnikov-de Haas oscillations by the Rashba interaction at the LaAlO$_{3}$/SrTiO$_{3}$ interface

Authors: A. Fête, S. Gariglio, C. Berthod, D. Li, D. Stornaiuolo, M. Gabay, J. -M. Triscone

Abstract: We investigate the 2-dimensional Fermi surface of high-mobility LaAlO$_3$/SrTiO$_3$ interfaces using Shubnikov-de Haas oscillations. Our analysis of the oscillation pattern underscores the key role played by the Rashba spin-orbit interaction brought about by the breaking of inversion symmetry, as well as the dominant contribution of the heavy $d_{xz}$/$d_{yz}$ orbitals on electrical transport. We… ▽ More We investigate the 2-dimensional Fermi surface of high-mobility LaAlO$_3$/SrTiO$_3$ interfaces using Shubnikov-de Haas oscillations. Our analysis of the oscillation pattern underscores the key role played by the Rashba spin-orbit interaction brought about by the breaking of inversion symmetry, as well as the dominant contribution of the heavy $d_{xz}$/$d_{yz}$ orbitals on electrical transport. We furthermore bring into light the complex evolution of the oscillations with the carrier density, which is tuned by the field effect. △ Less

Submitted 21 November, 2014; v1 submitted 18 July, 2014; originally announced July 2014.

In-plane electronic confinement in superconducting LaAlO$_3$/SrTiO$_3$ nanostructures

Authors: D. Stornaiuolo, S. Gariglio, N. J. G. Couto, A. Fete, A. D. Caviglia, G. Seyfarth, D. Jaccard, A. F. Morpurgo, J. -M. Triscone

Abstract: We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconduc… ▽ More We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO$_3$/SrTiO$_3$ interface. △ Less

Submitted 6 June, 2013; originally announced June 2013.

Comments: 10 pages, 4 figures

Journal ref: Appl. Phys. Lett. 101, 222601 (2012)

Ferromagnetism and Ferroelectricity in epitaxial ultra-thin BiMnO3 films

Authors: G. M. De Luca, D. Preziosi, F. Chiarella, R. Di Capua, S. Gariglio, S. Lettieri, M. Salluzzo

Abstract: We studied the ferroelectric and ferromagnetic properties of compressive strained and unstrained BiMnO3 thin films grown by rf-magnetron sputtering. BiMnO3 samples exhibit a 2D cube-on-cube growth mode and a pseudo-cubic struc-ture up to a thickness of 15 nm and of 25 nm when deposited on (001) SrTiO3 and (110) DyScO3, respectively. Above these thicknesses we observe a switching to a 3D island gro… ▽ More We studied the ferroelectric and ferromagnetic properties of compressive strained and unstrained BiMnO3 thin films grown by rf-magnetron sputtering. BiMnO3 samples exhibit a 2D cube-on-cube growth mode and a pseudo-cubic struc-ture up to a thickness of 15 nm and of 25 nm when deposited on (001) SrTiO3 and (110) DyScO3, respectively. Above these thicknesses we observe a switching to a 3D island growth and a simultaneous structural change to a monoclinic structure characterized by a (00l) orientation of the monoclinic unit cell. While ferromagnetism is observed below Tc = 100 K for all samples, signatures of room temperature ferroelectricity were found only in the pseudo-cubic ultra-thin films, indicating a correlation between electronic and structural orders. △ Less

Submitted 5 June, 2013; originally announced June 2013.

Comments: 4 pages, 4 figures

Origin of interface magnetism in BiMnO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures

Authors: M. Salluzzo, S. Gariglio, D. Stornaiuolo, V. Sessi, S. Rusponi, C. Piamonteze, G. M. De Luca, M. Minola, D. Marré, A. Gadaleta, H. Brune, F. Nolting, N. B. Brookes, G. Ghiringhelli

