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The Universality of Thermal Transport in Amorphous Nanowires at Low Temperatures
Authors:
Adib Tavakoli,
Christophe Blanc,
Hossein Ftouni,
Kunal Lulla,
Andrew Fefferman,
Eddy Collin,
Olivier Bourgeois
Abstract:
Thermal transport properties of amorphous materials at low temperatures are governed by the interaction between phonons and localized excitations referred to as tunneling two level systems (TLS). The temperature variation of the thermal conductivity of these amorphous materials is considered as universal and is characterized by a quadratic power law. This is well described by the phenomenological…
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Thermal transport properties of amorphous materials at low temperatures are governed by the interaction between phonons and localized excitations referred to as tunneling two level systems (TLS). The temperature variation of the thermal conductivity of these amorphous materials is considered as universal and is characterized by a quadratic power law. This is well described by the phenomenological TLS model even though its microscopic explanation is still elusive. Here, by scaling down to the nanometer scale amorphous systems much below the bulk phonon-TLS mean free path, we probed the robustness of that model in restricted geometry systems. Using very sensitive thermal conductance measurements, we demonstrate that the temperature dependence of the thermal conductance of silicon nitride nanostructures remains mostly quadratic independently of the nanowire section. It is not following the cubic power law in temperature as expected in a Casimir-Ziman regime of boundary limited thermal transport. This shows a thermal transport counter intuitively dominated by phonon-TLS interactions and not by phonon-boundary scattering in the nanowires. This could be ascribed to an unexpected high density of TLS on the surfaces which still dominates the phonon diffusion processes at low temperatures and explains why the universal quadratic temperature dependence of thermal conductance still holds for amorphous nanowires.
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Submitted 24 March, 2017;
originally announced March 2017.
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Specific heat measurement of thin suspended SiN membrane from 8 K to 300 K using the 3$ω$-V$\ddot{o}$lklein method
Authors:
Hossein Ftouni,
Dimitri Tainoff,
Jacques Richard,
Kunal Lulla,
Jean Guidi,
Eddy Collin,
Olivier Bourgeois
Abstract:
We present a specific heat measurement technique adapted to thin or very thin suspended membranes from low temperature (8 K) to 300 K. The presented device allows the measurement of the heat capacity of a 70 ng silicon nitride membrane (50 or 100 nm thick), corresponding to a heat capacity of 1.4x10$^{-10}$ J/K at 8 K and 5.1x10$^{-8}$ J/K at 300 K. Measurements are performed using the 3$ω$ method…
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We present a specific heat measurement technique adapted to thin or very thin suspended membranes from low temperature (8 K) to 300 K. The presented device allows the measurement of the heat capacity of a 70 ng silicon nitride membrane (50 or 100 nm thick), corresponding to a heat capacity of 1.4x10$^{-10}$ J/K at 8 K and 5.1x10$^{-8}$ J/K at 300 K. Measurements are performed using the 3$ω$ method coupled to the V$\ddot{o}$lklein geometry. This configuration allows the measurement of both specific heat and thermal conductivity within the same experiment. A transducer (heater/thermometer) is used to create an oscillation of the heat flux on the membrane; the voltage oscillation appearing at the third harmonic which contains the thermal information is measured using a Wheatstone bridge set-up. The heat capacity measurement is performed by measuring the variation of the 3$ω$ voltage over a wide frequency range and by fitting the experimental data using a thermal model adapted to the heat transfer across the membrane. The experimental data are compared to a regular Debye model; the specific heat exhibits features commonly seen for glasses at low temperature.
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Submitted 24 November, 2015;
originally announced November 2015.
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The thermal conductivity of silicon nitride membranes is not sensitive to stress
Authors:
Hossein Ftouni,
Christophe Blanc,
Dimitri Tainoff,
Andrew D. Fefferman,
Martial Defoort,
Kunal J. Lulla,
Jacques Richard,
Eddy Collin,
Olivier Bourgeois
Abstract:
We have measured the thermal properties of suspended membranes from 10 K to 300 K for two amplitudes of internal stress (about 0.1 GPa and 1 GPa) and for two different thicknesses (50 nm and 100 nm). The use of the original 3 ω-Volklein method has allowed the extraction of both the specific heat and the thermal conductivity of each SiN membrane over a wide temperature range. The mechanical propert…
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We have measured the thermal properties of suspended membranes from 10 K to 300 K for two amplitudes of internal stress (about 0.1 GPa and 1 GPa) and for two different thicknesses (50 nm and 100 nm). The use of the original 3 ω-Volklein method has allowed the extraction of both the specific heat and the thermal conductivity of each SiN membrane over a wide temperature range. The mechanical properties of the same substrates have been measured at helium temperatures using nanomechanical techniques. Our measurements show that the thermal transport in freestanding SiN membranes is not affected by the presence of internal stress. Consistently, mechanical dissipation is also unaffected even though Qs increase with increasing tensile stress. We thus demonstrate that the theory developed by Wu and Yu [Phys. Rev. B 84, 174109 (2011)] does not apply to this amorphous material in this stress range. On the other hand, our results can be viewed as a natural consequence of the "dissipation dilution" argument [Y. L. Huang and P. R. Saulson, Rev. Sci. Instrum. 69, 544 (1998)] which has been introduced in the context of mechanical damping.
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Submitted 5 June, 2015;
originally announced June 2015.
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Highly sensitive thermal conductivity measurements of suspended membranes (SiN and diamond) using a 3w-Volklein method
Authors:
A. Sikora,
H. Ftouni,
J. Richard,
C. Hébert,
D. Eon,
F. Omnès,
O. Bourgeois
Abstract:
A suspended system for measuring the thermal properties of membranes is presented. The sensitive thermal measurement is based on the 3$ω$ dynamic method coupled to a V$\ddot{o}$lklein geometry. The device obtained using micro-machining processes allows the measurement of the in-plane thermal conductivity of a membrane with a sensitivity of less than 10nW/K (+/-$5x10^{-3}$Wm$^{-1}K^{-1}$ at room te…
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A suspended system for measuring the thermal properties of membranes is presented. The sensitive thermal measurement is based on the 3$ω$ dynamic method coupled to a V$\ddot{o}$lklein geometry. The device obtained using micro-machining processes allows the measurement of the in-plane thermal conductivity of a membrane with a sensitivity of less than 10nW/K (+/-$5x10^{-3}$Wm$^{-1}K^{-1}$ at room temperature) and a very high resolution ($ΔK/K =10^{-3}$). A transducer (heater/thermometer) centered on the membrane is used to create an oscillation of the heat flux and to measure the temperature oscillation at the third harmonic using a Wheatstone bridge set-up. Power as low as 0.1nanoWatt has been measured at room temperature. The method has been applied to measure thermal properties of low stress silicon nitride and polycrystalline diamond membranes with thickness ranging from 100 nm to 400 nm. The thermal conductivity measured on the polycrystalline diamond membrane support a significant grain size effect on the thermal transport.
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Submitted 19 January, 2012;
originally announced January 2012.
