Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise
Authors:
Bekari Gabritchidze,
Kieran A. Cleary,
Anthony C. Readhead,
Austin J. Minnich
Abstract:
We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages ($V_{DS}$). From these data, we extract a small-signal model and the drain (output) noise current power spectral density ($S_{id}$) at each bias and temperature. Th…
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We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages ($V_{DS}$). From these data, we extract a small-signal model and the drain (output) noise current power spectral density ($S_{id}$) at each bias and temperature. This procedure enables $S_{id}$ to be obtained while accounting for the variation of small-signal model, noise impedance match, and other parameters under the various conditions. We find that the thermal noise associated with the channel conductance can only account for a portion of the measured output noise. Considering the variation of output noise with physical temperature and bias and prior studies of microwave noise in quantum wells, we hypothesize that a hot electron noise source based on real-space transfer of electrons from the channel to the barrier could account for the remaining portion of $S_{id}$. We suggest further studies to gain insights into the physical mechanisms. Finally, we calculate that the minimum HEMT noise temperature could be reduced by up to $\sim 50$% and $\sim 30$% at cryogenic temperature and room temperature, respectively, if the hot electron noise could be suppressed.
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Submitted 20 March, 2024; v1 submitted 6 September, 2022;
originally announced September 2022.
Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry
Authors:
Alexander Y. Choi,
Iretomiwa Esho,
Bekari Gabritchidze,
Jacob Kooi,
Austin J. Minnich
Abstract:
Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the microwave noise figure are therefore of practical interest. In particular, the contribution of thermal noise from the gate at cryogenic temperatures remains unclear owi…
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Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the microwave noise figure are therefore of practical interest. In particular, the contribution of thermal noise from the gate at cryogenic temperatures remains unclear owing to a lack of experimental measurements of thermal resistance under these conditions. Here, we report measurements of gate junction temperature and thermal resistance in a HEMT at cryogenic and room temperatures using a Schottky thermometry method. At temperatures $\sim 20$ K, we observe a nonlinear trend of thermal resistance versus power that is consistent with heat dissipation by phonon radiation. Based on this finding, we consider heat transport by phonon radiation at the low-noise bias and liquid helium temperatures and estimate that the thermal noise from the gate is several times larger than previously assumed owing to self-heating. We conclude that without improvements in thermal management, self-heating results in a practical lower limit for microwave noise figure of HEMTs at cryogenic temperatures.
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Submitted 24 May, 2021;
originally announced May 2021.
