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Zero external magnetic field quantum standard of resistance at the 10-9 level
Authors:
D. K. Patel,
K. M. Fijalkowski,
M. Kruskopf,
N. Liu,
M. Götz,
E. Pesel,
M. Jaime,
M. Klement,
S. Schreyeck,
K. Brunner,
C. Gould,
L. W. Molenkamp,
H. Scherer
Abstract:
The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We…
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The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 +/- 8.7) nohm/ohm when extrapolated to zero measurement current, and (8.6 +/- 6.7) nohm/ohm when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1), which sets a new benchmark for the quantization accuracy in topological matter. This precision and accuracy at the nohm/ohm level (or 10-9 of relative uncertainty) achieve the thresholds for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance - an important step towards the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference.
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Submitted 22 January, 2025; v1 submitted 17 October, 2024;
originally announced October 2024.
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Improvements of the programmable quantum current generator for better traceability of electrical current measurements
Authors:
Sophie Djordjevic,
Ralf Behr,
Dietmar Drung,
Martin Götz,
Wilfrid Poirier
Abstract:
A programmable quantum current generator based on the application of Ohm's law to quantum voltage and resistance standards has demonstrated a realization of the ampere from the elementary charge with a $10^{-8}$ relative uncertainty [J. Brun-Picard et al. PRX 6, 041051, 2016]. Here, we report on improvements of the device leading to a noise reduction of the generated quantized current. The improve…
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A programmable quantum current generator based on the application of Ohm's law to quantum voltage and resistance standards has demonstrated a realization of the ampere from the elementary charge with a $10^{-8}$ relative uncertainty [J. Brun-Picard et al. PRX 6, 041051, 2016]. Here, we report on improvements of the device leading to a noise reduction of the generated quantized current. The improved quantum current generator is used to calibrate different ammeters with lower measurement uncertainties. Besides, measurements of its quantized current using a calibrated Ultrastable Low-Noise Current Amplifier (ULCA) have shown that the realizations of the ampere at PTB (Physikalisch-Technische Bundesanstalt) and LNE (Laboratoire national de métrologie et d'essais) in the range $\pm50$ $μ$A agreed to -3.7 parts in $10^{7}$ with a combined standard uncertainty of 3.1 parts in $10^{7}$ (coverage factor $k_\mathrm{c}=1$).
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Submitted 9 June, 2021;
originally announced June 2021.
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Zero-field quantum anomalous Hall metrology as a step towards a universal quantum standard unit system
Authors:
Martin Goetz,
Kajetan M. Fijalkowski,
Eckart Pesel,
Matthias Hartl,
Steffen Schreyeck,
Martin Winnerlein,
Stefan Grauer,
Hansjoerg Scherer,
Karl Brunner,
Charles Gould,
Franz J. Ahlers,
Laurens W. Molenkamp
Abstract:
In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant R$_K$ with high precision. Here, we pre…
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In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant R$_K$ with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)$_2$Te$_3$ devices without external magnetic field. We established as a new upper limit for a potential deviation of the quantized anomalous Hall resistance from RK a value of 0.26 +- 0.22 ppm, the smallest and most precise value reported to date. This provides another major step towards realization of the zero-field quantum resistance standard which in combination with Josephson effect will provide the universal quantum units standard in the future.
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Submitted 11 October, 2017;
originally announced October 2017.
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Direct Comparison of Fractional and Integer Quantized Hall Resistance
Authors:
Franz J. Ahlers,
Martin Götz,
Klaus Pierz
Abstract:
We present precision measurements of the fractional quantized Hall effect where the quantized resistance $R^{[1/3]}$ in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance $R^{[2]}$, represented by an integer quantum Hall state at filling factor 2. A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directl…
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We present precision measurements of the fractional quantized Hall effect where the quantized resistance $R^{[1/3]}$ in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance $R^{[2]}$, represented by an integer quantum Hall state at filling factor 2. A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directly compare two resistance values of two GaAs-based devices located in two cryostats. A value of $1 - (5.3 \pm 6.3) 10^{-8}$ (95% confidence level) was obtained for the ratio $(R^{[1/3]}/6R^{[2]})$. This constitutes the most precise comparison of integer resistance quantization (in terms of $h/e^2$) in single-particle systems and of fractional quantization in fractionally charged quasi-particle systems. While not relevant for practical metrology, such a test of the validity of the underlying physics is of significance in the context of the up-coming revision of the SI.
