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Hot Carrier Dynamics in Operational Metal Halide Perovskite Solar Cells
Authors:
Hadi Afshari,
Varun Mapara,
Shashi Sourabh,
Megh N. Khanal,
Vincent R. Whiteside,
Rebecca A. Scheidt,
Matthew C. Beard,
Giles E. Eperon,
Ian R. Sellers,
Madalina Furis
Abstract:
One of the main approaches to inhibit carrier cooling in semiconductor systems enabling the study of hot carrier solar cell protocols is the use of concentrated illumination to obtain high power densities and create a phonon bottleneck. This, however, typically also increases the lattice temperature of the solar cells significantly. Accordingly, the solar cells subject to high concentration illumi…
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One of the main approaches to inhibit carrier cooling in semiconductor systems enabling the study of hot carrier solar cell protocols is the use of concentrated illumination to obtain high power densities and create a phonon bottleneck. This, however, typically also increases the lattice temperature of the solar cells significantly. Accordingly, the solar cells subject to high concentration illumination also need to withstand high operating temperatures. Having previously demonstrated the high temperature tolerance of the triple halide perovskite (FA0.8Cs0.2Pb1.02I2.4Br0.6Cl0.02) solar cells, here the hot carrier relaxation dynamics are studied in these devices using high power transient absorption (TA) measurements. In addition to monitoring TA spectra obtained at different time delays, the thermalization mechanisms of hot carriers is mapped with power dependent TA to extract the carrier cooling time in this system under in-operando conditions at various bias conditions that reflect the Jsc, Vmax and Voc of these structures, and subsequently deconvolve the underlying physics of carrier relaxation; as well as track the dynamics of the thermalization close to working conditions of the solar cells. These measurements uncover a complex interaction of hot carrier thermalization involving the temporal carrier density, transport, and extraction, and apparent non-equivalent contributions with respect to non-equilibrium photogenerated electrons and holes in these metal halide perovskite solar cell architectures.
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Submitted 20 November, 2024;
originally announced November 2024.
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Evidence of Hot Carrier Extraction in Metal Halide Perovskite Solar Cells
Authors:
S. Sourabh,
H. Afshari,
V. R. Whiteside,
G. E. Eperon,
R. A. Scheidt,
T. D. Creason,
M. Furis,
A. Kirmani,
B. Saparov,
J. M. Luther,
M. C. Beard,
I. R. Sellers
Abstract:
The presence of hot carriers is presented in the operational properties of an (FA,Cs)Pb(I, Br, Cl)3 solar cell at ambient temperatures and under practical solar concentration. At 100 K, clear evidence of hot carriers is observed in both the high energy tail of the photoluminescence spectra and from the appearance of a non-equilibrium photocurrent at higher fluence in light J-V measurements. At roo…
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The presence of hot carriers is presented in the operational properties of an (FA,Cs)Pb(I, Br, Cl)3 solar cell at ambient temperatures and under practical solar concentration. At 100 K, clear evidence of hot carriers is observed in both the high energy tail of the photoluminescence spectra and from the appearance of a non-equilibrium photocurrent at higher fluence in light J-V measurements. At room temperature, however, the presence of hot carriers in the emission at elevated laser fluence are shown to compete with a gradual red shift in the PL peak energy as photo induced halide segregation begins to occur at higher lattice temperature. The effects of thermionic emission of hot carriers and the presence of a non-equilibrium carrier distribution are also shown to be distinct from simple lattice heating. This results in large unsaturated photocurrents at high powers as the Fermi distribution exceeds that of the heterointerface controlling carrier transport and rectification.
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Submitted 14 November, 2023;
originally announced November 2023.
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Anomalous Transition Magnetic Moments in two-dimensional Dirac Materials
Authors:
Sanghita Sengupta,
Madalina I. Furis,
Oleg P. Sushkov,
Valeri N. Kotov
Abstract:
We show that the magnetic response of atomically thin materials with Dirac spectrum and spin-orbit interactions can exhibit strong dependence on electron-electron interactions. While graphene itself has a very small spin-orbit coupling, various two-dimensional (2D) compounds "beyond graphene" are good candidates to exhibit the strong interplay between spin-orbit and Coulomb interactions. Materials…
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We show that the magnetic response of atomically thin materials with Dirac spectrum and spin-orbit interactions can exhibit strong dependence on electron-electron interactions. While graphene itself has a very small spin-orbit coupling, various two-dimensional (2D) compounds "beyond graphene" are good candidates to exhibit the strong interplay between spin-orbit and Coulomb interactions. Materials in this class include dichalcogenides (such as MoS$_2$ and WSe$_2$), silicene, germanene, as well as 2D topological insulators described by the Kane-Mele model. We present a unified theory for their in-plane magnetic field response leading to "anomalous", i.e. electron interaction dependent transition moments. Our predictions can be potentially used to construct unique magnetic probes with high sensitivity to electron correlations.
