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Advancing Simulations of Coupled Electron and Phonon Nonequilibrium Dynamics Using Adaptive and Multirate Time Integration
Authors:
Jia Yao,
Ivan Maliyov,
David J. Gardner,
Carol S. Woodward,
Marco Bernardi
Abstract:
Electronic structure calculations in the time domain provide a deeper understanding of nonequilibrium dynamics in materials. The real-time Boltzmann equation (rt-BTE), used in conjunction with accurate interactions computed from first principles, has enabled reliable predictions of coupled electron and lattice dynamics. However, the timescales and system sizes accessible with this approach are sti…
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Electronic structure calculations in the time domain provide a deeper understanding of nonequilibrium dynamics in materials. The real-time Boltzmann equation (rt-BTE), used in conjunction with accurate interactions computed from first principles, has enabled reliable predictions of coupled electron and lattice dynamics. However, the timescales and system sizes accessible with this approach are still limited, with two main challenges being the different timescales of electron and phonon interactions and the cost of computing collision integrals. As a result, only a few examples of these calculations exist, mainly for two-dimensional (2D) materials. Here we leverage adaptive and multirate time integration methods to achieve a major step forward in solving the coupled rt-BTEs for electrons and phonons. Relative to conventional (non-adaptive) time-stepping, our approach achieves a 10x speedup for a given target accuracy, or greater accuracy by 3-6 orders of magnitude for the same computational cost, enabling efficient calculations in both 2D and bulk materials. This efficiency is showcased by computing the coupled electron and lattice dynamics in graphene up to $\sim$100 ps, as well as modeling ultrafast lattice dynamics and thermal diffuse scattering maps in a bulk material (silicon). These results open new opportunities for quantitative studies of nonequilibrium physics in materials.
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Submitted 17 December, 2024;
originally announced December 2024.
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Adaptive Time Stepping for the Two-Time Integro-Differential Kadanoff-Baym Equations
Authors:
Thomas Blommel,
David J. Gardner,
Carol S. Woodward,
Emanuel Gull
Abstract:
The non-equilibrium Green's function gives access to one-body observables for quantum systems. Of particular interest are quantities such as density, currents, and absorption spectra which are important for interpreting experimental results in quantum transport and spectroscopy. We present an integration scheme for the Green's function's equations of motion, the Kadanoff-Baym equations (KBE), whic…
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The non-equilibrium Green's function gives access to one-body observables for quantum systems. Of particular interest are quantities such as density, currents, and absorption spectra which are important for interpreting experimental results in quantum transport and spectroscopy. We present an integration scheme for the Green's function's equations of motion, the Kadanoff-Baym equations (KBE), which is both adaptive in the time integrator step size and method order as well as the history integration order. We analyze the importance of solving the KBE self-consistently and show that adapting the order of history integral evaluation is important for obtaining accurate results. To examine the efficiency of our method, we compare runtimes to a state of the art fixed time step integrator for several test systems and show an order of magnitude speedup at similar levels of accuracy.
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Submitted 30 April, 2025; v1 submitted 14 May, 2024;
originally announced May 2024.
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High resolution time- and angle-resolved photoemission spectroscopy with 11 eV laser pulses
Authors:
Changmin Lee,
Timm Rohwer,
Edbert J. Sie,
Alfred Zong,
Edoardo Baldini,
Joshua Straquadine,
Philip Walmsley,
Dillon Gardner,
Young S. Lee,
Ian R. Fisher,
Nuh Gedik
Abstract:
Performing time and angle resolved photoemission spectroscopy (tr-ARPES) at high momenta necessitates extreme ultraviolet laser pulses, which are typically produced via high harmonic generation (HHG). Despite recent advances, HHG-based setups still require large pulse energies (hundreds of $μ$J to mJ) and their energy resolution is limited to tens of meV. Here, we present a novel 11 eV tr-ARPES se…
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Performing time and angle resolved photoemission spectroscopy (tr-ARPES) at high momenta necessitates extreme ultraviolet laser pulses, which are typically produced via high harmonic generation (HHG). Despite recent advances, HHG-based setups still require large pulse energies (hundreds of $μ$J to mJ) and their energy resolution is limited to tens of meV. Here, we present a novel 11 eV tr-ARPES setup that generates a flux of $5\times10^{10}$ photons/s and achieves an unprecedented energy resolution of 16 meV. It can be operated at high repetition rates (up to 250 kHz) while using input pulse energies down to 3 $μ$J. We demonstrate these unique capabilities by simultaneously capturing the energy and momentum resolved dynamics in two well-separated momentum space regions of a charge density wave material ErTe$_3$. This novel setup offers opportunity to study the non-equilibrium band structure of solids with exceptional energy and time resolutions at high repetition rates.
