-
Sustainable wafer-scale integration of epitaxial ZnO on silicon for piezoelectric devices
Authors:
D. Sanchez-Fuentes,
R. Desgarceaux,
A. Rahal,
L. Garcia,
S. Bousri,
S. Ding,
N. Camara,
F. Pascal,
R. Garcia-Bermejo,
N. Guillaume,
G. Ardila,
J. Gazquez,
C. Magen,
S Plana-Ruiz,
C. Guasch,
A. Carretero-Genevrier
Abstract:
To sustainably support the ongoing energetic transition, we need functional metal oxides capable of converting energy, and produce storage, and sensing devices. However, these materials suffer from a high economic cost of manufacturing, and their production in a sustainable way is, to date, a milestone. Additionally, the technical challenges, such as scalability and integration of silicon for indu…
▽ More
To sustainably support the ongoing energetic transition, we need functional metal oxides capable of converting energy, and produce storage, and sensing devices. However, these materials suffer from a high economic cost of manufacturing, and their production in a sustainable way is, to date, a milestone. Additionally, the technical challenges, such as scalability and integration of silicon for industrial processing using microelectronic technologies, impose strict conditions for the entire materials process. In this work, we engineer α-quartz virtual substrates up to 4 inches facilitating the large-scale and sustainable integration of multifunctional epitaxial ZnO metal oxide microwire films on silicon. These materials are exclusively manufactured on silicon using solution chemistry, providing single-chip solutions that can meet strict economic constraints for developing sustainable devices at a lower cost. Through this integrative technology, we demonstrate the microfabrication of epitaxial (110)ZnO/(100)α-quartz/(100)silicon piezoelectric membrane resonators at the wafer-scale with potential applications in energy conversion and sensing. We combined four dimensional (4D)-STEM diffraction technology and Piezoelectric Force Microscopy (PFM) to establish a correlation between out of plane crystalline strain and piezoelectric response in epitaxial (110) ZnO at the microscale. Finally, we proved the fabrication of 800 nm thick (110) ZnO suspended membranes that can be transferred to flexible substrates, making them suitable for flexible devices.
△ Less
Submitted 18 March, 2025;
originally announced March 2025.
-
Soft chemistry assisted On-chip Integration of Nanostructured quartz-based Piezoelectric Microelectromechanical System
Authors:
Claire Jolly,
Andres Gomez,
David Sanchez-Fuentes,
Dilek Cakiroglu,
Raissa Rathar,
Nicolas Maurin,
Ricardo Garcia-Bermejo,
Benoit Charlot,
Marti Gich,
Michael Bahriz,
Laura Picas,
Adrian Carretero-Genevrier
Abstract:
The development of advanced piezoelectric quartz MEMS for sensing and precise frequency control applications requires the nanostructuration and on chip integration on silicon of this material. However, the current quartz manufacturing methods are based on bonding bulk micromachined crystals on silicon, which limits the size, the performance, the integration cost and the scalability of quartz micro…
▽ More
The development of advanced piezoelectric quartz MEMS for sensing and precise frequency control applications requires the nanostructuration and on chip integration on silicon of this material. However, the current quartz manufacturing methods are based on bonding bulk micromachined crystals on silicon, which limits the size, the performance, the integration cost and the scalability of quartz micro devices. Here, we combine chemical solution deposition, soft nanoimprint lithography and top down microfabrication processes to develop the first nanostructured epitaxial 100 quartz 100 Si piezoelectric cantilevers. The coherent Si quartz interface and film thinness combined with a controlled nanostructuration on silicon insulator silicon technology substrates provides high force and mass sensitivity while preserving the mechanical quality factor of the microelectromechanical systems. This work proves that biocompatible nanostructured epitaxial piezoelectric quartz based MEMS on silicon can be engineered at low cost by combining soft chemistry and top down lithographic techniques.
△ Less
Submitted 15 July, 2020;
originally announced July 2020.
-
Crystal Engineering and Ferroelectricity at the Nanoscale in Epitaxial 1D Manganese Oxide on Silicon
Authors:
Andrés Gomez,
José Manuel Vila-Fungueiriño,
Claire Jolly,
Ricardo Garcia-Bermejo,
Judith Oró-Solé,
Etienne Ferain,
Narcís Mestres,
César Magén,
Jaume Gazquez,
Juan Rodriguez-Carvajal,
Adrián Carretero-Genevrier
Abstract:
Ferroelectric oxides have attracted much attention due to their wide range of applications, especially in electronic devices such as nonvolatile memories and tunnel junctions. As a result, the monolithic integration of these materials into silicon technology and its nanostructuration to develop alternative cost-effective processes are among the central points in current technology. In this work, w…
▽ More
Ferroelectric oxides have attracted much attention due to their wide range of applications, especially in electronic devices such as nonvolatile memories and tunnel junctions. As a result, the monolithic integration of these materials into silicon technology and its nanostructuration to develop alternative cost-effective processes are among the central points in current technology. In this work, we used a chemical route to obtain nanowire thin films of a novel Sr1+δMn8O16 (SMO) hollandite-type manganese oxide on silicon. Scanning transmission electron microscopy combined with crystallographic computing reveals a crystal structure comprising hollandite and pyrolusite units sharing the edges of their MnO6 octahedra, resulting in three types of tunnels arranged along the c axis, where ordering of the Sr atoms produces a natural symmetry breaking. The novel structure gives rise to a ferroelectricity and piezoelectricity, as revealed by local Direct Piezoelectric Force Microscopy measurements, which confirmed the ferroelectric nature of SMO nanowire thin films at room temperature and showed a piezoelectric coefficient d33 value of 22,6 pC/N. Moreover, we proved that flexible vertical SMO nanowires can be harvested and converted into electric output energy through the piezoelectric effect, showing an excellent deformability and high interface recombination. This work indicates the possibility of engineering the integration of 1D manganese oxides on silicon, a step which precedes the production of microelectronic devices.
△ Less
Submitted 31 December, 2020; v1 submitted 7 July, 2020;
originally announced July 2020.
