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Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
Authors:
A. G. Taboada,
A. M. Sánchez,
A. M. Beltrán,
M. Bozkurt,
D. Alonso-Álvarez,
B. Alén,
A. Rivera,
J. M. Ripalda,
J. M. Llorens,
J. Martín-Sánchez,
Y. González,
J. M. Ulloa,
J. M. García,
S. I. Molina,
P. M. Koenraad
Abstract:
We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum…
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We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 microns accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.
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Submitted 23 January, 2025;
originally announced January 2025.
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Ordered InAs quantum dots on pre-patterned GaAs (0 0 1) by local oxidation nanolithography
Authors:
J. Martín-Sánchez,
Y. González,
L. González,
M. Tello,
R. García,
D. Granados,
J. M. García,
F. Briones
Abstract:
Ordered InAs quantum dot (QD) arrays have been obtained on pre-patterned GaAs (0 0 1) substrates by atomic force microscopy (AFM) local oxidation nanolithography. Prior to InAs molecular beam epitaxy (MBE) deposition, an ordered square array of nanoholes is formed at the GaAs pre-patterned surface following in situ etching with atomic hydrogen. A low substrate temperature is maintained during the…
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Ordered InAs quantum dot (QD) arrays have been obtained on pre-patterned GaAs (0 0 1) substrates by atomic force microscopy (AFM) local oxidation nanolithography. Prior to InAs molecular beam epitaxy (MBE) deposition, an ordered square array of nanoholes is formed at the GaAs pre-patterned surface following in situ etching with atomic hydrogen. A low substrate temperature is maintained during the whole process in order to avoid pattern smoothing. Our results show that the density and dimensions of the nanoholes on the GaAs surface determine InAs QD size, nucleation site and InAs dose necessary for their formation. As a function of the geometrical parameters of the nanohole array, we can obtain either ordered 2D arrays of separated QD, closely packed QD or localized areas for QD formation.
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Submitted 18 January, 2025;
originally announced January 2025.
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Photonic and phononic modes in acoustoplasmonic toroidal nanopropellers
Authors:
Beatriz Castillo López de Larrinzar,
Jorge M. García,
Norberto Daniel Lanzillotti-Kimura,
Antonio García-Martín
Abstract:
Non-conventional resonances, both acoustic and photonic, are found in metallic particles with a toroidal nanopropeller geometry that is generated by sweeping a three-lobed 2D-shape along a spiral with twisting angle, $α$. For both optical and acoustic cases, spectral location of resonances experiences a red-shift as a function of $α$. We demonstrate that the optical case can be understood as a nat…
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Non-conventional resonances, both acoustic and photonic, are found in metallic particles with a toroidal nanopropeller geometry that is generated by sweeping a three-lobed 2D-shape along a spiral with twisting angle, $α$. For both optical and acoustic cases, spectral location of resonances experiences a red-shift as a function of $α$. We demonstrate that the optical case can be understood as a natural evolution of resonances as the spiral length of the toroidal nanopropeller increases with $α$, implying a huge helicity dependent absorption cross section. In the case of acoustic response, two red-shifting breathing modes are identified. Additionally, even small $α$ allows the appearance of new low-frequency resonances, whose spectral dispersion depends on a competition between length of the generative spiral and the pitch of the toroidal nanopropeller.
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Submitted 20 June, 2024;
originally announced June 2024.
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Interaction of surfactant and protein at the o/w interface and its effect on colloidal and biological properties of polymeric nanocarriers
Authors:
Teresa Del Castillo-Santaella,
Jose Manuel Peula Garcia,
Julia Maldonado-Valderrama,
Ana Belen Jodar-Reyes
Abstract:
The use of polymer-based surfactants in the double-emulsion (water/oil/water, W/O/W) solvent-evaporation technique is becoming a widespread strategy for preparing biocompatible and biodegradable polymeric nanoparticles (NPs) loaded with biomolecules of interest in biomedicine, or biotechnology. This approach enhances the stability of the NPs, reduces their size and recognition by the mononuclear p…
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The use of polymer-based surfactants in the double-emulsion (water/oil/water, W/O/W) solvent-evaporation technique is becoming a widespread strategy for preparing biocompatible and biodegradable polymeric nanoparticles (NPs) loaded with biomolecules of interest in biomedicine, or biotechnology. This approach enhances the stability of the NPs, reduces their size and recognition by the mononuclear phagocytic system, and protects the encapsulated biomolecule against losing biological activity. Different protocols to add the surfactant during the synthesis lead to different NP colloidal properties and biological activity.