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Submitted 30 October, 2019;
originally announced October 2019.
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Unexpected Zero Bias Conductance Peak on the Topological Semimetal Sb(111) with a Broken Bilayer
Authors:
Yau-Chuen Yam,
Shiang Fang,
Pengcheng Chen,
Yang He,
Anjan Soumyanarayanan,
Mohammad Hamidian,
Dillon Gardner,
Young Lee,
Marcel Franz,
Bertrand I. Halperin,
Efthimios Kaxiras,
Jennifer E. Hoffman
Abstract:
The long-sought Majorana fermion is expected to manifest in a topological-superconductor heterostructure as a zero bias conductance peak (ZBCP). As one promising platform for such heterostructures, we investigate the cleaved surface of the topological semimetal Sb(111) using scanning tunneling microscopy and spectroscopy. Remarkably, we find a robust ZBCP on some terraces of the cleaved surface, a…
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The long-sought Majorana fermion is expected to manifest in a topological-superconductor heterostructure as a zero bias conductance peak (ZBCP). As one promising platform for such heterostructures, we investigate the cleaved surface of the topological semimetal Sb(111) using scanning tunneling microscopy and spectroscopy. Remarkably, we find a robust ZBCP on some terraces of the cleaved surface, although no superconductor is present. Using quasiparticle interference imaging, Landau level spectroscopy and density functional theory, we show that the ZBCP originates from a van Hove singularity pushed up to the Fermi level by a sub-surface stacking fault. Amidst the sprint to stake claims on new Majorana fermion systems, our finding highlights the importance of using a local probe together with detailed modeling to check thoroughly for crystal imperfections that may give rise to a trivial ZBCP unrelated to Majorana physics.
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Submitted 31 October, 2018;
originally announced October 2018.
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Inelastic x-ray scattering measurements on URu2Si2
Authors:
D. R. Gardner,
C. J. Bonnoit,
R. Chisnell,
T. J. Williams,
G. M. Luke,
Y. S. Lee
Abstract:
We report high-resolution inelastic x ray scattering measurements of the acoustic phonons of URu2Si2. We observe minimal change in the phonon structure upon entering the Hidden Order phase. At all temperatures, the longitudinal acoustic phonons are anomalously broad at low q. There is no evidence to suggest that the increase in thermal conductivity in the Hidden Order phase is driven by a change i…
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We report high-resolution inelastic x ray scattering measurements of the acoustic phonons of URu2Si2. We observe minimal change in the phonon structure upon entering the Hidden Order phase. At all temperatures, the longitudinal acoustic phonons are anomalously broad at low q. There is no evidence to suggest that the increase in thermal conductivity in the Hidden Order phase is driven by a change in phonon dispersions or lifetimes. A more likely explanation is that the magnetic excitations in the Hidden Order state contribute to thermal transport.
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Submitted 29 December, 2015;
originally announced December 2015.