Abstract: Possible ferromagnetism induced in otherwise non-magnetic materials has been motivating intense research in complex oxide heterostructures. Here we show that a confined magnetism is realized at the interface between SrTiO3 and two insulating polar oxides, BiMnO3 and LaAlO3. By using polarization dependent x-ray absorption spectroscopy, we find that in both cases the magnetic order is stabilized by… ▽ More Possible ferromagnetism induced in otherwise non-magnetic materials has been motivating intense research in complex oxide heterostructures. Here we show that a confined magnetism is realized at the interface between SrTiO3 and two insulating polar oxides, BiMnO3 and LaAlO3. By using polarization dependent x-ray absorption spectroscopy, we find that in both cases the magnetic order is stabilized by a negative exchange interaction between the electrons transferred to the interface and local magnetic moments. These local magnetic moments are associated to Ti3+ ions at the interface itself for LaAlO3/SrTiO3 and to Mn3+ ions in the overlayer for BiMnO3/SrTiO3. In LaAlO3/SrTiO3 the induced magnetic moments are quenched by annealing in oxygen, suggesting a decisive role of oxygen vacancies in the stabilization of interfacial magnetism. △ Less

Submitted 9 July, 2013; v1 submitted 9 May, 2013; originally announced May 2013.

Comments: 5 pages, 4 figures

Conduction at domain walls in insulating Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ thin films

Authors: J. Guyonnet, I. Gaponenko, S. Gariglio, P. Paruch

Abstract: Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of electrical conduction also at 180° ferroelectric domain walls in the simpler tetragonal ferroelectric PZT thin films. The observed conduction shows nonlinear, asymm… ▽ More Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of electrical conduction also at 180° ferroelectric domain walls in the simpler tetragonal ferroelectric PZT thin films. The observed conduction shows nonlinear, asymmetric current-voltage characteristics, thermal activation at high temperatures and high stability. We relate this behavior to the microscopic structure of the domain walls, allowing local defects segregation, and the highly asymmetric nature of the electrodes in our local probe measurements. △ Less

Submitted 1 May, 2012; originally announced May 2012.

Journal ref: J. Guyonnet, I. Gaponenko, S. Gariglio, and P. Paruch, Adv. Mat. 23, 5377 (2011)

Rashba induced magnetoconductance oscillations in the LaAlO3-SrTiO3 heterostructure

Authors: A. Fête, S. Gariglio, A. D. Caviglia, J. -M. Triscone, M. Gabay

Abstract: We report measurements of the normal state in-plane magnetoconductance in gated LaAlO$_3$-SrTiO$_3$ samples. As the orientation of the magnetic field changes within the plane of the interface, the signal displays periodic oscillations with respect to the angle between the field and the direction of the current. We show that in the underdoped to optimally doped range, a Fermi surface reconstruction… ▽ More We report measurements of the normal state in-plane magnetoconductance in gated LaAlO$_3$-SrTiO$_3$ samples. As the orientation of the magnetic field changes within the plane of the interface, the signal displays periodic oscillations with respect to the angle between the field and the direction of the current. We show that in the underdoped to optimally doped range, a Fermi surface reconstruction takes place due to the Rashba spin-orbit term and that the oscillations are due to a magnetic field induced opening and closing of a gap at the $Γ$ point for those Ti out-of-plane orbitals having their band minimum close to the Fermi energy of the system. △ Less

Submitted 13 July, 2012; v1 submitted 23 March, 2012; originally announced March 2012.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 86, 201105(R) (2012)

Intrinsic origin of the two-dimensional electron gas at polar oxide interfaces

Authors: M. L. Reinle-Schmitt, C. Cancellieri, D. Li, D. Fontaine, M. Medarde, E. Pomjakushina, C. W. Schneider, S. Gariglio, Ph. Ghosez, J. -M. Triscone, P. R. Willmott

