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Emergence of Nearly Flat Bands through an Embedded Kagome Lattice in an Epitaxial Two-dimensional Ge Layer on ZrB2(0001)
Authors:
Antoine Fleurence,
Chi-Cheng Lee,
Rainer Friedlein,
Yuki Fukaya,
Shinya Yoshimoto,
Kozo Mukai,
Hiroyuki Yamane,
Nobuhiro Kosugi,
Jun Yoshinobu,
Taisuke Ozaki,
Yukiko Yamada-Takamura
Abstract:
Ge atoms segregating on zirconium diboride thin films grown on Ge(111) were found to crystallize into a two-dimensional bitriangular structure which was recently predicted to be a flat band material. Angle-resolved photoemission experiments together with theoretical calculations verified the existence of a nearly flat band in spite of non-negligible in-plane long-range hopping and interactions wit…
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Ge atoms segregating on zirconium diboride thin films grown on Ge(111) were found to crystallize into a two-dimensional bitriangular structure which was recently predicted to be a flat band material. Angle-resolved photoemission experiments together with theoretical calculations verified the existence of a nearly flat band in spite of non-negligible in-plane long-range hopping and interactions with the substrate. This provides the first experimental evidence that a flat band can emerge from the electronic coupling between atoms and not from the geometry of the atomic structure.
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Submitted 1 May, 2020;
originally announced May 2020.
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Single-particle excitation of core states in epitaxial silicene
Authors:
Chi-Cheng Lee,
Jun Yoshinobu,
Kozo Mukai,
Shinya Yoshimoto,
Hiroaki Ueda,
Rainer Friedlein,
Antoine Fleurence,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
Recent studies of core-level X-ray photoelectron spectroscopy (XPS) spectra of silicene on ZrB$_2$(0001) were found to be inconsistent with the density of states (DOS) of a planar-like structure that has been proposed as the ground state by density functional theory (DFT). To resolve the discrepancy, a reexamination of the XPS spectra and direct theoretical access of accurate single-particle excit…
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Recent studies of core-level X-ray photoelectron spectroscopy (XPS) spectra of silicene on ZrB$_2$(0001) were found to be inconsistent with the density of states (DOS) of a planar-like structure that has been proposed as the ground state by density functional theory (DFT). To resolve the discrepancy, a reexamination of the XPS spectra and direct theoretical access of accurate single-particle excitation energies are desired. By analyzing the XPS data using symmetric Voigt functions, different binding energies and its sequence of Si $2p$ orbitals can be assigned from previously reported ones where asymmetric pseudo-Voigt functions are adopted. Theoretically, we have adopted an approach developed very recently, which follows the sophisticated $Δ$ self-consistent field ($Δ$SCF) methods, to study the single-particle excitation of core states. In the calculations, each single-particle energy and the renormalized core-hole charge density are calculated straightforwardly via two SCF calculations. By comparing the results, the theoretical core-level absolute binding energies including the splitting due to spin-orbit coupling are in good agreement with the observed high-resolution XPS spectra. The good agreement not only resolves the puzzling discrepancy between experiment and theory (DOS) but also advocates the success of DFT in describing many-body interactions of electrons at the surface.
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Submitted 3 March, 2017; v1 submitted 10 October, 2016;
originally announced October 2016.
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Avoiding critical-point phonon instabilities in two-dimensional materials: The origin of the stripe formation in epitaxial silicene
Authors:
Chi-Cheng Lee,
Antoine Fleurence,
Rainer Friedlein,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
The origin of the large-scale stripe pattern of epitaxial silicene on the ZrB$_2$(0001) surface observed by scanning tunneling microscope experiments is revealed by first-principles calculations. Without stripes, the ($\sqrt{3}\times\sqrt{3}$)-reconstructed, one-atom-thick Si layer is found to exhibit a "zero-frequency" phonon instability at the $M$ point. In order to avoid a divergent response, t…
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The origin of the large-scale stripe pattern of epitaxial silicene on the ZrB$_2$(0001) surface observed by scanning tunneling microscope experiments is revealed by first-principles calculations. Without stripes, the ($\sqrt{3}\times\sqrt{3}$)-reconstructed, one-atom-thick Si layer is found to exhibit a "zero-frequency" phonon instability at the $M$ point. In order to avoid a divergent response, the relevant phonon mode triggers the spontaneous formation of a new phase with a particular stripe pattern offering a way to lower both the atomic surface density and the total energy of silicene on the particular substrate. The observed mechanism is a way for the system to handle epitaxial strain and may therefore be more common in two-dimensional epitaxial materials exhibiting a small lattice mismatch with the substrate.
