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Spin Caloritronics in irradiated chiral ferromagnetic systems
Authors:
Sudin Ganguly,
Moumita Dey,
Santanu K. Maiti
Abstract:
We study the charge and spin-dependent thermoelectric response of a ferromagnetic helical system irradiated by arbitrarily polarized light, using a tight-binding framework and the Floquet-Bloch formalism. Transport properties for individual spin channels are determined by employing the non-equilibrium Green's function technique, while phonon thermal conductance is evaluated using a mass-spring mod…
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We study the charge and spin-dependent thermoelectric response of a ferromagnetic helical system irradiated by arbitrarily polarized light, using a tight-binding framework and the Floquet-Bloch formalism. Transport properties for individual spin channels are determined by employing the non-equilibrium Green's function technique, while phonon thermal conductance is evaluated using a mass-spring model with different lead materials. The findings reveal that that light irradiation induces spin-split transmission features, suppresses thermal conductance, and yields favorable spin thermopower and figure of merit (FOM). The spin FOM consistently outperforms its charge counterpart under various light conditions. Moreover, long-range hopping is shown to enhance the spin thermoelectric performance, suggesting a promising strategy for efficient energy conversion in related ferromagnetic systems.
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Submitted 3 July, 2025;
originally announced July 2025.
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Enhanced UV Photodetector Efficiency with a ZnO/Ga$_2$O$_3$ Heterojunction
Authors:
Shashi Pandey,
Swaroop Ganguly,
Alok Shukla,
Anurag Tripathi
Abstract:
Heterostructures comprising uncoated ZnO and coated with thin layers of Ga$_2$O$_3$ were produced using spin-coating and subsequent hydrothermal processing. X-ray diffraction examination verifies the structural integrity of the synthesized heterostructures (HTs). Optical and photoluminescence spectra were recorded to assess the variation in absorption and emission of the Ga$_2$O$_3$-coated HTs in…
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Heterostructures comprising uncoated ZnO and coated with thin layers of Ga$_2$O$_3$ were produced using spin-coating and subsequent hydrothermal processing. X-ray diffraction examination verifies the structural integrity of the synthesized heterostructures (HTs). Optical and photoluminescence spectra were recorded to assess the variation in absorption and emission of the Ga$_2$O$_3$-coated HTs in comparison to the pristine ZnO. We conducted comparative density-functional theory (DFT) computations to corroborate the measured band gaps of both categories of HTs. To assess the stability of our devices, the transient response to on/off light switching under zero bias has been studied. The rise time $τ_{r1}$ ($τ_{r2}$) is 2300 (500) ms and the decay time $τ_{d1}$ ($τ_{d2}$) is 2700 (5000) ms have been observed for bare ZnO and ZnO/Ga$_2$O$_3$ HTs, respectively. A significant amount of change was also observed in the electrical transport properties from bare ZnO to ZnO/Ga$_2$O$_3$. To see the performance of device, responsivity (R) and detectivity (D = 1/NEP$_B$) have been measured. It is evident from observation that responsivity of a device shows maximum value in UV region while it is reducing with visible region for HTs. In case of detectivity, the maximum value reached was $145 \times 10^{14}$ Hz$^{1/2}$/W (at ~ 200 nm) and $38 \times 10^{14}$ Hz$^{1/2}$/W (at 300 nm) for Ga$_2$O$_3$ coated ZnO, and bare ZnO HTs, respectively. The maximum responsivity measured for the bare ZnO HTs is 7 (A/W) while that of Ga$_2$O$_3$ coated ZnO HTs is 38 (A/W). It suggests a simple way of designing materials for fabricating broad-range cost-effective photodetectors.
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Submitted 22 June, 2025;
originally announced June 2025.
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Photo-induced directional transport in extended SSH chains
Authors:
Usham Harish Kumar Singha,
Kallol Mondal,
Sudin Ganguly,
Santanu K. Maiti
Abstract:
We investigate the current-voltage characteristics of an extended Su-Schrieffer-Heeger (SSH) chain under irradiation by arbitrarily polarized light, demonstrating its potential as a light-controlled rectifier. Irradiation of light induces anisotropy in the system, enabling directional current flow and active control of rectification behavior. Our analysis demonstrates that, under optimized light p…
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We investigate the current-voltage characteristics of an extended Su-Schrieffer-Heeger (SSH) chain under irradiation by arbitrarily polarized light, demonstrating its potential as a light-controlled rectifier. Irradiation of light induces anisotropy in the system, enabling directional current flow and active control of rectification behavior. Our analysis demonstrates that, under optimized light parameters, the rectification efficiency can exceed 90\%. Moreover, the direction of rectification-whether positive or negative-can be precisely controlled by varying the polarization of the light, highlighting the potential for external optical control of electronic behavior. The effect of light irradiation is incorporated using the Floquet-Bloch ansatz combined with the minimal coupling scheme, while charge transport is computed through the nonequilibrium Green's function formalism within the Landauer-Büttiker framework.
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Submitted 11 June, 2025;
originally announced June 2025.
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Reentrant localization in a quasiperiodic chain with correlated hopping sequences
Authors:
Sourav Karmakar,
Sudin Ganguly,
Santanu K. Maiti
Abstract:
Quasiperiodic systems are known to exhibit localization transitions in low dimensions, wherein all electronic states become localized beyond a critical disorder strength. Interestingly, recent studies have uncovered a reentrant localization (RL) phenomenon: upon further increasing the quasiperiodic disorder strength beyond the localization threshold, a subset of previously localized states can bec…
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Quasiperiodic systems are known to exhibit localization transitions in low dimensions, wherein all electronic states become localized beyond a critical disorder strength. Interestingly, recent studies have uncovered a reentrant localization (RL) phenomenon: upon further increasing the quasiperiodic disorder strength beyond the localization threshold, a subset of previously localized states can become delocalized again within a specific parameter window. While RL transitions have been primarily explored in systems with simple periodic modulations, such as dimerized or long-range hopping integrals, the impact of more intricate or correlated hopping structures on RL behavior remains largely elusive. In this work, we investigate the localization behavior in a one-dimensional lattice featuring staggered, correlated on-site potentials following the Aubry-André-Harper model, along with off-diagonal hopping modulations structured according to quasiperiodic Fibonacci and Bronze Mean sequences. By systematically analyzing the fractal dimension, inverse participation ratio, and normalized participation ratio, we demonstrate the occurrence of RL transitions induced purely by the interplay between quasiperiodic on-site disorder and correlated hopping. Our findings highlight the crucial role of underlying structural correlations in governing localization-delocalization transitions in low-dimensional quasiperiodic systems, where the correlated disorder manifests in both diagonal and off-diagonal terms.
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Submitted 3 June, 2025;
originally announced June 2025.
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Ultrafast decoupling of polarization and strain in ferroelectric BaTiO$_3$
Authors:
Le Phuong Hoang,
David Pesquera,
Gerard N. Hinsley,
Robert Carley,
Laurent Mercadier,
Martin Teichmann,
Saptam Ganguly,
Teguh Citra Asmara,
Giacomo Merzoni,
Sergii Parchenko,
Justine Schlappa,
Zhong Yin,
José Manuel Caicedo Roque,
José Santiso,
Irena Spasojevic,
Cammille Carinan,
Tien-Lin Lee,
Kai Rossnage,
Jörg Zegenhagen,
Gustau Catalan,
Ivan A. Vartanyants,
Andreas Scherz,
Giuseppe Mercurio
Abstract:
A fundamental understanding of the interplay between lattice structure, polarization and electrons is pivotal to the optical control of ferroelectrics. The interaction between light and matter enables the remote and wireless control of the ferroelectric polarization on the picosecond timescale, while inducing strain, i.e., lattice deformation. At equilibrium, the ferroelectric polarization is prop…
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A fundamental understanding of the interplay between lattice structure, polarization and electrons is pivotal to the optical control of ferroelectrics. The interaction between light and matter enables the remote and wireless control of the ferroelectric polarization on the picosecond timescale, while inducing strain, i.e., lattice deformation. At equilibrium, the ferroelectric polarization is proportional to the strain, and is typically assumed to be so also out of equilibrium. Decoupling the polarization from the strain would remove the constraint of sample design and provide an effective knob to manipulate the polarization by light. Here, upon an above-bandgap laser excitation of the prototypical ferroelectric BaTiO$_3$, we induce and measure an ultrafast decoupling between polarization and strain that begins within 350 fs, by softening Ti-O bonds via charge transfer, and lasts for several tens of picoseconds. We show that the ferroelectric polarization out of equilibrium is mainly determined by photoexcited electrons, instead of the strain. This excited state could serve as a starting point to achieve stable and reversible polarization switching via THz light. Our results demonstrate a light-induced transient and reversible control of the ferroelectric polarization and offer a pathway to control by light both electric and magnetic degrees of freedom in multiferroics.
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Submitted 25 March, 2025;
originally announced March 2025.
