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A high aspect ratio Fin-Ion Sensitive Field Effect Transistor: compromises towards better electrochemical bio-sensing
Authors:
Serena Rollo,
Dipti Rani,
Renaud Leturcq,
Wouter Olthuis,
César Pascual García
Abstract:
The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturisation with the expectation of improving sensitivity…
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The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturisation with the expectation of improving sensitivity and response time, but presenting issues with reproducibility and noise level. Here we propose a Fin-Field Effect Transistor (FinFET) with a high heigth to width aspect ratio for electrochemical biosensing solving the issue of nanosensors in terms of reproducibility and noise, while keeping the fast response time. We fabricated different devices and characterised their performance with their response to the pH changes that fitted to a Nernst-Poisson model. The experimental data were compared with simulations of devices with different aspect ratio, stablishing an advantage in total signal and linearity for the FinFETs with higher aspect ratio. In addition, these FinFETs promise the optimisation of reliability and efficiency in terms of limits of detection, for which the interplay of the size and geometry of the sensor with the diffusion of the analytes plays a pivotal role.
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Submitted 8 January, 2019;
originally announced January 2019.
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Josephson current in nanofabricated V/Cu/V mesoscopic junctions
Authors:
C. Pascual Garcia,
F. Giazotto
Abstract:
We report the successful fabrication of planar V/Cu/V mesoscopic Josephson weak-links of different size, and the analysis of their low-temperature behavior. The shorter junctions exhibit critical currents of several tens of microA at 350 mK, while Josephson coupling persists up to ~2.7 K. Good agreement is obtained by comparing the measured switching currents to a model which holds in the diffus…
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We report the successful fabrication of planar V/Cu/V mesoscopic Josephson weak-links of different size, and the analysis of their low-temperature behavior. The shorter junctions exhibit critical currents of several tens of microA at 350 mK, while Josephson coupling persists up to ~2.7 K. Good agreement is obtained by comparing the measured switching currents to a model which holds in the diffusive regime. Our results demonstrate that V is an excellent candidate for the implementation of superconducting nanodevices operating at a few kelvins.
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Submitted 6 April, 2009; v1 submitted 16 February, 2009;
originally announced February 2009.
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A molecular state of correlated electrons in a quantum dot
Authors:
Sokratis Kalliakos,
Massimo Rontani,
Vittorio Pellegrini,
Cesar Pascual Garcia,
Aron Pinczuk,
Guido Goldoni,
Elisa Molinari,
Loren N. Pfeiffer,
Ken W. West
Abstract:
Correlation among particles in finite quantum systems leads to complex behaviour and novel states of matter. One remarkable example is predicted to occur in a semiconductor quantum dot (QD) where at vanishing density the Coulomb correlation among electrons rigidly fixes their relative position as that of the nuclei in a molecule. In this limit, the neutral few-body excitations are roto-vibration…
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Correlation among particles in finite quantum systems leads to complex behaviour and novel states of matter. One remarkable example is predicted to occur in a semiconductor quantum dot (QD) where at vanishing density the Coulomb correlation among electrons rigidly fixes their relative position as that of the nuclei in a molecule. In this limit, the neutral few-body excitations are roto-vibrations, which have either rigid-rotor or relative-motion character. In the weak-correlation regime, on the contrary, the Coriolis force mixes rotational and vibrational motions. Here we report evidence of roto-vibrational modes of an electron molecular state at densities for which electron localization is not yet fully achieved. We probe these collective modes by inelastic light scattering in QDs containing four electrons. Spectra of low-lying excitations associated to changes of the relative-motion wave function -the analogues of the vibration modes of a conventional molecule- do not depend on the rotational state represented by the total angular momentum. Theoretical simulations via the configuration-interaction (CI) method are in agreement with the observed roto-vibrational modes and indicate that such molecular excitations develop at the onset of short-range correlation.
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Submitted 12 February, 2009;
originally announced February 2009.
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Recombination limited energy relaxation in a BCS superconductor
Authors:
A. V. Timofeev,
C. Pascual Garcia,
N. B. Kopnin,
A. M. Savin,
M. Meschke,
F. Giazotto,
J. P. Pekola
Abstract:
We study quasiparticle energy relaxation at sub-kelvin temperatures by injecting hot electrons into an aluminium island and measuring the energy flux from electrons into phonons both in the superconducting and in the normal state. The data show strong reduction of the flux at low temperatures in the superconducting state, in qualitative agreement with the presented quasiclassical theory for clea…
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We study quasiparticle energy relaxation at sub-kelvin temperatures by injecting hot electrons into an aluminium island and measuring the energy flux from electrons into phonons both in the superconducting and in the normal state. The data show strong reduction of the flux at low temperatures in the superconducting state, in qualitative agreement with the presented quasiclassical theory for clean superconductors. Quantitatively, the energy flux exceeds that from the theory both in the superconducting and in the normal state, possibly suggesting an enhanced or additional relaxation process.
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Submitted 28 April, 2008;
originally announced April 2008.
