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A simple recipe to create three-dimensional reciprocal space maps
Authors:
Rafaela F. S. Penacchio,
Maurício B. Estradiote,
Sérgio L. Morelhão,
Celso I. Fornari,
Philipp Kagerer,
Marco Dittmar,
Simon Müller,
Friedrich Reinert
Abstract:
Combinations of advanced X-ray sources and zero-noise detector of enormous dynamic range have significantly increased the opportunity of mapping the reciprocal space of crystal lattices. It is particularly important in the design of new devices based on epitaxial thin films. In this work, we present a simple approach to the three-dimensional geometry involved in plotting reciprocal space maps, alo…
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Combinations of advanced X-ray sources and zero-noise detector of enormous dynamic range have significantly increased the opportunity of mapping the reciprocal space of crystal lattices. It is particularly important in the design of new devices based on epitaxial thin films. In this work, we present a simple approach to the three-dimensional geometry involved in plotting reciprocal space maps, along with an example of computer codes to allow X-ray users to write their own codes. Experimental data used to illustrate an application of the codes are from antimony telluride epitaxial film on barium difluoride substrate.
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Submitted 11 October, 2022;
originally announced October 2022.
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Two-dimensional ferromagnetic extension of a topological insulator
Authors:
P. Kagerer,
C. I. Fornari,
S. Buchberger,
T. Tschirner,
L. Veyrat,
M. Kamp,
A. V. Tcakaev,
V. Zabolotnyy,
S. L. Morelhão,
B. Geldiyev,
S. Müller,
A. Fedorov,
E. Rienks,
P. Gargiani,
M. Valvidares,
L. C. Folkers,
A. Isaeva,
B. Büchner,
V. Hinkov,
R. Claessen,
H. Bentmann,
F. Reinert
Abstract:
Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a 3D topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface and not in the bulk, e.g. through proximity of a ferromagnetic (FM) layer. However, such a proximity-induced Dirac mass gap has not been observed, likely due to insufficien…
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Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a 3D topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface and not in the bulk, e.g. through proximity of a ferromagnetic (FM) layer. However, such a proximity-induced Dirac mass gap has not been observed, likely due to insufficient overlap of TSS and the FM subsystem. Here, we take a different approach, namely FM extension, using a thin film of the 3D TI Bi$_2$Te$_3$, interfaced with a monolayer of the lattice-matched van der Waals ferromagnet MnBi$_2$Te$_4$. Robust 2D ferromagnetism with out-of-plane anisotropy and a critical temperature of $\text{T}_\text{c}\approx$~15 K is demonstrated by X-ray magnetic dichroism and electrical transport measurements. Using angle-resolved photoelectron spectroscopy, we observe the opening of a sizable magnetic gap in the 2D FM phase, while the surface remains gapless in the paramagnetic phase above T$_c$. This sizable gap indicates a relocation of the TSS to the FM ordered Mn moments near the surface, which leads to a large mutual overlap.
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Submitted 28 July, 2022;
originally announced July 2022.
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Simulation of X-ray diffraction in Mn$_x$Bi$_2$Te$_{3+x}$ epitaxic films
Authors:
Rafaela F. S. Penacchio,
Celso I. Fornari,
Yori G. Camillo,
Philipp Kagerer,
Sebastian Buchberger,
Martin Kamp,
Hendrik Bentmann,
Friedrich Reinert,
Sergio L. Morelhao
Abstract:
Disordered heterostructures stand as a general description for compounds that are part of homologous series such as bismuth chalcogenides. In device engineering, van der Waals epitaxy of these compounds is very promising for applications in spintronic and quantum computing. Structural analysis methods are essential to control and improve their synthesis in the form of thin films. Recently, X-rays…
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Disordered heterostructures stand as a general description for compounds that are part of homologous series such as bismuth chalcogenides. In device engineering, van der Waals epitaxy of these compounds is very promising for applications in spintronic and quantum computing. Structural analysis methods are essential to control and improve their synthesis in the form of thin films. Recently, X-rays tools have been proposed for structural modeling of disordered heterostructures [arXiv:2107.12280]. Here, we further evaluate the use of these tools to study the compound Mn$_x$Bi$_2$Te$_{3+x}$ in the grazing incidence region of the reflectivity curves, as well as the effect of thickness fluctuation in the wide angle region.