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Selective scattering between Floquet-Bloch and Volkov states in a topological insulator
Authors:
Fahad Mahmood,
Ching-Kit Chan,
Zhanybek Alpichshev,
Dillon Gardner,
Young Lee,
Patrick A. Lee,
Nuh Gedik
Abstract:
The coherent optical manipulation of solids is emerging as a promising way to engineer novel quantum states of matter. The strong time periodic potential of intense laser light can be used to generate hybrid photon-electron states. Interaction of light with Bloch states leads to Floquet-Bloch states which are essential in realizing new photo-induced quantum phases. Similarly, dressing of free elec…
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The coherent optical manipulation of solids is emerging as a promising way to engineer novel quantum states of matter. The strong time periodic potential of intense laser light can be used to generate hybrid photon-electron states. Interaction of light with Bloch states leads to Floquet-Bloch states which are essential in realizing new photo-induced quantum phases. Similarly, dressing of free electron states near the surface of a solid generates Volkov states which are used to study non-linear optics in atoms and semiconductors. The interaction of these two dynamic states with each other remains an open experimental problem. Here we use Time and Angle Resolved Photoemission Spectroscopy (Tr-ARPES) to selectively study the transition between these two states on the surface of the topological insulator Bi2Se3. We find that the coupling between the two strongly depends on the electron momentum, providing a route to enhance or inhibit it. Moreover, by controlling the light polarization we can negate Volkov states in order to generate pure Floquet-Bloch states. This work establishes a systematic path for the coherent manipulation of solids via light-matter interaction.
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Submitted 17 December, 2015;
originally announced December 2015.
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Imaging the Nanoscale Band Structure of Topological Sb
Authors:
Anjan Soumyanarayanan,
Michael M. Yee,
Yang He,
Hsin Lin,
Dillon R. Gardner,
Arun Bansil,
Young S. Lee,
Jennifer E. Hoffman
Abstract:
Many promising building blocks of future electronic technology - including non-stoichiometric compounds, strongly correlated oxides, and strained or patterned films - are inhomogeneous on the nanometer length scale. Exploiting the inhomogeneity of such materials to design next-generation nanodevices requires a band structure probe with nanoscale spatial resolution. To address this demand, we repor…
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Many promising building blocks of future electronic technology - including non-stoichiometric compounds, strongly correlated oxides, and strained or patterned films - are inhomogeneous on the nanometer length scale. Exploiting the inhomogeneity of such materials to design next-generation nanodevices requires a band structure probe with nanoscale spatial resolution. To address this demand, we report the first simultaneous observation and quantitative reconciliation of two candidate probes - Landau level spectroscopy and quasiparticle interference imaging - which we employ here to reconstruct the multi-component surface state band structure of the topological semimetal antimony(Sb). We thus establish the technique of band structure tunneling microscopy (BSTM), whose unique advantages include nanoscale access to non-rigid band structure deformation, empty state dispersion, and magnetic field dependent states. We use BSTM to elucidate the relationship between bulk conductivity and surface state robustness in topological materials, and to quantify essential metrics for spintronics applications.
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Submitted 7 November, 2013;
originally announced November 2013.
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Measurement of intrinsic Dirac fermion cooling on the surface of a topological insulator Bi$_2$Se$_3$ using time- and angle-resolved photoemission spectroscopy
Authors:
Y. H. Wang,
D. Hsieh,
E. J. Sie,
H. Steinberg,
D. R. Gardner,
Y. S. Lee,
P. Jarillo-Herrero,
N. Gedik
Abstract:
We perform time- and angle-resolved photoemission spectroscopy of a prototypical topological insulator Bi$_2$Se$_3$ to study the ultrafast dynamics of surface and bulk electrons after photo-excitation. By analyzing the evolution of surface states and bulk band spectra, we obtain their electronic temperature and chemical potential relaxation dynamics separately. These dynamics reveal strong phonon-…
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We perform time- and angle-resolved photoemission spectroscopy of a prototypical topological insulator Bi$_2$Se$_3$ to study the ultrafast dynamics of surface and bulk electrons after photo-excitation. By analyzing the evolution of surface states and bulk band spectra, we obtain their electronic temperature and chemical potential relaxation dynamics separately. These dynamics reveal strong phonon-assisted surface-bulk coupling at high lattice temperature and total suppression of inelastic scattering between the surface and the bulk at low lattice temperature. In this low temperature regime, the unique cooling of Dirac fermions in TI by acoustic phonons is manifested through a power law dependence of the surface temperature decay rate on carrier density.
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Submitted 23 August, 2012;
originally announced August 2012.
