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Gold-Gold Bonding: The Key to Stabilizing the 19-Electron Ternary Phases LnAuSb (Ln = La-Nd and Sm) as New Dirac Semimetals
Authors:
Elizabeth M. Seibel,
Leslie M. Schoop,
Weiwei Xie,
Quinn D. Gibson,
James B. Webb,
Michael K. Fuccillo,
Jason W. Krizan,
Robert J. Cava
Abstract:
We report a new family of ternary 111 hexagonal LnAuSb (Ln = La-Nd, Sm) compounds that, with a 19 valence electron count, has one extra electron compared to all other known LnAuZ compound. The "19th" electron is accommodated by Au-Au bonding between the layers; this Au-Au interaction drives the phases to crystallize in the YPtAs-type structure rather than the more common LiGaGe-type. This is criti…
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We report a new family of ternary 111 hexagonal LnAuSb (Ln = La-Nd, Sm) compounds that, with a 19 valence electron count, has one extra electron compared to all other known LnAuZ compound. The "19th" electron is accommodated by Au-Au bonding between the layers; this Au-Au interaction drives the phases to crystallize in the YPtAs-type structure rather than the more common LiGaGe-type. This is critical, as the YPtAs structure type has the symmetry-allowed band crossing necessary for the formation of Dirac semimetals. Band structure, density of stats, and crystal orbital calculations confirm this picture, which results in a nearly complete band gap between full and empty electronic states and stable compounds; we can thus present a structural stability phase diagram for the LnAuZ (Ln = Ge, As, Sn, Sb, Pb, Bi) family of phases. Those calculations also show that LaAuSb has a bulk Dirac cone below the Fermi level. The YPtAs-type LnAuSb family reported here is an example of the uniqueness of gold chemistry applied to a rigidly closed shell system in an unconventional way.
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Submitted 18 March, 2015;
originally announced March 2015.
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A large new family of filled skutterudites stabilized by electron count
Authors:
Huixia Luo,
Jason W. Krizan,
Lukas Muechler,
Neel Haldolaarachchige,
Tomasz Klimczuk,
Weiwei Xie,
Michael K. Fuccillo,
Claudia Felser,
Robert J. Cava
Abstract:
Based on the interplay of theory and experiment, a large new family of filled group 9 (Co, Rh and Ir) skutterudites is designed and synthesized. The new materials fill the empty cages in the structures of the known binary CoSb3, RhSb3 and IrSb3 skutterudites with alkaline, alkaline earth, and rare earth atoms to create compounds of the type AyB4X12; A atoms fill the cages to a fraction y, B are th…
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Based on the interplay of theory and experiment, a large new family of filled group 9 (Co, Rh and Ir) skutterudites is designed and synthesized. The new materials fill the empty cages in the structures of the known binary CoSb3, RhSb3 and IrSb3 skutterudites with alkaline, alkaline earth, and rare earth atoms to create compounds of the type AyB4X12; A atoms fill the cages to a fraction y, B are the group 9 transition metals, and X is a mixture of electronegative main group elements chosen to achieve chemical stability by adjusting the electron counts to electron-precise values. Forty-three new compounds are reported, antimony-tin and phosphorous-silicon based, with 63 compositional variations presented. The new family of compounds is large and general. The results described here can be extended to the synthesis of hundreds of new group 9 filled skutterudites.
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Submitted 12 February, 2015; v1 submitted 10 February, 2015;
originally announced February 2015.
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Quasi One Dimensional Dirac Electrons on the Surface of Ru$_2$Sn$_3$
Authors:
Q. D. Gibson,
D. Evtushinksy,
A. N. Yaresko,
A. B. Zabolotnyy,
Mazhar N. Ali,
M. K. Fuccillo,
J. Van den Brink,
B. Büchner,
R. J. Cava,
S. V. Borisenko
Abstract:
We present an ARPES study of the surface states of Ru$_2$Sn$_3$, a new type of a strong 3D topological insulator (TI). In contrast to currently known 3D TIs, which display two-dimensional Dirac cones with linear isotropic dispersions crossing through one point in the surface Brillouin Zone (SBZ), the surface states on Ru$_2$Sn$_3$ are highly anisotropic, displaying an almost flat dispersion along…
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We present an ARPES study of the surface states of Ru$_2$Sn$_3$, a new type of a strong 3D topological insulator (TI). In contrast to currently known 3D TIs, which display two-dimensional Dirac cones with linear isotropic dispersions crossing through one point in the surface Brillouin Zone (SBZ), the surface states on Ru$_2$Sn$_3$ are highly anisotropic, displaying an almost flat dispersion along certain high-symmetry directions. This results in quasi-one dimensional (1D) Dirac electronic states throughout the SBZ that we argue are inherited from features in the bulk electronic structure of Ru$_2$Sn$_3$, where the bulk conduction bands are highly anisotropic. Unlike previous experimentally characterized TIs, the topological surface states of Ru$_2$Sn$_3$ are the result of a d-p band inversion rather than an s-p band inversion. The observed surface states are the topological equivalent to a single 2D Dirac cone at the surface Brillouin zone
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Submitted 2 May, 2014;
originally announced May 2014.
