-
Hot Electron Dynamics in Zincblende and Wurtzite GaN
Authors:
Clóves Gonçalves Rodrigues,
Valder N. Freire,
Áurea R. Vasconcellos,
Roberto Luzzi
Abstract:
A theoretical investigation of the excess energy dissipation of highly excited photoinjected electrons in both wurtzite and zincblende GaN is presented. The calculations are performed by solving numerically coupled quantum transport equations for the carriers and the acoustic, transversal and longitudinal optical phonon in order to derive the evolution of their nonequilibrium temperatures, dubbed…
▽ More
A theoretical investigation of the excess energy dissipation of highly excited photoinjected electrons in both wurtzite and zincblende GaN is presented. The calculations are performed by solving numerically coupled quantum transport equations for the carriers and the acoustic, transversal and longitudinal optical phonon in order to derive the evolution of their nonequilibrium temperatures, dubbed quasi-temperatures. It is shown that the electron energy dissipation is always faster in the wurtzite structure than in zincblende, both occurring in a subpicosecond time scale (< 0.2 ps).
△ Less
Submitted 2 October, 2021;
originally announced October 2021.
-
Mobility in N-Doped Wurtzite III-Nitrides
Authors:
Clóves Gonçalves Rodrigues,
Valder N. Freire,
Áurea R. Vasconcellos,
Roberto Luzzi
Abstract:
A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems, driven far away from equilibrium by a strong electric field, in the steady state, which follows after a very fast transient. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample) on the electric…
▽ More
A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems, driven far away from equilibrium by a strong electric field, in the steady state, which follows after a very fast transient. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample) on the electric field strength is derived, which decreases with the strength of electric field. We analyzed the contributions to the mobility arising out of the different channels of electron scattering, namely, the polar optic, deformation, piezoelectric, interactions with the phonons, and with impurities. The case of n-InN, n-GaN, and n-AlN have been analyzed: as expected the main contribution comes from the polar-optic interactions in these strongly polar semiconductors. The other interactions are in decreasing order, the deformation acoustic, the piezoelectric, and the one due to impurities.
△ Less
Submitted 2 October, 2021;
originally announced October 2021.
-
Band structure derived properties of HfO2 from first principles calculations
Authors:
Joelson Cott Garcia,
A. T. Lino,
L. M. R. Scolfaro,
J. R. Leite,
V. N. Freire,
G. A. Farias,
E. F. da Silva Jr
Abstract:
The electronic band structures and optical properties of cubic, tetragonal, and monoclinic phases of HfO2 are calculated using the first-principles linear augmented plane-wave method, within the density functional theory and generalized gradient approximation, and taking into account full-relativistic contributions. From the band structures, the electron- and hole-effective masses were obtained. R…
▽ More
The electronic band structures and optical properties of cubic, tetragonal, and monoclinic phases of HfO2 are calculated using the first-principles linear augmented plane-wave method, within the density functional theory and generalized gradient approximation, and taking into account full-relativistic contributions. From the band structures, the electron- and hole-effective masses were obtained. Relativistic effects play an important role, which is reflected in the effective masses values and in the detailed structure of the dielectric function. The calculated imaginary part of the dielectric function and refractive index are in good agreement with the data reported in the literature.
△ Less
Submitted 13 April, 2012;
originally announced April 2012.
