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Reliable Density Functional Theory Predictions of Bandgaps for Materials
Authors:
Chenxi Lu,
Musen Li,
Michael J. Ford,
Rika Kobayashi,
Roger Amos,
Jeffrey R. Reimers
Abstract:
We consider methods for optimizing the bandgap calculation of 3D materials, considering 340 sample materials. Examined are the effects of the choice of the pseudopotential to describe core electrons, the plane-wave basis set cutoff energy, and the Brillouin zone integration. Cost-saving calculations in which the structure is optimized using reduced-quality Brillouin zone integrations and cutoff en…
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We consider methods for optimizing the bandgap calculation of 3D materials, considering 340 sample materials. Examined are the effects of the choice of the pseudopotential to describe core electrons, the plane-wave basis set cutoff energy, and the Brillouin zone integration. Cost-saving calculations in which the structure is optimized using reduced-quality Brillouin zone integrations and cutoff energies were found to lead to experimentally significant errors exceeding 0.1 eV in 18% of cases using the PBE functional and 21% of cases using PBE0. Such cost-savings approaches are therefore not recommended for general applications. Also, the current practice of using unoptimized grids to perform the Brillouin-zone integrations in bandgap calculations is found to be unreliable for 16% of materials using PBE and for 23% using PBE0. A k-space optimization scheme is introduced that interpolates extensive PBE results to determine a generally useful approach that when used in PBE0 calculations is found to be inadequate for only 1.6% of the materials studied.
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Submitted 27 January, 2025;
originally announced January 2025.
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Reliable density functional and G_0 W_0 approaches to the calculation of bandgaps in 2D materials
Authors:
Musen Li,
Michael J. Ford,
Rika Kobayashi,
Roger D. Amos,
Jeffrey R. Reimers
Abstract:
Optimizing density-functional theory (DFT) and G0W0 calculations present coupled problems as orbitals from DFT are needed as G0W0 starting points. Applied to 341 two-dimensional (2D) materials, we demonstrate that CAM-B3LYP provides minimal changes in bandgap (e.g., mean absolute deviation of 0.23 eV) when used to start G0W0 calculations, compared to traditional functionals such as PBE, PBE0, and…
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Optimizing density-functional theory (DFT) and G0W0 calculations present coupled problems as orbitals from DFT are needed as G0W0 starting points. Applied to 341 two-dimensional (2D) materials, we demonstrate that CAM-B3LYP provides minimal changes in bandgap (e.g., mean absolute deviation of 0.23 eV) when used to start G0W0 calculations, compared to traditional functionals such as PBE, PBE0, and HSE06 (1.07 eV, 1.48 eV, and 1.51 eV, respectively). CAM-B3LYP also delivers the smallest changes in orbital representation. These and other results indicate the suitability of CAM-B3LYP as a density-functional approach for modelling 2D materials, as well as for use in optimizing G0W0 calculations. Our findings parallel well established features of applications to molecules, as well as for spectroscopic applications involving 3D materials.
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Submitted 8 July, 2023;
originally announced July 2023.