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A Matrix Quantum Kinetic Treatment of Impact Ionization in Avalanche Photodiodes
Authors:
Sheikh Z. Ahmed,
Shafat Shahnewaz,
Samiran Ganguly,
Joe C Campbell,
Avik W. Ghosh
Abstract:
Matrix based quantum kinetic simulations have been widely used for the predictive modeling of electronic devices. Inelastic scattering from phonons and electrons are typically treated as higher order processes in these treatments, captured using mean-field approximations. Carrier multiplication in Avalanche Photodiodes (APDs), however, relies entirely on strongly inelastic impact ionization, makin…
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Matrix based quantum kinetic simulations have been widely used for the predictive modeling of electronic devices. Inelastic scattering from phonons and electrons are typically treated as higher order processes in these treatments, captured using mean-field approximations. Carrier multiplication in Avalanche Photodiodes (APDs), however, relies entirely on strongly inelastic impact ionization, making electron-electron scattering the dominant term requiring a rigorous, microscopic treatment. We go well beyond the conventional Born approximation for scattering to develop a matrix-based quantum kinetic theory for impact ionization, involving products of multiple Green's functions. Using a model semiconductor in a reverse-biased p-i-n configuration, we show how its calculated non-equilibrium charge distributions show multiplication at dead-space values consistent with energy-momentum conservation. Our matrix approach can be readily generalized to more sophisticated atomistic Hamiltonians, setting the stage for a fully predictive, `first principles' theory of APDs.
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Submitted 24 March, 2025;
originally announced March 2025.
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A generalized framework for viscous and non-viscous damping models
Authors:
Soumya Kanti Ganguly,
Indrajit Mukherjee
Abstract:
The inadequacy of the classical viscous damping model in capturing dissipation across a wide range of applications has led to the development of non-viscous damping models. While non-viscous models describe damping force satisfactorily, they offer limited physical insight. Leveraging an existing framework, well known to the physics community, this article provides fresh insights into the framework…
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The inadequacy of the classical viscous damping model in capturing dissipation across a wide range of applications has led to the development of non-viscous damping models. While non-viscous models describe damping force satisfactorily, they offer limited physical insight. Leveraging an existing framework, well known to the physics community, this article provides fresh insights into the framework of non viscous damping for engineers. For this purpose, we revisit the motion of a particle coupled to a bath of harmonic oscillators at a finite temperature. We obtain a general expression for non-viscous damping in terms of a general memory kernel function. For specific choices of the kernel function, we derive exact expressions for a host of non-viscous damping models including the classical viscous damping as a special case.
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Submitted 11 March, 2025;
originally announced March 2025.
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Instabilities, thermal fluctuations, defects and dislocations in the crystal-$R_I$-$R_{II}$ rotator phase transitions of n-alkanes
Authors:
Soumya Kanti Ganguly,
Prabir K. Mukherjee
Abstract:
The theoretical study of instabilities, thermal fluctuations, and topological defects in the crystal-rotator-I-rotator-II ($X-R_{I}-R_{II}$) phase transitions of n-alkanes has been conducted. First, we examine the nature of the $R_{I}-R_{II}$ phase transition in nanoconfined alkanes. We propose that under confined conditions, the presence of quenched random orientational disorder makes the…
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The theoretical study of instabilities, thermal fluctuations, and topological defects in the crystal-rotator-I-rotator-II ($X-R_{I}-R_{II}$) phase transitions of n-alkanes has been conducted. First, we examine the nature of the $R_{I}-R_{II}$ phase transition in nanoconfined alkanes. We propose that under confined conditions, the presence of quenched random orientational disorder makes the $R_{I}$ phase unstable. This disorder-mediated transition falls within the Imry-Ma universality class. Next, we discuss the role of thermal fluctuations in certain rotator phases, as well as the influence of dislocations on the $X-R_I$ phase transition. Our findings indicate that the Herringbone order in the $X$-phase and the Hexatic order in the $R_{II}$-phase exhibit quasi-long-range characteristics. Furthermore, we find that in two dimensions, the unbinding of dislocations does not result in a disordered liquid state.
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Submitted 15 February, 2025;
originally announced February 2025.
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Percolation in a three-dimensional non-symmetric multi-color loop model
Authors:
Soumya Kanti Ganguly,
Sumanta Mukherjee,
Chandan Dasgupta
Abstract:
We conducted Monte Carlo simulations to analyze the percolation transition of a non-symmetric loop model on a regular three-dimensional lattice. We calculated the critical exponents for the percolation transition of this model. The percolation transition occurs at a temperature that is close to, but not exactly the thermal critical temperature. Our finite-size study on this model yielded a correla…
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We conducted Monte Carlo simulations to analyze the percolation transition of a non-symmetric loop model on a regular three-dimensional lattice. We calculated the critical exponents for the percolation transition of this model. The percolation transition occurs at a temperature that is close to, but not exactly the thermal critical temperature. Our finite-size study on this model yielded a correlation length exponent that agrees with that of the three-dimensional XY model with an error margin of six per cent.
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Submitted 15 February, 2025;
originally announced February 2025.
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Thermodynamics of multi-colored loop models in three dimensions
Authors:
Soumya Kanti Ganguly,
Sumanta Mukherjee,
Chandan Dasgupta
Abstract:
We study order-disorder transitions in three-dimensional \textsl{multi-colored} loop models using Monte Carlo simulations. We show that the nature of the transition is intimately related to the nature of the loops. The symmetric loops undergo a first order phase transition, while the non-symmetric loops show a second-order transition. The critical exponents for the non-symmetric loops are calculat…
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We study order-disorder transitions in three-dimensional \textsl{multi-colored} loop models using Monte Carlo simulations. We show that the nature of the transition is intimately related to the nature of the loops. The symmetric loops undergo a first order phase transition, while the non-symmetric loops show a second-order transition. The critical exponents for the non-symmetric loops are calculated. In three dimensions, the regular loop model with no interactions is dual to the XY model. We argue that, due to interactions among the colors, the specific heat exponent is found to be different from that of the regular loop model. The continuous nature of the transition is altered to a discontinuous one due to the strong inter-color interactions.
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Submitted 13 February, 2025;
originally announced February 2025.
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Persistent current in a non-Hermitian Hatano-Nelson ring: Disorder-induced amplification
Authors:
Sudin Ganguly,
Santanu K. Maiti
Abstract:
Non-reciprocal hopping induces a synthetic magnetic flux which leads to the non-Hermitian Aharonov-Bohm effect. Since non-Hermitian Hamiltonians possess both real and imaginary eigenvalues, this effect allows the observation of real and imaginary persistent currents in a ring threaded by the synthetic flux. Motivated by this, we investigate the behavior of persistent currents in a disordered Hatan…
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Non-reciprocal hopping induces a synthetic magnetic flux which leads to the non-Hermitian Aharonov-Bohm effect. Since non-Hermitian Hamiltonians possess both real and imaginary eigenvalues, this effect allows the observation of real and imaginary persistent currents in a ring threaded by the synthetic flux. Motivated by this, we investigate the behavior of persistent currents in a disordered Hatano-Nelson ring with anti-Hermitian intradimer hopping. The disorder is diagonal and we explore three distinct models, namely the Aubry-André-Harper model, the Fibonacci model, both representing correlated disorder, and an uncorrelated (random) model. We conduct a detailed analysis of the energy spectrum and examine the real and imaginary parts of the persistent current under various conditions such as different ring sizes and filling factors. Interestingly, we find that real and imaginary persistent currents exhibit amplification in the presence of correlated disorder. This amplification is also observed in certain individual random configurations but vanishes after configuration averaging. Additionally, we observe both diamagnetic and paramagnetic responses in the current behavior and investigate aspects of persistent currents in the absence of disorder that have not been previously explored. Interestingly, we find that the intradimer bonds host only imaginary currents, while the interdimer bonds carry only real currents. The bulk-boundary correspondence is investigated by analyzing the existence of localized edge states under the open boundary condition.
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Submitted 29 April, 2025; v1 submitted 19 December, 2024;
originally announced December 2024.
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Vibrational similarities in jamming-unjamming of polycrystalline and disordered granular packings
Authors:
Juan C. Petit,
Saswati Ganguly,
Matthias Sperl
Abstract:
We investigate the vibrational properties of polycrystalline monodisperse and disordered bidisperse granular packings during jamming and unjamming using discrete element method simulations. Both systems deviate from Debye scaling at low frequencies $(ω)$, but only bidisperse packings exhibit a low-$ω$ plateau. The low $ω$ exponent ($α$) in bidisperse packings evolves smoothly from zero (plateau) t…
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We investigate the vibrational properties of polycrystalline monodisperse and disordered bidisperse granular packings during jamming and unjamming using discrete element method simulations. Both systems deviate from Debye scaling at low frequencies $(ω)$, but only bidisperse packings exhibit a low-$ω$ plateau. The low $ω$ exponent ($α$) in bidisperse packings evolves smoothly from zero (plateau) to near one (Debye scaling) with increasing packing fraction, whereas in polycrystalline packings, it changes discontinuously near jamming/unjamming, due to the nature of the contact network rearrangements. Despite structural modifications during the compression-decompression cycle, the exponent remains unchanged at the same distance from jamming density, regardless of the history. Nonaffine displacements and contact orientational order further confirm that structural features that impact low-$ω$ vibrational states and, hence, mechanical properties are largely restored upon decompression, reinforcing vibrational similarities between jamming and unjamming states.
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Submitted 19 June, 2025; v1 submitted 5 November, 2024;
originally announced November 2024.