-
Effective masses and complex dielectric function of cubic HfO2
Authors:
Joelson Cott Garcia,
L. M. R. Scolfaro,
J. R. Leite,
A. T. Lino,
V. N. Freire,
G. A. Farias,
E. F. da Silva Jr
Abstract:
The electronic band structure of cubic HfO2 is calculated using an it ab initio all-electron self--consistent linear augmented plane-wave method, within the framework of the local-density approximation and taking into account full-relativistic contributions. From the band structure, the carrier effective masses and the complex dielectric function are obtained. The Γ-isotropic heavy and light elect…
▽ More
The electronic band structure of cubic HfO2 is calculated using an it ab initio all-electron self--consistent linear augmented plane-wave method, within the framework of the local-density approximation and taking into account full-relativistic contributions. From the band structure, the carrier effective masses and the complex dielectric function are obtained. The Γ-isotropic heavy and light electron effective masses are shown to be several times heavier than the electron tunneling effective mass measured recently. The imaginary part of the complex dielectric function ε_2(ω) is in good agreement with experimental data from ultraviolet spectroscopic ellipsometry measurements in bulk yttria-stabilized HfO2 as well as with those performed in films deposited with the tetrakis diethylamido hafnium precursor for energies smaller than 9.5 eV.
△ Less
Submitted 13 April, 2012;
originally announced April 2012.
-
Structural, electronic, and optical properties of ZrO2 from ab initio calculations
Authors:
Joelson Cott Garcia,
L. M. R. Scolfaro,
A. T. Lino,
V. N. Freire,
G. A. Farias,
C. C. Silva,
H. W. Leite Alves,
S. C. P. Rodrigues,
E. F. da Silva Jr
Abstract:
Structural, electronic, and optical properties for the cubic, tetragonal, and monoclinic crystalline phases of ZrO2, as derived from it ab initio full-relativistic calculations, are presented. The electronic structure calculations were carried out by means of the all-electron full potential linear augmented plane wave method, within the framework of the density functional theory and the local dens…
▽ More
Structural, electronic, and optical properties for the cubic, tetragonal, and monoclinic crystalline phases of ZrO2, as derived from it ab initio full-relativistic calculations, are presented. The electronic structure calculations were carried out by means of the all-electron full potential linear augmented plane wave method, within the framework of the density functional theory and the local density approximation. The calculated carrier effective masses are shown to be highly anisotropic. The results obtained for the real and imaginary parts of the dielectric function, the reflectivity, and the refraction index, show good agreement with the available experimental results. In order to obtain the static dielectric constant of ZrO2, we added to the electronic part, the optical phonons contribution, which leads to values of e1(0)~29.5, 26.2, 21.9, respectively along the xx, yy, and zz directions, for the monoclinic phase, in excellent accordance with experiment. Relativistic effects, including the spin-orbit interaction, are demonstrated to be important for a better evaluation of the effective mass values, and in the detailed structure of the frequency dependent complex dielectric function.
△ Less
Submitted 13 April, 2012;
originally announced April 2012.
-
Defects in Graphene-Based Twisted Nanoribbons: Structural, Electronic and Optical Properties
Authors:
Ewerton W. S. Caetano,
Valder N. Freire,
Sergio G. dos Santos,
Eudenilson L. de Albuquerque,
Douglas S. Galvao,
Fernando Sato
Abstract:
We present some computational simulations of graphene-based nanoribbons with a number of half-twists varying from 0 to 4 and two types of defects obtained by removing a single carbon atom from two different sites. Optimized geometries are found by using a mix of classical-quantum semiempirical computations. According with the simulations results, the local curvature of the nanoribbons increases…
▽ More
We present some computational simulations of graphene-based nanoribbons with a number of half-twists varying from 0 to 4 and two types of defects obtained by removing a single carbon atom from two different sites. Optimized geometries are found by using a mix of classical-quantum semiempirical computations. According with the simulations results, the local curvature of the nanoribbons increases at the defect sites, specially for a higher number of half-twists. The HOMO-LUMO energy gap of the nanostructures has significant variation when the number of half-twists increases for the defective nanoribbons. At the quantum semiempirical level, the first optically active transitions and oscillator strengths are calculated using the full configuration interaction (CI) framework, and the optical absorption in the UV/Visible range (electronic transitions) and in the infrared (vibrational transitions) are achieved. Distinct nanoribbons show unique spectral signatures in the UV/Visible range, with the first absorption peaks in wavelengths ranging from the orange to the violet. Strong absorption is observed in the ultraviolet region, although differences in their infrared spectra are hardly discernible.