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Spin Configuration and Scattering Rates on the Heavily Electron-doped Surface of Topological Insulator Bi$_2$Se$_3$
Authors:
Z. -H. Pan,
E. Vescovo,
A. V. Fedorov,
B. Sinkovic,
D. Gardner,
S. Chu,
Y. S. Lee,
G. D. Gu,
T. Valla
Abstract:
Heavily electron-doped surfaces of Bi$_2$Se$_3$ have been studied by spin and angle resolved photoemission spectroscopy. Upon doping, electrons occupy a series of {\bf k}-split pairs of states above the topological surface state. The {\bf k}-splitting originates from the large spin-orbit coupling and results in a Rashba-type behavior, unequivocally demonstrated here via the spin analysis. The spin…
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Heavily electron-doped surfaces of Bi$_2$Se$_3$ have been studied by spin and angle resolved photoemission spectroscopy. Upon doping, electrons occupy a series of {\bf k}-split pairs of states above the topological surface state. The {\bf k}-splitting originates from the large spin-orbit coupling and results in a Rashba-type behavior, unequivocally demonstrated here via the spin analysis. The spin helicities of the lowest laying Rashba doublet and the adjacent topological surface state alternate in a left-right-left sequence. This spin configuration sets constraints to inter-band scattering channels opened by electron doping. A detailed analysis of the scattering rates suggests that intra-band scattering dominates with the largest effect coming from warping of the Fermi surface.
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Submitted 23 April, 2012;
originally announced April 2012.
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Probing electronic order via coupling to low energy phonons in superconducting Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$
Authors:
C. J. Bonnoit,
D. R. Gardner,
R. Chisnell,
A. H. Said,
Y. Okada,
T. Kondo,
T. Takeuchi,
H. Ikuta,
D. E. Moncton,
Y. S. Lee
Abstract:
We report high-resolution inelastic x-ray scattering measurements of the acoustic phonons in the single-layer cuprate $Bi_{2}Sr_{2-x)La_{x}CuO_{6+δ}$. These measurements reveal anomalous broadening of the longitudinal acoustic phonon near the (1/4,1/4,0) wavevector. The observed wavevector and its doping dependence indicate the coupling of the phonons to an underlying electronic density wave state…
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We report high-resolution inelastic x-ray scattering measurements of the acoustic phonons in the single-layer cuprate $Bi_{2}Sr_{2-x)La_{x}CuO_{6+δ}$. These measurements reveal anomalous broadening of the longitudinal acoustic phonon near the (1/4,1/4,0) wavevector. The observed wavevector and its doping dependence indicate the coupling of the phonons to an underlying electronic density wave state. In addition, a comparison of the scattered intensities for x-ray energy-gain and x-ray energy-loss indicates that both time-reversal and inversion symmetries are broken in the material. Upon cooling, the effects of symmetry breaking are enhanced in the pseudogap state.
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Submitted 22 February, 2012;
originally announced February 2012.
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Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi$_2$Se$_3$ Using Angle-Resolved Photoemission Spectroscopy
Authors:
Z. -H. Pan,
A. V. Fedorov,
D. Gardner,
Y. S. Lee,
S. Chu,
T. Valla
Abstract:
Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the s…
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Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the surface of a model topological insulator, Bi$_2$Se$_3$, by high resolution angle-resolved photoemission spectroscopy. We found an extremely weak broadening of the topological surface state with temperature and no anomalies in the state's dispersion, indicating exceptionally weak electron-phonon coupling. Our results demonstrate that the topological surface state is protected not only from elastic scattering on impurities, but also from scattering on low-energy phonons, suggesting that topological insulators could serve as a basis for room temperature electronic devices.
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Submitted 8 January, 2013; v1 submitted 16 September, 2011;
originally announced September 2011.
