Showing 1–10 of 10 results for author: Gaal-Nagy, K

Structure and stability of the Si(331)-(12x1) surface reconstruction

Authors: Corsin Battaglia, Katalin Gaal-Nagy, Giovanni Onida, Philipp Aebi

Abstract: We recently proposed a new structural model for the Si(331)-(12x1) surface reconstruction containing silicon pentamers as elementary structural building blocks. Using first-principles density-functional theory we here investigate the stability of a variety of adatom configurations and determine the lowest energy configuration. We also present a detailed comparison of the energetics between our m… ▽ More We recently proposed a new structural model for the Si(331)-(12x1) surface reconstruction containing silicon pentamers as elementary structural building blocks. Using first-principles density-functional theory we here investigate the stability of a variety of adatom configurations and determine the lowest energy configuration. We also present a detailed comparison of the energetics between our model for Si(331)-(12x1) and the adatom-tetramer-interstitial model for Si(110)-(16x2), which shares the same structural building blocks. △ Less

Submitted 4 February, 2009; originally announced February 2009.

Journal ref: Phys. Rev. B 80, 214102 (2009)

Elementary structural building blocks encountered in silicon surface reconstructions

Authors: Corsin Battaglia, Katalin Gaal-Nagy, Claude Monney, Clement Didiot, Eike Fabian Schwier, Michael Gunnar Garnier, Giovanni Onida, Philipp Aebi

Abstract: Driven by the reduction of dangling bonds and the minimization of surface stress, reconstruction of silicon surfaces leads to a striking diversity of outcomes. Despite this variety even very elaborate structures are generally comprised of a small number of structural building blocks. We here identify important elementary building blocks and discuss their integration into the structural models as… ▽ More Driven by the reduction of dangling bonds and the minimization of surface stress, reconstruction of silicon surfaces leads to a striking diversity of outcomes. Despite this variety even very elaborate structures are generally comprised of a small number of structural building blocks. We here identify important elementary building blocks and discuss their integration into the structural models as well as their impact on the electronic structure of the surface. △ Less

Submitted 29 September, 2008; originally announced September 2008.

Journal ref: J. Phys.: Condens. Matter 21, 013001 (2009)

A new structural model for the Si(331)-(12x1) reconstruction

Authors: Corsin Battaglia, Katalin Gaal-Nagy, Claude Monney, Clement Didiot, Eike Fabian Schwier, Michael Gunnar Garnier, Giovanni Onida, Philipp Aebi

Abstract: A new structural model for the Si(331)-(12x1) reconstruction is proposed. Based on scanning tunneling microscopy images of unprecedented resolution, low-energy electron diffraction data, and first-principles total-energy calculations, we demonstrate that the reconstructed Si(331) surface shares the same elementary building blocks as the Si(110)-(16x2) surface, establishing the pentamer as a univ… ▽ More A new structural model for the Si(331)-(12x1) reconstruction is proposed. Based on scanning tunneling microscopy images of unprecedented resolution, low-energy electron diffraction data, and first-principles total-energy calculations, we demonstrate that the reconstructed Si(331) surface shares the same elementary building blocks as the Si(110)-(16x2) surface, establishing the pentamer as a universal building block for complex silicon surface reconstructions. △ Less

Submitted 24 July, 2008; originally announced July 2008.

Journal ref: Phys. Rev. Lett. 102, 066102 (2009)

Ab-initio calculation of the vibrational modes of SiH4, H2SiO, Si10H16, and Si10H14O