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Submitted 13 July, 2020; v1 submitted 5 December, 2019;
originally announced December 2019.
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Indirect Spin Exchange Interaction in Substituted Copper Phthalocyanine Crystalline Thin Films
Authors:
Naveen Rawat,
Zhenwen Pan,
Cody J. Lamarche,
Takahisa Tokumoto,
Judy G. Cherian,
Anthony Wetherby,
Rory Waterman,
Randall L. Headrick,
Stephen A. McGill,
Madalina I. Furis
Abstract:
The origins of indirect spin exchange in crystalline thin films of Copper Octabutoxy Phthalocyanine (Cu-OBPc) are investigated using Magnetic Circular Dichroism (MCD) spectroscopy. These studies are made possible by a solution deposition technique which produces highly ordered films with macroscopic grain sizes suitable for optical studies. For temperatures lower than 2 K, the contribution of a sp…
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The origins of indirect spin exchange in crystalline thin films of Copper Octabutoxy Phthalocyanine (Cu-OBPc) are investigated using Magnetic Circular Dichroism (MCD) spectroscopy. These studies are made possible by a solution deposition technique which produces highly ordered films with macroscopic grain sizes suitable for optical studies. For temperatures lower than 2 K, the contribution of a specific state in the valence band manifold originating from the hybridized lone pair in nitrogen orbitals of the Phthalocyanine ring, bears the Brillouin-like signature of an exchange interaction with the localized $\textit{d}$-shell Cu spins. A comprehensive MCD spectral analysis coupled with a molecular field model of a $σπ-d$ exchange analogous to $\textit{sp-d}$ interactions in Diluted Magnetic Semiconductors (DMS) renders an enhanced Zeeman splitting and a modified $\textit{g}$-factor of -4 for the electrons that mediate the interaction. These studies define an experimental tool for identifying electronic states involved in spin-dependent exchange interactions in organic materials.
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Submitted 12 July, 2015;
originally announced July 2015.
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Spatially, Temporally and Polarization-Resolved Photoluminescence Exploration of Excitons in Crystalline Phthalocyanine Thin Films
Authors:
Naveen Rawat,
Zhenwen Pan,
Lane W. Manning,
Cody J. Lamarche,
Ishviene Cour,
Randall L. Headrick,
Rory Waterman,
Arthur R. Woll,
Madalina I. Furis
Abstract:
The lack of long range order in organic semiconductor thin films prevents the unveiling of the complete nature of excitons in optical experiments, because the diffraction limited beam diameters in the bandgap region far exceed typical crystalline grain sizes. Here we present spatially-, temporally- and polarization-resolved dual photoluminescence/linear dichroism microscopy experiments that invest…
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The lack of long range order in organic semiconductor thin films prevents the unveiling of the complete nature of excitons in optical experiments, because the diffraction limited beam diameters in the bandgap region far exceed typical crystalline grain sizes. Here we present spatially-, temporally- and polarization-resolved dual photoluminescence/linear dichroism microscopy experiments that investigate exciton states within a single crystalline grain in solution-processed phthalocyanine thin films. These experiments reveal the existence of a delocalized singlet exciton, polarized along the high mobility axis in this quasi-1D electronic system. The strong delocalized π orbitals overlap controlled by the molecular stacking along the high mobility axis is responsible for breaking the radiative recombination selection rules. Using our linear dichroism scanning microscopy setup we further established a rotation of molecules (i.e. a structural phase transition) that occurs above 100 K prevents the observation of this exciton at room temperature.
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Submitted 20 April, 2015; v1 submitted 7 July, 2011;
originally announced July 2011.
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Size-dependent orbital symmetry of hole ground states in CdS nanocrystals
Authors:
Boqian Yang,
James E. Schneeloch,
Zhenwen Pan,
Madalina Furis,
Marc Achermann
Abstract:
Using time-resolved photoluminescence spectroscopy, we studied the electronic levels of semiconductor nanocrystals (NCs) with small spin-orbit coupling such as CdS. Low temperature radiative rates indicate that the lowest energy transition changes from orbital allowed to orbital forbidden with decreasing NC size. Our results are well explained by a size-dependent hierarchy of s- and p-orbital ho…
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Using time-resolved photoluminescence spectroscopy, we studied the electronic levels of semiconductor nanocrystals (NCs) with small spin-orbit coupling such as CdS. Low temperature radiative rates indicate that the lowest energy transition changes from orbital allowed to orbital forbidden with decreasing NC size. Our results are well explained by a size-dependent hierarchy of s- and p-orbital hole levels that is in agreement with theoretical predictions. Around the critical NC radius of ~2 nm, we observe an anti-crossing of s- and p-orbital hole levels and large changes in transition rates.
