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Destructive quantum interference in transport through molecules with electron-electron and electron-vibration interactions
Authors:
P. Roura-Bas,
F. Güller,
L. Tosi,
A. A. Aligia
Abstract:
We study the transport through a molecular junction exhibiting interference effects. We show that these effects can still be observed in the presence of molecular vibrations if Coulomb repulsion is taken into account. In the Kondo regime, the conductance of the junction can be changed by several orders of magnitude by tuning the levels of the molecule, or displacing a contact between two atoms, fr…
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We study the transport through a molecular junction exhibiting interference effects. We show that these effects can still be observed in the presence of molecular vibrations if Coulomb repulsion is taken into account. In the Kondo regime, the conductance of the junction can be changed by several orders of magnitude by tuning the levels of the molecule, or displacing a contact between two atoms, from nearly perfect destructive interference to values of the order of 2e 2 /h expected in Kondo systems. We also show that this large conductance change is robust for reasonable temperatures and voltages for symmetric and asymmetric tunnel couplings between the source-drain electrodes and the molecular orbitals. This is relevant for the development of quantum interference effect transistors based on molecular junctions.
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Submitted 23 August, 2019;
originally announced August 2019.
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Spin density wave instabilities in the NbS2 monolayer
Authors:
F. Güller,
V. L. Vildosola,
A. M. Llois
Abstract:
In the present work, we study the magnetic properties of the NbS2 monolayer by first-principles calculations. The transition metal dichalcogenides (TMDC) are a family of laminar materials presenting exciting properties such as charge density waves (CDW), superconductivity and metal-insulating transitions among others. 2H-NbS2 is a particular case within the family, because it is the only one that…
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In the present work, we study the magnetic properties of the NbS2 monolayer by first-principles calculations. The transition metal dichalcogenides (TMDC) are a family of laminar materials presenting exciting properties such as charge density waves (CDW), superconductivity and metal-insulating transitions among others. 2H-NbS2 is a particular case within the family, because it is the only one that is superconductor without exhibiting a CDW order. Although no long range magnetic order was experimentally observed in the TMDC, we show here that the single monolayer of NbS2 is on the verge of a spin density wave (SDW) phase. Our calculations indicate that a wave-like magnetic order is stabilized in the NbS2 monolayer in the presence of magnetic defects or within zig-zag nanoribbons, due to the presence of unpaired electrons. We calculate the real part of the bare electronic susceptibilty and the corresponding nesting function of the clean NbS2 monolayer, showing that there are strong electronic instabilities at the same wavevector asociated with the calculated SDWs, also corresponding with one of the main nesting vectors of the Fermi surface. We conclude that the physical mechanism behind the spin-wave instabilities are the nesting properties, accentuated by the quasi 2D character of this system, and the rather strong Coulomb interactions of the 4d band of the Nb atom. We also estimate the amplitude of the spin-fluctuations and find that they are rather large, as expected for a system on the verge of a quantum critical transition.
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Submitted 12 April, 2016; v1 submitted 21 October, 2015;
originally announced October 2015.
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Tuning the electronic properties at the surface of BaBiO3 thin films
Authors:
Cristian Ferreyra,
Francisco Guller,
Florencia Marchini,
Ulrike Lüders,
Cecilia Albornoz,
Ana Gabriela Leyva,
Federico José Williams,
Ana María Llois,
Verónica Vildosola,
Diego Rubi
Abstract:
The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO3 appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposit…
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The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO3 appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO3 thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron doping at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases.
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Submitted 2 June, 2016; v1 submitted 26 August, 2015;
originally announced August 2015.
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Mechanism to Generate a Two-Dimensional Electron Gas at the Surface of the Charge-Ordered Semiconductor BaBiO3
Authors:
Verónica Vildosola,
Francisco Güller,
Ana M. Llois
Abstract:
In this work, we find by means of first principle calculations a new physical mechanism to generate a two dimensional electron gas, namely, the breaking of charge ordering at the surface of a charge ordered semiconductor due to the incomplete oxygen environment of the surface ions. The emergence of the 2D gas is independent of the presence of oxygen vacancies or polar discontinuities; this is a se…
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In this work, we find by means of first principle calculations a new physical mechanism to generate a two dimensional electron gas, namely, the breaking of charge ordering at the surface of a charge ordered semiconductor due to the incomplete oxygen environment of the surface ions. The emergence of the 2D gas is independent of the presence of oxygen vacancies or polar discontinuities; this is a self-doping effect. This mechanism might apply to many charge ordered systems, in particular, we study the case of BaBiO3(001). In bulk, this material is a prototype of a "forbidden valence" compound in which the formal "metallic" Bi4+ state is skipped exhibiting a charge disproportionated Bi3+ - Bi5+ ordered structure. At room temperature, this charge disproportionation together with the breathing distortions gives rise to a Peierls semiconductor with monoclinic crystal structure. At higher temperature (T > 750 K) or upon doping, it turns cubic and metallic. Interestingly, doped BaBiO3 was one of the first non-cuprate high-Tc superconductors discovered. The outer layer of the Bi-terminated simulated surface turns more cubic- like and metallic while the inner layers remain in the insulating monoclinic state. On the other hand, the metallization does not occur for the Ba termination, a fact that makes this system appealing for nanostructuring. Finally, this finding sets another possible route for future exploration: the potential scenario of 2D superconductivity at the BaBiO3 surface.
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Submitted 21 May, 2013; v1 submitted 19 September, 2012;
originally announced September 2012.