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Superconductivity in the Cu(Ir1-xPtx)2Se4 Spinel
Authors:
Huixia Luo,
Tomasz Klimczuk,
Lukas Muechler,
Leslie Schoop,
Daigorou Hirai,
M. K. Fuccillo,
C. Felser,
R. J. Cava
Abstract:
We report the observation of superconductivity in the CuIr2Se4 spinel induced by partial substitution of Pt for Ir. The optimal doping level for superconductivity in Cu(Ir1-xPtx)2Se4 is x = 0.2, where Tc is 1.76 K. A superconducting Tc vs. composition dome is established between the metallic, normal conductor CuIr2Se4 and semiconducting CuIrPtSe4. Electronic structure calculations show that the op…
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We report the observation of superconductivity in the CuIr2Se4 spinel induced by partial substitution of Pt for Ir. The optimal doping level for superconductivity in Cu(Ir1-xPtx)2Se4 is x = 0.2, where Tc is 1.76 K. A superconducting Tc vs. composition dome is established between the metallic, normal conductor CuIr2Se4 and semiconducting CuIrPtSe4. Electronic structure calculations show that the optimal Tc occurs near the electron count of a large peak in the calculated electronic density of states and that CuIrPtSe4 is a band-filled insulator. Characterization of the superconducting state in this heavy metal spinel through determination of ΔC/γTc, indicates that it is BCS-like. The relatively high upper critical field at the optimal superconducting composition (Hc2(0) = 3.2 T) is much larger than that reported for analogous rhodium spinels and is comparable to or exceeds the Pauli field (mu0Hp), suggesting that strong spin orbit coupling may influence the superconducting state. Further, comparison to doped CuIr2S4 suggests that superconductivity in iridium spinels is not necessarily associated with the destabilization of a charge-ordered spin-paired state through doping.
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Submitted 15 May, 2013;
originally announced May 2013.
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Crystal Structure and Chemistry of Topological Insulators
Authors:
R. J. Cava,
Huiwen Ji,
M. K. Fuccillo,
Q. D. Gibson,
Y. S. Hor
Abstract:
Topological surface states, a new kind of electronic state of matter, have recently been observed on the cleaved surfaces of crystals of a handful of small band gap semiconductors. The underlying chemical factors that enable these states are crystal symmetry, the presence of strong spin orbit coupling, and an inversion of the energies of the bulk electronic states that normally contribute to the v…
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Topological surface states, a new kind of electronic state of matter, have recently been observed on the cleaved surfaces of crystals of a handful of small band gap semiconductors. The underlying chemical factors that enable these states are crystal symmetry, the presence of strong spin orbit coupling, and an inversion of the energies of the bulk electronic states that normally contribute to the valence and conduction bands. The goals of this review are to briefly introduce the physics of topological insulators to a chemical audience and to describe the chemistry, defect chemistry, and crystal structures of the compounds in this emergent field.
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Submitted 5 February, 2013;
originally announced February 2013.
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Bi2Te1.6S1.4 - a Topological Insulator in the Tetradymite Family
Authors:
Huiwen Ji,
J. M. Allred,
M. K. Fuccillo,
M. E. Charles,
M. Neupane,
L. A. Wray,
M. Z. Hasan,
R. J. Cava
Abstract:
We describe the crystal growth, crystal structure, and basic electrical properties of Bi2Te1.6S1.4, which incorporates both S and Te in its Tetradymite quintuple layers in the motif -[Te0.8S0.2]-Bi-S-Bi-[Te0.8S0.2]-. This material differs from other Tetradymites studied as topological insulators due to the increased ionic character that arises from its significant S content. Bi2Te1.6S1.4 forms hig…
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We describe the crystal growth, crystal structure, and basic electrical properties of Bi2Te1.6S1.4, which incorporates both S and Te in its Tetradymite quintuple layers in the motif -[Te0.8S0.2]-Bi-S-Bi-[Te0.8S0.2]-. This material differs from other Tetradymites studied as topological insulators due to the increased ionic character that arises from its significant S content. Bi2Te1.6S1.4 forms high quality crystals from the melt and is the S-rich limit of the ternary Bi-Te-S γ-Tetradymite phase at the melting point. The native material is n-type with a low resistivity; Sb substitution, with adjustment of the Te to S ratio, results in a crossover to p-type and resistive behavior at low temperatures. Angle resolved photoemission study shows that topological surface states are present, with the Dirac point more exposed than it is in Bi2Te3 and similar to that seen in Bi2Te2Se. Single crystal structure determination indicates that the S in the outer chalcogen layers is closer to the Bi than the Te, and therefore that the layers supporting the surface states are corrugated on the atomic scale.
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Submitted 13 May, 2012;
originally announced May 2012.
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Low carrier concentration crystals of the topological insulator Bi$_2$Te$_2$Se
Authors:
Shuang Jia,
Huiwen Ji,
E. Climent-Pascual,
M. K. Fuccillo,
M. E. Charles,
Jun Xiong,
N. P. Ong,
R. J. Cava
Abstract:
We report the characterization of Bi$_2$Te$_2$Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal growth techniques. X-ray diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity ($> 1 \mathrm{Ωcm}$) and low carrier concentration (…
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We report the characterization of Bi$_2$Te$_2$Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal growth techniques. X-ray diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity ($> 1 \mathrm{Ωcm}$) and low carrier concentration ($\sim 5\times 10^{16}$/cm$^3$) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.
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Submitted 7 December, 2011;
originally announced December 2011.
