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Showing 1–7 of 7 results for author: Fuccillo, M K

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  1. arXiv:1503.05424  [pdf

    cond-mat.str-el cond-mat.mtrl-sci

    Gold-Gold Bonding: The Key to Stabilizing the 19-Electron Ternary Phases LnAuSb (Ln = La-Nd and Sm) as New Dirac Semimetals

    Authors: Elizabeth M. Seibel, Leslie M. Schoop, Weiwei Xie, Quinn D. Gibson, James B. Webb, Michael K. Fuccillo, Jason W. Krizan, Robert J. Cava

    Abstract: We report a new family of ternary 111 hexagonal LnAuSb (Ln = La-Nd, Sm) compounds that, with a 19 valence electron count, has one extra electron compared to all other known LnAuZ compound. The "19th" electron is accommodated by Au-Au bonding between the layers; this Au-Au interaction drives the phases to crystallize in the YPtAs-type structure rather than the more common LiGaGe-type. This is criti… ▽ More

    Submitted 18 March, 2015; originally announced March 2015.

    Comments: 32 pages, 8 Figures

    Journal ref: J. Am. Chem. Soc., 2015, 137, 1282-1289

  2. arXiv:1502.03127  [pdf

    cond-mat.mtrl-sci

    A large new family of filled skutterudites stabilized by electron count

    Authors: Huixia Luo, Jason W. Krizan, Lukas Muechler, Neel Haldolaarachchige, Tomasz Klimczuk, Weiwei Xie, Michael K. Fuccillo, Claudia Felser, Robert J. Cava

    Abstract: Based on the interplay of theory and experiment, a large new family of filled group 9 (Co, Rh and Ir) skutterudites is designed and synthesized. The new materials fill the empty cages in the structures of the known binary CoSb3, RhSb3 and IrSb3 skutterudites with alkaline, alkaline earth, and rare earth atoms to create compounds of the type AyB4X12; A atoms fill the cages to a fraction y, B are th… ▽ More

    Submitted 12 February, 2015; v1 submitted 10 February, 2015; originally announced February 2015.

    Comments: A revised version with the title"A large family of filled skutterudites stabilized by electron count"will appear in Nature Communications

  3. arXiv:1405.0402  [pdf, other

    cond-mat.mtrl-sci

    Quasi One Dimensional Dirac Electrons on the Surface of Ru$_2$Sn$_3$

    Authors: Q. D. Gibson, D. Evtushinksy, A. N. Yaresko, A. B. Zabolotnyy, Mazhar N. Ali, M. K. Fuccillo, J. Van den Brink, B. Büchner, R. J. Cava, S. V. Borisenko

    Abstract: We present an ARPES study of the surface states of Ru$_2$Sn$_3$, a new type of a strong 3D topological insulator (TI). In contrast to currently known 3D TIs, which display two-dimensional Dirac cones with linear isotropic dispersions crossing through one point in the surface Brillouin Zone (SBZ), the surface states on Ru$_2$Sn$_3$ are highly anisotropic, displaying an almost flat dispersion along… ▽ More

    Submitted 2 May, 2014; originally announced May 2014.

    Comments: 4 figures, includes supplementary information

  4. arXiv:1305.3620  [pdf

    cond-mat.supr-con

    Superconductivity in the Cu(Ir1-xPtx)2Se4 Spinel

    Authors: Huixia Luo, Tomasz Klimczuk, Lukas Muechler, Leslie Schoop, Daigorou Hirai, M. K. Fuccillo, C. Felser, R. J. Cava

    Abstract: We report the observation of superconductivity in the CuIr2Se4 spinel induced by partial substitution of Pt for Ir. The optimal doping level for superconductivity in Cu(Ir1-xPtx)2Se4 is x = 0.2, where Tc is 1.76 K. A superconducting Tc vs. composition dome is established between the metallic, normal conductor CuIr2Se4 and semiconducting CuIrPtSe4. Electronic structure calculations show that the op… ▽ More

    Submitted 15 May, 2013; originally announced May 2013.

  5. arXiv:1302.1059  [pdf

    cond-mat.mtrl-sci

    Crystal Structure and Chemistry of Topological Insulators

    Authors: R. J. Cava, Huiwen Ji, M. K. Fuccillo, Q. D. Gibson, Y. S. Hor

    Abstract: Topological surface states, a new kind of electronic state of matter, have recently been observed on the cleaved surfaces of crystals of a handful of small band gap semiconductors. The underlying chemical factors that enable these states are crystal symmetry, the presence of strong spin orbit coupling, and an inversion of the energies of the bulk electronic states that normally contribute to the v… ▽ More

    Submitted 5 February, 2013; originally announced February 2013.

    Comments: Submitted to Journal of Materials Chemistry, 47 double spaced pages, 9 figures

    Journal ref: J. Mater. Chem. C, 2013, 1, 3176-3189

  6. arXiv:1205.2924  [pdf

    cond-mat.mtrl-sci

    Bi2Te1.6S1.4 - a Topological Insulator in the Tetradymite Family

    Authors: Huiwen Ji, J. M. Allred, M. K. Fuccillo, M. E. Charles, M. Neupane, L. A. Wray, M. Z. Hasan, R. J. Cava

    Abstract: We describe the crystal growth, crystal structure, and basic electrical properties of Bi2Te1.6S1.4, which incorporates both S and Te in its Tetradymite quintuple layers in the motif -[Te0.8S0.2]-Bi-S-Bi-[Te0.8S0.2]-. This material differs from other Tetradymites studied as topological insulators due to the increased ionic character that arises from its significant S content. Bi2Te1.6S1.4 forms hig… ▽ More

    Submitted 13 May, 2012; originally announced May 2012.

    Comments: To be published in Physical Review B Rapid Communications 16 douuble spaced pages. 4 figures 1 table

  7. Low carrier concentration crystals of the topological insulator Bi$_2$Te$_2$Se

    Authors: Shuang Jia, Huiwen Ji, E. Climent-Pascual, M. K. Fuccillo, M. E. Charles, Jun Xiong, N. P. Ong, R. J. Cava

    Abstract: We report the characterization of Bi$_2$Te$_2$Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal growth techniques. X-ray diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity ($> 1 \mathrm{Ωcm}$) and low carrier concentration (… ▽ More

    Submitted 7 December, 2011; originally announced December 2011.

    Comments: 16 pages, 5 figures, accepted by PRB