Abstract: The predictions of the polar catastrophe scenario to explain the occurrence of a metallic interface in heterostructures of the solid solution(LaAlO$_3$)$_{x}$(SrTiO$_3$)$_{1-x}$ (LASTO:x) grown on (001) SrTiO$_3$ were investigated as a function of film thickness and $x$. The films are insulating for the thinnest layers, but above a critical thickness, $t_c$, the interface exhibits a constant finit… ▽ More The predictions of the polar catastrophe scenario to explain the occurrence of a metallic interface in heterostructures of the solid solution(LaAlO$_3$)$_{x}$(SrTiO$_3$)$_{1-x}$ (LASTO:x) grown on (001) SrTiO$_3$ were investigated as a function of film thickness and $x$. The films are insulating for the thinnest layers, but above a critical thickness, $t_c$, the interface exhibits a constant finite conductivity which depends in a predictable manner on $x$. It is shown that $t_c$ scales with the strength of the built-in electric field of the polar material, and is immediately understandable in terms of an electronic reconstruction at the nonpolar-polar interface. These results thus conclusively identify the polar-catastrophe model as the intrinsic origin of the doping at this polar oxide interface. △ Less

Submitted 15 December, 2011; originally announced December 2011.

Comments: 4 pages, 3 figures

Ultrafast strain engineering in complex oxide heterostructures

Authors: A. D. Caviglia, R. Scherwitzl, P. Popovich, W. Hu, H. Bromberger, R. Singla, M. Mitrano, M. C. Hoffmann, S. Kaiser, P. Zubko, S. Gariglio, J. -M. Triscone, M. Först, A. Cavalleri

Abstract: We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interfa… ▽ More We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates. △ Less

Submitted 14 November, 2011; originally announced November 2011.

Metal-insulator transition in ultrathin LaNiO3 films

Authors: R. Scherwitzl, S. Gariglio, M. Gabay, P. Zubko, M. Gibert, J. -M. Triscone

Abstract: Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low- temperature conductivity are observed; they are accurately described by weak localization theory. Rem… ▽ More Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low- temperature conductivity are observed; they are accurately described by weak localization theory. Remarkably, the negative magnetoresistance in this regime is isotropic, which points to magnetic scattering associated with the proximity of the system to either a spin glass state or the charge ordered antiferromagnetic state observed in other rare earth nickelates. △ Less

Submitted 9 June, 2011; v1 submitted 26 January, 2011; originally announced January 2011.

Comments: 4 pages, 4 figures, accepted for publication in PRL

Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces

Authors: A. D. Caviglia, S. Gariglio, C. Cancellieri, B. Sacépé, A. Fête, N. Reyren, M. Gabay, A. F. Morpurgo, J. -M. Triscone

Abstract: We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi surface. The frequency of the oscillations signals a multiple sub-bands occupation in the quantum well or a multiple valley configuration. From the temperature… ▽ More We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi surface. The frequency of the oscillations signals a multiple sub-bands occupation in the quantum well or a multiple valley configuration. From the temperature dependence of the oscillation amplitude we extract an effective carrier mass $m^{*}\simeq1.45$\,$m_{e}$. An electric field applied in the back-gate geometry increases the mobility, the carrier density and the oscillation frequency. △ Less

Submitted 28 July, 2010; originally announced July 2010.

Comments: 4 pages, 4 figures

Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces

Authors: R. Jany, M. Breitschaft, G. Hammerl, A. Horsche, C. Richter, S. Paetel, J. Mannhart, N. Stucki, N. Reyren, S. Gariglio, P. Zubko, A. D. Caviglia, J. -M. Triscone

Abstract: Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C. Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C. △ Less

Submitted 6 May, 2010; originally announced May 2010.

Seebeck effect in the conducting LaAlO_{3}/SrTiO_{3} interface

Authors: I. Pallecchi, M. Codda, E. Galleani d'Agliano, D. Marre', A. D. Caviglia, N. Reyren, S. Gariglio, J. -M. Triscone

Abstract: The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interf… ▽ More The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interfaces and, for comparison, in a doped SrTiO_{3} bulk single crystal. In these experiments, the carrier concentration is tuned, using the field effect in a back gate geometry. The combined analysis of all experimental data at 77 K indicates that the thickness of the conducting layer is ~7 nm and that the Seebeck effect data are well described by a two-dimensional (2D) density of states. We find that the back gate voltage is effective in varying not only the charge density, but also the thickness of the conducting layer, which is found to change by a factor of ~2, using an electric field between -4 and +4MV/m at 77K. No enhancement of the Seebeck effect due to the electronic confinement and no evidence for two-dimensional quantization steps are observed at the interfaces. △ Less

Submitted 9 February, 2010; originally announced February 2010.