△ Less
Submitted 12 March, 2009;
originally announced March 2009.
-
Möbius and twisted graphene nanoribbons: stability, geometry and electronic properties
Authors:
Ewerton W. S. Caetano,
Valder N. Freire,
Sergio G. dos Santos,
Douglas S. Galvao,
Fernando Sato
Abstract:
Results of classical force field geometry optimizations for twisted graphene nanoribbons with a number of twists $N_t$ varying from 0 to 7 (the case $N_t$=1 corresponds to a half-twist Möbius nanoribbon) are presented in this work. Their structural stability was investigated using the Brenner reactive force field. The best classical molecular geometries were used as input for semiempirical calcu…
▽ More
Results of classical force field geometry optimizations for twisted graphene nanoribbons with a number of twists $N_t$ varying from 0 to 7 (the case $N_t$=1 corresponds to a half-twist Möbius nanoribbon) are presented in this work. Their structural stability was investigated using the Brenner reactive force field. The best classical molecular geometries were used as input for semiempirical calculations, from which the electronic properties (energy levels, HOMO, LUMO orbitals) were computed for each structure. CI wavefunctions were also calculated in the complete active space framework taking into account eigenstates from HOMO-4 to LUMO+4, as well as the oscillator strengths corresponding to the first optical transitions in the UV-VIS range. The lowest energy molecules were found less symmetric than initial configurations, and the HOMO-LUMO energy gaps are larger than the value found for the nanographene used to build them due to electronic localization effects created by the twisting. A high number of twists leads to a sharp increase of the HOMO $\to$ LUMO transition energy. We suggest that some twisted nanoribbons could form crystals stabilized by dipolar interactions.
△ Less
Submitted 11 March, 2009;
originally announced March 2009.
-
An Improved Description of the Dielectric Breakdown in Oxides Based on a Generalized Weibull distribution
Authors:
U. M. S. Costa,
V. N. Freire,
L. C. Malacarne,
R. S. Mendes,
S. Picoli, Jr.,
E. A. de Vasconcelos,
E. F. da Silva, Jr
Abstract:
In this work, we address modal parameter fluctuations in statistical distributions describing charge-to-breakdown $(Q_{BD})$ and/or time-to-breakdown $(t_{BD})$ during the dielectric breakdown regime of ultra-thin oxides, which are of high interest for the advancement of electronic technology. We reobtain a generalized Weibull distribution ($q$-Weibull), which properly describes $(t_{BD})$ data…
▽ More
In this work, we address modal parameter fluctuations in statistical distributions describing charge-to-breakdown $(Q_{BD})$ and/or time-to-breakdown $(t_{BD})$ during the dielectric breakdown regime of ultra-thin oxides, which are of high interest for the advancement of electronic technology. We reobtain a generalized Weibull distribution ($q$-Weibull), which properly describes $(t_{BD})$ data when oxide thickness fluctuations are present, in order to improve reliability assessment of ultra-thin oxides by time-to-breakdown $(t_{BD})$ extrapolation and area scaling. The incorporation of fluctuations allows a physical interpretation of the $q$-Weibull distribution in connection with the Tsallis statistics. In support to our results, we analyze $t_{BD}$ data of SiO$_2$-based MOS devices obtained experimentally and theoretically through a percolation model, demonstrating an advantageous description of the dielectric breakdown by the $q$-Weibull distribution.
△ Less
Submitted 22 February, 2006;
originally announced February 2006.