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Submitted 13 October, 2009;
originally announced October 2009.
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Anomalous circular polarization of magneto-photoluminescence from individual CdSe nanocrystals
Authors:
H. Htoon,
S. A. Crooker,
M. Furis,
S. Jeong,
Al. L. Efros,
V. I. Klimov
Abstract:
We study the low-temperature magneto-photoluminescence (PL) from individual CdSe nanocrystals. Nanocrystals having a small "bright" exciton fine structure splitting ($<$0.5 meV) exhibit a conventional left- and right-circularly polarized Zeeman PL doublet in applied magnetic fields. In contrast, nanocrystals with large fine structure splitting ($>$1 meV) show an anomalous magneto-PL polarization…
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We study the low-temperature magneto-photoluminescence (PL) from individual CdSe nanocrystals. Nanocrystals having a small "bright" exciton fine structure splitting ($<$0.5 meV) exhibit a conventional left- and right-circularly polarized Zeeman PL doublet in applied magnetic fields. In contrast, nanocrystals with large fine structure splitting ($>$1 meV) show an anomalous magneto-PL polarization, wherein the lower-energy peak becomes circularly polarized with increasing field, while the higher-energy peak remains linearly polarized. This unusual behavior arises from strong mixing between the absorbing and emitting bright exciton levels due to strong anisotropic exchange interactions.
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Submitted 5 September, 2008;
originally announced September 2008.
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Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices
Authors:
S. A. Crooker,
M. Furis,
X. Lou,
D. L. Smith,
C. Adelmann,
C. J. Palmstrom,
P. A. Crowell
Abstract:
We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically-injected spin polarized currents. Dynamical properties of spin transport are…
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We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically-injected spin polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed.
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Submitted 28 November, 2006;
originally announced November 2006.
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Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization
Authors:
M. Furis,
D. L. Smith,
J. L. Reno,
S. A. Crooker
Abstract:
In bulk n-GaAs epilayers doped near the metal-insulator transition, we study the evolution of electron spin lifetime $τ_s$ as a function of applied lateral electrical bias $E_x$. $τ_s$ is measured via the Hanle effect using magneto-optical Kerr rotation. At low temperatures (T<10 K, where electrons are partially localized and $τ_s > 100$ ns at zero bias), a marked collapse of $τ_s$ is observed w…
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In bulk n-GaAs epilayers doped near the metal-insulator transition, we study the evolution of electron spin lifetime $τ_s$ as a function of applied lateral electrical bias $E_x$. $τ_s$ is measured via the Hanle effect using magneto-optical Kerr rotation. At low temperatures (T<10 K, where electrons are partially localized and $τ_s > 100$ ns at zero bias), a marked collapse of $τ_s$ is observed when $E_x$ exceeds the donor impact ionization threshold at $\sim$10 V/cm. A steep increase in the concentration of warm delocalized electrons -- subject to Dyakonov-Perel spin relaxation -- accounts for the rapid collapse of $τ_s$, and strongly influences electron spin transport in this regime.
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Submitted 30 May, 2006;
originally announced May 2006.
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Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
Authors:
X. Lou,
C. Adelmann,
M. Furis,
S. A. Crooker,
C. J. Palmstrom,
P. A. Crowell
Abstract:
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magn…
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We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport.
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Submitted 3 February, 2006;
originally announced February 2006.
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Time- and Polarization-Resolved Optical Spectroscopy of Colloidal CdSe Nanocrystal Quantum Dots in High Magnetic Fields
Authors:
Madalina Furis,
Jennifer Hollingsworth,
Victor I. Klimov,
Scott A. Crooker
Abstract:
In an effort to elucidate the spin (rather than charge) degrees of freedom in colloidal semiconductor nanocrystal quantum dots, we report on a series of static and time-resolved photoluminescence measurements of colloidal CdSe quantum dots in ultra-high magnetic fields up to 45 Tesla. At low temperatures (1.5 K - 40 K), the steady-state photoluminescence (PL) develops a high degree of circular p…
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In an effort to elucidate the spin (rather than charge) degrees of freedom in colloidal semiconductor nanocrystal quantum dots, we report on a series of static and time-resolved photoluminescence measurements of colloidal CdSe quantum dots in ultra-high magnetic fields up to 45 Tesla. At low temperatures (1.5 K - 40 K), the steady-state photoluminescence (PL) develops a high degree of circular polarization with applied magnetic field, indicating the presence of spin-polarized excitons. Time-resolved PL studies reveal a marked decrease in radiative exciton lifetime with increasing magnetic field and temperature. Except for an initial burst of unpolarized PL immediately following photoexcitation, high-field time-resolved PL measurements reveal a constant degree of circular polarization throughout the entire exciton lifetime, even in the presence of pronounced exciton transfer via Forster energy transfer processes.
