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Contact Resistance Study of Various Metal Electrodes with CVD Graphene
Authors:
Amit Gahoi,
Stefan Wagner,
Andreas Bablich,
Satender Kataria,
Vikram Passi,
Max C. Lemme
Abstract:
In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with five metals: gold, nickel, nickel/gold, palladium and plat…
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In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with five metals: gold, nickel, nickel/gold, palladium and platinum/gold. The lowest value of 92 Ωμm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of -40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450°C for 1 hour in argon-95% / hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene. The results presented in this work provide an overview for potential contact engineering for high performance graphene-based electronic devices.
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Submitted 22 November, 2022;
originally announced November 2022.
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Chemical vapor deposited graphene: From synthesis to applications
Authors:
Satender Kataria,
Stefan Wagner,
Jasper Ruhkopf,
Aamit Gahoi,
Himadri Pandey,
Rainer Bornemann,
Sam Vaziri,
Anderson D. Smith,
Mikael Östling,
Max C. Lemme
Abstract:
Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD…
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Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD methods for graphene synthesis. We also discuss scalable methods to transfer graphene onto desired substrates. Finally, we discuss potential applications that would benefit from a fully scaled, semiconductor technology compatible production process.
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Submitted 27 March, 2021;
originally announced March 2021.
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Field Effect Transistors based on Networks of Highly Aligned, Chemically Synthesized N=7 Armchair Graphene Nanoribbons
Authors:
Vikram Passi,
Amit Gahoi,
Boris V. Senkovskiy,
Danny Haberer,
Felix R. Fischer,
Alexander Grüneis,
Max C. Lemme
Abstract:
We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons.…
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We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum I$_{ON}$/I$_{OFF}$ current ratio of 87.5.
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Submitted 19 March, 2018;
originally announced March 2018.
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Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
Authors:
Grzegorz Lupina,
Julia Kitzmann,
Ioan Costina,
Mindaugas Lukosius,
Christian Wenger,
Andre Wolff,
Sam Vaziri,
Mikael Ostling,
Iwona Pasternak,
Aleksandra Krajewska,
Wlodek Strupinski,
Satender Kataria,
Amit Gahoi,
Max C. Lemme,
Guenther Ruhl,
Guenther Zoth,
Oliver Luxenhofer,
Wolfgang Mehr
Abstract:
Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etch and electrochemical delamination methods with…
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Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etch and electrochemical delamination methods with respect to residual sub-monolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection x-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10$^{13}$ atoms/cm$^{2}$. These metal impurities appear to be partly mobile upon thermal treatment as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics these results reveal that further progress in synthesis, handling, and cleaning of graphene is required on the way to its advanced electronic and optoelectronic applications.
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Submitted 5 May, 2015;
originally announced May 2015.
