Showing 1–7 of 7 results for author: Galceran, R

The 2021 Quantum Materials Roadmap

Authors: Feliciano Giustino, Jin Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I. Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V. Yazyev, Erik P. A. M. Bakkers, Jesper Nygård, Pol Forn-Diaz, Silvano De Franceschi, J. W. McIver, L. E. F. Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O. Valenzuela, Marius V. Costache, Aurélien Manchon , et al. (4 additional authors not shown)

Abstract: In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi… ▽ More In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 93 pages, 27 figures

Journal ref: J. Phys. Mater. 3 042006 (2020)

Tunable Klein-like tunneling of high-temperature superconducting pairs into graphene

Authors: David Perconte, Fabian A. Cuellar, Constance Moreau-Luchaire, Maelis Piquemal-Banci, Regina Galceran, Piran R. Kidambi, Marie-Blandine Martin, Stephan Hofmann, Rozenn Bernard, Bruno Dlubak, Pierre Seneor, Javier E. Villegas

Abstract: Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic structure, both in fundamental and technologically relevant ways. These include an unconventional form of the leakage mechanism the Andreev reflection and the potential… ▽ More Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic structure, both in fundamental and technologically relevant ways. These include an unconventional form of the leakage mechanism the Andreev reflection and the potential of supercurrent modulation through electrical gating. Despite the interest of high-temperature superconductors in that context, realizations have been exclusively based on low-temperature ones. Here we demonstrate gate-tunable, high-temperature superconducting proximity effect in graphene. Notably, gating effects result from the perfect transmission of superconducting pairs across an energy barrier -a form of Klein tunneling, up to now observed only for non-superconducting carriers- and quantum interferences controlled by graphene doping. Interestingly, we find that this type of interferences become dominant without the need of ultra-clean graphene, in stark contrast to the case of low-temperature superconductors. These results pave the way to a new class of tunable, high-temperature Josephson devices based on large-scale graphene. △ Less

Submitted 30 May, 2019; originally announced May 2019.

Journal ref: Nature Physics volume 14, pages 25 29 (2018)

Magnetic anisotropy and valence states in La$_2$Co$_{1-x}$Mn$_{1+x}$O$_6$ ($x\approx 0.23$) thin films studied by X-ray absorption spectroscopy techniques

Authors: Laura López-Mir, Regina Galceran, Javier Herrero-Martín, Bernat Bozzo, José Cisneros-Fernández, Elisa V. Pannunzio Miner, Lluís Balcells, Benjamín Martínez, Carlos Frontera

Abstract: X-ray absorption spectroscopy was used to determine the valence state in La$_2$Co$_{1-x}$Mn$_{1+x}$O$_6$ ($x\approx 0.23$) thin films. We found that in spite of the non-stoichiometry, Co is in a divalent state while Mn ions show a mixed valence state. The relation of this finding with the magnetic properties of the films is discussed. X-ray magnetic circular dichroism measurements prove that magne… ▽ More X-ray absorption spectroscopy was used to determine the valence state in La$_2$Co$_{1-x}$Mn$_{1+x}$O$_6$ ($x\approx 0.23$) thin films. We found that in spite of the non-stoichiometry, Co is in a divalent state while Mn ions show a mixed valence state. The relation of this finding with the magnetic properties of the films is discussed. X-ray magnetic circular dichroism measurements prove that magnetic anisotropy originates from Co spin-orbit coupling and it is strain-dependent: a strong increase of the angular contribution to the magnetic moment is found when in-plane (out-of-plane) and cell parameters get expanded (compressed). This behavior is reproduced by first order perturbation theory calculations. △ Less

Submitted 21 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 95, 224434 (2017)

Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn

Authors: R. Galceran, I. Fina, J. Cisneros-Fernández, B. Bozzo, C. Frontera, L. López-Mir, H. Deniz, K. -W. Park, B. -G. Park, Ll. Balcells, X. Martí, T. Jungwirth, B. Martínez

Abstract: Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the li… ▽ More Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15 % has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature. △ Less

Submitted 27 July, 2016; originally announced July 2016.