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Submitted 18 January, 2024;
originally announced January 2024.
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In situ AFM Observations of Li-Oxygen Electrochemical Reactions
Authors:
Hariharan Katharajan,
Kumar Virwani,
A. David Erpelding,
Jeannette M. Garcia
Abstract:
The morphologies of crystalline lithium peroxide (Li2O2) discharge products in Li-O2 batteries have been shown to exhibit a dependency on subtle variations within the battery cell-operating environment including exposure to ambient air, moisture, or additives. As a result, imaging battery discharge products in real time under carefully controlled environmental conditions is a challenging obstacle…
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The morphologies of crystalline lithium peroxide (Li2O2) discharge products in Li-O2 batteries have been shown to exhibit a dependency on subtle variations within the battery cell-operating environment including exposure to ambient air, moisture, or additives. As a result, imaging battery discharge products in real time under carefully controlled environmental conditions is a challenging obstacle for complete mechanistic understanding of Li2O2 growth and deposition during discharge in metal-air batteries. Here, we report the design of a completely enclosed cell for high-resolution in situ AFM imaging of Li-O2 battery discharge products. The air-and moisture-free electrochemical cell environment enabled the observation of different product morphologies during AFM imaging when LiTFSI in oxygen-saturated tetraethylene glycol dimethyl ether (tetraglyme) solvent was employed. This in situ AFM cell development brings complimentary information to various proposed mechanisms for lithium oxygen reaction.
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Submitted 20 June, 2016;
originally announced June 2016.
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On the Origin and Implications of Li$_2$O$_2$ Toroid Formation in Nonaqueous Li-O$_2$ Batteries
Authors:
Nagaphani B. Aetukuri,
Bryan D. McCloskey,
Jeannette M. García,
Leslie E. Krupp,
Venkatasubramanian Viswanathan,
Alan C. Luntz
Abstract:
The lithium-air (Li-O$_2$) battery has received enormous attention as a possible alternative to current state-of-the-art rechargeable Li-ion batteries given their high theoretical specific energy. However, the maximum discharge capacity in nonaqueous Li-O$_2$ batteries is limited to a small fraction of its theoretical value due to the insulating nature of lithium peroxide, Li$_2$O$_2$, the battery…
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The lithium-air (Li-O$_2$) battery has received enormous attention as a possible alternative to current state-of-the-art rechargeable Li-ion batteries given their high theoretical specific energy. However, the maximum discharge capacity in nonaqueous Li-O$_2$ batteries is limited to a small fraction of its theoretical value due to the insulating nature of lithium peroxide, Li$_2$O$_2$, the battery$'$s primary discharge product. In this work, we show that the inclusion of trace amounts of electrolyte additives, such as H$_2$O, significantly improve the capacity of the Li-O$_2$ battery. These additives trigger a solution-based growth mechanism due to their solvating properties, thereby circumventing the Li$_2$O$_2$ conductivity limitation. Experimental observations and a growth model imply that this solution mechanism is responsible for Li$_2$ toroid formation. We present a general formalism describing an additive$'$s tendency to trigger the solution process, providing a rational design route for electrolytes that afford larger Li-air battery capacities.
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Submitted 12 June, 2014;
originally announced June 2014.
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Graphene growth on h-BN by Molecular Beam Epitaxy
Authors:
Jorge M. Garcia,
Ulrich Wurstbauer,
Antonio Levy,
Loren N. Pfeiffer,
Aron Pinczuk,
Annette S. Plaut,
Lei Wang,
Cory R. Dean,
Roberto Buizza,
Arend M. Van Der Zande,
James Hone,
Kenji Watanabe,
Takashi Taniguchi
Abstract:
The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN…
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The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.