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Gaussian to log-normal transition for independent sets in a percolated hypercube
Authors:
Mriganka Basu Roy Chowdhury,
Shirshendu Ganguly,
Vilas Winstein
Abstract:
Independent sets in graphs, i.e., subsets of vertices where no two are adjacent, have long been studied, for instance as a model of hard-core gas. The $d$-dimensional hypercube, $\{0,1\}^d$, with the nearest neighbor structure, has been a particularly appealing choice for the base graph, owing in part to its many symmetries. Results go back to the work of Korshunov and Sapozhenko who proved sharp…
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Independent sets in graphs, i.e., subsets of vertices where no two are adjacent, have long been studied, for instance as a model of hard-core gas. The $d$-dimensional hypercube, $\{0,1\}^d$, with the nearest neighbor structure, has been a particularly appealing choice for the base graph, owing in part to its many symmetries. Results go back to the work of Korshunov and Sapozhenko who proved sharp results on the count of such sets as well as structure theorems for random samples drawn uniformly. Of much interest is the behavior of such Gibbs measures in the presence of disorder. In this direction, Kronenberg and Spinka [KS] initiated the study of independent sets in a random subgraph of the hypercube obtained by considering an instance of bond percolation with probability $p$. Relying on tools from statistical mechanics they obtained a detailed understanding of the moments of the partition function, say $\mathcal{Z}$, of the hard-core model on such random graphs and consequently deduced certain fluctuation information, as well as posed a series of interesting questions. In particular, they showed in the uniform case that there is a natural phase transition at $p=2/3$ where $\mathcal{Z}$ transitions from being concentrated for $p>2/3$ to not concentrated at $p=2/3$.
In this article, developing a probabilistic framework, as well as relying on certain cluster expansion inputs from [KS], we present a detailed picture of both the fluctuations of $\mathcal{Z}$ as well as the geometry of a randomly sampled independent set. In particular, we establish that $\mathcal{Z}$, properly centered and scaled, converges to a standard Gaussian for $p>2/3$, and to a sum of two i.i.d. log-normals at $p=2/3$. A particular step in the proof which could be of independent interest involves a non-uniform birthday problem for which collisions emerge at $p=2/3$.
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Submitted 9 October, 2024;
originally announced October 2024.
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Thermolectricity in irradiated bilayer graphene flakes
Authors:
Cynthia Ihuoma Osuala,
Tanu Choudhary,
Raju K. Biswas,
Sudin Ganguly,
Santanu K. Maiti
Abstract:
We present a comprehensive study on enhancing the thermoelectric (TE) performance of bilayer graphene (BLG) through irradiation with arbitrarily polarized light, focusing on $AA$- and $AB$-stacked configurations with zigzag edges. Utilizing a combination of tight-binding theory and density functional theory (DFT), we systematically analyze the impact of light irradiation on electronic and phononic…
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We present a comprehensive study on enhancing the thermoelectric (TE) performance of bilayer graphene (BLG) through irradiation with arbitrarily polarized light, focusing on $AA$- and $AB$-stacked configurations with zigzag edges. Utilizing a combination of tight-binding theory and density functional theory (DFT), we systematically analyze the impact of light irradiation on electronic and phononic transport properties. Light irradiation alters the electronic hopping parameters, creating an asymmetric transmission function, which significantly increases the Seebeck coefficient, thereby boosting the overall {\it figure of merit} (FOM). For the phononic contribution, DFT calculations reveal that $AB$-stacked BLG exhibits lower lattice thermal conductivity compared to $AA$-stacked, attributed to enhanced anharmonic scattering and phonon group velocity. The combined analysis shows that FOM exceeds unity in both stacking types, with notable improvements near the irradiation-induced gap. Additionally, we explore the dependence of FOM on the system dimensions and temperature, demonstrating that light-irradiated BLG holds great promise for efficient thermoelectric energy conversion and waste heat recovery. Our results show favorable responses over a wide range of irradiation parameters. These findings provide crucial insights into optimizing BLG for advanced TE applications through light-induced modifications.
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Submitted 24 September, 2024; v1 submitted 16 September, 2024;
originally announced September 2024.
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Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory
Authors:
Md Golam Morshed,
Hamed Vakili,
Mohammad Nazmus Sakib,
Samiran Ganguly,
Mircea R. Stan,
Avik W. Ghosh
Abstract:
We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages the TI's high charge-to-spin conversion efficiency coupled with the piezo-induced strain-based gating mechanism for low-power in-memory computing. The piezo-in…
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We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages the TI's high charge-to-spin conversion efficiency coupled with the piezo-induced strain-based gating mechanism for low-power in-memory computing. The piezo-induced strain effectively modulates the conductivity of the topological surface state (TSS) by altering the gating magnet's magnetization from out-to-in-plane, facilitating the storage magnet's spin-orbit torque (SOT) switching. Through comprehensive coupled stochastic Landau-Lifshitz-Gilbert (LLG) simulations, we explore the device dynamics, anisotropy-stress phase space for switching, and write conditions and demonstrate a significant reduction in energy dissipation compared to conventional heavy metal (HM)-based SOT switching. Additionally, we project the energy consumption for in-memory Boolean operations (AND and OR). Our findings suggest the promise of the STI-SOTRAM for low-power, high-performance edge computing.
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Submitted 30 July, 2024;
originally announced July 2024.
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Connecting physics to systems with modular spin-circuits
Authors:
Kemal Selcuk,
Saleh Bunaiyan,
Nihal Sanjay Singh,
Shehrin Sayed,
Samiran Ganguly,
Giovanni Finocchio,
Supriyo Datta,
Kerem Y. Camsari
Abstract:
An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate circuit models for $\sf X$ that are compatible with standard models for CMOS-based circuits and systems. In this perspective, we present physics-based, experim…
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An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate circuit models for $\sf X$ that are compatible with standard models for CMOS-based circuits and systems. In this perspective, we present physics-based, experimentally benchmarked modular circuit models that can be used to evaluate a class of CMOS + $\sf X$ systems, where $\sf X$ denotes magnetic and spintronic materials and phenomena. This class of materials is particularly challenging because they go beyond conventional charge-based phenomena and involve the spin degree of freedom which involves non-trivial quantum effects. Starting from density matrices $-$ the central quantity in quantum transport $-$ using well-defined approximations, it is possible to obtain spin-circuits that generalize ordinary circuit theory to 4-component currents and voltages (1 for charge and 3 for spin). With step-by-step examples that progressively become more complex, we illustrate how the spin-circuit approach can be used to start from the physics of magnetism and spintronics to enable accurate system-level evaluations. We believe the core approach can be extended to include other quantum degrees of freedom like valley and pseudospins starting from corresponding density matrices.
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Submitted 10 September, 2024; v1 submitted 30 April, 2024;
originally announced April 2024.
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Reconfigurable Stochastic Neurons Based on Strain Engineered Low Barrier Nanomagnets
Authors:
Rahnuma Rahman,
Samiran Ganguly,
Supriyo Bandyopadhyay
Abstract:
Stochastic neurons are efficient hardware accelerators for solving a large variety of combinatorial optimization problems. "Binary" stochastic neurons (BSN) are those whose states fluctuate randomly between two levels +1 and -1, with the probability of being in either level determined by an external bias. "Analog" stochastic neurons (ASNs), in contrast, can assume any state between the two levels…
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Stochastic neurons are efficient hardware accelerators for solving a large variety of combinatorial optimization problems. "Binary" stochastic neurons (BSN) are those whose states fluctuate randomly between two levels +1 and -1, with the probability of being in either level determined by an external bias. "Analog" stochastic neurons (ASNs), in contrast, can assume any state between the two levels randomly (hence "analog") and can perform analog signal processing. They may be leveraged for such tasks as temporal sequence learning, processing and prediction. Both BSNs and ASNs can be used to build efficient and scalable neural networks. Both can be implemented with low (potential energy) barrier nanomagnets (LBMs) whose random magnetization orientations encode the binary or analog state variables. The difference between them is that the potential energy barrier in a BSN LBM, albeit low, is much higher than that in an ASN LBM. As a result, a BSN LBM has a clear double well potential profile, which makes its magnetization orientation assume one of two orientations at any time, resulting in the binary behavior. ASN nanomagnets, on the other hand, hardly have any energy barrier at all and hence lack the double well feature. That makes their magnetizations fluctuate in an analog fashion. Hence, one can reconfigure an ASN to a BSN, and vice-versa, by simply raising and lowering the energy barrier. If the LBM is magnetostrictive, then this can be done with local (electrically generated) strain. Such a reconfiguration capability heralds a powerful field programmable architecture for a p-computer, and the energy cost for this type of reconfiguration is miniscule.
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Submitted 1 April, 2024; v1 submitted 8 February, 2024;
originally announced February 2024.
