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Electronic transport across realistic grain boundaries in graphene
Authors:
Fernando Gargiulo
Abstract:
We perform a MonteCarlo simulation in order to study the connection between the morphology and the transport properties of grain boundaries (GBs) in graphene. We explore the configurational space of GBs to generate ensembles of realistic models of disordered interfaces between graphene misoriented domains. Among other observables, transmission across GBs has been probed all along the simulation, t…
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We perform a MonteCarlo simulation in order to study the connection between the morphology and the transport properties of grain boundaries (GBs) in graphene. We explore the configurational space of GBs to generate ensembles of realistic models of disordered interfaces between graphene misoriented domains. Among other observables, transmission across GBs has been probed all along the simulation, thus making us able to establish a connection between averaged transmission and the topological invariant of GBs, the misorientation angle. We extend to disordered GBs the remarkable result that the low angle regime is characterized by a decrease of the individual GB conductance upon a reduction of the angle, as first found for periodic GBs. However, we explored a comprehensive range of misorientation angles such that our results should serve as a starting data set to study the effect of polycrystallicity on transport in large samples.
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Submitted 14 July, 2021;
originally announced July 2021.
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Materials Cloud, a platform for open computational science
Authors:
Leopold Talirz,
Snehal Kumbhar,
Elsa Passaro,
Aliaksandr V. Yakutovich,
Valeria Granata,
Fernando Gargiulo,
Marco Borelli,
Martin Uhrin,
Sebastiaan P. Huber,
Spyros Zoupanos,
Carl S. Adorf,
Casper W. Andersen,
Ole Schütt,
Carlo A. Pignedoli,
Daniele Passerone,
Joost VandeVondele,
Thomas C. Schulthess,
Berend Smit,
Giovanni Pizzi,
Nicola Marzari
Abstract:
Materials Cloud is a platform designed to enable open and seamless sharing of resources for computational science, driven by applications in materials modelling. It hosts 1) archival and dissemination services for raw and curated data, together with their provenance graph, 2) modelling services and virtual machines, 3) tools for data analytics, and pre-/post-processing, and 4) educational material…
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Materials Cloud is a platform designed to enable open and seamless sharing of resources for computational science, driven by applications in materials modelling. It hosts 1) archival and dissemination services for raw and curated data, together with their provenance graph, 2) modelling services and virtual machines, 3) tools for data analytics, and pre-/post-processing, and 4) educational materials. Data is citable and archived persistently, providing a comprehensive embodiment of the FAIR principles that extends to computational workflows. Materials Cloud leverages the AiiDA framework to record the provenance of entire simulation pipelines (calculations performed, codes used, data generated) in the form of graphs that allow to retrace and reproduce any computed result. When an AiiDA database is shared on Materials Cloud, peers can browse the interconnected record of simulations, download individual files or the full database, and start their research from the results of the original authors. The infrastructure is agnostic to the specific simulation codes used and can support diverse applications in computational science that transcend its initial materials domain.
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Submitted 27 March, 2020;
originally announced March 2020.
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AiiDA 1.0, a scalable computational infrastructure for automated reproducible workflows and data provenance
Authors:
Sebastiaan. P. Huber,
Spyros Zoupanos,
Martin Uhrin,
Leopold Talirz,
Leonid Kahle,
Rico Häuselmann,
Dominik Gresch,
Tiziano Müller,
Aliaksandr V. Yakutovich,
Casper W. Andersen,
Francisco F. Ramirez,
Carl S. Adorf,
Fernando Gargiulo,
Snehal Kumbhar,
Elsa Passaro,
Conrad Johnston,
Andrius Merkys,
Andrea Cepellotti,
Nicolas Mounet,
Nicola Marzari,
Boris Kozinsky,
Giovanni Pizzi
Abstract:
The ever-growing availability of computing power and the sustained development of advanced computational methods have contributed much to recent scientific progress. These developments present new challenges driven by the sheer amount of calculations and data to manage. Next-generation exascale supercomputers will harden these challenges, such that automated and scalable solutions become crucial.…
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The ever-growing availability of computing power and the sustained development of advanced computational methods have contributed much to recent scientific progress. These developments present new challenges driven by the sheer amount of calculations and data to manage. Next-generation exascale supercomputers will harden these challenges, such that automated and scalable solutions become crucial. In recent years, we have been developing AiiDA (http://www.aiida.net), a robust open-source high-throughput infrastructure addressing the challenges arising from the needs of automated workflow management and data provenance recording. Here, we introduce developments and capabilities required to reach sustained performance, with AiiDA supporting throughputs of tens of thousands processes/hour, while automatically preserving and storing the full data provenance in a relational database making it queryable and traversable, thus enabling high-performance data analytics. AiiDA's workflow language provides advanced automation, error handling features and a flexible plugin model to allow interfacing with any simulation software. The associated plugin registry enables seamless sharing of extensions, empowering a vibrant user community dedicated to making simulations more robust, user-friendly and reproducible.