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Submitted 22 April, 2012; v1 submitted 11 April, 2012;
originally announced April 2012.
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Molecular beam growth of graphene nanocrystals on dielectric substrates
Authors:
Ulrich Wurstbauer,
Theanne Schiros,
Cherno Jaye,
Annette S. Plaut,
Rui He,
Albert Rigosi,
Christopher Gutiérrez,
Daniel Fischer,
Loren N. Pfeiffer,
Abhay N. Pasupathy,
Aron Pinczuk,
Jorge M. García
Abstract:
We demonstrate the growth of graphene nanocrystals by molecular beam methods that employ a solid carbon source, and that can be used on a diverse class of large area dielectric substrates. Characterization by Raman and Near Edge X-ray Absorption Fine Structure spectroscopies reveal a sp2 hybridized hexagonal carbon lattice in the nanocrystals. Lower growth rates favor the formation of higher quali…
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We demonstrate the growth of graphene nanocrystals by molecular beam methods that employ a solid carbon source, and that can be used on a diverse class of large area dielectric substrates. Characterization by Raman and Near Edge X-ray Absorption Fine Structure spectroscopies reveal a sp2 hybridized hexagonal carbon lattice in the nanocrystals. Lower growth rates favor the formation of higher quality, larger size multi-layer graphene crystallites on all investigated substrates. The surface morphology is determined by the roughness of the underlying substrate and graphitic monolayer steps are observed by ambient scanning tunneling microscopy.
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Submitted 18 June, 2012; v1 submitted 13 February, 2012;
originally announced February 2012.
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Microcavity-mediated Coupling of Two Distant Semiconductor Qubits
Authors:
E. Gallardo,
L. J. Martinez,
A. K. Nowak,
H. P. van der Meulen,
J. M. Calleja,
C. Tejedor,
I. Prieto,
D. Granados,
A. G. Taboada,
J. M. Garcia,
P. A. Postigo
Abstract:
Long distance (1.4 micron) interaction of two different InAs/GaAs quantum dots in a photonic crystal microcavity is observed. Resonant optical excitation in the p-state of any of the quantum dots, results in an increase of the s-state emission of both quantum dots and the cavity mode. The cavity-mediated coupling can be controlled by varying the excitation intensity. These results represent an e…
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Long distance (1.4 micron) interaction of two different InAs/GaAs quantum dots in a photonic crystal microcavity is observed. Resonant optical excitation in the p-state of any of the quantum dots, results in an increase of the s-state emission of both quantum dots and the cavity mode. The cavity-mediated coupling can be controlled by varying the excitation intensity. These results represent an experimental step towards the realization of quantum logic operations using distant solid state qubits.
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Submitted 8 August, 2009;
originally announced August 2009.
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Manipulating exciton fine-structure in quantum dots with a lateral electric field
Authors:
B. D. Gerardot,
S. Seidl,
P. A. Dalgarno,
R. J. Warburton,
D. Granados,
J. M. Garcia,
K. Kowalik,
O. Krebs,
K. Karrai,
A. Badolato,
P. M. Petroff
Abstract:
The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. We show that the lateral electric field strongly affects the exciton fine structure splitting due to active…
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The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. We show that the lateral electric field strongly affects the exciton fine structure splitting due to active manipulation of the single particle wave-functions. Remarkably, the splitting can be tuned over large values and through zero.
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Submitted 31 August, 2006;
originally announced August 2006.
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InAs/InP single quantum wire formation and emission at 1.5 microns
Authors:
B. Alén,
D. Fuster,
Y. González,
L. González,
J. Martínez-Pastor,
M. U. González,
J. M. García
Abstract:
Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wi…
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Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 microns. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process.
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Submitted 5 October, 2006; v1 submitted 6 June, 2006;
originally announced June 2006.