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Switching dynamics and improved efficiency of free-standing antiferroelectric capacitors
Authors:
Umair Saeed,
David Pesquera,
Ying Liu,
Ignasi Fina,
Saptam Ganguly,
Jose Santiso,
Jessica Padilla,
Jose Manuel Caicedo Roque,
Xiaozhou Liao,
Gustau Catalan
Abstract:
We report the switching dynamics of antiferroelectric Lead Zirconate (PbZrO3) free standing capacitors compared to their epitaxial counterparts. Frequency dependence of hysteresis indicates that freestanding capacitors exhibit a lower dispersion of switching fields, lower residual polarization, and faster switching response as compared to epitaxially-clamped capacitors. As a consequence, freestand…
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We report the switching dynamics of antiferroelectric Lead Zirconate (PbZrO3) free standing capacitors compared to their epitaxial counterparts. Frequency dependence of hysteresis indicates that freestanding capacitors exhibit a lower dispersion of switching fields, lower residual polarization, and faster switching response as compared to epitaxially-clamped capacitors. As a consequence, freestanding capacitor membranes exhibit better energy storage density and efficiency.
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Submitted 14 December, 2023;
originally announced December 2023.
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Critical analysis of multiple reentrant localization in an antiferromagnetic helix with transverse electric field: Hopping dimerization-free scenario
Authors:
Sudin Ganguly,
Sourav Chattopadhyay,
Kallol Mondal,
Santanu K. Maiti
Abstract:
Reentrant localization (RL), a recently prominent phenomenon, traditionally links to the interplay of staggered correlated disorder and hopping dimerization, as indicated by prior research. Contrary to this paradigm, our present study demonstrates that hopping dimerization is not a pivotal factor in realizing RL. Considering a helical magnetic system with antiferromagnetic ordering, we uncover spi…
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Reentrant localization (RL), a recently prominent phenomenon, traditionally links to the interplay of staggered correlated disorder and hopping dimerization, as indicated by prior research. Contrary to this paradigm, our present study demonstrates that hopping dimerization is not a pivotal factor in realizing RL. Considering a helical magnetic system with antiferromagnetic ordering, we uncover spin-dependent RL at multiple energy regions, in the {\em absence} of hopping dimerization. This phenomenon persists even in the thermodynamic limit. The correlated disorder in the form of Aubry-André-Harper model is introduced by applying a transverse electric field to the helical system, circumventing the use of traditional substitutional disorder. We conduct a finite-size scaling analysis on the observed reentrant phases to identify critical points, determine associated critical exponents, and examine the scaling behavior linked to localization transitions. Additionally, we explore the parameter space to identify the conditions under which the reentrant phases occur. Described within a tight-binding framework, present work provides a novel outlook on RL, highlighting the crucial role of electric field, antiferromagnetic ordering, and the helicity of the geometry. Potential applications and experimental realizations of RL phenomena are also explored.
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Submitted 29 November, 2024; v1 submitted 5 December, 2023;
originally announced December 2023.
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Phenomenon of multiple reentrant localization in a double-stranded helix with transverse electric field
Authors:
Sudin Ganguly,
Suparna Sarkar,
Kallol Mondal,
Santanu K. Maiti
Abstract:
The present work explores the potential for observing multiple reentrant localization behavior in a double-stranded helical (DSH) system, extending beyond the conventional nearest-neighbor hopping interaction. The DSH system is considered to have hopping dimerization in each strand, while also being subjected to a transverse electric field. The inclusion of an electric field serves the dual purpos…
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The present work explores the potential for observing multiple reentrant localization behavior in a double-stranded helical (DSH) system, extending beyond the conventional nearest-neighbor hopping interaction. The DSH system is considered to have hopping dimerization in each strand, while also being subjected to a transverse electric field. The inclusion of an electric field serves the dual purpose of inducing quasiperiodic disorder and strand-wise staggered site energies. Two reentrant localization regions are identified: one exhibiting true extended behavior in the thermodynamic limit, while the second region shows quasi-extended characteristics with partial spreading within the helix. The DSH system exhibits three distinct single-particle mobility edges linked to localization transitions present in the system. The analysis in this study involves examining various parameters such as the single-particle energy spectrum, inverse participation ratio, local probability amplitude, and more. Our proposal, combining achievable hopping dimerization and induced correlated disorder, presents a unique opportunity to study phenomenon of reentrant localization, generating significant research interest.
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Submitted 10 July, 2023; v1 submitted 26 June, 2023;
originally announced June 2023.
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Thermoelectric phenomena in an antiferromagnetic helix: Role of electric field
Authors:
Kallol Mondal,
Sudin Ganguly,
Santanu K. Maiti
Abstract:
The charge and spin-dependent thermoelectric responses are investigated on a single-helical molecule possessing a collinear antiferromagnetic spin arrangement with zero net magnetization in the presence of a transverse electric field. Both the short and long-range hopping scenarios are considered, which mimic biological systems like single-stranded DNA and $α$-protein molecules. A non-equilibrium…
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The charge and spin-dependent thermoelectric responses are investigated on a single-helical molecule possessing a collinear antiferromagnetic spin arrangement with zero net magnetization in the presence of a transverse electric field. Both the short and long-range hopping scenarios are considered, which mimic biological systems like single-stranded DNA and $α$-protein molecules. A non-equilibrium Green's function formalism is employed following the Landauer-Buttiker prescription to study the thermoelectric phenomena. The detailed dependence of the basic thermoelectric quantities on helicity, electric field, temperature etc., are elaborated on, and the underlying physics is explained accordingly. The charge and spin \textit{figure of merits} are computed and compared critically. For a more accurate estimation, the phononic contribution towards thermal conductance is also included. The present proposition shows a favorable spin-dependent thermoelectric response compared to the charge counterpart.
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Submitted 9 May, 2023;
originally announced May 2023.
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Photostrictive actuators based on freestanding ferroelectric membranes
Authors:
Saptam Ganguly,
David Pesquera,
Daniel Moreno Garcia,
Umair Saeed,
Nona Mirzamohammadi,
José Santiso,
Jessica Padilla,
José Manuel Caicedo Roque,
Claire Laulhé,
Felisa Berenguer,
Luis Guillermo Villanueva,
Gustau Catalan
Abstract:
Complex oxides offer a wide range of functional properties, and recent advances in fabrication of freestanding membranes of these oxides are adding new mechanical degrees of freedom to this already rich functional ecosystem. Here, we demonstrate photoactuation in freestanding thin film resonators of ferroelectric Barium Titanate (BaTiO3) and paraelectric Strontium Titanate (SrTiO3). The free-stand…
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Complex oxides offer a wide range of functional properties, and recent advances in fabrication of freestanding membranes of these oxides are adding new mechanical degrees of freedom to this already rich functional ecosystem. Here, we demonstrate photoactuation in freestanding thin film resonators of ferroelectric Barium Titanate (BaTiO3) and paraelectric Strontium Titanate (SrTiO3). The free-standing films, transferred onto perforated supports, act as nano-drums, oscillating at their natural resonance frequency when illuminated by a frequency-modulated laser. The light-induced deflections in the ferroelectric BaTiO3 membranes are two orders of magnitude larger than in the paraelectric SrTiO3 ones. Time-resolved X-ray micro-diffraction under illumination and temperature-dependent and holographic interferometry provide combined evidence for the photostrictive strain in BaTiO3 originating from partial screening of ferroelectric polarization by photo-excited carriers, which decreases the tetragonality of the unit cell. These findings showcase the potential of photostrictive freestanding ferroelectric films as wireless actuators operated by light.
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Submitted 24 March, 2024; v1 submitted 4 May, 2023;
originally announced May 2023.
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Electrical analogue of one-dimensional and quasi-one-dimensional Aubry-André-Harper lattices
Authors:
Sudin Ganguly,
Santanu K. Maiti
Abstract:
The present work discusses the possibility to realize correlated disorder in electrical circuits and studies the localization phenomena in terms of two-port impedance. The correlated disorder is incorporated using the Aubry-André-Harper (AAH) model. One-dimensional and quasi-one-dimensional AAH structures are explored and directly mapped with their tight-binding analogues. Transitions from the hig…
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The present work discusses the possibility to realize correlated disorder in electrical circuits and studies the localization phenomena in terms of two-port impedance. The correlated disorder is incorporated using the Aubry-André-Harper (AAH) model. One-dimensional and quasi-one-dimensional AAH structures are explored and directly mapped with their tight-binding analogues. Transitions from the high-conducting phase to the low-conducting one are observed for the circuits.
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Submitted 28 March, 2023;
originally announced March 2023.
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Properties of the non-Hermitian SSH model: role of PT-symmetry
Authors:
Dipendu Halder,
Sudin Ganguly,
Saurabh Basu
Abstract:
The present work addresses the distinction between the topological properties of PT symmetric and non-PT symmetric scenarios for the non-Hermitian Su-Schrieffer-Heeger (SSH) model. The non-PT symmetric case is represented by non-reciprocity in both the inter- and the intra-cell hopping amplitudes, while the one with PT symmetry is modeled by a complex on-site staggered potential. In particular, we…
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The present work addresses the distinction between the topological properties of PT symmetric and non-PT symmetric scenarios for the non-Hermitian Su-Schrieffer-Heeger (SSH) model. The non-PT symmetric case is represented by non-reciprocity in both the inter- and the intra-cell hopping amplitudes, while the one with PT symmetry is modeled by a complex on-site staggered potential. In particular, we study the loci of the exceptional points, the winding numbers, band structures, and explore the breakdown of bulk-boundary correspondence (BBC). We further study the interplay of the dimerization strengths on the observables for these cases. The non-PT symmetric case denotes a more familiar situation, where the winding number abruptly changes by a half-integer through tuning of the non-reciprocity parameters, and demonstrates a complete breakdown of BBC, thereby showing the non-Hermitian skin effect. The topological nature of the PT symmetric case appears to follow closely to its Hermitian analogue, except that it shows unbroken (broken) regions with complex (purely real) energy spectra, while another variant of the winding number exhibits a continuous behavior as a function of the strength of the potential, while the conventional BBC is preserved.