Authors: Katalin Gaal-Nagy, Giulia Canevari, Giovanni Onida

Abstract: We have studied the normal modes of hydrogenated and oxidized silicon nanocrystals, namely SiH4 (silan), H2SiO (silanon), Si10H16 and Si10H14O. The small clusters (SiH4 and H2SiO) have been used for convergence tests and their bondlengths and frequencies have been compared with experimental and theoretical reference data. For the large clusters (Si10H16 and Si10H14O) we have investigated the vib… ▽ More We have studied the normal modes of hydrogenated and oxidized silicon nanocrystals, namely SiH4 (silan), H2SiO (silanon), Si10H16 and Si10H14O. The small clusters (SiH4 and H2SiO) have been used for convergence tests and their bondlengths and frequencies have been compared with experimental and theoretical reference data. For the large clusters (Si10H16 and Si10H14O) we have investigated the vibrational density of states where we have identified the oxygen-related spectral features. The vibrational modes have been also analyzed with respect to the displacement patterns. The calculations have been carried out within the density-functional and density-functional perturbation theory using the local-density approximation. △ Less

Submitted 24 August, 2007; originally announced August 2007.

Comments: 9 pages, 7 figures

Ab-initio calculation of phonon dispersion curves: accelerating q point convergence

Authors: Katalin Gaal-Nagy, Dieter Strauch

Abstract: We present a scheme for the improved description of the long-range interatomic force constants in a more accurate way than the procedure which is commonly used within plane-wave based density-functional perturbation-theory calculations. Our scheme is based on the inclusion of a q point grid which is denser in a restricted area around the center of the Brillouin Zone than in the remaining parts,… ▽ More We present a scheme for the improved description of the long-range interatomic force constants in a more accurate way than the procedure which is commonly used within plane-wave based density-functional perturbation-theory calculations. Our scheme is based on the inclusion of a q point grid which is denser in a restricted area around the center of the Brillouin Zone than in the remaining parts, even though the method is not limited to an area around Gamma. We have tested the validity of our procedure in the case of high-pressure phases of bulk silicon considering the bct and sh structure. △ Less

Submitted 3 July, 2007; originally announced July 2007.

Comments: 7 pages, 6 figures, draft version, to be submitted soon

Ab-initio calculations of the optical properties of the Si(113)3x2ADI surface

Authors: Katalin Gaal-Nagy, Giovanni Onida

Abstract: We investigated the stable silicon (113) surface with a 3x2ADI reconstruction by ab-initio methods. The ground state properties have been obtained using the density-functional theory. We present the dispersion of the electronic band structure, where the surface bands have been distinguished from the projected bulk bands by calculating their localization in the slab. The optical spectra, here the… ▽ More We investigated the stable silicon (113) surface with a 3x2ADI reconstruction by ab-initio methods. The ground state properties have been obtained using the density-functional theory. We present the dispersion of the electronic band structure, where the surface bands have been distinguished from the projected bulk bands by calculating their localization in the slab. The optical spectra, here the reflectance anisotropy (RAS), have been obtained within the independent particle random phase approximation. We identified surface features in the spectra tracing them back to the responsible electronic states and, studied their localization in the slab. A comparison with available experimental data for the band structure and the RAS shows a good agreement. △ Less

Submitted 5 November, 2006; originally announced November 2006.

Comments: 10 pages, 10 figures

Journal ref: Phys. Rev. B 75, 155331 (2007)

Dielectric function of the Si(113)3x2ADI surface from ab-initio methods

Authors: Katalin Gaal-Nagy, Giovanni Onida

Abstract: We have investigated the imaginary part of the dielectric function Im(epsilon) of the (113) 3x2 ADI reconstructed surface of silicon. The calculations have been performed for a periodic slab within the plane-wave pseudopotential approach to the density-functional theory. The three diagonal components of Im(epsilon) have been derived from the momentum matrix elements within the independent partic… ▽ More We have investigated the imaginary part of the dielectric function Im(epsilon) of the (113) 3x2 ADI reconstructed surface of silicon. The calculations have been performed for a periodic slab within the plane-wave pseudopotential approach to the density-functional theory. The three diagonal components of Im(epsilon) have been derived from the momentum matrix elements within the independent particle random phase approximation (IPRPA). In this article, the importance of the k-point convergence is figured out by inspecting k-point resolved spectra. △ Less

Submitted 5 November, 2006; originally announced November 2006.