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Manipulation and Generation of Supercurrent in Out-of-Equilibrium Josephson Tunnel Nanojunctions
Authors:
S. Tirelli,
A. M. Savin,
C. Pascual Garcia,
J. P. Pekola,
F. Beltram,
F. Giazotto
Abstract:
We demonstrate experimentally manipulation of supercurrent in Al-AlO_x-Ti Josephson tunnel junctions by injecting quasiparticles in a Ti island from two additional tunnel-coupled Al superconducting reservoirs. Both supercurrent enhancement and quenching with respect to equilibrium are achieved. We demonstrate cooling of the Ti line by quasiparticle injection from the normal state deep into the s…
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We demonstrate experimentally manipulation of supercurrent in Al-AlO_x-Ti Josephson tunnel junctions by injecting quasiparticles in a Ti island from two additional tunnel-coupled Al superconducting reservoirs. Both supercurrent enhancement and quenching with respect to equilibrium are achieved. We demonstrate cooling of the Ti line by quasiparticle injection from the normal state deep into the superconducting phase. A model based on heat transport and non-monotonic current-voltage characteristic of a Josephson junction satisfactorily accounts for our findings.
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Submitted 10 September, 2008; v1 submitted 16 April, 2008;
originally announced April 2008.
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Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots
Authors:
Sokratis Kalliakos,
Vittorio Pellegrini,
Cesar Pascual Garcia,
Aron Pinczuk,
Loren N. Pfeiffer,
Ken. W. West
Abstract:
Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells…
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Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells by resonant inelastic light scattering. These findings open the way to the manipulation of single electrons in these quantum dots without the need of external metallic gates.
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Submitted 2 January, 2008;
originally announced January 2008.
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Control of optical emission in doped GaAs/AlGaAs nanofabricated quantum dots
Authors:
Sokratis Kalliakos,
Cesar Pascual Garcia,
Vittorio Pellegrini,
Marian Zamfirescu,
Lucia Cavigli,
Massimo Gurioli,
Anna Vinattieri,
Aron Pinczuk,
Brian S. Dennis,
Loren N. Pfeiffer,
Ken W. West
Abstract:
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Excitonic-like and biexcitonic-like emiss…
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Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Excitonic-like and biexcitonic-like emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated QDs for applications in areas that require fine control of optical emission.
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Submitted 2 March, 2007;
originally announced March 2007.
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Observation of low-lying excitations of electrons in coupled quantum dots
Authors:
Cesar Pascual Garcia,
Sokratis Kalliakos,
Vittorio Pellegrini,
Aron Pinczuck,
Brian S. Dennis,
Loren N. Pfeiffer,
Ken W. West
Abstract:
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by the interplay between the QD confinement energy $\hbar ω_0$ and the tunneling gap $Δ_{SAS}$, the splitting between the symmetric and anti-symmetric delocalize…
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Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by the interplay between the QD confinement energy $\hbar ω_0$ and the tunneling gap $Δ_{SAS}$, the splitting between the symmetric and anti-symmetric delocalized single particle molecular states. The narrow line-widths displayed by electronic excitations in these nanostructures indicate promising venues for the spectroscopic investigation of entanglement of electron states in these artificial molecules.
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Submitted 23 November, 2005;
originally announced November 2005.
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Evidence of correlation in spin excitations of few-electron quantum dots
Authors:
Cesar Pascual Garcia,
Vittorio Pellegrini,
Aron Pinczuk,
Massimo Rontani,
Guido Goldoni,
Elisa Molinari,
Brian S. Dennis,
Loren N. Pfeiffer,
Ken W. West
Abstract:
We report inelastic light scattering measurements of spin and charge excitations in nanofabricated AlGaAs/GaAs quantum dots with few electrons. A narrow spin excitation peak is observed and assigned to the intershell triplet-to-singlet monopole mode of dots with four electrons. Configurationinteraction theory provides precise quantitative interpretations that uncover large correlation effects th…
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We report inelastic light scattering measurements of spin and charge excitations in nanofabricated AlGaAs/GaAs quantum dots with few electrons. A narrow spin excitation peak is observed and assigned to the intershell triplet-to-singlet monopole mode of dots with four electrons. Configurationinteraction theory provides precise quantitative interpretations that uncover large correlation effects that are comparable to exchange Coulomb interactions.
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Submitted 7 September, 2005; v1 submitted 6 June, 2005;
originally announced June 2005.
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1.26 $μ$m intersubband transitions in In$_{0.3}$Ga$_{0.7}$As/AlAs quantum wells
Authors:
Cesar Pascual Garcia,
Andrea De Nardis,
Vittorio Pellegrini,
Jean Marc Jancu,
Fabio Beltram,
Bernhard H. Mueller,
Lucia Sorba,
Alfonso Franciosi
Abstract:
We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain the shortest wavelength intersubband transition ever achieved in a semiconductor system. The corresponding transitions occur between the first confined electron…
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We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain the shortest wavelength intersubband transition ever achieved in a semiconductor system. The corresponding transitions occur between the first confined electronic levels of the well following mid-infrared optical pumping of electrons from the barrier X-valley into the well ground state.
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Submitted 8 November, 2000;
originally announced November 2000.