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Submitted 21 December, 2022; v1 submitted 28 September, 2022;
originally announced September 2022.
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Transport characteristics of a $\mathcal{PT}$-symmetric non-Hermitian system: Effect of environmental interaction
Authors:
Sudin Ganguly,
Souvik Roy,
Santanu K. Maiti
Abstract:
The environmental influence is inevitable but often ignored in the study of electronic transport properties of small-scale systems. Such an environment-mediated interaction can generally be described by a parity-time symmetric non-Hermitian system with a balanced distribution of physical gain and loss. It is quite known in the literature that along with the conventional junction current, another c…
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The environmental influence is inevitable but often ignored in the study of electronic transport properties of small-scale systems. Such an environment-mediated interaction can generally be described by a parity-time symmetric non-Hermitian system with a balanced distribution of physical gain and loss. It is quite known in the literature that along with the conventional junction current, another current called bias-driven circular current can be established in a loop geometry depending upon the junction configuration. This current, further, induces a strong magnetic field that can even reach to few Tesla. What will happen to these quantities when the system interacts with its surrounding environment? Would it exhibit a detrimental response? We address such issues considering a two-terminal ring geometry where the junction setup is described within a tight-binding framework. All the transport quantities are evaluated using the standard Green's function formalism based on the Landauer-Büttiker approach.
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Submitted 7 July, 2022;
originally announced July 2022.
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Strain-induced thermoelectricity in pentacene
Authors:
Kallol Mondal,
Sudin Ganguly,
Santanu K. Maiti
Abstract:
The present work discusses a non-synthetic strategy to achieve a favorable thermoelectric response in pentacene via strain. It is found that a uni-axial strain is capable of inducing spatial anisotropy in the molecule. As a result, the transmission spectrum becomes highly asymmetric under a particular strained scenario, which is the primary requirement to get a favorable thermoelectric response. D…
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The present work discusses a non-synthetic strategy to achieve a favorable thermoelectric response in pentacene via strain. It is found that a uni-axial strain is capable of inducing spatial anisotropy in the molecule. As a result, the transmission spectrum becomes highly asymmetric under a particular strained scenario, which is the primary requirement to get a favorable thermoelectric response. Different thermoelectric quantities are computed for the strain-induced pentacene using Green's function formalism following the Landauer-Buttiker prescription. Various scenarios are considered to make the present work more realistic, such as the effects of substrate, coupling strength between the molecule and electrodes, dangling bonds, etc. Such a scheme to enhance the thermoelectric performance in pentacene is technologically intriguing and completely new to the best of our knowledge.
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Submitted 6 June, 2022;
originally announced June 2022.
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Continuum mechanics for the elastic properties of crystals: Microscopic approach based on projection-operator formalism
Authors:
Florian Miserez,
Saswati Ganguly,
Rudolf Haussmann,
Matthias Fuchs
Abstract:
We present a microscopic derivation of the laws of continuum mechanics of nonideal ordered solids including dissipation, defect diffusion, and heat transport. Starting point is the classical many-body Hamiltonian. The approach relies on the Zwanzig-Mori projection operator formalism to connect microscopic fluctuations to thermodynamic derivatives and transport coefficients. Conservation laws and s…
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We present a microscopic derivation of the laws of continuum mechanics of nonideal ordered solids including dissipation, defect diffusion, and heat transport. Starting point is the classical many-body Hamiltonian. The approach relies on the Zwanzig-Mori projection operator formalism to connect microscopic fluctuations to thermodynamic derivatives and transport coefficients. Conservation laws and spontaneous symmetry breaking, implemented via Bogoliubov's inequality, determine the selection of the slow variables. Density fluctuations in reciprocal space encode the displacement field and the defect concentration. Isothermal and adiabatic elastic constants are obtained from equilibrium correlations, while transport coefficients are given as Green-Kubo formulae, providing the basis for their measurement in atomistic simulations or colloidal experiments. The approach and results are compared to others from the literature.
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Submitted 17 May, 2022;
originally announced May 2022.
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Low power In Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures
Authors:
Hamed Vakili,
Samiran Ganguly,
George J. de Coster,
Mahesh R. Neupane,
Avik W. Ghosh
Abstract:
The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability…
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The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability of the TI Dirac cone gap helps reduce its sub-threshold swing. By exploiting this reciprocal behaviour, we can use two FM/3DTI heterostructures to design a 1-Transistor 1-magnetic tunnel junction random access memory unit (1T1MTJ RAM) for an ultra low power Processing-in-Memory (PiM) architecture. Our calculation involves combining the Fokker-Planck equation with the Non-equilibrium Green Function (NEGF) based flow of conduction electrons and Landau-Lifshitz-Gilbert (LLG) based dynamics of magnetization. Our combined approach allows us to connect device performance metrics with underlying material parameters, which can guide proposed experimental and fabrication efforts.
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Submitted 18 December, 2022; v1 submitted 27 March, 2022;
originally announced March 2022.
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Enhanced current rectification in graphene nanoribbons: Effects of geometries and orientations of nanopores
Authors:
Joydeep Majhi,
Sudin Ganguly,
Santanu K. Maiti
Abstract:
We discuss the possibility of getting rectification operation in graphene nanoribbon (GNR). For a system to be a rectifier, it must be physically asymmetric and we induce the asymmetry in GNR by introducing nanopores. The rectification properties are discussed for differently structured nanopores. We find that shape and orientation of the nanopores are critical and sensitive to the degree of curre…
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We discuss the possibility of getting rectification operation in graphene nanoribbon (GNR). For a system to be a rectifier, it must be physically asymmetric and we induce the asymmetry in GNR by introducing nanopores. The rectification properties are discussed for differently structured nanopores. We find that shape and orientation of the nanopores are critical and sensitive to the degree of current rectification. As the choice of Fermi energy is crucial for obtaining significant current rectification, explicit dependence of Fermi energy on the degree of current rectification is also studied for a particular shape of the nanopore. Finally, the role of nanopore size and different spatial distributions of the electrostatic potential profile across the GNR are discussed. Given the simplicity of the proposed method and promising results, the present proposition may lead to a new route of getting current rectification in different kinds of materials where nanopores can be formed selectively.
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Submitted 9 December, 2021;
originally announced December 2021.
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Collapse and Diffusion in Harmonic Activation and Transport
Authors:
Jacob Calvert,
Shirshendu Ganguly,
Alan Hammond
Abstract:
For an $n$-element subset $U$ of $\mathbb{Z}^2$, select $x$ from $U$ according to harmonic measure from infinity, remove $x$ from $U$, and start a random walk from $x$. If the walk leaves from $y$ when it first enters $U$, add $y$ to $U$. Iterating this procedure constitutes the process we call Harmonic Activation and Transport (HAT).
HAT exhibits a phenomenon we refer to as collapse: informally…
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For an $n$-element subset $U$ of $\mathbb{Z}^2$, select $x$ from $U$ according to harmonic measure from infinity, remove $x$ from $U$, and start a random walk from $x$. If the walk leaves from $y$ when it first enters $U$, add $y$ to $U$. Iterating this procedure constitutes the process we call Harmonic Activation and Transport (HAT).
HAT exhibits a phenomenon we refer to as collapse: informally, the diameter shrinks to its logarithm over a number of steps which is comparable to this logarithm. Collapse implies the existence of the stationary distribution of HAT, where configurations are viewed up to translation, and the exponential tightness of diameter at stationarity. Additionally, collapse produces a renewal structure with which we establish that the center of mass process, properly rescaled, converges in distribution to two-dimensional Brownian motion.
To characterize the phenomenon of collapse, we address fundamental questions about the extremal behavior of harmonic measure and escape probabilities. Among $n$-element subsets of $\mathbb{Z}^2$, what is the least positive value of harmonic measure? What is the probability of escape from the set to a distance of, say, $d$? Concerning the former, examples abound for which the harmonic measure is exponentially small in $n$. We prove that it can be no smaller than exponential in $n \log n$. Regarding the latter, the escape probability is at most the reciprocal of $\log d$, up to a constant factor. We prove it is always at least this much, up to an $n$-dependent factor.
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Submitted 26 October, 2021;
originally announced October 2021.
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Random metric geometries on the plane and Kardar-Parisi-Zhang universality
Authors:
Shirshendu Ganguly
Abstract:
This is the article with the same title which is scheduled to appear in the January 2022 issue of the AMS Notices, with additional references which could not be provided in the accepted version due to space constraints. The figures in this article were made collaboratively with Milind Hegde.
This is the article with the same title which is scheduled to appear in the January 2022 issue of the AMS Notices, with additional references which could not be provided in the accepted version due to space constraints. The figures in this article were made collaboratively with Milind Hegde.
