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Showing 1–1 of 1 results for author: Gagliano, L

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  1. arXiv:1905.12671  [pdf

    physics.app-ph cond-mat.mtrl-sci

    Strain engineering in Ge/GeSn core/shell nanowires

    Authors: Simone Assali, Marco Albani, Roberto Bergamaschini, Marcel A. Verheijen, Ang Li, Sebastian Kölling, Luca Gagliano, Erik P. A. M. Bakkers, Leo Miglio

    Abstract: Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell nanowire geometry. Incorporation of Sn content in the 10-20 at.% range is achieved with Ge core diameters ranging from 50nm to 100nm. While the smaller cores lead to… ▽ More

    Submitted 29 May, 2019; originally announced May 2019.