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Submitted 4 September, 2021;
originally announced September 2021.
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X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator
Authors:
Rafaela F. S. Penacchio,
Celso I. Fornari,
Yori G. Camillo,
Philipp Kagerer,
Sebastian Buchberger,
Martin Kamp,
Hendrik Bentmann,
Friedrich Reinert,
Sergio L. Morelhao
Abstract:
Synthesis of new materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing, in particular topological insulators and, more recently, materials that allow the phenomenological exploration of the combination of non-trivial electronic band topology a…
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Synthesis of new materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing, in particular topological insulators and, more recently, materials that allow the phenomenological exploration of the combination of non-trivial electronic band topology and magnetism. Weak vdW forces between atomic layers give rise to composition fluctuations and structural disorder that are difficult to control even in a typical binary topological insulators such as Bi2Te3. The addition of a third element as in MnBi2Te4 makes the epitaxy of these materials even more chaotic. In this work, statistical model structures of thin films on single crystal substrates are described. It allows the simulation of X-ray diffraction in disordered heterostructures, a necessary step towards controlling the epitaxial growth of these materials. On top of this, the diffraction simulation method described here can be readily applied as a general tool in the field of design new materials based on stacking of vdW bonded layers of distint elements.
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Submitted 26 July, 2021;
originally announced July 2021.
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Incipient antiferromagnetism in the Eu-doped topological insulator Bi$_2$Te$_3$
Authors:
Abdul Tcakaev,
Volodymyr B. Zabolotnyy,
Celso I. Fornari,
Philipp Rüßmann,
Thiago R. F. Peixoto,
Fabian Stier,
Michael Dettbarn,
Philipp Kagerer,
Eugen Weschke,
Enrico Schierle,
Peter Bencok,
Paulo H. O. Rappl,
Eduardo Abramof,
Hendrik Bentmann,
Eberhard Goering,
Friedrich Reinert,
Vladimir Hinkov
Abstract:
Rare earth ions typically exhibit larger magnetic moments than transition metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Yet, in a recent photoemission study of Eu-doped Bi$_2$Te$_3$ films, the spectra remained gapless down to $T = 20\;\text{K}$. Here, we scrutinize whether the conditions for a substantial gap formation in thi…
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Rare earth ions typically exhibit larger magnetic moments than transition metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Yet, in a recent photoemission study of Eu-doped Bi$_2$Te$_3$ films, the spectra remained gapless down to $T = 20\;\text{K}$. Here, we scrutinize whether the conditions for a substantial gap formation in this system are present by combining spectroscopic and bulk characterization methods with theoretical calculations. For all studied Eu doping concentrations, our atomic multiplet analysis of the $M_{4,5}$ x-ray absorption and magnetic circular dichroism spectra reveals a Eu$^{2+}$ valence and confirms a large magnetic moment, consistent with a $4f^7 \; {^8}S_{7/2}$ ground state. At temperatures below $10\;\text{K}$, bulk magnetometry indicates the onset of antiferromagnetic (AFM) ordering. This is in good agreement with density functional theory, which predicts AFM interactions between the Eu impurities. Our results support the notion that antiferromagnetism can coexist with topological surface states in rare-earth doped Bi$_2$Te$_3$ and call for spectroscopic studies in the kelvin range to look for novel quantum phenomena such as the quantum anomalous Hall effect.
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Submitted 24 September, 2020;
originally announced September 2020.
