Showing 1–10 of 10 results for author: Ganss, F

Defect analysis of the $β$- to $γ$-Ga$_{2}$O$_{3}$ phase transition

Authors: Umutcan Bektas, Maciej O. Liedke, Huan Liu, Fabian Ganss, Maik Butterling, Nico Klingner, René Hübner, Ilja Makkonen, Andreas Wagner, Gregor Hlawacek

Abstract: In this study, we investigate the ion-irradiation-induced phase transition in gallium oxide (Ga2O3) from the $β$ to the $γ$ phase, the role of defects during the transformation, and the quality of the resulting crystal structure. Using a multi-method analysis approach including X-ray diffraction (XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry in channeling mod… ▽ More In this study, we investigate the ion-irradiation-induced phase transition in gallium oxide (Ga2O3) from the $β$ to the $γ$ phase, the role of defects during the transformation, and the quality of the resulting crystal structure. Using a multi-method analysis approach including X-ray diffraction (XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry in channeling mode (RBS/c), Doppler broadening variable energy positron annihilation spectroscopy (DB-VEPAS) and variable energy positron annihilation lifetime spectroscopy (VEPALS) supported by density functional theory (DFT) calculations, we have characterized defects at all the relevant stages before, during, and after the phase transition. Reduction in backscattering yield was observed in RBS/c spectra after the transition to the $γ$ phase. This is corroborated by a significant decrease in the positron trapping center density due to generation of embedded vacancies intrinsic for the $γ$-Ga2O3 but too shallow in order to trap positrons. A comparison of the observed positron lifetime of $γ$-Ga2O3 with different theoretical models shows good agreement with the three-site $γ$ phase approach. A characteristic increase in the effective positron diffusion length and the positron lifetime at the transition point from $β$-Ga2O3 to $γ$-Ga2O3 enables visualization of the phase transition with positrons for the first time. Moreover, a subsequent reduction of these quantities with increasing irradiation fluence was observed, which we attribute to further evolution of the $γ$-Ga2O3 and changes in the gallium vacancy density as well as relative occupation in the crystal lattice. △ Less

Submitted 6 May, 2025; originally announced May 2025.

Formation of martensitic microstructure in epitaxial Ni-Mn-Ga films after fast cooling

Authors: Yuru Ge, Fabian Ganss, Klara Lünser, Satyakam Kar, René Hübner, Shengqiang Zhou, Lars Rebohle, Sebastian Fähler

Abstract: Shape memory alloys have a wide range of applications, including high stroke actuation, energy-efficient ferroic cooling, and energy harvesting. These applications are based on a reversible martensitic transformation, which results in a complex microstructure in the martensitic state. Understanding the formation of this microstructure after fast heating and cooling is crucial, as a high cycle freq… ▽ More Shape memory alloys have a wide range of applications, including high stroke actuation, energy-efficient ferroic cooling, and energy harvesting. These applications are based on a reversible martensitic transformation, which results in a complex microstructure in the martensitic state. Understanding the formation of this microstructure after fast heating and cooling is crucial, as a high cycle frequency is essential for achieving high power density in the mentioned applications. This article uses an epitaxial Ni-Mn-Ga film as a model system to study the formation of the martensitic microstructure, since the high surface-to-volume ratio of thin films enables rapid heating and cooling, and since the formation of a multi-level hierarchical microstructure during slow cooling of this material system is already well understood. We apply a millisecond flash lamp pulse of varying energy density on the Ni-Mn-Ga film and analyse the hierarchical martensitic microstructure afterwards. Substantial differences compared to slow cooling occur, which we attribute to the limited time available for the microstructure to form and to the thermal stress between film and substrate during rapid temperature changes. △ Less

Submitted 30 September, 2024; originally announced September 2024.

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Authors: Oliver Steuer, Daniel Schwarz, Michael Oehme, Florian Bärwolf, Yu Cheng, Fabian Ganss, René Hübner, René Heller, Shengqiang Zhou, Manfred Helm, Gianaurelio Cuniberti, Yordan M. Georgiev, Slawomir Prucnal

Abstract: Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseud… ▽ More Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseudomorphic growth of Si1-x-yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, X-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4x1019 cm-3. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Authors: Oliver Steuer, Michail Michailow, René Hübner, Krzysztof Pyszniak, Marcin Turek, Ulrich Kentsch, Fabian Ganss, Muhammad Moazzam Khan, Lars Rebohle, Shengqiang Zhou, Joachim Knoch, Manfred Helm, Gianaurelio Cuniberti, Yordan M. Georgiev, Slawomir Prucnal

