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Electrical control of nonlinear quantum optics in a nano-photonic waveguide
Authors:
D. Hallett,
A. P. Foster,
D. L. Hurst,
B. Royall,
P. Kok,
E. Clarke,
I. E. Itskevich,
A. M. Fox,
M. S. Skolnick,
L. R. Wilson
Abstract:
Local control of the generation and interaction of indistinguishable single photons is a key requirement for photonic quantum networks. Waveguide-based architectures, in which embedded quantum emitters act as both highly coherent single photon sources and as nonlinear elements to mediate photon-photon interactions, offer a scalable route to such networks. However, local electrical control of a qua…
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Local control of the generation and interaction of indistinguishable single photons is a key requirement for photonic quantum networks. Waveguide-based architectures, in which embedded quantum emitters act as both highly coherent single photon sources and as nonlinear elements to mediate photon-photon interactions, offer a scalable route to such networks. However, local electrical control of a quantum optical nonlinearity has yet to be demonstrated in a waveguide geometry. Here, we demonstrate local electrical tuning and switching of single photon generation and nonlinear interaction by embedding a quantum dot in a nano-photonic waveguide with enhanced light-matter interaction. A power-dependent transmission extinction as large as 40$\pm$2% and clear, voltage-controlled bunching in the photon statistics of the transmitted light demonstrate the single photon character of the nonlinearity. The deterministic nature of the nonlinearity is particularly attractive for the future realization of photonic gates for scalable nano-photonic waveguide-based quantum information processing.
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Submitted 28 November, 2017; v1 submitted 2 November, 2017;
originally announced November 2017.
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Electro-mechanical control of an on-chip optical beam splitter containing an embedded quantum emitter
Authors:
Z. K. Bishop,
A. P. Foster,
B. Royall,
C. Bentham,
E. Clarke,
M. S. Skolnick,
L. R. Wilson
Abstract:
We demonstrate electro-mechanical control of an on-chip GaAs optical beam splitter containing a quantum dot single-photon source. The beam splitter consists of two nanobeam waveguides, which form a directional coupler (DC). The splitting ratio of the DC is controlled by varying the out-of-plane separation of the two waveguides using electro-mechanical actuation. We reversibly tune the beam splitte…
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We demonstrate electro-mechanical control of an on-chip GaAs optical beam splitter containing a quantum dot single-photon source. The beam splitter consists of two nanobeam waveguides, which form a directional coupler (DC). The splitting ratio of the DC is controlled by varying the out-of-plane separation of the two waveguides using electro-mechanical actuation. We reversibly tune the beam splitter between an initial state, with emission into both output arms, and a final state with photons emitted into a single output arm. The device represents a compact and scalable tuning approach for use in III-V semiconductor integrated quantum optical circuits.
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Submitted 2 May, 2018; v1 submitted 18 September, 2017;
originally announced September 2017.
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Electrically pumped single-defect light emitters in WSe$_2$
Authors:
S. Schwarz,
A. Kozikov,
F. Withers,
J. K. Maguire,
A. P. Foster,
S. Dufferwiel,
L. Hague,
M. N. Makhonin,
L. R. Wilson,
A . K. Geim,
K. S. Novoselov,
A. I. Tartakovskii
Abstract:
Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects…
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Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects in WSe$_2$ under both optical and electrical excitation. This paves the way towards the realization of electrically-pumped quantum emitters in atomically thin semiconductors. In addition we demonstrate tuning by more than 1 meV of the emission energy of the defect luminescence by applying a vertical electric field. This provides an estimate of the permanent electric dipole created by the corresponding electron-hole pair. The light-emitting devices investigated in our work can be assembled on a variety of substrates enabling a route to integration of electrically pumped single quantum emitters with existing technologies in nano-photonics and optoelectronics.
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Submitted 6 May, 2016;
originally announced May 2016.
