Showing 1–1 of 1 results for author: Gao, W W

Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

Authors: Y. Z. Chen, N. Bovet, T. Kasama, W. W. Gao, S. Yazdi, C. Ma, N. Pryds, S. Linderoth

Abstract: Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface. Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface. △ Less

Submitted 13 December, 2013; originally announced December 2013.

Comments: Adv. Mater. published on-line