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Manifestation of nonlocal electron-electron interaction in graphene
Authors:
Søren Ulstrup,
Malte Schüler,
Marco Bianchi,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Tim Wehling,
Philip Hofmann
Abstract:
Graphene is an ideal platform to study many-body effects due to its semimetallic character and the possibility to dope it over a wide range. Here we study the width of graphene's occupied $π$-band as a function of doping using angle-resolved photoemission. Upon increasing electron doping, we observe the expected shift of the band to higher binding energies. However, this shift is not rigid and the…
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Graphene is an ideal platform to study many-body effects due to its semimetallic character and the possibility to dope it over a wide range. Here we study the width of graphene's occupied $π$-band as a function of doping using angle-resolved photoemission. Upon increasing electron doping, we observe the expected shift of the band to higher binding energies. However, this shift is not rigid and the bottom of the band moves less than the Dirac point. We show that the observed shift cannot be accounted for by band structure calculations in the local density approximation but that non-local exchange interactions must be taken into account.
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Submitted 2 April, 2016;
originally announced April 2016.
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Ultrafast Electron Dynamics in Epitaxial Graphene Investigated with Time- and Angle-Resolved Photoemission Spectroscopy
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Alberto Crepaldi,
Federico Cilento,
Michele Zacchigna,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphe…
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In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the $π$ band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.
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Submitted 5 January, 2016;
originally announced January 2016.
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Tunable Carrier Multiplication and Cooling in Graphene
Authors:
Jens C. Johannsen,
Søren Ulstrup,
Alberto Crepaldi,
Federico Cilento,
Michele Zacchigna,
Jill A. Miwa,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Phil D. C. King,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium c…
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Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less ($p$-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.
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Submitted 4 January, 2016;
originally announced January 2016.
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Terahertz ratchet effects in graphene with a lateral superlattice
Authors:
P. Olbrich,
J. Kamann,
M. König,
J. Munzert,
L. Tutsch,
J. Eroms,
D. Weiss,
Ming-Hao Liu,
L. E. Golub,
E. L. Ivchenko,
V. V. Popov,
D. V. Fateev,
K. V. Mashinsky,
F. Fromm,
Th. Seyller,
S. D. Ganichev
Abstract:
Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures.…
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Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures. We show that the ratchet photocurrent excited by terahertz radiation and sensitive to the radiation polarization state can be efficiently controlled by the back gate driving the system through the Dirac point as well as by the lateral asymmetry varied by applying unequal voltages to the DGG subgratings. The ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, sensitive to the corresponding polarization of the driving electromagnetic force. The experimental data are analyzed for the electronic and plasmonic ratchets taking into account the calculated potential profile and the near field acting on carriers in graphene. We show that the photocurrent generation is based on a combined action of a spatially periodic in-plane potential and the spatially modulated light due to the near field effects of the light diffraction.
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Submitted 27 October, 2015;
originally announced October 2015.
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Ramifications of Optical Pumping on the Interpretation of Time-Resolved Photoemission Experiments on Graphene
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Federico Cilento,
Alberto Crepaldi,
Jill A. Miwa,
Michele Zacchigna,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Phil D. C. King,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system…
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In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system. These processes can severely affect a correct interpretation of the data by masking the out-of-equilibrium electron dynamics intrinsic to the sample. In this study, we show that such effects indeed influence TR-ARPES data of graphene on a silicon carbide (SiC) substrate. In particular, we find a time- and laser fluence-dependent spectral shift and broadening of the acquired spectra, and unambiguously show the presence of a double pump excitation. The dynamics of these effects is slower than the electron dynamics in the graphene sample, thereby permitting us to deconvolve the signals in the time domain. Our results demonstrate that complex pump-related processes should always be considered in the experimental setup and data analysis.
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Submitted 5 February, 2015;
originally announced February 2015.
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Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Federico Cilento,
Jill A. Miwa,
Alberto Crepaldi,
Michele Zacchigna,
Cephise Cacho,
Richard Chapman,
Emma Springate,
Samir Mammadov,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Phil D. C. King,
Philip Hofmann
Abstract:
Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by to…
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Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by topological in-gap states, or that the electronic structure could be altogether changed by many-body effects. Here we directly follow the excited carriers in bilayer graphene on a femtosecond time scale, using ultrafast time- and angle-resolved photoemission. We find a behavior consistent with a single-particle band gap. Compared to monolayer graphene, the existence of this band gap leads to an increased carrier lifetime in the minimum of the lowest conduction band. This is in sharp contrast to the second sub-state of the conduction band, in which the excited electrons decay through fast, phonon-assisted inter-band transitions.
