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Structural and Nanochemical Properties of AlOx Layers in $Al/AlO_x/Al$-Layer Systems for Josephson Junctions
Authors:
S. Fritz,
L. Radtke,
R. Schneider,
M. Luysberg,
M. Weides,
D. Gerthsen
Abstract:
The structural and nanochemical properties of thin $AlO_x$ layers are decisive for the performance of advanced electronic devices. For example, they are frequently used as tunnel barriers in Josephson junction-based superconducting devices. However, systematic studies of the influence of oxidation parameters on structural and nanochemical properties are rare up to now, as most studies focus on the…
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The structural and nanochemical properties of thin $AlO_x$ layers are decisive for the performance of advanced electronic devices. For example, they are frequently used as tunnel barriers in Josephson junction-based superconducting devices. However, systematic studies of the influence of oxidation parameters on structural and nanochemical properties are rare up to now, as most studies focus on the electrical properties of $AlO_x$ layers. This study aims to close this gap by applying transmission electron microscopy in combination with electron energy loss spectroscopy to analyze the structural and nanochemical properties of differently fabricated $AlO_x$ layers and correlate them with fabrication parameters. With respect to the application of $AlO_x$ as tunnel barrier in superconducting Josephson junctions, $Al/AlO_x/Al$-layer systems were deposited on Si substrates. We will show that the oxygen content and structure of amorphous $AlO_x$ layers is strongly dependent on the fabrication process and oxidation parameters. Dynamic and static oxidation of Al yields oxygen-deficient amorphous $AlO_x$ layers, where the oxygen content ranges from x = 0.5 to x = 1.3 depending on oxygen pressure and substrate temperature. Thicker layers of stoichiometric crystalline $γ-Al_2O_3$ layers were grown by electron-beam evaporation of $Al_2O_3$ and reactive sputter deposition.
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Submitted 28 October, 2019;
originally announced October 2019.
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Optimization of $Al/AlO_x/Al$-Layer Systems for Josephson Junctions from a Microstructure Point of View
Authors:
S. Fritz,
L. Radtke,
R. Schneider,
M. Weides,
D. Gerthsen
Abstract:
$Al/AlO_x/Al…
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$Al/AlO_x/Al$-layer systems are frequently used for Josephson junction-based superconducting devices. Although much work has been devoted to the optimization of the superconducting properties of these devices, systematic studies on influence of deposition conditions combined with structural analyses on the nanoscale are rare up to now. We have focused on the optimization of the structural properties of $Al/AlO_x/Al$-layer systems deposited on Si(111) substrates with a particular focus on the thickness homogeneity of the $AlO_x$-tunnel barrier. A standard high-vacuum electron-beam deposition system was used and the effect of substrate pretreatment, different Al-deposition temperatures and Al-deposition rates was studied. Transmission electron microscopy was applied to analyze the structural properties of the $Al/AlO_x/Al$-layer systems to determine the thickness homogeneity of the $AlO_x$ layer, grain size distribution in the Al layers, Al-grain boundary types and the morphology of the $Al/AlO_x$ interface. We show that the structural properties of the lower Al layer are decisive for the structural quality of the whole $Al/AlO_x/Al$-layer system. Optimum conditions yield an epitaxial Al(111) layer on a Si(111) substrate with an Al-layer thickness variation of only 1.6 nm over more than 10 $μm$ and large lateral grain sizes up to 1 $μm$. Thickness fluctuations of the $AlO_x$-tunnel barrier are minimized on such an Al layer which is essential for the homogeneity of the tunnel current. Systematic variation of the Al-deposition rate and deposition temperature allows to develop an understanding of the growth mechanisms.
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Submitted 8 March, 2019; v1 submitted 28 January, 2019;
originally announced January 2019.
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Correlating the nanostructure of Al-oxide with deposition conditions and dielectric contributions of two-level systems in perspective of superconducting quantum circuits
Authors:
S. Fritz,
A. Seiler,
L. Radtke,
R. Schneider,
M. Weides,
G. Weiß,
D. Gerthsen
Abstract:
This work is concerned with Al/Al-oxide(AlO$_{x}$)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits. The device performance is limited by noise, which has been to a large degree assigned to the presence and properties of two-level tunneling systems in the amorphous AlO$_{x}$ tunnel barrier. The study is focused on the correlation of the…
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This work is concerned with Al/Al-oxide(AlO$_{x}$)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits. The device performance is limited by noise, which has been to a large degree assigned to the presence and properties of two-level tunneling systems in the amorphous AlO$_{x}$ tunnel barrier. The study is focused on the correlation of the fabrication conditions, nanostructural and nanochemical properties and the occurrence of two-level tunneling systems with particular emphasis on the AlO$_{x}$-layer. Electron-beam evaporation with two different processes and sputter deposition were used for structure fabrication, and the effect of illumination by ultraviolet light during Al-oxide formation is elucidated. Characterization was performed by analytical transmission electron microscopy and low-temperature dielectric measurements. We show that the fabrication conditions have a strong impact on the nanostructural and nanochemical properties of the layer systems and the properties of two-level tunneling systems. Based on the understanding of the observed structural characteristics, routes are derived towards the fabrication of Al/AlO$_{x}$/Al-layers systems with improved properties.
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Submitted 5 December, 2017;
originally announced December 2017.