Comments: 6 pages, 4 figures, proceedings EPIOPTICS-9 (Erice, Italy, 2006)

Transition pressures and enthalpy barriers for the cd->beta-tin transition in Si and Ge under non-hydrostatic conditions

Authors: Katalin Gaal-Nagy, Dieter Strauch

Abstract: We present an ab-initio study of the phase transition cd->beta-tin in Si and Ge under hydrostatic and non-hydrostatic pressure. For this purpose we have developed a new method to calculate the influence of non-hydrostatic pressure components not only on the transition pressure but also on the enthalpy barriers between the phases. We find good agreement with available experimental and other theor… ▽ More We present an ab-initio study of the phase transition cd->beta-tin in Si and Ge under hydrostatic and non-hydrostatic pressure. For this purpose we have developed a new method to calculate the influence of non-hydrostatic pressure components not only on the transition pressure but also on the enthalpy barriers between the phases. We find good agreement with available experimental and other theoretical data. The calculations have been performed using the plane-wave pseudopotential approach to the density-functional theory within the local-density and the generalized-gradient approximation implemented in VASP. △ Less

Submitted 29 August, 2005; originally announced August 2005.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 73, 134101 (2006)

Phonons in the beta-tin, Imma, and sh phases of Silicon from ab initio calculations

Authors: Katalin Gaal-Nagy, Dieter Strauch

Abstract: We present a new interpretation of measured Raman frequencies of a high-pressure structure of Silicon which was assigned previously to the beta-tin phase. Our results show that the beta-tin->Imma->sh phase transitions have been already indicated in this experiment which was performed before the discovery of the Imma phase. We have calculated phonon-dispersion curves for the beta-tin, Imma, and s… ▽ More We present a new interpretation of measured Raman frequencies of a high-pressure structure of Silicon which was assigned previously to the beta-tin phase. Our results show that the beta-tin->Imma->sh phase transitions have been already indicated in this experiment which was performed before the discovery of the Imma phase. We have calculated phonon-dispersion curves for the beta-tin, Imma, and sh phases of silicon using the plane-wave pseudopotential approach to the density-functional theory and the density-functional perturbation theory within the local density approximation. With the new assignment, the calculated phonon frequencies display an excellent agreement with the experimental data, and can be also used to determine precisely the transition pressure for the Imma->beta-tin phase transition. The sh->Imma transition is accompanied by soft modes. △ Less

Submitted 9 February, 2005; originally announced February 2005.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. B 73, 014117 (2006)

Ab initio study of the beta$-tin->Imma->sh phase transitions in silicon and germanium

Authors: Katalin Gaal-Nagy, Pasquale Pavone, Dieter Strauch

Abstract: We have investigated the structural sequence of the high-pressure phases of silicon and germanium. We have focussed on the cd->beta-tin->Imma->sh phase transitions. We have used the plane-wave pseudopotential approach to the density-functional theory implemented within the Vienna ab-initio simulation package (VASP). We have determined the equilibrium properties of each structure and the values o… ▽ More We have investigated the structural sequence of the high-pressure phases of silicon and germanium. We have focussed on the cd->beta-tin->Imma->sh phase transitions. We have used the plane-wave pseudopotential approach to the density-functional theory implemented within the Vienna ab-initio simulation package (VASP). We have determined the equilibrium properties of each structure and the values of the critical parameters including a hysteresis effect at the phase transitions. The order of the phase transitions has been obtained alternatively from the pressure dependence of the enthalpy and of the internal structure parameters. The commonly used tangent construction is shown to be very unreliable. Our calculations identify a first-order phase transition from the cd to the beta-tin and from the Imma to the sh phase, and they indicate the possibility of a second-order phase-transition from the beta-tin to the Imma phase. Finally, we have derived the enthalpy barriers between the phases. △ Less

Submitted 22 January, 2004; v1 submitted 15 August, 2003; originally announced August 2003.

Comments: 12 pages, 16 figures

Journal ref: Phys. Rev. B 69, 134112 (2004)