Comments: 15 pages, 5 figures

Journal ref: Phys. Rev. B 81, 085414 (2010)

Tunable Rashba spin-orbit interaction at oxide interfaces

Authors: A. D. Caviglia, M. Gabay, S. Gariglio, N. Reyren, C. Cancellieri, J. -M. Triscone

Abstract: The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new example of an electronic property arising from the interfacial breaking of inversion symmetry, namely a large Rashba spin-orbit interaction, whose magnitude ca… ▽ More The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new example of an electronic property arising from the interfacial breaking of inversion symmetry, namely a large Rashba spin-orbit interaction, whose magnitude can be modulated by the application of an external electric field. By means of magnetotransport experiments we explore the evolution of the spin-orbit coupling across the phase diagram of the system. We uncover a steep rise in Rashba interaction occurring around the doping level where a quantum critical point separates the insulating and superconducting ground states of the system. △ Less

Submitted 18 December, 2009; originally announced December 2009.

Shear effects in lateral piezoresponse force microscopy at 180$^\circ$ ferroelectric domain walls

Authors: J. Guyonnet, H. Bea, F. Guy, S. Gariglio, S. Fusil, K. Bouzehouane, J. -M. Triscone, P. Paruch

Abstract: In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreem… ▽ More In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO$_3$ films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization, and has to be taken into account in order to correctly interpret the ferroelectric domain configuration. △ Less

Submitted 2 September, 2010; v1 submitted 27 July, 2009; originally announced July 2009.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 95, 132902 (2009)

Electrostatically tuned quantum superconductor-metal-insulator transition at the LaAlO3/SrTiO3 interface

Authors: T. Schneider, A. D. Caviglia, S. Gariglio, N. Reyren, 2, J. -M. Triscone

Abstract: Recently superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect to an unprecedented range of transition temperatures. Here we perform a detailed finite size scaling analysis to explore the compatibility of the phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-quantum phase(QP)-transition. In an in… ▽ More Recently superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect to an unprecedented range of transition temperatures. Here we perform a detailed finite size scaling analysis to explore the compatibility of the phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-quantum phase(QP)-transition. In an intermediate regime, limited by a gate voltage dependent limiting length, we uncover remarkable consistency with a BKT-critical line ending at a metallic quantum critical point, separating a weakly localized insulator from the superconducting phase. Our estimates for the critical exponents of the 2D-QP-transition, z=1 and nu=0.66, suggest that it belongs to the 3D-xy universality class. △ Less

Submitted 16 April, 2009; originally announced April 2009.

Comments: 10 pages, 10 figures

Superconductor - Normal and Quantum Superconductor-Insulator Transition at the LaAlO3/SrTiO3Interface

Authors: T. Schneider, A. D. Caviglia, S. Gariglio, N. Reyren, D. Jaccard, J. -M. Triscone

Abstract: Superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect. The data provide evidence for a two dimensional quantum superconductor to insulator (2D-QSI) transition. Here we explore the compatibility of this phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-QSI transition. In an intermediate regime, li… ▽ More Superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect. The data provide evidence for a two dimensional quantum superconductor to insulator (2D-QSI) transition. Here we explore the compatibility of this phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-QSI transition. In an intermediate regime, limited by a finite size effect, we uncover remarkable consistency with BKT- criticality, weak localization in the insulating state and non-Drude behavior in the normal state. Our estimates for the critical exponents of the 2D-QSI-transition, z =1 and nu=3, suggest that it belongs to the 3D-xy universality class. △ Less

Submitted 4 July, 2008; originally announced July 2008.

Comments: 4 pages, 4 figures

Electric Field Control of the LaAlO$_{3}$/SrTiO$_{3}$ Interface Ground State

Authors: A. D. Caviglia, S. Gariglio, N. Reyren, D. Jaccard, T. Schneider, M. Gabay, S. Thiel, G. Hammerl, J. Mannhart, J. -M. Triscone

Abstract: Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A p… ▽ More Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A particularly fascinating system is the interface between the insulators LaAlO$_{3}$ and SrTiO$_{3}$, which displays conductivity with high mobility. Recently two possible ground states have been experimentally identified: a magnetic state and a two dimensional (2D) superconducting condensate. In this Letter we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition (QPT) between a 2D superconducting state and an insulating state (2D-QSI). Analyses of the magnetotransport properties in the insulating state are consistent with weak localisation and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of novel mesoscopic superconducting circuits △ Less

Submitted 3 July, 2008; originally announced July 2008.