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Absorption and photoluminescence spectroscopy on a single self-assembled charge-tunable quantum dot
Authors:
S. Seidl,
M. Kroner,
P. A. Dalgarno,
A. Högele,
J. M. Smith,
M. Ediger,
B. D. Gerardot,
J. M. Garcia,
P. M. Petroff,
K. Karrai,
R. J. Warburton
Abstract:
We have performed detailed photoluminescence (PL) and absorption spectroscopy on the same single self-assembled quantum dot in a charge-tunable device. The transition from neutral to charged exciton in the PL occurs at a more negative voltage than the corresponding transition in absorption. We have developed a model of the Coulomb blockade to account for this observation. At large negative bias,…
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We have performed detailed photoluminescence (PL) and absorption spectroscopy on the same single self-assembled quantum dot in a charge-tunable device. The transition from neutral to charged exciton in the PL occurs at a more negative voltage than the corresponding transition in absorption. We have developed a model of the Coulomb blockade to account for this observation. At large negative bias, the absorption broadens as a result of electron and hole tunneling. We observe resonant features in this regime whenever the quantum dot hole level is resonant with two-dimensional hole states located at the capping layer-blocking barrier interface in our structure.
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Submitted 27 October, 2005;
originally announced October 2005.
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Absorbing-state phase transitions with extremal dynamics
Authors:
Ronald Dickman,
Guilherme J. M. Garcia
Abstract:
Extremal dynamics represents a path to self-organized criticality in which the order parameter is tuned to a value of zero. The order parameter is associated with a phase transition to an absorbing state. Given a process that exhibits a phase transition to an absorbing state, we define an ``extremal absorbing" process, providing the link to the associated extremal (nonabsorbing) process. Station…
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Extremal dynamics represents a path to self-organized criticality in which the order parameter is tuned to a value of zero. The order parameter is associated with a phase transition to an absorbing state. Given a process that exhibits a phase transition to an absorbing state, we define an ``extremal absorbing" process, providing the link to the associated extremal (nonabsorbing) process. Stationary properties of the latter correspond to those at the absorbing-state phase transition in the former. Studying the absorbing version of an extremal dynamics model allows to determine certain critical exponents that are not otherwise accessible. In the case of the Bak-Sneppen (BS) model, the absorbing version is closely related to the "$f$-avalanche" introduced by Paczuski, Maslov and Bak [Phys. Rev. E {\bf 53}, 414 (1996)], or, in spreading simulations to the "BS branching process" also studied by these authors. The corresponding nonextremal process belongs to the directed percolation universality class. We revisit the absorbing BS model, obtaining refined estimates for the threshold and critical exponents in one dimension. We also study an extremal version of the usual contact process, using mean-field theory and simulation. The extremal condition slows the spread of activity and modifies the critical behavior radically, defining an ``extremal directed percolation" universality class of absorbing-state phase transitions. Asymmetric updating is a relevant perturbation for this class, even though it is irrelevant for the corresponding nonextremal class.
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Submitted 11 October, 2004;
originally announced October 2004.
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Asymmetric dynamics and critical behavior in the Bak-Sneppen model
Authors:
Guilherme J. M. Garcia,
Ronald Dickman
Abstract:
We investigate, using mean-field theory and simulation, the effect of asymmetry on the critical behavior and probability density of Bak-Sneppen models. Two kinds of anisotropy are investigated: (i) different numbers of sites to the left and right of the central (minimum) site are updated and (ii) sites to the left and right of the central site are renewed in different ways. Of particular interes…
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We investigate, using mean-field theory and simulation, the effect of asymmetry on the critical behavior and probability density of Bak-Sneppen models. Two kinds of anisotropy are investigated: (i) different numbers of sites to the left and right of the central (minimum) site are updated and (ii) sites to the left and right of the central site are renewed in different ways. Of particular interest is the crossover from symmetric to asymmetric scaling for weakly asymmetric dynamics, and the collapse of data with different numbers of updated sites but the same degree of asymmetry. All non-symmetric rules studied fall, independent of the degree of asymmetry, in the same universality class. Conversely, symmetric variants reproduce the exponents of the original model. Our results confirm the existence of two symmetry-based universality classes for extremal dynamics.