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Submitted 1 March, 2014;
originally announced March 2014.
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Direct view on the ultrafast carrier dynamics in graphene
Authors:
Jens Christian Johannsen,
Søren Ulstrup,
Federico Cilento,
Alberto Crepaldi,
Michele Zacchigna,
Cephise Cacho,
I. C. Edmond Turcu,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene co…
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The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene could so far only be accessed indirectly, we here present a direct time-resolved view on the Dirac cone by angle-resolved photoemission (ARPES). This allows us to show the quasi-instant thermalisation of the electron gas to a temperature of more than 2000 K; to determine the time-resolved carrier density; to disentangle the subsequent decay into excitations of optical phonons and acoustic phonons (directly and via supercollisions); and to show how the presence of the hot carrier distribution affects the lifetime of the states far below the Fermi energy.
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Submitted 9 April, 2013;
originally announced April 2013.
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Fabry-Perot enhanced Faraday rotation in graphene
Authors:
Nicolas Ubrig,
Iris Crassee,
Julien Levallois,
Ievgeniia O. Nedoliuk,
Felix Fromm,
Michl Kaiser,
Thomas Seyller,
Alexey B. Kuzmenko
Abstract:
We demonstrate that giant Faraday rotation in graphene in the terahertz range due to the cyclotron resonance is further increased by constructive Fabry-Perot interference in the supporting substrate. Simultaneously, an enhanced total transmission is achieved, making this effect doubly advantageous for graphene-based magneto-optical applications. As an example, we present far-infrared spectra of ep…
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We demonstrate that giant Faraday rotation in graphene in the terahertz range due to the cyclotron resonance is further increased by constructive Fabry-Perot interference in the supporting substrate. Simultaneously, an enhanced total transmission is achieved, making this effect doubly advantageous for graphene-based magneto-optical applications. As an example, we present far-infrared spectra of epitaxial multilayer graphene grown on the C-face of 6H-SiC, where the interference fringes are spectrally resolved and a Faraday rotation up to 0.15 radians (9°) is attained. Further, we discuss and compare other ways to increase the Faraday rotation using the principle of an optical cavity.
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Submitted 12 October, 2013; v1 submitted 7 March, 2013;
originally announced March 2013.
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Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
Authors:
F. Fromm,
M. H. Oliveira Jr,
A. Molina-Sánchez,
M. Hundhausen,
J. M. J. Lopes,
H. Riechert,
L. Wirtz,
T. Seyller
Abstract:
We report a Raman study of the so-called buffer layer with $(6\sqrt3\times6\sqrt3)R30^{\circ}$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon…
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We report a Raman study of the so-called buffer layer with $(6\sqrt3\times6\sqrt3)R30^{\circ}$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer-layer.
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Submitted 12 December, 2012; v1 submitted 7 December, 2012;
originally announced December 2012.
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Detecting the local transport properties and the dimensionality of transport of epitaxial graphene by a multi-point probe approach
Authors:
Lucas Barreto,
Edward Perkins,
Jens Johannsen,
Søren Ulstrup,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Philip Hofmann
Abstract:
The electronic transport properties of epitaxial monolayer graphene (MLG) and hydrogen-intercalated quasi free-standing bilayer graphene (QFBLG) on SiC(0001) are investigated by micro multi-point probes. Using a probe with 12 contacts, we perform four-point probe measurements with the possibility to effectively vary the contact spacing over more than one order of magnitude, allowing us to establis…
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The electronic transport properties of epitaxial monolayer graphene (MLG) and hydrogen-intercalated quasi free-standing bilayer graphene (QFBLG) on SiC(0001) are investigated by micro multi-point probes. Using a probe with 12 contacts, we perform four-point probe measurements with the possibility to effectively vary the contact spacing over more than one order of magnitude, allowing us to establish that the transport is purely two-dimensional. Combined with the carrier density obtained by angle-resolved photoemission spectroscopy, we find the room temperature mobility of MLG to be (870+-120)cm2/Vs. The transport in QFBLG is also found to be two-dimensional with a mobility of (1600+-160) cm2/Vs.