Abstract: For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band g… ▽ More For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band gap and strain engineering and can improve the carrier mobilities, which makes Si1-x-yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1-x-yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical-mechanical polishing giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si1-x-yGeySnx alloys by Sn ion beam implantation into Si1-yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1-yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si1-x-yGeySnx with up to 2.3 at.% incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1-yGey films by masking unstructured regions on the chip. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Tunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films

Authors: Pavlo Makushko, Sergey Kovalev, Yevhen Zabila, Igor Ilyakov, Alexey Ponomaryov, Atiqa Arshad, Gulloo Lal Prajapati, Thales V. A. G. de Oliveira, Jan-Christoph Deinert, Paul Chekhonin, Igor Veremchuk, Tobias Kosub, Yurii Skourski, Fabian Ganss, Denys Makarov, Carmine Ortix

Abstract: The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electronic transport phenomenon that induces frequency doubling and occurs in non-centrosymmetric crystals with large Berry curvature -- an emergent magnetic field encoding the geometric properties of electronic wavefunctions.… ▽ More The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electronic transport phenomenon that induces frequency doubling and occurs in non-centrosymmetric crystals with large Berry curvature -- an emergent magnetic field encoding the geometric properties of electronic wavefunctions. The design of (opto)electronic devices based on the NLHE is however hindered by the fact that this nonlinear effect typically appears at low temperatures and in complex compounds characterized by Dirac or Weyl electrons. Here, we show a strong room temperature NLHE in the centrosymmetric elemental material bismuth synthesized in the form of technologically relevant polycrystalline thin films. The ($1\,1\,1$) surface electrons of this material are equipped with a Berry curvature triple that activates side jumps and skew scatterings generating nonlinear transverse currents. We also report a boost of the zero field nonlinear transverse voltage in arc-shaped bismuth stripes due to an extrinsic geometric classical counterpart of the NLHE. This electrical frequency doubling in curved geometries is then extended to optical second harmonic generation in the terahertz (THz) spectral range. The strong nonlinear electrodynamical responses of the surface states are further demonstrated by a concomitant highly efficient THz third harmonic generation which we achieve in a broad range of frequencies in Bi and Bi-based heterostructures. Combined with the possibility of growth on CMOS-compatible and mechanically flexible substrates, these results highlight the potential of Bi thin films for THz (opto)electronic applications. △ Less

Submitted 23 October, 2023; originally announced October 2023.

Comments: 44 pages, 21 figures

Journal ref: Nature Electronics 7, 207 (2024)

Ferromagnetic interlayer coupling in CrSBr crystals irradiated by ions

Authors: Fangchao Long, Mahdi Ghorbani-Asl, Kseniia Mosina, Yi Li, Kaiman Lin, Fabian Ganss, René Hübner, Zdenek Sofer, Florian Dirnberger, Akashdeep Kamra, Arkady V. Krasheninnikov, Slawomir Prucnal, Manfred Helm, Shengqiang Zhou

Abstract: Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic i… ▽ More Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggest that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers. △ Less

Submitted 27 September, 2023; v1 submitted 30 May, 2023; originally announced May 2023.

Comments: 25 pages including the supporting information, published as Nano Lett. 23, 8468-8473 (2023)

Journal ref: Nano Lett. 23, 8468-8473 (2023)

Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures

Authors: Sri Sai Phani Kanth Arekapudi, Daniel Bülz, Fabian Ganss, Fabian Samad, Chen Luo, Dietrich R. T. Zahn, Kilian Lenz, Georgeta Salvan, Manfred Albrecht, Olav Hellwig

Abstract: Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and transition metal oxide-based AFMs can host various coexisting ordered, disordered, and frustrated AFM phases. Such coexisting phases in the exchange coupled ferroma… ▽ More Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and transition metal oxide-based AFMs can host various coexisting ordered, disordered, and frustrated AFM phases. Such coexisting phases in the exchange coupled ferromagnetic (FM)/AFM-based heterostructures can result in unusual magnetic and magnetotransport phenomena. Here, we integrate chemically disordered AFM IrMn3 thin films with coexisting AFM phases into complex exchange coupled MgO(001)/Ni3Fe/IrMn3/Ni3Fe/CoO heterostructures and study the structural, magnetic, and magnetotransport properties in various magnetic field cooling states. In particular, we unveil the impact of rotating the relative orientation of the disordered and reversible AFM moments with respect to the irreversible AFM moments on the magnetic and magnetoresistance properties of the exchange coupled heterostructures. We further found that the persistence of AFM grains with thermally disordered and reversible AFM order is crucial for achieving highly tunable magnetic properties and multi-level magnetoresistance states. We anticipate that the introduced approach and the heterostructure architecture can be utilized in future spintronic devices to manipulate the thermally disordered and reversible AFM order at the nanoscale. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Comments: 27 pages and 9 figures; 19 supplementary figures and 1 table