Strain-induced perpendicular magnetic anisotropy in La$_2$CoMnO$_{6-ε}$ thin films and its dependence with film thickness

Authors: Regina Galceran, Laura López-Mir, Bernat Bozzo, José Cisneros-Fernández, José Santiso, Lluis Balcells, Carlos Frontera, Benjamín Martínez

Abstract: Ferromagnetic insulating La$_2$CoMnO$_{6-ε}$ (LCMO) epitaxial thin films grown on top of SrTiO$_3$ (001) substrates presents a strong magnetic anisotropy favoring the out of plane orientation of the magnetization with a strong anisotropy field ($\sim 70$ kOe for film thickness of about 15 nm) and with a coercive field of about 10 kOe. The anisotropy can be tuned by modifying the oxygen content of… ▽ More Ferromagnetic insulating La$_2$CoMnO$_{6-ε}$ (LCMO) epitaxial thin films grown on top of SrTiO$_3$ (001) substrates presents a strong magnetic anisotropy favoring the out of plane orientation of the magnetization with a strong anisotropy field ($\sim 70$ kOe for film thickness of about 15 nm) and with a coercive field of about 10 kOe. The anisotropy can be tuned by modifying the oxygen content of the film which indirectly has two effects on the unit cell: i) change of the orientation of the LCMO crystallographic axis over the substrate (from c in-plane to c out-of-plane) and ii) shrinkage of the out of plane cell parameter, which implies increasing tensile strain of the films. In contrast, LCMO films grown on (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ and LaAlO$_3$ substrates (with a larger out-of-plane lattice parameter and compressive stress) display in-plane magnetic anisotropy. Thus, we link the strong magnetic anisotropy observed in La$_2$CoMnO$_{6-ε}$ to the relation between in-plane and out-of-plane parameters and so to the film stress. △ Less

Submitted 30 March, 2016; v1 submitted 29 October, 2015; originally announced October 2015.

Comments: 16 pages, 1 table 9 figures Accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 93, 144417 (2016)

Engineering the microstructure and magnetism of La$_2$CoMnO$_6$ thin films by tailoring oxygen stoichiometry

Authors: R. Galceran, C. Frontera, Ll. Balcells, J. Cisneros-Fernández, L. López Mir, J. Roqueta, J. Santiso, N. Bagués, B. Bozzo, A. Pomar, F. Sandiumenge, B. Martínez

Abstract: We report on the magnetic and structural properties of ferromagnetic-insulating La$_2$CoMnO$_6$ thin films grown on top of (001) STO substrates by means of RF sputtering technique. Careful structural analysis, by using synchrotron X-ray diffraction, allows identifying two different crystallographic orientations that are closely related to oxygen stoichiometry and to the features (coercive fields a… ▽ More We report on the magnetic and structural properties of ferromagnetic-insulating La$_2$CoMnO$_6$ thin films grown on top of (001) STO substrates by means of RF sputtering technique. Careful structural analysis, by using synchrotron X-ray diffraction, allows identifying two different crystallographic orientations that are closely related to oxygen stoichiometry and to the features (coercive fields and remanence) of the hysteresis loops. Both Curie temperature and magnetic hysteresis turn out to be dependent on the oxygen stoichiometry. In situ annealing conditions allow tailoring the oxygen content of the films, therefore controlling their microstructure and magnetic properties. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Journal ref: Appl. Phys. Letters 105, 242401 (2014)

Intrinsic robust antiferromagnetism at manganite surfaces and interfaces

Authors: S. Valencia, L. Peña, Z. Konstantinovic, Ll. Balcells, R. Galceran, D. Schmitz, F. Sandiumenge, M. Casanove, B. Martínez

Abstract: Ferromagnetic/metallic manganese perovskites, such as La2/3Sr1/3MnO3 (LSMO)are promising materials for the design and implementation of novel spintronic devices working at room temperature. However, their implementation in practical applications has been severely hampered due to the breakdown of their magnetotransport properties at temperatures well below their magnetic transition temperature. Thi… ▽ More Ferromagnetic/metallic manganese perovskites, such as La2/3Sr1/3MnO3 (LSMO)are promising materials for the design and implementation of novel spintronic devices working at room temperature. However, their implementation in practical applications has been severely hampered due to the breakdown of their magnetotransport properties at temperatures well below their magnetic transition temperature. This breakdown has been usually associated to surface and interface related problems but its physical origin has not been clearly established yet. In this work we investigate the interface between La2/3Sr1/3MnO3 (LSMO) thin films and different capping layers by means of x-ray linear dichroism and transport measurements. Our data reveal that, irrespective to the capping material, LSMO/capping layer bilayers exhibit an antiferromegnetic/insulating phase at the interface, likely to originate from a preferential occupancy of Mn 3d 3z2-r2 eg orbitals. This phase, which extends ca. 2 unit cells, is also observed in an uncapped LSMO reference sample thus, pointing to an intrinsic interfacial phase separation phenomenon, likely to be promoted by the structural disruption and symmetry breaking at the LSMO free surface/interface. These experimental observations strongly suggest that the structural disruption at the LSMO interfaces play a major role on the observed depressed magnetotransport properties in manganite-based magnetic tunneling junctions and it is at the origin of the so-called dead layer. △ Less

Submitted 21 February, 2013; originally announced February 2013.

Comments: 19 pages, 5 figures, 1 table