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Submitted 21 October, 2021;
originally announced October 2021.
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Anatomy of nanomagnetic switching at a 3D Topological Insulator PN junction
Authors:
Hamed Vakili,
Yunkun Xie,
Samiran Ganguly,
Avik W. Ghosh
Abstract:
A P-N junction engineered within a Dirac cone system acts as a gate tunable angular filter based on Klein tunneling. For a 3D topological insulator with substantial bandgap, such a filter can produce a charge-to-spin conversion due to the dual effects of spin-momentum locking and momentum filtering. We analyze how spins filtered at an in-plane topological insulator PN junction (TIPNJ) interact wit…
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A P-N junction engineered within a Dirac cone system acts as a gate tunable angular filter based on Klein tunneling. For a 3D topological insulator with substantial bandgap, such a filter can produce a charge-to-spin conversion due to the dual effects of spin-momentum locking and momentum filtering. We analyze how spins filtered at an in-plane topological insulator PN junction (TIPNJ) interact with a nanomagnet, and argue that the intrinsic charge-to-spin conversion does not translate to an external gain if the nanomagnet also acts as the source contact. Regardless of the nanomagnet's position, the spin torque generated on the TIPNJ is limited by the surface current density, which in turn is limited by bulk band gap. {Using quantum kinetic models, we calculate the spatially varying spin potential and quantify the localization of the current vs applied bias}. Additionally, with the magnetodynamic simulation of a soft nanomagnet, we show that the PN junction can offer a critical gate tunability in the switching probability of the nanomagnet, with potential applications in probabilistic neuromorphic computing.
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Submitted 19 November, 2021; v1 submitted 6 October, 2021;
originally announced October 2021.
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Spin-dependent transport in a driven noncolinear antiferromagnetic fractal network
Authors:
Kallol Mondal,
Sudin Ganguly,
Santanu K. Maiti
Abstract:
Noncolinear magnetic texture breaks the spin-sublattice symmetry which gives rise to a spin-splitting effect. Inspired by this, we study the spin-dependent transport properties in a noncolinear antiferromagnetic fractal structure, namely, the Sierpinski Gasket (SPG) triangle. We find that though the spin-up and spin-down currents are different, the degree of spin polarization is too weak. Finally,…
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Noncolinear magnetic texture breaks the spin-sublattice symmetry which gives rise to a spin-splitting effect. Inspired by this, we study the spin-dependent transport properties in a noncolinear antiferromagnetic fractal structure, namely, the Sierpinski Gasket (SPG) triangle. We find that though the spin-up and spin-down currents are different, the degree of spin polarization is too weak. Finally, we come up with a proposal, where the degree of spin polarization can be enhanced significantly in the presence of a time-periodic driving field. Such a prescription of getting spin-filtering effect from an unpolarized source in a fractal network is completely new to the best of our knowledge. Starting from a higher generation of SPG to smaller ones, the precise dependencies of driving field parameters, spin-dependent scattering strength, interface sensitivity on spin polarization are critically investigated. The spatial distribution of spin-resolved bond current density is also explored. Interestingly, our proposed setup exhibits finite spin polarization for different spin-quantization axes. Arbitrarily polarized light is considered and its effect is incorporated through Floquet-Bloch ansatz. All the spin-resolved transport quantities are computed using Green's function formalism following the Landauer-Büttiker prescription. The present work brings forth new insights into spintronic properties of noncolinear antiferromagnetic SPG and should entice the AFM spintronic community to explore other fractal structures with the possibility of unconventional features.
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Submitted 27 September, 2021;
originally announced September 2021.
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A driven fractal network: Possible route to efficient thermoelectric application
Authors:
Kallol Mondal,
Sudin Ganguly,
Santanu K. Maiti
Abstract:
An essential attribute of many fractal structures is self-similarity. A Sierpinski gasket (SPG) triangle is a promising example of a fractal lattice that exhibits localized energy eigenstates. In the present work, for the first time we establish that a mixture of both extended and localized energy eigenstates can be generated yeilding mobility edges at multiple energies in presence of a time-perio…
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An essential attribute of many fractal structures is self-similarity. A Sierpinski gasket (SPG) triangle is a promising example of a fractal lattice that exhibits localized energy eigenstates. In the present work, for the first time we establish that a mixture of both extended and localized energy eigenstates can be generated yeilding mobility edges at multiple energies in presence of a time-periodic driving field. We obtain several compelling features by studying the transmission and energy eigenvalue spectra. As a possible application of our new findings, different thermoelectric properties are discussed, such as electrical conductance, thermopower, thermal conductance due to electrons and phonons. We show that our proposed method indeed exhibits highly favorable thermoelectric performance. The time-periodic driving field is assumed through an arbitrarily polarized light, and its effect is incorporated via Floquet-Bloch ansatz. All transport phenomena are worked out using Green's function formalism following the Landauer-Büttiker prescription.
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Submitted 27 September, 2021;
originally announced September 2021.
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Elasticity in crystals with high density of local defects : insights from ultra-soft colloids
Authors:
Saswati Ganguly,
Gaurav Prakash Shrivastav,
Shang-Chun Lin,
Johannes Häring,
Rudolf Haussmann,
Gerhard Kahl,
Martin Oettel,
Matthias Fuchs
Abstract:
In complex crystals close to melting or at finite temperatures, different types of defects are ubiquitous and their role becomes relevant in the mechanical response of these solids. Conventional elasticity theory fails to provide a microscopic basis to include and account for the motion of point-defects in an otherwise ordered crystalline structure. We study the elastic properties of a point-defec…
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In complex crystals close to melting or at finite temperatures, different types of defects are ubiquitous and their role becomes relevant in the mechanical response of these solids. Conventional elasticity theory fails to provide a microscopic basis to include and account for the motion of point-defects in an otherwise ordered crystalline structure. We study the elastic properties of a point-defect rich crystal within a first-principles theoretical framework derived from microscopic equations of motion. This framework allows us to make specific predictions pertaining to the mechanical properties which we can validate through deformation experiments performed in Molecular Dynamics simulations.
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Submitted 13 August, 2021;
originally announced August 2021.
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A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes
Authors:
Sheikh Z. Ahmed,
Samiran Ganguly,
Yuan Yuan,
Jiyuan Zheng,
Yaohua Tan,
Joe C. Campbell,
Avik W. Ghosh
Abstract:
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibr…
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III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibrated to ab-initio Density Functional Theory (DFT) and Monte Carlo (MC) methods. Using this approach, we can accurately capture the physical characteristics of these APDs in integrated photonics circuit simulations.
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Submitted 9 February, 2021;
originally announced February 2021.
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Computing and Memory Technologies based on Magnetic Skyrmions
Authors:
Hamed Vakili,
Wei Zhou,
Chung T Ma,
Md Golam Morshed,
Mohammad Nazmus Sakib,
Tim Hartnett,
Jun-Wen Xu,
Samiran Ganguly,
Kai Litzius,
Yassine Quessab,
Prasanna Balachandran,
Mircea Stan,
S J Poon,
Andrew D. Kent,
Geoffrey Beach,
Avik W. Ghosh
Abstract:
Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast,all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The topological winding of skyrmion spins affects their overall lifetime, energetics and dynamical behavior. In this review, we discuss skyrmionics in the context of…
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Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast,all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The topological winding of skyrmion spins affects their overall lifetime, energetics and dynamical behavior. In this review, we discuss skyrmionics in the context of the present day solid state memory landscape, and show how their size, stability and mobility can be controlled by material engineering, as well as how they can be nucleated and detected. Ferrimagnetsnear their compensation points are important candidates for this application, leading to detailed exploration of amorphous CoGd as well as the study of emergent materials such as Mn$_4$N and Inverse Heusler alloys. Along with material properties, geometrical parameters such as film thickness, defect density and notches can be used to tune skyrmion properties, such as their size and stability. Topology, however, can be a double-edged sword, especially for isolated metastable skyrmions, as it brings stability at the cost of additional damping and deflective Magnus forces compared to domain walls. Skyrmion deformation in response to forces also makes them intrinsically slower than domain walls. We explore potential analog applications of skyrmions, including temporal memory at low density, and decorrelator for stochastic computing at a higher density that capitalizes on their interactions. We summarize the main challenges to achieve a skyrmionics technology, including maintaining positional stability with very high accuracy, electrical readout, especially for small ferrimagnetic skyrmions, deterministic nucleation and annihilation, and overall integration with digital circuits with the associated circuit overhead.
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Submitted 3 June, 2021; v1 submitted 25 January, 2021;
originally announced January 2021.