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Submitted 24 March, 2020;
originally announced March 2020.
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Structural and electronic transformation in low-angle twisted bilayer graphene
Authors:
Fernando Gargiulo,
Oleg V. Yazyev
Abstract:
Experiments on bilayer graphene unveiled a fascinating realization of stacking disorder where triangular domains with well-defined Bernal stacking are delimited by a hexagonal network of strain solitons. Here we show by means of numerical simulations that this is a consequence of a structural transformation of the moiré pattern inherent of twisted bilayer graphene taking place at twist angles $θ$…
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Experiments on bilayer graphene unveiled a fascinating realization of stacking disorder where triangular domains with well-defined Bernal stacking are delimited by a hexagonal network of strain solitons. Here we show by means of numerical simulations that this is a consequence of a structural transformation of the moiré pattern inherent of twisted bilayer graphene taking place at twist angles $θ$ below a crossover angle $θ^{\star}=1.2^{\circ}$. The transformation is governed by the interplay between the interlayer van der Waals interaction and the in-plane strain field, and is revealed by a change in the functional form of the twist energy density. This transformation unveils an electronic regime characteristic of vanishing twist angles in which the charge density converges, though not uniformly, to that of ideal bilayer graphene with Bernal stacking. On the other hand, the stacking domain boundaries form a distinct charge density pattern that provides the STM signature of the hexagonal solitonic network.
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Submitted 11 April, 2018; v1 submitted 23 November, 2017;
originally announced November 2017.
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Disorder engineering and conductivity dome in ReS2 with electrolyte gating
Authors:
Dmitry Ovchinnikov,
Fernando Gargiulo,
Adrien Allain,
Diego José Pasquier,
Dumitru Dumcenco,
Ching-Hwa Ho,
Oleg V. Yazyev,
Andras Kis
Abstract:
Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide (TMDC) family of materials characterized by weak interlayer coupling and a distorted 1T structure. Here, we report on the electrical transport study of mono- and multilayer ReS2 with polymer electrolyte gating. We find that the conductivity of monolayer ReS2 is completely suppressed at high carrier densiti…
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Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide (TMDC) family of materials characterized by weak interlayer coupling and a distorted 1T structure. Here, we report on the electrical transport study of mono- and multilayer ReS2 with polymer electrolyte gating. We find that the conductivity of monolayer ReS2 is completely suppressed at high carrier densities, an unusual feature unique to monolayers, making ReS2 the first example of such a material. While thicker flakes of ReS2 also exhibit a conductivity dome and an insulator-metal-insulator sequence, they do not show a complete conductivity suppression at high doping densities. Using dual-gated devices, we can distinguish the gate-induced doping from the electrostatic disorder induced by the polymer electrolyte itself. Theoretical calculations and a transport model indicate that the observed conductivity suppression can be explained by a combination of a narrow conduction band and Anderson localization due to electrolyte-induced disorder.
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Submitted 31 August, 2016;
originally announced August 2016.
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Electromechanical Oscillations in Bilayer Graphene
Authors:
Muhammed Malik Benameur,
Fernando Gargiulo,
Sajedeh Manzeli,
Gabriel Autes,
Mahmut Tosun,
Oleg V. Yazyev,
Andras Kis
Abstract:
Nanoelectromechanical systems (NEMS) constitute a class of devices lying at the interface between fundamental research and technological applications. Integrating novel materials such as graphene into NEMS allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron-phonon interaction and bandgap engineering. In this…
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Nanoelectromechanical systems (NEMS) constitute a class of devices lying at the interface between fundamental research and technological applications. Integrating novel materials such as graphene into NEMS allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron-phonon interaction and bandgap engineering. In this work, we integrate single and bilayer graphene into NEMS and probe the interplay between their mechanical and electrical properties. We show that the deflection of monolayer graphene nanoribbons results in a linear increase in their electrical resistance. Surprisingly, we observe oscillations in the electromechanical response of bilayer graphene. The proposed theoretical model suggests that these oscillations arise from quantum mechanical interference taking place due to the lateral displacement of graphene layers with respect to each other. Our work shows that bilayer graphene conceals unexpectedly rich and novel physics with promising potential in NEMS-based applications.
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Submitted 30 October, 2015;
originally announced November 2015.