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Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators
Authors:
Celso I. Fornari,
Eduardo Abramof,
Paulo H. O. Rappl,
Stefan W. Kycia,
Sérgio L. Morelhão
Abstract:
Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption coefficient of telluride compose a scenario where growth parameters have drastic effects on structural and electronic properties of the films. Recently [J. Phys.…
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Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption coefficient of telluride compose a scenario where growth parameters have drastic effects on structural and electronic properties of the films. Recently [J. Phys. Chem. C 2019, 123, 24818-24825], a detailed investigation has been performed on the dynamics of defects in epitaxial films of this material, revealing the impact of film/substrate lattice misfit on the films' lateral coherence. Very small lattice misfit (<0.05%) are expected to have no influence on quality of epitaxial system with atomic layers weakly bonded to each other by van der Waals forces, contrarily to what was observed. In this work, we investigate the correlation between lattice misfit and size and morphology of the film crystalline domains. Three-dimensional reciprocal-space maps of film Bragg reflections obtained with synchrotron X-rays are used to visualize the spatial conformation of the crystallographic domains through film thickness, while atomic force microscopy images provide direct information of the domains morphology at the film surface.
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Submitted 5 August, 2020;
originally announced August 2020.
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Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films
Authors:
Sergio L. Morelhao,
Stefan Kycia,
Samuel Netzke,
Celso I. Fornari,
Paulo H. O. Rappl,
Eduardo Abramof
Abstract:
Epitaxial films of bismuth telluride topological insulators have received increasing attention due to potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflectio…
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Epitaxial films of bismuth telluride topological insulators have received increasing attention due to potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflections in hexagonal bismuth telluride films on cubic substrates, in-plane lattice mismatches were characterized with accuracy at least 20 times better than using other X-ray diffraction methods, providing clear evidence of 0.007\% lateral lattice mismatch, consistent with stress relaxation associated with van der Waals gaps in the film structure.
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Submitted 29 July, 2020;
originally announced July 2020.
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Orbital Complexity in Intrinsic Magnetic Topological Insulators MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$
Authors:
R. C. Vidal,
H. Bentmann,
J. I. Facio,
T. Heider,
P. Kagerer,
C. I. Fornari,
T. R. F. Peixoto,
T. Figgemeier,
S. Jung,
C. Cacho,
B. Büchner,
J. van den Brink,
C. M. Schneider,
L. Plucinski,
E. F. Schwier,
K. Shimada,
M. Richter,
A. Isaeva,
F. Reinert
Abstract:
Using angle-resolved photoelectron spectroscopy (ARPES), we investigate the surface electronic structure of the magnetic van der Waals compounds MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$, the $n=$~1 and 2 members of a modular (Bi$_2$Te$_3$)$_n$(MnBi$_2$Te$_4$) series, which have attracted recent interest as intrinsic magnetic topological insulators. Combining circular dichroic, spin-resolved and photon…
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Using angle-resolved photoelectron spectroscopy (ARPES), we investigate the surface electronic structure of the magnetic van der Waals compounds MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$, the $n=$~1 and 2 members of a modular (Bi$_2$Te$_3$)$_n$(MnBi$_2$Te$_4$) series, which have attracted recent interest as intrinsic magnetic topological insulators. Combining circular dichroic, spin-resolved and photon-energy-dependent ARPES measurements with calculations based on density functional theory, we unveil complex momentum-dependent orbital and spin textures in the surface electronic structure and disentangle topological from trivial surface bands. We find that the Dirac-cone dispersion of the topologial surface state is strongly perturbed by hybridization with valence-band states for Bi$_2$Te$_3$-terminated surfaces but remains preserved for MnBi$_2$Te$_4$-terminated surfaces. Our results firmly establish the topologically non-trivial nature of these magnetic van der Waals materials and indicate that the possibility of realizing a quantized anomalous Hall conductivity depends on surface termination.
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Submitted 7 May, 2021; v1 submitted 15 July, 2020;
originally announced July 2020.