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Submitted 6 June, 2017; v1 submitted 15 March, 2017;
originally announced March 2017.
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Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
Authors:
Mattias Kruskopf,
Davood Momeni Pakdehi,
Klaus Pierz,
Stefan Wundrack,
Rainer Stosch,
Thorsten Dziomba,
Martin Goetz,
Jens Baringhaus,
Johannes Aprojanz,
Christoph Tegenkamp,
Jakob Lidzba,
Thomas Seyller,
Frank Hohls,
Franz J. Ahlers,
Hans W. Schumacher
Abstract:
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation…
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We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon source. With most of the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions is formed with lateral dimensions only limited by the size of the substrate. This makes the polymer assisted sublimation growth technique the most promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K with until now unreached precision and high electron mobilities on mm scale devices.
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Submitted 6 June, 2016;
originally announced June 2016.
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Validation of a quantized-current source with 0.2 ppm uncertainty
Authors:
Friederike Stein,
Dietmar Drung,
Lukas Fricke,
Hansjörg Scherer,
Frank Hohls,
Christoph Leicht,
Martin Götz,
Christian Krause,
Ralf Behr,
Eckart Pesel,
Klaus Pierz,
Uwe Siegner,
Franz-Josef Ahlers,
Hans W. Schumacher
Abstract:
We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies $f$ up to $1$ GHz. The measurements were performed with a new picoammeter instrument, traceable to the Josephson and quantum Hall effects. Current quantization according to $I=ef$ with $e$ the elementary charge was confirmed at $f=545$ MHz with a total relative uncertainty…
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We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies $f$ up to $1$ GHz. The measurements were performed with a new picoammeter instrument, traceable to the Josephson and quantum Hall effects. Current quantization according to $I=ef$ with $e$ the elementary charge was confirmed at $f=545$ MHz with a total relative uncertainty of 0.2 ppm, improving the state of the art by about a factor of 5. For the first time, the accuracy of a possible future quantum current standard based on single-electron transport was experimentally validated to be better than the best realization of the ampere within the present SI.
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Submitted 19 June, 2015;
originally announced June 2015.
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Traceable precision pA direct current measurements with the ULCA
Authors:
Hansjörg Scherer,
Gerd-Dietmar Willenberg,
Dietmar Drung,
Martin Götz,
Eckart Pesel
Abstract:
A standard method for picoammeter calibrations is the capacitor charging technique, which allows generating traceable currents in the sub-nA range. However, its accuracy is limited by the ac-dc differences of the capacitances involved. The Ultrastable Low-noise Current Amplifier (ULCA) is a novel high-precision amperemeter for direct current measurements in the pA range, developed at PTB. Its ampl…
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A standard method for picoammeter calibrations is the capacitor charging technique, which allows generating traceable currents in the sub-nA range. However, its accuracy is limited by the ac-dc differences of the capacitances involved. The Ultrastable Low-noise Current Amplifier (ULCA) is a novel high-precision amperemeter for direct current measurements in the pA range, developed at PTB. Its amplifier stages, based on resistor networks and op-amps, can be calibrated traceably with a cryogenic current comparator (CCC) system. We compare the results from both independent calibration routes for two different ULCA prototypes. We find agreement between both methods at an uncertainty level below 10 microA/A, limited by the uncertainty of the currents generated with the capacitor charging method. The investigations confirm the superior performance of the new ULCA picoammeter.
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Submitted 6 August, 2014; v1 submitted 21 July, 2014;
originally announced July 2014.