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Selective probing of photo-induced charge and spin dynamics in the bulk and surface of a topological insulator
Authors:
D. Hsieh,
F. Mahmood,
J. W. McIver,
D. R. Gardner,
Y. S. Lee,
N. Gedik
Abstract:
Topological insulators possess completely different spin-orbit coupled bulk and surface electronic spectra that are each predicted to exhibit exotic responses to light. Here we report time-resolved fundamental and second harmonic optical pump-probe measurements on the topological insulator Bi2Se3 to independently measure its photo-induced charge and spin dynamics with bulk and surface selectivity.…
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Topological insulators possess completely different spin-orbit coupled bulk and surface electronic spectra that are each predicted to exhibit exotic responses to light. Here we report time-resolved fundamental and second harmonic optical pump-probe measurements on the topological insulator Bi2Se3 to independently measure its photo-induced charge and spin dynamics with bulk and surface selectivity. Our results show that a transient net spin density can be optically induced in both the bulk and surface, which may drive spin transport in topological insulators. By utilizing a novel rotational anisotropy analysis we are able to separately resolve the spin de-polarization, intraband cooling and interband recombination processes following photo-excitation, which reveal that spin and charge degrees of freedom relax on very different time scales owing to strong spin-orbit coupling.
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Submitted 8 August, 2011;
originally announced August 2011.
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Photoemission Spectroscopy of Magnetic and Non-magnetic Impurities on the Surface of the Bi$_2$Se$_3$ Topological Insulator
Authors:
T. Valla,
Z. -H. Pan,
D. R. Gardner,
Y. S. Lee,
S. Chu
Abstract:
Dirac-like surface states on surfaces of topological insulators have a chiral spin structure that suppresses back-scattering and protects the coherence of these states in the presence of non-magnetic scatterers. In contrast, magnetic scatterers should open the back- scattering channel via the spin-flip processes and degrade the state's coherence. We present angle-resolved photoemission spectroscop…
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Dirac-like surface states on surfaces of topological insulators have a chiral spin structure that suppresses back-scattering and protects the coherence of these states in the presence of non-magnetic scatterers. In contrast, magnetic scatterers should open the back- scattering channel via the spin-flip processes and degrade the state's coherence. We present angle-resolved photoemission spectroscopy studies of the electronic structure and the scattering rates upon adsorption of various magnetic and non-magnetic impurities on the surface of Bi$_2$Se$_3$, a model topological insulator. We reveal a remarkable insensitivity of the topological surface state to both non-magnetic and magnetic impurities in the low impurity concentration regime. Scattering channels open up with the emergence of hexagonal warping in the high-doping regime, irrespective of the impurity's magnetic moment.
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Submitted 12 March, 2012; v1 submitted 5 April, 2011;
originally announced April 2011.
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Observation of a warped helical spin-texture in Bi$_2$Se$_3$ from circular dichroism angle-resolved photoemission spectroscopy
Authors:
Y. H. Wang,
D. Hsieh,
D. Pilon,
L. Fu,
D. R. Gardner,
Y. S. Lee,
N. Gedik
Abstract:
A differential coupling of topological surface states to left- versus right-circularly polarized light is the basis of many opto-spintronics applications of topological insulators. Here we report direct evidence of circular dichroism from the surface states of Bi$_2$Se$_3$ using a laser-based time-of-flight angle-resolved photoemission spectroscopy. By employing a novel sample rotational analysis,…
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A differential coupling of topological surface states to left- versus right-circularly polarized light is the basis of many opto-spintronics applications of topological insulators. Here we report direct evidence of circular dichroism from the surface states of Bi$_2$Se$_3$ using a laser-based time-of-flight angle-resolved photoemission spectroscopy. By employing a novel sample rotational analysis, we resolve unusual modulations in the circular dichroism photoemission pattern as a function of both energy and momentum, which perfectly mimic the predicted but hitherto un-observed three-dimensional warped spin-texture of the surface states. By developing a microscopic theory of photoemission from topological surface states, we show that this correlation is a natural consequence of spin-orbit coupling. These results suggest that our technique may be a powerful probe of the spin-texture of spin-orbit coupled materials in general.
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Submitted 12 November, 2011; v1 submitted 28 January, 2011;
originally announced January 2011.