-
Exciton trapping in magnetic wire structures
Authors:
J. A. K. Freire,
F. M. Peeters,
V. N. Freire,
G. A. Farias
Abstract:
The lateral magnetic confinement of quasi two-dimensional excitons into wire like structures is studied. Spin effects are take into account and two different magnetic field profiles are considered, which experimentally can be created by the deposition of a ferromagnetic stripe on a semiconductor quantum well with magnetization parallel or perpendicular to the grown direction of the well. We find…
▽ More
The lateral magnetic confinement of quasi two-dimensional excitons into wire like structures is studied. Spin effects are take into account and two different magnetic field profiles are considered, which experimentally can be created by the deposition of a ferromagnetic stripe on a semiconductor quantum well with magnetization parallel or perpendicular to the grown direction of the well. We find that it is possible to confine excitons into one-dimensional (1D) traps. We show that the dependence of the confinement energy on the exciton wave vector, which is related to its free direction of motion along the wire direction, is very small. Through the application of a background magnetic field it is possible to move the position of the trapping region towards the edge of the ferromagnetic stripe or even underneath the stripe. The exact position of this 1D exciton channel depends on the strength of the background magnetic field and on the magnetic polarisation direction of the ferromagnetic film.
△ Less
Submitted 16 March, 2001;
originally announced March 2001.
-
Fine structure of excitons in a quantum well in the presence of a nonhomogeneous magnetic field
Authors:
J. A. K. Freire,
F. M. Peeters,
A. Matulis,
V. N. Freire,
G. A. Farias
Abstract:
The trapping of excitons in a semiconductor quantum well due to a circular symmetric nonhomogeneous magnetic field is studied. The effect of the spin state of the exciton on its trapping energy is analyzed, and the importance of the interaction of the orbital and spin Zeeman effect as compared to the diamagnetic term in the exciton Hamiltonian is emphasized. Magnetic field profiles are considere…
▽ More
The trapping of excitons in a semiconductor quantum well due to a circular symmetric nonhomogeneous magnetic field is studied. The effect of the spin state of the exciton on its trapping energy is analyzed, and the importance of the interaction of the orbital and spin Zeeman effect as compared to the diamagnetic term in the exciton Hamiltonian is emphasized. Magnetic field profiles are considered, which can experimentally be created through the deposition of ferromagnetic disks on top of a semiconductor heterostructure. This setup gives rise to a magnetic dipole type of profile in the $xy$ plane of the exciton motion. We find that the spin direction of the exciton influences its localization by changing the confinement region in the effective potential. The exciton confinement increases with magnetic field intensity, and this is more pronounced when the exciton g-factor is different from zero. The numerical calculations are performed for GaAs/Al$_{x}$Ga$_{1-x}$As quantum wells and we show that it open up a new realistic path for experiments designed to probe exciton trapping in semiconductors.
△ Less
Submitted 14 June, 2000; v1 submitted 6 June, 2000;
originally announced June 2000.
-
Confinement of two-dimensional excitons in a non-homogeneous magnetic field
Authors:
J. A. K. Freire,
A. Matulis,
F. M. Peeters,
V. N. Freire,
G. A. Farias
Abstract:
The effective Hamiltonian describing the motion of an exciton in an external non-homogeneous magnetic field is derived. The magnetic field plays the role of an effective potential for the exciton motion, results into an increment of the exciton mass and modifies the exciton kinetic energy operator. In contrast to the homogeneous field case, the exciton in a non-homogeneous magnetic field can als…
▽ More
The effective Hamiltonian describing the motion of an exciton in an external non-homogeneous magnetic field is derived. The magnetic field plays the role of an effective potential for the exciton motion, results into an increment of the exciton mass and modifies the exciton kinetic energy operator. In contrast to the homogeneous field case, the exciton in a non-homogeneous magnetic field can also be trapped in the low field region and the field gradient increases the exciton confinement. The trapping energy and wave function of the exciton in a GaAs two-dimensional electron gas for specific circular magnetic field configurations are calculated. The results show than excitons can be trapped by non-homogeneous magnetic fields, and that the trapping energy is strongly correlated with the shape and strength of the non-homogeneous magnetic field profile.
△ Less
Submitted 25 February, 2000; v1 submitted 22 October, 1999;
originally announced October 1999.