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Traceable precision generation and measurement of pA direct currents
Authors:
Hansjörg Scherer,
Gerd-Dietmar Willenberg,
Dietmar Drung,
Martin Götz,
Eckart Pesel
Abstract:
We present the comparison of results from the generation and the measurement of direct currents in the pA range, performed with traceable state-of-the-art methods at highest accuracy. The currents were generated with the capacitor charging method, and measured with the first prototype of a novel picoammeter developed at PTB. The results confirm the agreement between both methods and the linearity…
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We present the comparison of results from the generation and the measurement of direct currents in the pA range, performed with traceable state-of-the-art methods at highest accuracy. The currents were generated with the capacitor charging method, and measured with the first prototype of a novel picoammeter developed at PTB. The results confirm the agreement between both methods and the linearity of the new picoammeter at an uncertainty level of few microA/A. Also, they shed light on the ac-dc difference of capacitors, crucial for current generation with the capacitor charging method.
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Submitted 18 June, 2014;
originally announced June 2014.
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Supercooled-liquid and plastic-crystalline state in succinonitrile-glutaronitrile mixtures
Authors:
M. Götz,
Th. Bauer,
P. Lunkenheimer,
A. Loidl
Abstract:
We report a thorough characterization of the glassy phases of mixtures of succinonitrile and glutaronitrile via dielectric spectroscopy and differential scanning calorimetry. This system is revealed to be one of the rare examples where both glassy states of matter, a structurally disordered supercooled liquid and an orientationally disordered plastic crystal, can be prepared in the same material.…
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We report a thorough characterization of the glassy phases of mixtures of succinonitrile and glutaronitrile via dielectric spectroscopy and differential scanning calorimetry. This system is revealed to be one of the rare examples where both glassy states of matter, a structurally disordered supercooled liquid and an orientationally disordered plastic crystal, can be prepared in the same material. Both disordered states can be easily supercooled, finally arriving at a structural-glass or a glassy-crystal state. Detailed investigations using broadband dielectric spectroscopy enable a comparison of the glassy dynamics in both phases. Just as previously demonstrated for supercooled-liquid and plastic-crystalline ethanol, our experiments reveal very similar relaxational behavior and glass temperatures of both disordered states. Thus the prominent role of orientational degrees of freedom in the glass transition, suggested on the basis of the findings for ethanol, is fully corroborated by the present work. Moreover, the fragilities of both phases are determined and compared for different mixtures. The findings can be well understood within an energy-landscape based explanation of fragility.
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Submitted 6 November, 2013;
originally announced November 2013.
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Precision quantization of Hall resistance in transferred graphene
Authors:
Mirosław Woszczyna,
Miriam Friedemann,
Martin Götz,
Eckart Pesel,
Klaus Pierz,
Thomas Weimann,
Franz J. Ahlers
Abstract:
We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at current levels exceeding 10…
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We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at current levels exceeding 10 \muA. While such performance had previously only been achieved with epitaxially grown graphene, our experiments demonstrate that transfer steps, inevitable for exfoliated graphene or graphene grown by chemical vapor deposition (CVD), are compatible with the requirements of high quality quantum resistance standards.
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Submitted 23 April, 2012; v1 submitted 8 March, 2012;
originally announced March 2012.
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Ground-state characterization of Nb charge-phase Josephson qubits
Authors:
Hermann Zangerle,
Jens Könemann,
Brigitte Mackrodt,
Ralf Dolata,
Sergey V. Lotkhov,
Sergey A. Bogoslovsky,
Martin Götz,
Alexander B. Zorin
Abstract:
We present investigations of Josephson charge-phase qubits inductively coupled to a radio-frequency driven tank-circuit enabling the readout of the states by measuring the Josephson inductance of the qubit. The circuits including junctions with linear dimensions of 60 nm and 80 nm are fabricated from Nb trilayer and allowing the determination of relevant sample parameters at liquid helium temper…
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We present investigations of Josephson charge-phase qubits inductively coupled to a radio-frequency driven tank-circuit enabling the readout of the states by measuring the Josephson inductance of the qubit. The circuits including junctions with linear dimensions of 60 nm and 80 nm are fabricated from Nb trilayer and allowing the determination of relevant sample parameters at liquid helium temperature. The observed partial suppression of the circulating supercurrent at 4.2 K is explained in the framework of a quantum statistical model. We have probed the ground-state properties of qubit structures with different ratios of the Josephson coupling to Coulomb charging energy at 20 mK, demonstrating both the magnetic control of phase and the electrostatic control of charge on the qubit island.
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Submitted 9 February, 2006; v1 submitted 10 January, 2006;
originally announced January 2006.
