Showing 1–5 of 5 results for author: Fortmann, J D

Implementation and performance of a fiber-coupled CMOS camera in an ultrafast reflective high-energy electron diffraction experiment

Authors: Jonas D. Fortmann, Alexander Kaßen, Christian Brand, Thomas Duden, Michael Horn-von Hoegen

Abstract: The implementation of a monolithic fiber-optically coupled CMOS-based TemCam-XF416 camera into our ultra-high vacuum (UHV) ultrafast reflection high-energy electron diffraction setup is reported. A combination of a pumpable gate valve and a self-built cooling collar allows UHV conditions to be reached without the need to remove the heat-sensitive device. The water-cooled collar is mounted to the c… ▽ More The implementation of a monolithic fiber-optically coupled CMOS-based TemCam-XF416 camera into our ultra-high vacuum (UHV) ultrafast reflection high-energy electron diffraction setup is reported. A combination of a pumpable gate valve and a self-built cooling collar allows UHV conditions to be reached without the need to remove the heat-sensitive device. The water-cooled collar is mounted to the camera housing and prevents heating of the detector upon bake-out of the UHV chamber. The TemCam provides an one order of magnitude higher spatial resolution than the previously used microchannel plate (MCP) based detector (Burle Chevron 3040FM) which enables a 30% higher resolution in reciprocal space. The low background intensity and the 4$\times$ lager dynamic range enables analysis of the diffuse intensity of the diffraction pattern like Kikuchi lines and bands. A key advantage over the previous MCP detector is the complete absence of the blooming effect, which enables the quantitative spot profile analysis of the diffraction spots. The inherent light sensitivity in an optical pump experiment can be overcome by using photons with hν < 1.12 eV, i.e., the indirect band gap of silicon, or by shielding any stray light. △ Less

Submitted 19 November, 2024; originally announced November 2024.

Comments: 7 pages, 6 figures. arXiv admin note: text overlap with arXiv:2311.10010

Cool Cooling Collar for Bake-Out of Temperature-Sensitive Devices

Authors: Jonas D. Fortmann, Christian Brand, Michael Horn-von Hoegen

Abstract: A combination of a pumpable gate valve and a self-built cooling collar permits bake-out of an ultra-high vacuum chamber without having to dismount sensitive equipment. A small pump port on the closed gate valve maintains ultra-high vacuum conditions for a TVIPS TemCam-XF416 imaging electron detector in the case of venting the main chamber. The water-cooled collar mounted to the detector housing pr… ▽ More A combination of a pumpable gate valve and a self-built cooling collar permits bake-out of an ultra-high vacuum chamber without having to dismount sensitive equipment. A small pump port on the closed gate valve maintains ultra-high vacuum conditions for a TVIPS TemCam-XF416 imaging electron detector in the case of venting the main chamber. The water-cooled collar mounted to the detector housing prevents heating of the detector upon bake-out of the ultra-high vacuum chamber. △ Less

Submitted 22 November, 2023; v1 submitted 16 November, 2023; originally announced November 2023.

Comments: 3 pages, 2 figures

Non-Equilibrium Pathways for Excitation of Bulk and Surface Phonons through Anharmonic Coupling

Authors: C. Brand, V. Tinnemann, A. Hanisch-Blicharski, M. Tajik, J. D. Fortmann, A. Kaßen, F. Thiemann, M. Horn-von Hoegen

Abstract: Upon impulsive optical excitation of solid-state materials, the non-equilibrium flow of energy from the excited electronic system to the lattice degrees of freedom typically happens in a few picoseconds. Here we identified the surface of thin Bi films grown on Si(001) as an additional subsystem which is excited much slower on a 100 ps timescale that is caused by decoupling due to mismatched phonon… ▽ More Upon impulsive optical excitation of solid-state materials, the non-equilibrium flow of energy from the excited electronic system to the lattice degrees of freedom typically happens in a few picoseconds. Here we identified the surface of thin Bi films grown on Si(001) as an additional subsystem which is excited much slower on a 100 ps timescale that is caused by decoupling due to mismatched phonon dispersions relations of bulk and surface. Anharmonic coupling among the phonon systems provides pathways for excitations which exhibits a 1/T-dependence causing a speed-up of surface excitation at higher temperatures. A quantitative justification is provided by phonon Umklapp processes from lattice thermal conductivity of the Bi bulk. Three-temperature model simulations reveal a pronounced non-equilibrium situation up to nanoseconds: initially, the surface is colder than the bulk, that situation is then inverted during cooling and the surface feeds energy back into the bulk phonon system. △ Less

