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Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates
Authors:
Kirill V. Chizh,
Larisa V. Arapkina,
Dmitry B. Stavrovsky,
Peter I. Gaiduk,
Vladimir A. Yuryev
Abstract:
In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si$_3$N$_4$/SiO$_2$/c-Si substrates from molecular beams under conditions of ultrahigh vacuum are studied in detail. Diffusion of hydrogen atoms from a dielectric layer into the growing film is shown to accompany the growth of a silicon film on a Si$_3$N…
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In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si$_3$N$_4$/SiO$_2$/c-Si substrates from molecular beams under conditions of ultrahigh vacuum are studied in detail. Diffusion of hydrogen atoms from a dielectric layer into the growing film is shown to accompany the growth of a silicon film on a Si$_3$N$_4$ layer deposited by CVD or on a SiO$_2$ layer obtained by thermal oxidation of a silicon wafer. The process of hydrogen migration from the dielectric substrates into the silicon film is studied using FTIR spectroscopy. The reduction of IR absorption at the bands related to the N$-$H bonds vibrations and the increase of IR absorption at the bands relating to the Si$-$N bonds vibrations in IR spectra demonstrate that hydrogen atoms leave Si$_3$N$_4$ layer during Si deposition from a molecular beam. The absorption band assigned to the valence vibrations of the Si$-$H bond at $\sim 2100$ cm$^{-1}$ emerging in IR spectra obtained at samples deposited both on Si$_3$N$_4$ and SiO$_2$ layers indicates the accumulation of hydrogen atoms in silicon films. The difference in chemical potentials of hydrogen atoms in the dielectric layer and the silicon film explains the transfer of hydrogen atoms from the Si$_3$N$_4$ or SiO$_2$ layer into the growing silicon film.
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Submitted 19 April, 2019; v1 submitted 30 January, 2019;
originally announced January 2019.
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Light emission from silicon with tin-containing nanocrystals
Authors:
Søren Roesgaard,
Jacques Chevallier,
Peter I. Gaiduk,
John Lundsgaard Hansen,
Pia Bomholt Jensen,
Arne Nylandsted Larsen,
Axel Svane,
Peter Balling,
Brian Julsgaard
Abstract:
Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si_{1-x-y}Sn_{x}C_{y}, where x = 1.6 % and y = 0.04 %, followed by annealing at various temperatures ranging from 650 to 900 degrees C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ~ 10^{17} cm^{-3} and ~ 5 nm, respectively. Photolu…
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Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si_{1-x-y}Sn_{x}C_{y}, where x = 1.6 % and y = 0.04 %, followed by annealing at various temperatures ranging from 650 to 900 degrees C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ~ 10^{17} cm^{-3} and ~ 5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 degrees C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed.
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Submitted 27 July, 2015; v1 submitted 29 April, 2015;
originally announced April 2015.
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Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers
Authors:
V. A. Yuryev,
K. V. Chizh,
V. A. Chapnin,
S. A. Mironov,
V. P. Dubkov,
O. V. Uvarov,
V. P. Kalinushkin,
V. M. Senkov,
O. Y. Nalivaiko,
A. G. Novikau,
P. I. Gaiduk
Abstract:
Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates simulating the bolometer cells. L…
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Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about $-$2%/$^{\circ}$C in the temperature interval from 25 to 50$^{\circ}$C.
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Submitted 13 May, 2015; v1 submitted 19 March, 2015;
originally announced March 2015.
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Germanium Segregation in CVD Grown Sige Layers for Flash Memory Application
Authors:
Andrei G. Novikau,
Peter I. Gaiduk
Abstract:
A 2D layer of spherical, crystalline Ge nanodots embedded in SiO2 was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using transmission electron microscopy and rutherford back scattering spectrometry, as well as electrically by measuring CV and IV characteristics. It was found that form…
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A 2D layer of spherical, crystalline Ge nanodots embedded in SiO2 was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using transmission electron microscopy and rutherford back scattering spectrometry, as well as electrically by measuring CV and IV characteristics. It was found that formation of a high density Ge dots took place due to oxidation induced Ge segregation. The dots are situated in the SiO2 on the average distance 5 nm from the substrate. Strong evidence of charge storage effect in the crystalline Ge nanodot layer is demonstrated by the hysteresis behavior of the high frequency CV curves.
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Submitted 26 December, 2008;
originally announced December 2008.