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Grain Boundaries in Graphene on SiC(000$\bar{1}$) Substrate
Authors:
Yann Tison,
Jérôme Lagoute,
Vincent Repain,
Cyril Chacon,
Yann Girard,
Frédéric Joucken,
Robert Sporken,
Fernando Gargiulo,
Oleg V. Yazyev,
Sylvie Rousset
Abstract:
Grain boundaries in epitaxial graphene on the SiC(000$\bar{1}$) substrate are studied using scanning tunneling microscopy and spectroscopy. All investigated small-angle grain boundaries show pronounced out-of-plane buckling induced by the strain fields of constituent dislocations. The ensemble of observations allows to determine the critical misorientation angle of buckling transition…
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Grain boundaries in epitaxial graphene on the SiC(000$\bar{1}$) substrate are studied using scanning tunneling microscopy and spectroscopy. All investigated small-angle grain boundaries show pronounced out-of-plane buckling induced by the strain fields of constituent dislocations. The ensemble of observations allows to determine the critical misorientation angle of buckling transition $θ_c = 19 \pm~2^\circ$. Periodic structures are found among the flat large-angle grain boundaries. In particular, the observed $θ= 33\pm2^\circ$ highly ordered grain boundary is assigned to the previously proposed lowest formation energy structural motif composed of a continuous chain of edge-sharing alternating pentagons and heptagons. This periodic grain boundary defect is predicted to exhibit strong valley filtering of charge carriers thus promising the practical realization of all-electric valleytronic devices.
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Submitted 10 December, 2014;
originally announced December 2014.
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Preferential attachment with partial information
Authors:
Timoteo Carletti,
Floriana Gargiulo,
Renaud Lambiotte
Abstract:
We propose a preferential attachment model for network growth where new entering nodes have a partial information about the state of the network. Our main result is that the presence of bounded information modifies the degree distribution by introducing an exponential tail, while it preserves a power law behaviour over a finite small range of degrees. On the other hand, unbounded information is su…
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We propose a preferential attachment model for network growth where new entering nodes have a partial information about the state of the network. Our main result is that the presence of bounded information modifies the degree distribution by introducing an exponential tail, while it preserves a power law behaviour over a finite small range of degrees. On the other hand, unbounded information is sufficient to let the network grow as in the standard Barabási-Albert model. Surprisingly, the latter feature holds true also when the fraction of known nodes goes asymptotically to zero. Analytical results are compared to direct simulations.
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Submitted 3 September, 2014;
originally announced September 2014.
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Electronic Transport in Graphene with Aggregated Hydrogen Adatoms
Authors:
Fernando Gargiulo,
Gabriel Autès,
Naunidh Virk,
Stefan Barthel,
Malte Rösner,
Lisa R. M. Toller,
Tim O. Wehling,
Oleg V. Yazyev
Abstract:
Hydrogen adatoms and other species covalently bound to graphene act as resonant scattering centers affecting the electronic transport properties and inducing Anderson localization. We show that attractive interactions between adatoms on graphene and their diffusion mobility strongly modify the spatial distribution, thus fully eliminating isolated adatoms and increasing the population of larger siz…
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Hydrogen adatoms and other species covalently bound to graphene act as resonant scattering centers affecting the electronic transport properties and inducing Anderson localization. We show that attractive interactions between adatoms on graphene and their diffusion mobility strongly modify the spatial distribution, thus fully eliminating isolated adatoms and increasing the population of larger size adatom aggregates. Our scaling analysis shows that such aggregation of adatoms increases conductance by up to several orders of magnitude and results in significant extension of the Anderson localization length in the strong localization regime. We introduce a simple definition of the effective adatom concentration $x^\star$ , which describes the transport properties of both random and correlated distributions of hydrogen adatoms on graphene across a broad range of concentrations.
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Submitted 1 August, 2014;
originally announced August 2014.
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Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
Authors:
J. -H. Chen,
G. Autès,
N. Alem,
F. Gargiulo,
A. Gautam,
M. Linck,
C. Kisielowski,
O. V. Yazyev,
S. G. Louie,
A. Zettl
Abstract:
Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of…
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Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.
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Submitted 3 June, 2014;
originally announced June 2014.
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Effects of different electron-phonon couplings on spectral and transport properties of small molecule single-crystal organic semiconductors
Authors:
C. A. Perroni,
F. Gargiulo,
A. Nocera,
V. Marigliano Ramaglia,
V. Cataudella
Abstract:
Spectral and transport properties of small molecule single-crystal organic semiconductors have been theoretically analyzed focusing on oligoacenes, in particular on the series from naphthalene to rubrene and pentacene aiming to show that the inclusion of different electron-phonon couplings is of paramount importance to interpret accurately the properties of prototype organic semiconductors. While,…
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Spectral and transport properties of small molecule single-crystal organic semiconductors have been theoretically analyzed focusing on oligoacenes, in particular on the series from naphthalene to rubrene and pentacene aiming to show that the inclusion of different electron-phonon couplings is of paramount importance to interpret accurately the properties of prototype organic semiconductors. While, in the case of rubrene, the coupling between charge carriers and low frequency inter-molecular modes is sufficient for a satisfactory description of spectral and transport properties, the inclusion of electron coupling to both low frequency inter-molecular and high frequency intra-molecular vibrational modes is needed to account for the temperature dependence of transport properties in smaller oligoacenes.