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Submitted 7 August, 2004;
originally announced August 2004.
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On the thresholds, probability densities, and critical exponents of Bak-Sneppen-like models
Authors:
Guilherme J. M. Garcia,
Ronald Dickman
Abstract:
We report a simple method to accurately determine the threshold and the exponent $ν$ of the Bak-Sneppen model and also investigate the BS universality class. For the random-neighbor version of the BS model, we find the threshold $x^*=0.33332(3)$, in agreement with the exact result $x^*=1/3$ given by mean-field theory. For the one-dimensional original model, we find $x^*=0.6672(2)$ in good agreem…
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We report a simple method to accurately determine the threshold and the exponent $ν$ of the Bak-Sneppen model and also investigate the BS universality class. For the random-neighbor version of the BS model, we find the threshold $x^*=0.33332(3)$, in agreement with the exact result $x^*=1/3$ given by mean-field theory. For the one-dimensional original model, we find $x^*=0.6672(2)$ in good agreement with the results reported in the literature; for the anisotropic BS model we obtain $x^*=0.7240(1)$. We study the finite size effect $x^*(L)-x^*(L \to \infty) \propto L^{-ν}$, observed in a system with $L$ sites, and find $ν= 1.00(1)$ for the random-neighbor version, $ν= 1.40(1)$ for the original model, and $ν=1.58(1)$ for the anisotropic case. Finally, we discuss the effect of defining the extremal site as the one which minimizes a general function $f(x)$, instead of simply $f(x)=x$ as in the original updating rule. We emphasize that models with extremal dynamics have singular stationary probability distributions $p(x)$. Our simulations indicate the existence of two symmetry-based universality classes.
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Submitted 1 March, 2004;
originally announced March 2004.
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On singular probability densities generated by extremal dynamics
Authors:
Guilherme J. M. Garcia,
Ronald Dickman
Abstract:
Extremal dynamics is the mechanism that drives the Bak-Sneppen model into a (self-organized) critical state, marked by a singular stationary probability density $p(x)$. With the aim of understanding this phenomenon, we study the BS model and several variants via mean-field theory and simulation. In all cases, we find that $p(x)$ is singular at one or more points, as a consequence of extremal dyn…
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Extremal dynamics is the mechanism that drives the Bak-Sneppen model into a (self-organized) critical state, marked by a singular stationary probability density $p(x)$. With the aim of understanding this phenomenon, we study the BS model and several variants via mean-field theory and simulation. In all cases, we find that $p(x)$ is singular at one or more points, as a consequence of extremal dynamics. Furthermore we show that the extremal barrier $x_i$ always belongs to the `prohibited' interval, in which $p(x)=0$. Our simulations indicate that the Bak-Sneppen universality class is robust with regard to changes in the updating rule: we find the same value for the exponent $π$ for all variants. Mean-field theory, which furnishes an exact description for the model on a complete graph, reproduces the character of the probability distribution found in simulations. For the modified processes mean-field theory takes the form of a functional equation for $p(x)$.
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Submitted 1 March, 2004; v1 submitted 11 April, 2003;
originally announced April 2003.
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Magneto-optical properties of charged excitons in quantum dots
Authors:
A. O. Govorov,
C. Schulhauser,
D. Haft,
A. V. Kalameitsev,
A. Chaplik,
R. J. Warburton,
K. Karrai,
W. Schoenfeld,
J. M. Garcia,
P. M. Petroff
Abstract:
We present both experimental and theoretical results on the influence of a magnetic field on excitons in semiconductor quantum dots. We find a pronounced difference between the strong and weak confinement regimes. For weak confinement, the excitonic diamagnetic shift is strongly dependent on surplus charge, corresponding to a reversal in sign of the conventional diamagnetic shift for neutral exc…
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We present both experimental and theoretical results on the influence of a magnetic field on excitons in semiconductor quantum dots. We find a pronounced difference between the strong and weak confinement regimes. For weak confinement, the excitonic diamagnetic shift is strongly dependent on surplus charge, corresponding to a reversal in sign of the conventional diamagnetic shift for neutral excitons. In this limit, we argue that the optical properties of excitons with two or more extra electrons are fundamentally different to those of the neutral exciton and trion.