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Temporal Memory with Magnetic Racetracks
Authors:
Hamed Vakili,
Mohammad Nazmus Sakib,
Samiran Ganguly,
Mircea Stan,
Matthew W. Daniels,
Advait Madhavan,
Mark D. Stiles,
Avik W. Ghosh
Abstract:
Race logic is a relative timing code that represents information in a wavefront of digital edges on a set of wires in order to accelerate dynamic programming and machine learning algorithms. Skyrmions, bubbles, and domain walls are mobile magnetic configurations (solitons) with applications for Boolean data storage. We propose to use current-induced displacement of these solitons on magnetic racet…
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Race logic is a relative timing code that represents information in a wavefront of digital edges on a set of wires in order to accelerate dynamic programming and machine learning algorithms. Skyrmions, bubbles, and domain walls are mobile magnetic configurations (solitons) with applications for Boolean data storage. We propose to use current-induced displacement of these solitons on magnetic racetracks as a native temporal memory for race logic computing. Locally synchronized racetracks can spatially store relative timings of digital edges and provide non-destructive read-out. The linear kinematics of skyrmion motion, the tunability and low-voltage asynchronous operation of the proposed device, and the elimination of any need for constant skyrmion nucleation make these magnetic racetracks a natural memory for low-power, high-throughput race logic applications.
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Submitted 21 May, 2020;
originally announced May 2020.
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Atomic Super-Resolution Tomography
Authors:
Poulami Somanya Ganguly,
Felix Lucka,
Hermen Jan Hupkes,
Kees Joost Batenburg
Abstract:
We consider the problem of reconstructing a nanocrystal at atomic resolution from electron microscopy images taken at a few tilt angles. A popular reconstruction approach called discrete tomography confines the atom locations to a coarse spatial grid, which is inspired by the physical a priori knowledge that atoms in a crystalline solid tend to form regular lattices. Although this constraint has p…
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We consider the problem of reconstructing a nanocrystal at atomic resolution from electron microscopy images taken at a few tilt angles. A popular reconstruction approach called discrete tomography confines the atom locations to a coarse spatial grid, which is inspired by the physical a priori knowledge that atoms in a crystalline solid tend to form regular lattices. Although this constraint has proven to be powerful for solving this very under-determined inverse problem in many cases, its key limitation is that, in practice, defects may occur that cause atoms to deviate from regular lattice positions. Here we propose a grid-free discrete tomography algorithm that allows for continuous deviations of the atom locations similar to super-resolution approaches for microscopy. The new formulation allows us to define atomic interaction potentials explicitly, which results in a both meaningful and powerful incorporation of the available physical a priori knowledge about the crystal's properties. In computational experiments, we compare the proposed grid-free method to established grid-based approaches and show that our approach can indeed recover the atom positions more accurately for common lattice defects.
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Submitted 14 July, 2020; v1 submitted 3 February, 2020;
originally announced February 2020.
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Study of Nontrivial Magnetism in 3$d$-5$d$ Transition Metal based Double Perovskites
Authors:
Shreemoyee Ganguly,
Sayantika Bhowal
Abstract:
The coexistence of the strongly correlated 3$d$ transition metal (TM) atom and the strong spin-orbit coupling (SOC) of 5$d$ TM atom is potential to host exotic physical phenomena. In the present work, we have studied the magnetism resulting from such a coexistence in La$_2$CoIrO$_6$ (LCIO), a representative of bulk 3$d$-5$d$ double perovskites. In order to gain further insight into the effect of C…
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The coexistence of the strongly correlated 3$d$ transition metal (TM) atom and the strong spin-orbit coupling (SOC) of 5$d$ TM atom is potential to host exotic physical phenomena. In the present work, we have studied the magnetism resulting from such a coexistence in La$_2$CoIrO$_6$ (LCIO), a representative of bulk 3$d$-5$d$ double perovskites. In order to gain further insight into the effect of Co-$d$ states on the Ir-$d$ states, comparisons are carried out with the isostructural La$_2$ZnIrO$_6$, where nonmagnetic Zn atom replaces the Co atom. An in-depth analysis of the magnetic states in the framework of first principles calculation, using Landau theory and magnetic multipole analysis shows that the magnetism at the two constituent TM atoms in LCIO are driven by two different magnetic order parameters, viz., the spin moment as the primary order parameter responsible for the broken time-reversal state in Co and the higher order multipole: triakontadipole for the Ir magnetic state. A tight-binding analysis with the Ir-$t_{2g}$ orbitals, further, indicate that the Ir-$d$ states are hardly affected by the Co-$d$ states, in agreement with the multipole analysis. The computed heirarchy of the relevant multipoles in the present work can be probed in neutron diffraction measurements, motivating further experiments in this direction.
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Submitted 5 January, 2020;
originally announced January 2020.
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Unconventional charge and spin dependent transport properties of a graphene nanoribbon with line-disorder
Authors:
Sudin Ganguly,
Saurabh Basu,
Santanu K. Maiti
Abstract:
Electronic transport with a line (or a few lines) of Anderson type disorder in a zigzag graphene nanoribbon is investigated in presence of Rashba spin-orbit interaction. Such line disorders give rise to peculiar behavior in both charge as well as spin-polarized transmission in the following sense. In the weak disorder regime, the charge transport data show Anderson localization up to a certain dis…
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Electronic transport with a line (or a few lines) of Anderson type disorder in a zigzag graphene nanoribbon is investigated in presence of Rashba spin-orbit interaction. Such line disorders give rise to peculiar behavior in both charge as well as spin-polarized transmission in the following sense. In the weak disorder regime, the charge transport data show Anderson localization up to a certain disorder strength, beyond which the extended states emerge and start dominating over the localized states. These results are the hallmark signature of a selectively disordered (as opposed to bulk disorder) graphene nanoribbon. However, the spin-polarized transport shows a completely contradicting behavior. Further, the structural symmetries are shown to have an important role in the spintronic properties of the nanoribbons. Moreover, the edge-disorder scenario (disorder selectively placed at the edges) seems to hold promise for the spin-filter and switching device applications.
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Submitted 26 November, 2018;
originally announced November 2018.
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Controlled engineering of spin polarized transport properties in a zigzag graphene nanojunction
Authors:
Sudin Ganguly,
Saurabh Basu,
Santanu K. Maiti
Abstract:
We investigate a novel way to manipulate the spin polarized transmission in a two terminal zigzag graphene nanoribbon in presence of Rashba spin-orbit (SO) interaction with circular shaped cavity engraved into it. A usual technique to control the spin polarized transport behaviour of a nanoribbon can be achieved by tuning the strength of the SO coupling, while we show that an efficient engineering…
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We investigate a novel way to manipulate the spin polarized transmission in a two terminal zigzag graphene nanoribbon in presence of Rashba spin-orbit (SO) interaction with circular shaped cavity engraved into it. A usual technique to control the spin polarized transport behaviour of a nanoribbon can be achieved by tuning the strength of the SO coupling, while we show that an efficient engineering of the spin polarized transport properties can also be done via cavities of different radii engraved in the nanoribbon. Simplicity of the technique in creating such cavities in the experiments renders an additional handle to explore transport properties as a function of the location of the cavity in the nanoribbon. Further, a systematic assessment of the interplay of the Rashba interaction and the dimensions of the nanoribbon is presented. These results should provide useful input to the spintronic behaviour of such devices. In addition to the spin polarization, we have also included an interesting discussion on the charge transmission properties of the nanoribbon, where, in absence of any SO interaction a metal-insulator transition induced by the presence of a cavity is observed.
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Submitted 22 October, 2018;
originally announced October 2018.
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Interface sensitivity on spin transport through a three-terminal graphene nanoribbon
Authors:
Sudin Ganguly,
Saurabh Basu,
Santanu K. Maiti
Abstract:
Spin dependent transport in a three-terminal graphene nanoribbon (GNR) is investigated in presence of Rashba spin-orbit interaction. Such a three-terminal structure is shown to be highly effective in filtering electron spins from an unpolarized source simultaneously into two output leads and thus can be used as an efficient spin filter device compared to a two-terminal one. The study of sensitivit…
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Spin dependent transport in a three-terminal graphene nanoribbon (GNR) is investigated in presence of Rashba spin-orbit interaction. Such a three-terminal structure is shown to be highly effective in filtering electron spins from an unpolarized source simultaneously into two output leads and thus can be used as an efficient spin filter device compared to a two-terminal one. The study of sensitivity of the spin-polarized transmission on the location of the outgoing leads results in interesting consequences and is explored in details. There exist certain symmetry relations between the two outgoing leads with regard to spin-polarized transport, especially when they are connected to the system in a particular manner. We believe that the prototype presented here can be realized experimentally and hence the results can also be verified.
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Submitted 18 September, 2018;
originally announced September 2018.
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The free energy of grain boundaries from atomistic computer simulation
Authors:
Saswati Ganguly,
Jürgen Horbach
Abstract:
A novel thermodynamic integration (TI) scheme is presented that allows computing the free energy of grain boundaries (GBs) in crystals from atomistic computer simulation. Unlike previous approaches, the method can be applied at arbitrary temperatures and allows for a systematic extrapolation to the thermodynamic limit. It is applied to a $\Sigma11$ GB in a face centered cubic (FCC) Lennard-Jones c…
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A novel thermodynamic integration (TI) scheme is presented that allows computing the free energy of grain boundaries (GBs) in crystals from atomistic computer simulation. Unlike previous approaches, the method can be applied at arbitrary temperatures and allows for a systematic extrapolation to the thermodynamic limit. It is applied to a $\Sigma11$ GB in a face centered cubic (FCC) Lennard-Jones crystal. At a constant density, the GB free energy shows a non-monotonic temperature dependence with a maximum at about half the melting temperature and the GB changes from a rigid to a rough interface with distinct finite size scaling above this temperature.