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Submitted 23 March, 2014;
originally announced March 2014.
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Topological Aspects of Charge-Carrier Transmission across Grain Boundaries in Graphene
Authors:
Fernando Gargiulo,
Oleg V. Yazyev
Abstract:
We systematically investigate the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-Büttiker formalism within the tight-binding approximation. Calculations reveal a strong suppression of transmission at low energies upon decreasing the density of dislocations with the smallest Burger's vector ${\mathbf b}=(1,0)$. The observed tra…
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We systematically investigate the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-Büttiker formalism within the tight-binding approximation. Calculations reveal a strong suppression of transmission at low energies upon decreasing the density of dislocations with the smallest Burger's vector ${\mathbf b}=(1,0)$. The observed transport anomaly is explained from the point of view of back-scattering due to localized states of topological origin. These states are related to the gauge field associated with all dislocations characterized by ${\mathbf b}=(n,m)$ with $n-m \neq 3q$ ($q \in \mathbb{Z}$). Our work identifies an important source of charge-carrier scattering caused by topological defects present in large-area graphene samples produced by chemical vapor deposition.
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Submitted 25 July, 2013;
originally announced July 2013.
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Influence of opinion dynamics on the evolution of games
Authors:
Floriana Gargiulo,
Jose J. Ramasco
Abstract:
Under certain circumstances such as lack of information or bounded rationality, human players can take decisions on which strategy to choose in a game on the basis of simple opinions. These opinions can be modified after each round by observing own or others payoff results but can be also modified after interchanging impressions with other players. In this way, the update of the strategies can bec…
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Under certain circumstances such as lack of information or bounded rationality, human players can take decisions on which strategy to choose in a game on the basis of simple opinions. These opinions can be modified after each round by observing own or others payoff results but can be also modified after interchanging impressions with other players. In this way, the update of the strategies can become a question that goes beyond simple evolutionary rules based on fitness and become a social issue. In this work, we explore this scenario by coupling a game with an opinion dynamics model. The opinion is represented by a continuous variable that corresponds to the certainty of the agents respect to which strategy is best. The opinions transform into actions by making the selection of an strategy a stochastic event with a probability regulated by the opinion. A certain regard for the previous round payoff is included but the main update rules of the opinion are given by a model inspired in social interchanges. We find that the dynamics fixed points of the coupled model is different from those of the evolutionary game or the opinion models alone. Furthermore, new features emerge such as the resilience of the fraction of cooperators to the topology of the social interaction network or to the presence of a small fraction of extremist players.
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Submitted 21 July, 2012; v1 submitted 16 July, 2012;
originally announced July 2012.
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Electronic transport within a quasi two-dimensional model for rubrene single-crystal field effect transistors
Authors:
F. Gargiulo,
C. A. Perroni,
V. Marigliano Ramaglia,
V. Cataudella
Abstract:
Spectral and transport properties of the quasi two-dimensional adiabatic Su-Schrieffer-Heeger model are studied adjusting the parameters in order to model rubrene single-crystal field effect transistors with small but finite density of injected charge carriers. We show that, with increasing temperature $T$, the chemical potential moves into the tail of the density of states corresponding to locali…
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Spectral and transport properties of the quasi two-dimensional adiabatic Su-Schrieffer-Heeger model are studied adjusting the parameters in order to model rubrene single-crystal field effect transistors with small but finite density of injected charge carriers. We show that, with increasing temperature $T$, the chemical potential moves into the tail of the density of states corresponding to localized states, but this is not enough to drive the system into an insulating state. The mobility along different crystallographic directions is calculated including vertex corrections which give rise to a transport lifetime one order of magnitude smaller than spectral lifetime of the states involved in the transport mechanism. With increasing temperature, the transport properties reach the Ioffe-Regel limit which is ascribed to less and less appreciable contribution of itinerant states to the conduction process. The model provides features of the mobility in close agreement with experiments: right order of magnitude, scaling as a power law $T^{-γ}$, with $γ$ close or larger than two, and correct anisotropy ratio between different in-plane directions. Due to a realistic high dimensional model, the results are not biased by uncontrolled approximations.
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Submitted 26 August, 2011;
originally announced August 2011.