Topological Hall effect in single thick SrRuO3 layers induced by defect engineering

Authors: Changan Wang, Ching-Hao Chang, Andreas Herklotz, Chao Chen, Fabian Ganss, Ulrich Kentsch, Deyang Chen, Xingsen Gao, Yu-Jia Zeng, Olav Hellwig, Manfred Helm, Sibylle Gemming, Ying-Hao Chu, Shengqiang Zhou

Abstract: The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by in… ▽ More The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study THE is observed in 60 nm thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 K to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated to the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronics devices. △ Less

Submitted 23 April, 2020; originally announced April 2020.

Comments: 18 pages, including the suppl. material, to be published at Advanced Electronic Materials

Journal ref: Adv. Electronic Materials, 6, 2000184 (2020)

Finite size effects on the ultrafast remagnetization dynamics of FePt

Authors: L. Willig, A. von Reppert, M. Deb, F. Ganss, O. Hellwig, M. Bargheer

Abstract: We investigate the ultrafast magnetization dynamics of FePt in the L10 phase after an optical heating pulse, as used in heat assisted magnetic recording. We compare continuous and nanogranular thin films and emphasize the impact of the finite size on the remagnetization dynamics. The remagnetization speeds up significantly with increasing external magnetic field only for the continuous film, where… ▽ More We investigate the ultrafast magnetization dynamics of FePt in the L10 phase after an optical heating pulse, as used in heat assisted magnetic recording. We compare continuous and nanogranular thin films and emphasize the impact of the finite size on the remagnetization dynamics. The remagnetization speeds up significantly with increasing external magnetic field only for the continuous film, where domain wall motion governs the dynamics. The ultrafast remagnetization dynamics in the continuous film are only dominated by heat transport in the regime of high magnetic fields, whereas the timescale required for cooling is prevalent in the granular film for all magnetic field strengths. These findings highlight the necessary conditions for studying the intrinsic heat transport properties in magnetic materials. △ Less

Submitted 3 October, 2019; originally announced October 2019.

Comments: 7 pages, 4 Figures

Journal ref: Phys. Rev. B 100, 224408 (2019)

Size-dependent magnetization switching characteristics and spin wave modes of FePt nanostructures

Authors: R. Brandt, R. Rückriem, D. A. Gilbert, F. Ganss, T. Senn, Kai Liu, M. Albrecht, H. Schmidt

Abstract: We present a comprehensive investigation of the size-dependent switching characteristics and spin wave modes of FePt nanoelements. Curved nanomagnets ("caps") are compared to flat disks of identical diameter and volume over a size range of 100 to 300nm. Quasi-static magnetization reversal analysis using first-order reversal curves (FORC) shows that spherical caps have lower vortex nucleation and a… ▽ More We present a comprehensive investigation of the size-dependent switching characteristics and spin wave modes of FePt nanoelements. Curved nanomagnets ("caps") are compared to flat disks of identical diameter and volume over a size range of 100 to 300nm. Quasi-static magnetization reversal analysis using first-order reversal curves (FORC) shows that spherical caps have lower vortex nucleation and annihilation fields than the flat disks. As the element diameter decreases, the reversal mechanism in the caps crosses over sooner to coherent rotation than in the disks. The magnetization dynamics are studied using optically induced small angle precession and reveal a strong size dependence that differs for the two shapes. Flat disks exhibit well-known center and edge modes at all sizes, but as the diameter of the caps increases from 100 to 300 nm, additional oscillation modes appear in agreement with dynamic micromagnetic simulations. In addition, we show that the three-dimensional curvature of the cap causes a much greater sensitivity to the applied field angle which provides an additional way for controlling the ultrafast response of nanomagnetic elements. △ Less

Submitted 16 May, 2013; originally announced May 2013.

Comments: 23 pages, 8 figures

Journal ref: J. Appl. Phys. 113, 203910 (2013)