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Submitted 1 August, 2018;
originally announced August 2018.
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A Multiscale Materials-to-Systems Modeling of Polycrystalline Pb-Salt Photodetectors
Authors:
Samiran Ganguly,
Moonhyung Jang,
Yaohua Tan,
Sung-Shik Yoo,
Mool C. Gupta,
Avik W. Ghosh
Abstract:
We present a physics based multiscale materials-to-systems model for polycrystalline $PbSe$ photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a bandstructure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The un…
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We present a physics based multiscale materials-to-systems model for polycrystalline $PbSe$ photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a bandstructure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The unique bandstructure of the photosensitive film causes separation of generated carriers with holes migrating to the inverted $PbSe|PbI_2$ interface, while electrons are trapped in the bulk of the film inter-grain regions. These flows together forms the 2-current theory of photoconduction that quantitatively captures the $I-V$ relationship in these films. To capture the effect of pixel scaling and minority carrier blocking, we develop a model for the metallic contacts with the detector films based on the relative workfunction differences. We also develop detailed models for various physical parameters such as mobility, lifetime, quantum efficiency, noise etc. that connect the detector performance metrics such as responsivity $\mathcal{R}$ and specific detectivity $\mathcal{D^*}$ intimately with material properties and operating conditions. A compact Verilog-A based SPICE model is developed which can be directly combined with advanced digital ROIC cell designs to simulate and optimize high performance FPAs which form a critical component in the rapidly expanding market of self-driven automotive, IoTs, security, and embedded applications.
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Submitted 7 June, 2018;
originally announced June 2018.
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Analytic and numeric computation of edge states and conductivity of a Kane-Mele nanoribbon
Authors:
Priyanka Sinha,
Sudin Ganguly,
Saurabh Basu
Abstract:
We compute analytic expressions for the edge states in a zigzag Kane-Mele nanoribbon (KMNR) by solving the eigenvalue equations in presence of intrinsic and Rashba spin-orbit couplings. Owing to the P-T symmetry of the Hamiltonian the edge states are protected by topological invariance and hence are found to be robust. We have done a systematic study for each of the above cases, for example, a pri…
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We compute analytic expressions for the edge states in a zigzag Kane-Mele nanoribbon (KMNR) by solving the eigenvalue equations in presence of intrinsic and Rashba spin-orbit couplings. Owing to the P-T symmetry of the Hamiltonian the edge states are protected by topological invariance and hence are found to be robust. We have done a systematic study for each of the above cases, for example, a pristine graphene, graphene with an intrinsic spin-orbit coupling, graphene with a Rashba spin-orbit coupling, a Kane-Mele nanoribbon and supported our results on the robustness of the edge states by analytic computation of the electronic probability amplitudes, the local density of states (LDOS), band structures and the conductance spectra.
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Submitted 22 May, 2019; v1 submitted 30 April, 2018;
originally announced April 2018.
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Electrical-equivalent van der Waals gap for 2D bilayers
Authors:
Dhirendra Vaidya,
Saurabh Lodha,
Swaroop Ganguly
Abstract:
Vertical stacks of two-dimensional (2D) materials, separated by the van der Waals gap and held together by the van der Waals forces, are immensely promising for a plethora of nanotechnological applications. Charge control in these stacks may be modeled using either a simple electrostatics approach or a detailed atomistic one. In this paper, we compare these approaches for a gated 2D transition met…
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Vertical stacks of two-dimensional (2D) materials, separated by the van der Waals gap and held together by the van der Waals forces, are immensely promising for a plethora of nanotechnological applications. Charge control in these stacks may be modeled using either a simple electrostatics approach or a detailed atomistic one. In this paper, we compare these approaches for a gated 2D transition metal dichalcogenide bilayer and show that recently reported electrostatics-based models of this system give large errors in band energy compared to atomistic (Density Functional Theory) simulations. These errors are due to the tails of the ionic potentials that reduce the electrical-equivalent van der Waals gap between the 2D layers, and can be corrected by using the reduced gap in the electrostatic model. For a physical van der Waals gap (defined as the chalcogen to chalcogen distance) of 3 $\mathrmÅ$ in a 2D bilayer, the electrical-equivalent gap is less than 1 $\mathrmÅ$. For the example of band-to-band tunneling based ultra low-power transistors, this is seen to lead to errors of several hundred millivolts and more in the threshold voltage estimated from electrostatics.
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Submitted 27 March, 2018;
originally announced March 2018.
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Plastic deformation of a permanently bonded network: stress relaxation by pleats
Authors:
Saswati Ganguly,
Debankur Das,
Jürgen Horbach,
Peter Sollich,
Smarajit Karmakar,
Surajit Sengupta
Abstract:
We show that a flat two dimensional network of connected vertices, when stretched, may deform plastically by producing `pleats'; system spanning linear structures with width comparable to the lattice spacing, where the network overlaps on itself. To understand the pleating process, we introduce an external field that couples to local {\em non-affine} displacements, i.e. those displacements of neig…
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We show that a flat two dimensional network of connected vertices, when stretched, may deform plastically by producing `pleats'; system spanning linear structures with width comparable to the lattice spacing, where the network overlaps on itself. To understand the pleating process, we introduce an external field that couples to local {\em non-affine} displacements, i.e. those displacements of neighbouring vertices that cannot be represented as a local affine strain. We obtain both zero and finite temperature phase diagrams in the strain -- field plane. Pleats occur here as a result of an equilibrium first-order transition from the homogeneous network to a heterogeneous phase where stress is localised within pleats and eliminated elsewhere. We show that in the thermodynamic limit the un-pleated state is always metastable at vanishing field for infinitesimal strain. Plastic deformation of the initially homogeneous network is akin to the decay of a metastable phase via a dynamical transition. We make predictions concerning local stress distributions and thermal effects associated with pleats which may be observable in suitable experimental systems.
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Submitted 13 December, 2018; v1 submitted 14 March, 2018;
originally announced March 2018.
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Do thermodynamically stable rigid solids exist?
Authors:
Parswa Nath,
Saswati Ganguly,
Jürgen Horbach,
Peter Sollich,
Smarajit Karmakar,
Surajit Sengupta
Abstract:
Customarily, crystalline solids are defined to be {\em rigid} since they resist changes of shape determined by their boundaries. However, rigid solids cannot exist in the thermodynamic limit where boundaries become irrelevant. Particles in the solid may rearrange to adjust to shape changes eliminating stress without destroying crystalline order. Rigidity is therefore valid only in the {\em metasta…
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Customarily, crystalline solids are defined to be {\em rigid} since they resist changes of shape determined by their boundaries. However, rigid solids cannot exist in the thermodynamic limit where boundaries become irrelevant. Particles in the solid may rearrange to adjust to shape changes eliminating stress without destroying crystalline order. Rigidity is therefore valid only in the {\em metastable} state that emerges because these particle rearrangements in response to a deformation, or strain, are associated with slow collective processes. Here, we show that a thermodynamic collective variable may be used to quantify particle rearrangements that occur as a solid is deformed at zero strain rate. Advanced Monte Carlo simulation techniques are then employed to obtain the equilibrium free energy as a function of this variable. Our results lead to a new view on rigidity: While at zero strain a rigid crystal coexists with one that responds to infinitesimal strain by rearranging particles and expelling stress, at finite strain the rigid crystal is metastable, associated with a free energy barrier that decreases with increasing strain. The rigid phase becomes thermodynamically stable by switching on an external field, which penalises particle rearrangements. This produces a line of first-order phase transitions in the field - strain plane that intersects the origin. Failure of a solid once strained beyond its elastic limit is associated with kinetic decay processes of the metastable rigid crystal deformed with a finite strain rate. These processes can be understood in quantitative detail using our computed phase diagram as reference.
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Submitted 5 March, 2018;
originally announced March 2018.
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Upper Tail Large Deviations in First Passage Percolation
Authors:
Riddhipratim Basu,
Shirshendu Ganguly,
Allan Sly
Abstract:
For first passage percolation on $\mathbb{Z}^2$ with i.i.d. bounded edge weights, we consider the upper tail large deviation event; i.e., the rare situation where the first passage time between two points at distance $n$, is macroscopically larger than typical. It was shown by Kesten (1986) that the probability of this event decays as $\exp (-Θ(n^2))$. However the question of existence of the rate…
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For first passage percolation on $\mathbb{Z}^2$ with i.i.d. bounded edge weights, we consider the upper tail large deviation event; i.e., the rare situation where the first passage time between two points at distance $n$, is macroscopically larger than typical. It was shown by Kesten (1986) that the probability of this event decays as $\exp (-Θ(n^2))$. However the question of existence of the rate function i.e., whether the log-probability normalized by $n^2$ tends to a limit, had remained open. We show that under some additional mild regularity assumption on the passage time distribution, the rate function for upper tail large deviation indeed exists. Our proof can be generalized to work in higher dimensions and for the corresponding problem in last passage percolation as well. The key intuition behind the proof is that a limiting metric structure which is atypical causes the upper tail large deviation event. The formal argument then relies on an approximate version of the above which allows us to dilate the large deviation environment to compare the upper tail probabilities for various values of $n.$
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Submitted 4 December, 2017;
originally announced December 2017.