Submitted 7 March, 2024; v1 submitted 24 October, 2023; originally announced October 2023.

Critical behavior of the dimerized Si(001) surface: Continuous order-disorder phase transition in the two-dimensional Ising universality class

Authors: Christian Brand, Alfred Hucht, Hamid Mehdipour, Giriraj Jnawali, Jonas D. Fortmann, Mohammad Tajik, Rüdiger Hild, Björn Sothmann, Peter Kratzer, Ralf Schützhold, Michael Horn-von Hoegen

Abstract: The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling c… ▽ More The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling constants of an effective lattice Hamiltonian describing the dimer interactions. Experimentally, the phase transition from the low-temperature $c(4 {\times} 2)$- to the high-temperature $p(2 {\times} 1)$-reconstructed surface is followed through the intensity and width of the superstructure spots within the temperature range 78-400 K. Near the critical temperature $T_c = 190.6\,\mathrm{K}$, we observe universal critical behavior of spot intensities and correlation lengths which falls into the universality class of the two-dimensional (2D) Ising model. From the ratio of correlation lengths along and across the dimer rows we determine effective nearest-neighbor couplings of an anisotropic 2D Ising model, $J_\parallel = (-24.9 \pm 0.9_\mathrm{stat} \pm 1.3_\mathrm{sys})\,\mathrm{meV}$ and $J_\perp = (-0.8 \pm 0.1_\mathrm{stat})\,\mathrm{meV}$. We find that the experimentally determined coupling constants of the Ising model can be reconciled with those of the more complex lattice Hamiltonian from DFT when the critical behavior is of primary interest. The anisotropy of the interactions derived from the experimental data via the 2D Ising model is best matched by DFT calculations using the PBEsol functional. The trends in the calculated anisotropy are consistent with the surface stress anisotropy predicted by the DFT functionals, pointing towards the role of surface stress reduction as a driving force for establishing the $c(4 {\times} 2)$-reconstructed ground state. △ Less

Submitted 6 March, 2024; v1 submitted 16 October, 2023; originally announced October 2023.

Journal ref: Phys. Rev. B 109, 134104 (2024)

Dimer Coupling Energies of the Si(001) Surface

Authors: Christian Brand, Alfred Hucht, Giriraj Jnawali, Jonas D. Fortmann, Björn Sothmann, Hamid Mehdipour, Peter Kratzer, Ralf Schützhold, Michael Horn-von Hoegen

Abstract: The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as a function of temperature were analyzed within the framework of the anisotropic two-dimensional Ising model. The validity of this approach is justifie… ▽ More The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as a function of temperature were analyzed within the framework of the anisotropic two-dimensional Ising model. The validity of this approach is justified by the large ratio of correlation lengths, $ξ_\parallel^+/ξ_\perp^+ = 5.2$ of the fluctuating $c(4 {\times} 2)$ domains above the critical temperature $T_\mathrm{c} = (190.6 \pm 10)$ K. We obtain effective couplings $J_\parallel = (-24.9 \pm 1.3)$ meV along the dimer rows and $J_\perp = (-0.8 \pm 0.1)$ meV across the dimer rows, i.e., antiferromagnetic-like coupling of the dimers with $c(4 {\times} 2)$ symmetry. △ Less

Submitted 3 February, 2023; originally announced February 2023.

Comments: Accepted for publication at Physical Review Letters on 02Feb23

Journal ref: Phys. Rev. Lett. 130, 126203 (2023)