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Submitted 2 November, 2012;
originally announced November 2012.
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Electron-phonon coupling in quasi free-standing graphene
Authors:
Jens Christian Johannsen,
Søren Ulstrup,
Marco Bianchi,
Richard Hatch,
Dandan Guan,
Federico Mazzola,
Liv Hornekær,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Philip Hofmann
Abstract:
Quasi free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene is indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investig…
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Quasi free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene is indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investigate the electron-phonon coupling in two different types of quasi free-standing monolayer graphene: decoupled from SiC via hydrogen intercalation and decoupled from Ir via oxygen intercalation. Both systems show a similar overall behaviour of the self-energy and a weak renormalization of the bands near the Fermi energy. The electron-phonon coupling is found to be sufficiently weak to make the precise determination of the coupling constant lambda through renormalization difficult. The estimated value of lambda is 0.05(3) for both systems.
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Submitted 5 October, 2012;
originally announced October 2012.
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Localized states influence spin transport in epitaxial graphene
Authors:
T. Maassen,
J. J. van den Berg,
E. H. Huisman,
H. Dijkstra,
F. Fromm,
T. Seyller,
B. J. van Wees
Abstract:
We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001) (MLEG). Combined with newly performed measurements on quasi-free-standing…
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We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001) (MLEG). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements in MLEG and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.
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Submitted 15 August, 2012;
originally announced August 2012.
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Classical to quantum crossover of the cyclotron resonance in graphene: A study of the strength of intraband absorption
Authors:
M. Orlita,
I. Crassee,
C. Faugeras,
A. B. Kuzmenko,
F. Fromm,
M. Ostler,
Th. Seyller,
G. Martinez,
M. Polini,
M. Potemski
Abstract:
We report on absolute magneto-transmission experiments on highly-doped quasi-free-standing epitaxial graphene targeting the classical-to-quantum crossover of the cyclotron resonance. This study allows us to directly extract the carrier density and also other relevant quantities such as the quasiparticle velocity and the Drude weight, which is precisely measured from the strength of the cyclotron r…
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We report on absolute magneto-transmission experiments on highly-doped quasi-free-standing epitaxial graphene targeting the classical-to-quantum crossover of the cyclotron resonance. This study allows us to directly extract the carrier density and also other relevant quantities such as the quasiparticle velocity and the Drude weight, which is precisely measured from the strength of the cyclotron resonance. We find that the Drude weight is renormalized with respect to its non-interacting (or random-phase-approximation) value and that the renormalization is tied to the quasiparticle velocity enhancement. This finding is in agreement with recent theoretical predictions, which attribute the renormalization of the Drude weight in graphene to the interplay between broken Galilean invariance and electron-electron interactions.
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Submitted 10 September, 2012; v1 submitted 5 May, 2012;
originally announced May 2012.
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Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)
Authors:
T. Maassen,
J. J. van den Berg,
N. IJbema,
F. Fromm,
T. Seyller,
R. Yakimova,
B. J. van Wees
Abstract:
We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probab…
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We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question.
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Submitted 14 February, 2012;
originally announced February 2012.
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Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide
Authors:
Daniel Waldmann,
Johannes Jobst,
Felix Fromm,
Florian Speck,
Thomas Seyller,
Michael Krieger,
Heiko B. Weber
Abstract:
We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard…
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We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic temperature operation. Depending on implantation dose and temperature we operate in two gating regimes. In the first, the gating mechanism is similar to a MOSFET, the second is based on a tuned space charge region of the silicon carbide semiconductor. We present a detailed model that describes the two gating regimes and the transition in between.
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Submitted 27 September, 2011;
originally announced September 2011.
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The quasi-free-standing nature of graphene on H-saturated SiC(0001)
Authors:
F. Speck,
J. Jobst,
F. Fromm,
M. Ostler,
D. Waldmann,
M. Hundhausen,
H. B. Weber,
Th. Seyller
Abstract:
We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The laye…
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We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p = 5.0-6.5 x 10^12 cm^(-2)) with a carrier mobility of 3,100 cm^2/Vs at room temperature. Compared to graphene on the buffer layer a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001)which justifies the term "quasi-free-standing".
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Submitted 5 September, 2011; v1 submitted 21 March, 2011;
originally announced March 2011.