Comments: 11 pages, 4 figures

Epitaxial Growth of Multiferroic YMnO3 on GaN

Authors: A. Posadas, J. -B. Yau, J. Han, C. H. Ahn, S. Gariglio, K. Johnston, J. B. Neaton, K. M. Rabe

Abstract: In this work, we report on the epitaxial growth of multiferroic YMnO3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30 degree rotation between the unit cells of YMnO3 and GaN that results in a much larger lattice mismatch (10%) compared to the unrotated case. Estimates based on first principles calculations show that the b… ▽ More In this work, we report on the epitaxial growth of multiferroic YMnO3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30 degree rotation between the unit cells of YMnO3 and GaN that results in a much larger lattice mismatch (10%) compared to the unrotated case. Estimates based on first principles calculations show that the bonding energy gained from the rotated atomic arrangement compensates for the increase in strain energy due to the larger lattice mismatch. Understanding the energy competition between chemical bonding energy and strain energy provides insight into the heteroepitaxial growth mechanisms of complex oxide-semiconductor systems. △ Less

Submitted 19 August, 2005; originally announced August 2005.

Comments: 12 pages, 3 figures

Growth of Single Unit-Cell Superconducting La$_{2-x}$Sr$_x$CuO$_{4}$ Films

Authors: A. Rufenacht, P. Chappatte, S. Gariglio, Ch. Leemann, J. Fompeyrine, J. -P. Locquet, P. Martinoli

Abstract: We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La$_{1.9}$Sr$_{0.1}$CuO$_{4}$ film. The main resu… ▽ More We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La$_{1.9}$Sr$_{0.1}$CuO$_{4}$ film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO$_4$ substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth $λ_{ab}(0)$ = 535 nm. △ Less

Submitted 13 February, 2003; originally announced February 2003.

Comments: to be published in "Solid State Electonics" special issue, conference proceedings of the 9th Workshop on Oxide Electronics, St-Pete Beach, FL, 20-23 november 2002 : 12 pages 4 figures in preprint version

Hall effect in underdoped GdBa2Cu3O7-d thin films: evidence for a crossover line in the pseudogap regime

Authors: D. Matthey, S. Gariglio, B. Giovannini, J. -M. Triscone

Abstract: We report on measurements of the resistivity and Hall coefficient in underdoped GdBa2Cu3O7-d epitaxial thin films grown by off-axis magnetron sputtering. The films have been lithographically patterned allowing precise measurements of the temperature dependencies of the inverse Hall constant RH-1 and of the Hall angle theta_H. We find that RH-1 is linear in temperature between 300K and the pseudo… ▽ More We report on measurements of the resistivity and Hall coefficient in underdoped GdBa2Cu3O7-d epitaxial thin films grown by off-axis magnetron sputtering. The films have been lithographically patterned allowing precise measurements of the temperature dependencies of the inverse Hall constant RH-1 and of the Hall angle theta_H. We find that RH-1 is linear in temperature between 300K and the pseudogap temperature T*, whereas cot(theta_H) displays a perfect T2 temperature dependence between typically 300 and 100K. We observe for all the samples that the temperature at which the temperature dependence of cot(theta_H) deviates from the T2 behavior is correlated to the temperature at which RH displays a peak. This characteristic temperature, found to lie between Tc and T*, does not depend markedly on the doping level and defines a new crossover line in the temperature versus doping phase diagram. We tentatively relate these findings to recent high frequency conductivity and Nernst effect experimental results, and we briefly discuss the possible consequences for competing theories for the pseudogap state of the cuprates. △ Less

Submitted 18 April, 2001; originally announced April 2001.

Comments: 6 pages, 4 figures, RevTEX, to appear in Phys. Rev. B