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Different Response of Molecular Aggregation Structure of Styrenic Triblock Copolymer under Cyclic Uniaxial and Biaxial Stretching Modes
Authors:
Nattanee Dechnarong,
Kazutaka Kamitani,
Chao-Hung Cheng,
Shiori Masuda,
Shuhei Nozaki,
Chigusa Nagano,
Aya Fujimoto,
Ayumi Hamada,
Yoshifumi Amamoto,
Ken Kojio,
Atsushi Takahara
Abstract:
Mechanical stretching behavior of poly(styrene-b-ethylene-co-butylene-b-styrene) (SEBS) triblock copolymer (87 wt% polyethylene-co-butylene (PEB) block, 13 wt% polystyrene (PS) block) was investigated by three different stretching and in situ small angle X ray scattering (SAXS) measurements. Strain energy density function was investigated based on the stress stretching ratio (λ) relationship under…
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Mechanical stretching behavior of poly(styrene-b-ethylene-co-butylene-b-styrene) (SEBS) triblock copolymer (87 wt% polyethylene-co-butylene (PEB) block, 13 wt% polystyrene (PS) block) was investigated by three different stretching and in situ small angle X ray scattering (SAXS) measurements. Strain energy density function was investigated based on the stress stretching ratio (λ) relationship under uniaxial, planar extension, and equi-biaxial stretching modes. As the result, cross effect of strain represented by second invariants of the deformation tensor (I2) existed and only Ogden model can be used to fit the data. In the cyclic stretch testing, SEBS exhibited smaller hysteresis during cyclic equi biaxial stretching mode than for uniaxial stretching one. λ and stretching ratio obtained from crystal planes by SAXS (λSAXS) were compared to investigate relationship between microdomain structure change and macroscopic mechanical property. SAXS measurement revealed that affine deformation occurred in the smaller λ region for both uniaxial and equi biaxial stretching modes and deviation from affine deformation occurred for uniaxial stretching mode at the larger λ region. This is because entangled PEB loop chains could work as cross-linking points when films are stretched by equi-biaxial stretching mode.
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Submitted 3 January, 2021;
originally announced January 2021.
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Systematic clustering algorithm for chromatin accessibility data and its application to hematopoietic cells
Authors:
Azusa Tanaka,
Yasuhiro Ishitsuka,
Hiroki Ohta,
Akihiro Fujimoto,
Jun-ichirou Yasunaga,
Masao Matsuoka
Abstract:
The huge amount of data acquired by high-throughput sequencing requires data reduction for effective analysis. Here we give a clustering algorithm for genome-wide open chromatin data using a new data reduction method. This method regards the genome as a string of $1$s and $0$s based on a set of peaks and calculates the Hamming distances between the strings. This algorithm with the systematically o…
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The huge amount of data acquired by high-throughput sequencing requires data reduction for effective analysis. Here we give a clustering algorithm for genome-wide open chromatin data using a new data reduction method. This method regards the genome as a string of $1$s and $0$s based on a set of peaks and calculates the Hamming distances between the strings. This algorithm with the systematically optimized set of peaks enables us to quantitatively evaluate differences between samples of hematopoietic cells and classify cell types, potentially leading to a better understanding of leukemia pathogenesis.
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Submitted 26 November, 2020; v1 submitted 23 December, 2019;
originally announced December 2019.
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Temperature dependence of universal conductance fluctuation due to development of weak localization in graphene
Authors:
D. Terasawa,
A. Fukuda,
A. Fujimoto,
Y. Ohno,
K. Matsumoto
Abstract:
The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this behavior can be attributed to the decrease in the inelastic scattering (dephasing) rate, which enhances the weak localization (WL) correction to resistivity. Followi…
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The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this behavior can be attributed to the decrease in the inelastic scattering (dephasing) rate, which enhances the weak localization (WL) correction to resistivity. Following a previous report that explained the relationship between the universal conductance fluctuation (UCF) and WL regarding the gate voltage dependence (D. Terasawa, et al., Phys. Rev. B 95 125427 (2017)), we propose that the temperature dependence of the UCF in monolayer graphene can be interpreted by the WL theory.
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Submitted 6 September, 2017; v1 submitted 1 September, 2017;
originally announced September 2017.
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Relationship between conductance fluctuation and weak localization in graphene
Authors:
D. Terasawa,
A. Fukuda,
A. Fujimoto,
Y. Ohno,
Y. Kanai,
K. Matsumoto
Abstract:
The relationship between the universal conductance fluctuation and the weak localization effect in monolayer graphene is investigated. By comparing experimental results with the predictions of the weak localization theory for graphene, we find that the ratio of the elastic intervalley scattering time to the inelastic dephasing time varies in accordance with the conductance fluctuation; this is a c…
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The relationship between the universal conductance fluctuation and the weak localization effect in monolayer graphene is investigated. By comparing experimental results with the predictions of the weak localization theory for graphene, we find that the ratio of the elastic intervalley scattering time to the inelastic dephasing time varies in accordance with the conductance fluctuation; this is a clear evidence connecting the universal conductance fluctuation with the weak localization effect. We also find a series of scattering lengths that are related to the phase shifts caused by magnetic flux by Fourier analysis.
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Submitted 21 March, 2017;
originally announced March 2017.
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Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins
Authors:
Eisuke Abe,
Akira Fujimoto,
Junichi Isoya,
Satoshi Yamasaki,
Kohei M. Itoh
Abstract:
Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear spins on the donor electron spin is systematically studied. The linewidth as a function of f shows a good agreement with theoretical analysis. We also report the…
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Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear spins on the donor electron spin is systematically studied. The linewidth as a function of f shows a good agreement with theoretical analysis. We also report the phase memory time T_M of the donor electron spin dependent on both f and the crystal axis relative to the external magnetic field.
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Submitted 16 December, 2005;
originally announced December 2005.