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Electronic Structure of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarization
Authors:
Z. -H. Pan,
E. Vescovo,
A. V. Fedorov,
D. Gardner,
Y. S. Lee,
S. Chu,
G. D. Gu,
T. Valla
Abstract:
We performed high-resolution spin- and angle-resolved photoemission spectroscopy studies of the electronic structure and the spin texture on the surface of Bi$_2$Se$_3$, a model topological insulator. By tuning the photon energy, we found that the topological surface state is well separated from the bulk states in the vicinity of $k_z=Z$ plane of the bulk Brillouin zone. The spin-resolved measurem…
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We performed high-resolution spin- and angle-resolved photoemission spectroscopy studies of the electronic structure and the spin texture on the surface of Bi$_2$Se$_3$, a model topological insulator. By tuning the photon energy, we found that the topological surface state is well separated from the bulk states in the vicinity of $k_z=Z$ plane of the bulk Brillouin zone. The spin-resolved measurements in that region indicate a very high degree of spin polarization of the surface state, $\sim 0.75$, much higher than previously reported. Our results demonstrate that the topological surface state on Bi$_2$Se$_3$ is highly spin polarized and that the dominant factors limiting the polarization are mainly extrinsic.
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Submitted 27 September, 2011; v1 submitted 28 January, 2011;
originally announced January 2011.
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Nonlinear optical probe of tunable surface electrons on a topological insulator
Authors:
D. Hsieh,
J. W. McIver,
D. H. Torchinsky,
D. R. Gardner,
Y. S. Lee,
N. Gedik
Abstract:
We use ultrafast laser pulses to experimentally demonstrate that the second-order optical response of bulk single crystals of the topological insulator Bi$_2$Se$_3$ is sensitive to its surface electrons. By performing surface doping dependence measurements as a function of photon polarization and sample orientation we show that second harmonic generation can simultaneously probe both the surface c…
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We use ultrafast laser pulses to experimentally demonstrate that the second-order optical response of bulk single crystals of the topological insulator Bi$_2$Se$_3$ is sensitive to its surface electrons. By performing surface doping dependence measurements as a function of photon polarization and sample orientation we show that second harmonic generation can simultaneously probe both the surface crystalline structure and the surface charge of Bi$_2$Se$_3$. Furthermore, we find that second harmonic generation using circularly polarized photons reveals the time-reversal symmetry properties of the system and is surprisingly robust against surface charging, which makes it a promising tool for spectroscopic studies of topological surfaces and buried interfaces.
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Submitted 7 January, 2011;
originally announced January 2011.
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Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
Authors:
Hadar Steinberg,
Dillon R. Gardner,
Young S. Lee,
Pablo Jarillo-Herrero
Abstract:
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transport measurements on thin (<100 nm) Bi2Se3 devices and show that the density of the surface states can be modulated via the e…
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Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transport measurements on thin (<100 nm) Bi2Se3 devices and show that the density of the surface states can be modulated via the electric field effect by using a top-gate with a high-k dielectric insulator. The conductance dependence on geometry, gate voltage, and temperature all indicate that transport is governed by parallel surface and bulk contributions. Moreover, the conductance dependence on top-gate voltage is ambipolar, consistent with tuning between electrons and hole carriers at the surface.
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Submitted 13 December, 2010;
originally announced December 2010.
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Ambipolar Electric Field Effect in Metallic Bi2Se3
Authors:
Hadar Steinberg,
Dillon R. Gardner,
Young S. Lee,
Pablo Jarillo-Herrero
Abstract:
Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of physical phenomena such as anomalous magneto-electric coupling and Majorana excitations. Although TI surface states have been detected in Bi-based compounds by AR…
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Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of physical phenomena such as anomalous magneto-electric coupling and Majorana excitations. Although TI surface states have been detected in Bi-based compounds by ARPES and STM techniques, electrical control over their density, required for most transport experiments, remains a challenge. Existing materials are heavily doped in the bulk, thus preventing electrical tunability of the surface states and their integration into topological quantum electronic devices. Here we show that electronic transport in metallic Bi2Se3 nanoscale devices can be controlled by tuning the surface density via the electric field effect. By choosing an appropriate high-k dielectric, we are able to shift the Fermi energy through the charge neutrality point of the surface states, resulting in ambipolar transport characteristics reminiscent of those observed in graphene. Combining magnetotransport, field effect, and geometry dependent experiments, we provide transport measurements of the surface state mobility, and identify likely scattering mechanisms by measuring its temperature dependence.
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Submitted 12 September, 2010; v1 submitted 16 March, 2010;
originally announced March 2010.