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Ubiquitous impact of localised impurity states on the exchange coupling mechanism in magnetic topological insulators
Authors:
Thiago R. F. Peixoto,
Hendrik Bentmann,
Philipp Rüßmann,
Abdul-Vakhab Tcakaev,
Martin Winnerlein,
Steffen Schreyeck,
Sonja Schatz,
Raphael Crespo Vidal,
Fabian Stier,
Volodymyr Zabolotnyy,
Robert J. Green,
Chul Hee Min,
Celso I. Fornari,
Henriette Maaß,
Hari Babu Vasili,
Pierluigi Gargiani,
Manuel Valvidares,
Alessandro Barla,
Jens Buck,
Moritz Hoesch,
Florian Diekmann,
Sebastian Rohlf,
Matthias Kalläne,
Kai Rossnagel,
Charles Gould
, et al. (5 additional authors not shown)
Abstract:
Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and mul…
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Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and multiplet ligand field theory, we determine the local electronic and magnetic configurations of V and Cr impurities in (Bi,Sb)$_2$Te$_3$. While strong pd hybridisation is found for both dopant types, their 3d densities of states show pronounced differences. State-of-the-art first-principles calculations show how these impurity states mediate characteristic short-range pd exchange interactions, whose strength sensitively varies with the position of the 3d states relative to the Fermi level. Measurements on films with varying host stoichiometry support this trend. Our results establish the essential role of impurity-state mediated exchange interactions in the magnetism of MTI.
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Submitted 15 January, 2020;
originally announced January 2020.
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Lateral lattice coherence lengths in thin films of bismuth telluride topological insulators, with overview on polarization factors for X-ray dynamical diffraction in monochromator crystals
Authors:
Sergio L. Morelhao,
Stefan Kycia,
Samuel Netzke,
Celso I. Fornari,
Paulo H. O. Rappl,
Eduardo Abramof
Abstract:
In the supporting information file for article Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators(J. Phys. Chem. C 2019, 123, 24818-24825, doi: 10.1021/acs.jpcc.9b05377), several topics on X-ray diffraction analysis of thin films were developed or revisited. A simple equation to determine lateral lattice coherence lengths in thin films stands as the main devel…
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In the supporting information file for article Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators(J. Phys. Chem. C 2019, 123, 24818-24825, doi: 10.1021/acs.jpcc.9b05377), several topics on X-ray diffraction analysis of thin films were developed or revisited. A simple equation to determine lateral lattice coherence lengths in thin films stands as the main development (section S4 - Lateral lattice coherence length in thin films), while X-ray dynamical diffraction simulation in monochromator crystals stands as an interesting overview on how the ratio between $π$ and $σ$ polarization components is affected by whether diffraction takes place under kinematical or dynamical regime (section S3 - Polarization factor).
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Submitted 1 November, 2019;
originally announced November 2019.
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Surface states and Rashba-type spin polarization in antiferromagnetic MnBi$_2$Te$_4$
Authors:
R. C. Vidal,
H. Bentmann,
T. R. F. Peixoto,
A. Zeugner,
S. Moser,
C. H. Min,
S. Schatz,
K. Kissner,
M. Ünzelmann,
C. I. Fornari,
H. B. Vasili,
M. Valvidares,
K. Sakamoto,
D. Mondal,
J. Fujii,
I. Vobornik,
S. Jung,
C. Cacho,
T. K. Kim,
R. J. Koch,
C. Jozwiak,
A. Bostwick,
J. D. Denlinger,
E. Rotenberg,
J. Buck
, et al. (10 additional authors not shown)
Abstract:
The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals…
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The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals by use of spin- and angle-resolved photoelectron spectroscopy experiments. In line with theoretical predictions, the results reveal a surface state in the bulk band gap and they provide evidence for the influence of exchange interaction and spin-orbit coupling on the surface electronic structure.
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Submitted 12 September, 2019; v1 submitted 28 March, 2019;
originally announced March 2019.
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X-ray tools for van der Waals epitaxy of bismuth telluride topological insulator films
Authors:
Stefan Kycia,
Sergio L. Morelhao,
Samuel Netzke,
Celso I. Fornari,
Paulo H. O. Rappl,
Eduardo Abramof
Abstract:
Potential applications in spintronics and quantum computing have motivated much recent research in epitaxial films of bismuth telluride. This system is also an example of van der Waals (vdW) epitaxy where the interface coherence between film and substrate is based on vdW bonds instead of strong ionic or covalent bonds. Effects of lattice mismatch on electrical properties and film structure are mor…
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Potential applications in spintronics and quantum computing have motivated much recent research in epitaxial films of bismuth telluride. This system is also an example of van der Waals (vdW) epitaxy where the interface coherence between film and substrate is based on vdW bonds instead of strong ionic or covalent bonds. Effects of lattice mismatch on electrical properties and film structure are more difficult to control due to the weakness of the vdW forces. Here we present a general x-ray diffraction method to investigate in-plane atomic displacements and lateral lattice coherence length in vdW epitaxy. The method is demonstrated in a series of films grown at different temperatures and pressures of additional tellurium sources, revealing strong intercorrelations between the lateral features as well as with the n/p-types of free charge carries.