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Submitted 11 August, 2014;
originally announced August 2014.
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Band structure of silicene on the zirconium diboride (0001) thin film surface - convergence of experiment and calculations in the one-Si-atom Brillouin zone
Authors:
Chi-Cheng Lee,
Antoine Fleurence,
Yukiko Yamada-Takamura,
Taisuke Ozaki,
Rainer Friedlein
Abstract:
So far, it represents a challenging task to reproduce angle-resolved photoelectron (ARPES) spectra of epitaxial silicene by first-principles calculations. Here, we report on the resolution of the previously controversial issue related to the structural configuration of silicene on the ZrB$_2$(0001) surface and its band structure. In particular, by representing the band structure in a large Brillou…
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So far, it represents a challenging task to reproduce angle-resolved photoelectron (ARPES) spectra of epitaxial silicene by first-principles calculations. Here, we report on the resolution of the previously controversial issue related to the structural configuration of silicene on the ZrB$_2$(0001) surface and its band structure. In particular, by representing the band structure in a large Brillouin zone associated with a single Si atom, it is found that the imaginary part of the one-particle Green's function follows the spectral weight observed in ARPES spectra. By additionally varying the in-plane lattice constant, the results of density functional theory calculations and ARPES data obtained in a wide energy range converge into the "planar-like" phase and provide the orbital character of electronic states in the vicinity of the Fermi level. It is anticipated that the choice of a smaller commensurate unit cell for the representation of the electronic structure will be useful for the study of epitaxial two-dimensional materials on various substrates in general.
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Submitted 10 July, 2014;
originally announced July 2014.
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Diverse forms of $σ$ bonding in two-dimensional Si allotropes: Nematic orbitals in the $MoS_2$ structure
Authors:
Florian Gimbert,
Chi-Cheng Lee,
Rainer Friedlein,
Antoine Fleurence,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
The interplay of $sp^2$- and $sp^3$-type bonding defines silicon allotropes in two- and three-dimensional forms. A novel two-dimensional phase bearing structural resembleance to a single MoS$_2$ layer is found to possess a lower total energy than low-buckled silicene and to be stable in terms of its phonon dispersion relations. A new set of cigar-shaped, nematic orbitals originating from the Si…
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The interplay of $sp^2$- and $sp^3$-type bonding defines silicon allotropes in two- and three-dimensional forms. A novel two-dimensional phase bearing structural resembleance to a single MoS$_2$ layer is found to possess a lower total energy than low-buckled silicene and to be stable in terms of its phonon dispersion relations. A new set of cigar-shaped, nematic orbitals originating from the Si $sp^2$ orbitals realizes bonding with a 6-fold coordination of the inner Si atoms of the layer. The identification of these nematic orbitals advocates diverse Si bonding configurations different from those of C atoms.
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Submitted 31 December, 2013;
originally announced January 2014.
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First-principles study on competing phases of silicene: Effect of substrate and strain
Authors:
Chi-Cheng Lee,
Antoine Fleurence,
Rainer Friedlein,
Yukiko Yamada-Takamura,
Taisuke Ozaki
Abstract:
The stability and electronic structure of competing silicene phases under in-plane compressive stress, either free-standing or on the ZrB$_2$(0001) surface, has been studied by first-principles calculations. A particular ($\sqrt{3}\times\sqrt{3}$)-reconstructed structural modification was found to be stable on the ZrB$_2$(0001) surface under epitaxial conditions. In contrast to the planar and buck…
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The stability and electronic structure of competing silicene phases under in-plane compressive stress, either free-standing or on the ZrB$_2$(0001) surface, has been studied by first-principles calculations. A particular ($\sqrt{3}\times\sqrt{3}$)-reconstructed structural modification was found to be stable on the ZrB$_2$(0001) surface under epitaxial conditions. In contrast to the planar and buckled forms of free-standing silicene, in this "planar-like" phase, all but one of the Si atoms per hexagon reside in a single plane. While without substrate, for a wide range of strain, this phase is energetically less favorable than the buckled one, it is calculated to represent the ground state on the ZrB$_2$(0001) surface. The atomic positions are found to be determined by the interactions with the nearest neighbor Zr atoms competing with Si-Si bonding interactions provided by the constraint of the honeycomb lattice.
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Submitted 21 September, 2013; v1 submitted 3 July, 2013;
originally announced July 2013.