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Electrostatic moiré potential from twisted-hBN layers
Authors:
Dong Seob Kim,
Roy C. Dominguez,
Rigo Mayorga-Luna,
Dingyi Ye,
Jacob Embley,
Tixuan Tan,
Yue Ni,
Zhida Liu,
Mitchell Ford,
Frank Y. Gao,
Saba Arash,
Kenji Watanabe,
Takashi Taniguchi,
Suenne Kim,
Chih-Kang Shih,
Keji Lai,
Wang Yao,
Li Yang,
Xiaoqin Li,
Yoichi Miyahara
Abstract:
Moiré superlattices formed by vertically stacking van der Waals layers host a rich variety of correlated electronic phases and function as novel photonic materials. The moiré potential of the superlattice, however, is fixed by the interlayer coupling of the stacked functional layers (e.g. graphene) and dependent on carrier types (e.g. electrons or holes) and valleys (e.g. Γ vs. K). In contrast, tw…
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Moiré superlattices formed by vertically stacking van der Waals layers host a rich variety of correlated electronic phases and function as novel photonic materials. The moiré potential of the superlattice, however, is fixed by the interlayer coupling of the stacked functional layers (e.g. graphene) and dependent on carrier types (e.g. electrons or holes) and valleys (e.g. Γ vs. K). In contrast, twisted hexagonal boron nitride (hBN) layers are predicted to impose a periodic electrostatic potential that may be used to engineer the properties of an adjacent functional thin layer. Here, we show that this potential is described by a simple theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. We demonstrate that the potential depth and profile can be further controlled by assembling a double moiré structure. When the twist angles are similar at the two interfaces, the potential is deepened by adding the potential from the two twisted interfaces, reaching ~ 400 meV. When the twist angles are dissimilar at the two interfaces, multi-level polarization states are observed. As an example of controlling a functional layer, we demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in a semiconductor monolayer. These findings suggest exciting opportunities for engineering properties of an adjacent functional layer using the surface potential of a twisted hBN substrate.
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Submitted 13 June, 2023;
originally announced June 2023.
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Accurate prediction of the properties of materials using the CAM-B3LYP Density Functional
Authors:
Musen Li,
Jeffrey R. Reimers,
Michael J. Ford,
Rika Kobayashi,
Roger D. Amos
Abstract:
Density functionals with asymptotic corrections to the long-range potential provide entry-level methods for calculations on molecules that can sustain charge transfer, but similar applications in Materials Science are rare. We describe an implementation of the CAM-B3LYP range-separated functional within the Vienna Ab-initio Simulation Package (VASP) framework, together with its analytical function…
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Density functionals with asymptotic corrections to the long-range potential provide entry-level methods for calculations on molecules that can sustain charge transfer, but similar applications in Materials Science are rare. We describe an implementation of the CAM-B3LYP range-separated functional within the Vienna Ab-initio Simulation Package (VASP) framework, together with its analytical functional derivatives. Results obtained for eight representative materials: aluminum, diamond, graphene, silicon, NaCl, MgO, 2D h-BN and 3D h-BN, indicate that CAM-B3LYP predictions embody mean-absolute deviations (MAD) compared to HSE06 that are reduced by a factor of 6 for lattice parameters, 4 for quasiparticle band gaps, 3 for the lowest optical excitation energies, and 6 for exciton binding energies. Further, CAM-B3LYP appears competitive compared to ab initio G0W0 and Bethe-Salpeter equation (BSE) approaches. The CAM-B3LYP implementation in VASP was verified by comparison of optimized geometries and reaction energies for isolated molecules taken from the ACCDB database, evaluated in large periodic unit cells, to analogous results obtained using Gaussian basis sets. Using standard GW pseudopotentials and energy cutoffs for the plane-wave calculations and the aug-cc-pV5Z basis set for the atomic-basis ones, the MAD in energy for 1738 chemical reactions was 0.34 kcal mol-1, whilst for 480 unique bond lengths this was 0.0036 Å; these values reduced to 0.28 kcal mol-1 (largest error 0.94 kcal mol-1) and 0.0009 Å by increasing the plane-wave cuttoff energy to 850 eV.
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Submitted 2 February, 2022; v1 submitted 14 February, 2021;
originally announced February 2021.