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Submitted 26 February, 2002;
originally announced February 2002.
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Spectroscopy of nanoscopic semiconductor rings
Authors:
A. Lorke,
R. J. Luyken,
A. O. Govorov,
J. P. Kotthaus,
J. M. Garcia,
P. M. Petroff
Abstract:
Making use of self-assembly techniques, we demonstrate the realization of nanoscopic semiconductor quantum rings in which the electronic states are in the true quantum limit. We employ two complementary spectroscopic techniques to investigate both the ground states and the excitations of these rings. Applying a magnetic field perpendicular to the plane of the rings, we find that when approximate…
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Making use of self-assembly techniques, we demonstrate the realization of nanoscopic semiconductor quantum rings in which the electronic states are in the true quantum limit. We employ two complementary spectroscopic techniques to investigate both the ground states and the excitations of these rings. Applying a magnetic field perpendicular to the plane of the rings, we find that when approximately one flux quantum threads the interior of each ring, a change in the ground state from angular momentum $\ell = 0$ to $\ell = -1$ takes place. This ground state transition is revealed both by a drastic modification of the excitation spectrum and by a change in the magnetic field dispersion of the single-electron charging energy.
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Submitted 1 December, 1999; v1 submitted 18 August, 1999;
originally announced August 1999.
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Carrier-Carrier Correlations in an Optically Excited Single Semiconductor Quantum Dot
Authors:
E. Dekel,
D. Gershoni,
E. Ehrenfreund,
J. M. Garcia,
P. M. Petroff
Abstract:
We applied low temperature diffraction limited confocal optical microscopy to spatially resolve, and spectroscopically study photoluminescence from single self-assembled semiconductor quantum dots. Using selective wavelength imaging we unambiguously demonstrated that a single photoexcited quantum dot emits light in a few very narrow spectral lines. The measured spectrum and its dependence on the…
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We applied low temperature diffraction limited confocal optical microscopy to spatially resolve, and spectroscopically study photoluminescence from single self-assembled semiconductor quantum dots. Using selective wavelength imaging we unambiguously demonstrated that a single photoexcited quantum dot emits light in a few very narrow spectral lines. The measured spectrum and its dependence on the power of either cw or pulsed excitation are explained by taking carrier correlations into account. We solve numerically a many body Hamiltonian for a model quantum dot, and we show that the multi line emission spectrum is due to optical transitions between confined exciton multiplexes. We furthermore show that the electron-electron and hole-hole exchange interaction is responsible for the typical appearance of pairs in the photoluminescence spectra and for the appearance of red shifted new lines as the excitation power increases. The fact that only a few spectral lines appear in the emission spectrum strongly indicates fast thermalization. This means that a multiexciton relaxes to its ground state much faster than its radiative lifetime.
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Submitted 27 April, 1999; v1 submitted 22 April, 1999;
originally announced April 1999.
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Multi-Exciton Spectroscopy of a Single Self Assembled Quantum Dot
Authors:
E. Dekel,
D. Gershoni,
E. Ehrenfreund,
D. Spektor J. M. Garcia,
P. M. Petroff
Abstract:
We apply low temperature confocal optical microscopy to spatially resolve, and spectroscopically study a single self assembled quantum dot. By comparing the emission spectra obtained at various excitation levels to a theoretical many body model, we show that: Single exciton radiative recombination is very weak. Sharp spectral lines are due to optical transitions between confined multiexcitonic s…
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We apply low temperature confocal optical microscopy to spatially resolve, and spectroscopically study a single self assembled quantum dot. By comparing the emission spectra obtained at various excitation levels to a theoretical many body model, we show that: Single exciton radiative recombination is very weak. Sharp spectral lines are due to optical transitions between confined multiexcitonic states among which excitons thermalize within their lifetime. Once these few states are fully occupied, broad bands appear due to transitions between states which contain continuum electrons.
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Submitted 23 March, 1998;
originally announced March 1998.