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Submitted 27 December, 2018;
originally announced December 2018.
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Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$
Authors:
Alexander Zeugner,
Frederik Nietschke,
Anja U. B. Wolter,
Sebastian Gaß,
Raphael C. Vidal,
Thiago R. F. Peixoto,
Darius Pohl,
Christine Damm,
Axel Lubk,
Richard Hentrich,
Simon K. Moser,
Celso Fornari,
Chul Hee Min,
Sonja Schatz,
Katharina Kißner,
Maximilian Ünzelmann,
Martin Kaiser,
Francesco Scaravaggi,
Bernd Rellinghaus,
Kornelius Nielsch,
Christian Heß,
Bernd Büchner,
Friedrich Reinert,
Hendrik Bentmann,
Oliver Oeckler
, et al. (3 additional authors not shown)
Abstract:
Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and strengthen it as a promising experimental platform for studies of a crossover between magnetic ordering and non-trivial topology. High-quality single crystals of MnB…
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Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and strengthen it as a promising experimental platform for studies of a crossover between magnetic ordering and non-trivial topology. High-quality single crystals of MnBi$_{2}$Te$_{4}$ are grown by slow cooling within a narrow range between the melting points of Bi$_{2}$Te$_{3}$ (586 °C) and MnBi$_{2}$Te$_{4}$ (600 °C). Single crystal X-ray diffraction and electron microscopy reveal ubiquitous antisite defects in both cation sites and, possibly, Mn vacancies. Powders of MnBi$_{2}$Te$_{4}$ can be obtained at subsolidus temperatures, and a complementary thermochemical study establishes a limited high-temperature range of phase stability. Nevertheless, quenched powders are stable at room temperature and exhibit long-range antiferromagnetic ordering below 24 K. The expected Mn(II) out-of-plane magnetic state is confirmed by the magnetization, X-ray photoemission, X-ray absorption and linear dichroism data. MnBi$_{2}$Te$_{4}$ exhibits a metallic type of resistivity in the range 4.5-300 K. The compound is an n-type conductor that reaches a thermoelectric figure of merit up to ZT = 0.17. Angle-resolved photoemission experiments provide evidence for a surface state forming a gapped Dirac cone.
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Submitted 7 December, 2018;
originally announced December 2018.
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Nanoscale characterization of bismuth telluride epitaxic layers by advanced X-ray analysis
Authors:
Sérgio L. Morelhão,
Celso I. Fornari,
Paulo H. O. Rappl,
Eduardo Abramof
Abstract:
Topological insulator surface properties are strongly correlated to structural properties, requiring high-resolution techniques capable of probing both surface and bulk structures at once. In this work, high flux of synchrotron source, recursive equations for fast X-ray dynamical diffraction simulation, and genetic algorithm for data fitting are combined to reveal the detailed structure of bismuth…
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Topological insulator surface properties are strongly correlated to structural properties, requiring high-resolution techniques capable of probing both surface and bulk structures at once. In this work, high flux of synchrotron source, recursive equations for fast X-ray dynamical diffraction simulation, and genetic algorithm for data fitting are combined to reveal the detailed structure of bismuth telluride epitaxic films with thickness ranging from 8 to 168 nm. It includes stacking sequences, thickness and composition of layers in model structures, interface coherence, surface termination and morphology. These results are in agreement with the surface morphology determined by atomic force microscopy. Moreover, by using X-ray data from zero noise area detector to construct three-dimensional reciprocal space maps, insights into the nanostructure of domains and stacking faults in Bi2Te3 films are given.
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Submitted 29 December, 2016;
originally announced December 2016.