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Submitted 28 November, 2005;
originally announced November 2005.
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Bright-Exciton Fine Structure and Anisotropic Exchange in CdSe Nanocrystal Quantum Dots
Authors:
M. Furis,
H. Htoon,
M. A. Petruska,
T. Barrick,
V. I. Klimov,
S. A. Crooker
Abstract:
We report on polarization-resolved resonant photoluminescence (PL) spectroscopy of bright (spin-1) and dark (spin-2) excitons in colloidal CdSe nanocrystal quantum dots. Using high magnetic fields to 33 T, we resonantly excite (and selectively analyze PL from) spin-up or spin-down excitons. At low temperatures (<4K) and above ~10 T, the spectra develop a narrow, circularly polarized peak due to…
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We report on polarization-resolved resonant photoluminescence (PL) spectroscopy of bright (spin-1) and dark (spin-2) excitons in colloidal CdSe nanocrystal quantum dots. Using high magnetic fields to 33 T, we resonantly excite (and selectively analyze PL from) spin-up or spin-down excitons. At low temperatures (<4K) and above ~10 T, the spectra develop a narrow, circularly polarized peak due to spin-flipped bright excitons. Its evolution with magnetic field directly reveals a large (1-2 meV), intrinsic fine structure splitting of bright excitons, due to anisotropic exchange. These findings are supported by time-resolved PL studies and polarization-resolved PL from single nanocrystals.
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Submitted 25 May, 2006; v1 submitted 22 November, 2005;
originally announced November 2005.
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Excitons in Carbon Nanotubes with Broken Time-Reversal Symmetry
Authors:
S. Zaric,
G. N. Ostojic,
J. Shaver,
J. Kono,
O. Portugall,
P. H. Frings,
G. L. J. A. Rikken,
M. Furis,
S. A. Crooker,
X. Wei,
V. C. Moore,
R. H. Hauge,
R. E. Smalley
Abstract:
Near-infrared magneto-optical spectroscopy of single-walled carbon nanotubes reveals two absorption peaks with an equal strength at high magnetic fields ($>$ 55 T). We show that the peak separation is determined by the Aharonov-Bohm phase due to the tube-threading magnetic flux, which breaks the time-reversal symmetry and lifts the valley degeneracy. This field-induced symmetry breaking thus ove…
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Near-infrared magneto-optical spectroscopy of single-walled carbon nanotubes reveals two absorption peaks with an equal strength at high magnetic fields ($>$ 55 T). We show that the peak separation is determined by the Aharonov-Bohm phase due to the tube-threading magnetic flux, which breaks the time-reversal symmetry and lifts the valley degeneracy. This field-induced symmetry breaking thus overcomes the Coulomb-induced intervalley mixing which is predicted to make the lowest exciton state optically inactive (or ``dark'').
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Submitted 15 September, 2005;
originally announced September 2005.
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Reduction Of Spin Injection Efficiency by Interface Spin Scattering
Authors:
R. M. Stroud,
A. T. Hanbicki,
Y. D. Park,
A. G. Petukhov,
B. T. Jonker,
G. Itskos,
G. Kioseoglou,
M. Furis,
A. Petrou
Abstract:
We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering.…
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We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering. An inverse correlation between spin-polarized electron injection efficiency and interface defect density is demonstrated for ZnMnSe/AlGaAs-GaAs spin-LEDs with spin injection efficiencies of 0 to 85%.
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Submitted 26 October, 2001;
originally announced October 2001.
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Interaction of an electron gas with photoexcited electron-hole pairs in modulation-doped GaAs and CdTe quantum wells
Authors:
H. A. Nickel,
T. Yeo,
C. J. Meining,
D. R. Yakovlev,
M. Furis,
A. B. Dzyubenko,
B. D. McCombe,
A. Petrou
Abstract:
The nature of the correlated electron gas and its response to photo-injected electron-hole pairs in nominally undoped and modulation-doped multiple quantum-well (MQW) structures was studied by experiment and theory, revealing a new type of optically-active excitation, magnetoplasmons bound to a mobile valence hole. These excitations are blue-shifted from the corresponding transition of the isola…
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The nature of the correlated electron gas and its response to photo-injected electron-hole pairs in nominally undoped and modulation-doped multiple quantum-well (MQW) structures was studied by experiment and theory, revealing a new type of optically-active excitation, magnetoplasmons bound to a mobile valence hole. These excitations are blue-shifted from the corresponding transition of the isolated charged magnetoexciton X-. The observed blue-shift of X- is larger than that of two-electron negative donor D-, in agreement with theoretical predictions.
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Submitted 4 September, 2001; v1 submitted 14 June, 2001;
originally announced June 2001.