Showing 1–1 of 1 results for author: Gan, W L

Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$

Authors: T Hajiri, L. Baldrati, R. Lebrun, M. Filianina, A. Ross, N. Tanahashi, M. Kuroda, W. L. Gan, T. O. Menteş, F. Genuzio, A. Locatelli, H Asano, M. Kläui

Abstract: We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magne… ▽ More We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO$_3$/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic field, suggesting that field-induced canting of the AFM spins plays an important role. In contrast, around the coercive field, no detectable SMR signal is observed, indicating that SMR of AFM and canting magnetization components cancel out. Below 50~K, the SMR amplitude increases sizably by a factor of two as compared to room temperature, which likely correlates with the long-range ordering of the Sm ions. Our results show that the SMR is a sensitive technique for non-equilibrium spin system of non-collinear AFM systems. △ Less

Submitted 11 July, 2019; originally announced July 2019.

Comments: Accepted for publication in Journal of Physics: Condensed Matter. This is the version of the article before peer review or editing, as submitted by an author to Journal of Physics: Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it

Journal ref: J. Phys.: Condens. Matter 31, 445804 (2019)