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Photoluminescence and photochemistry of the $V_B^-$ defect in hexagonal boron nitride
Authors:
Jeffrey R. Reimers,
Jun Shen,
Mehran Kianinia,
Carlo Bradac,
Igor Aharonovich,
Michael J. Ford,
Piotr Piecuch
Abstract:
Extensive photochemical and spectroscopic properties of the $V_B^-$ defect in hexagonal boron nitride are calculated, concluding that the observed photoemission associated with recently observed optically-detected magnetic resonance is most likely of (1)3E" to (1)3A2' origin. Rapid intersystem crossing from the defect's triplet to singlet manifolds explains the observed short excited-state lifetim…
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Extensive photochemical and spectroscopic properties of the $V_B^-$ defect in hexagonal boron nitride are calculated, concluding that the observed photoemission associated with recently observed optically-detected magnetic resonance is most likely of (1)3E" to (1)3A2' origin. Rapid intersystem crossing from the defect's triplet to singlet manifolds explains the observed short excited-state lifetime and very low quantum yield. New experimental results reveal smaller intrinsic spectral bandwidths than previously recognized, interpreted in terms spectral narrowing and zero-phonon-line shifting induced by the Jahn-Teller effect. Different types of computational methods are applied to map out the complex triplet and singlet defect manifolds, including the doubly ionised formulation of the equation-of-motion coupled-cluster theory that is designed to deal with the open-shell nature of defect states, and mixed quantum-mechanics/molecular-mechanics schemes enabling 5763-atom simulations. Two other energetically feasible spectral assignments from amongst the singlet and triplet manifolds are considered, but ruled out based on inappropriate photochemical properties.
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Submitted 29 June, 2020;
originally announced June 2020.
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Density functionals with asymptotic-potential corrections are required for the simulation of spectroscopic properties of materials
Authors:
Musen Li,
Rika Kobayashi,
Roger D. Amos,
Michael J. Ford,
Jeffrey R. Reimers
Abstract:
Five effects of correction of the asymptotic potential error in density functionals are identified that significantly improve calculated properties of molecular excited states involving charge-transfer character. Newly developed materials-science computational methods are used to demonstrate how these effects manifest in materials spectroscopy. Connection is made considering chlorophyll-a as a par…
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Five effects of correction of the asymptotic potential error in density functionals are identified that significantly improve calculated properties of molecular excited states involving charge-transfer character. Newly developed materials-science computational methods are used to demonstrate how these effects manifest in materials spectroscopy. Connection is made considering chlorophyll-a as a paradigm for molecular spectroscopy, 22 iconic materials as paradigms for 3D materials spectroscopy, and the VN- defect in hexagonal boron nitride as an example of the spectroscopy of defects in 2D materials pertaining to nanophotonics. Defects can equally be thought of as being "molecular" and "materials" in nature and hence bridge the realms of molecular and materials spectroscopies. It is concluded that the density functional HSE06, currently considered as the standard for accurate calculations of materials spectroscopy, should be replaced, in most instances, by the computationally similar but asymptotically corrected CAM-B3LYP functional, with some specific functionals for materials use only providing further improvements.
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Submitted 2 February, 2022; v1 submitted 29 June, 2020;
originally announced June 2020.
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Possible nanophotonics applications of the $V_N N_B$ defect in hexagonal boron nitride
Authors:
A. Sajid,
Jeffrey R. Reimers,
Rika Kobayashi,
Michael J. Ford
Abstract:
The $V_N N_B$ defect in hexagonal boron nitride (h-BN), comprising a nitrogen vacancy adjacent to a nitrogen-for-boron substitution, is modelled in regard to its possible usefulness in a nanophotonics device. The modelling is done on both a simple model compound and on a 2D periodic representation of the defect, considering its magnetic and spectroscopic properties. The electronic distribution in…
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The $V_N N_B$ defect in hexagonal boron nitride (h-BN), comprising a nitrogen vacancy adjacent to a nitrogen-for-boron substitution, is modelled in regard to its possible usefulness in a nanophotonics device. The modelling is done on both a simple model compound and on a 2D periodic representation of the defect, considering its magnetic and spectroscopic properties. The electronic distribution in $V_N N_B$ excited states is very open-shell in nature, and to deal with this two new computational methods are developed: one allows standard density-functional theory (DFT) calculations to be employed to evaluate state energies, the other introduces techniques needed to apply the VASP computational package to these and many other problems involving excited states. Also of general use, results from DFT calculations are then calibrated against those from ab initio methods, seeking robust computational schemes. These innovations allow 45 electronic states of the defect in its neutral, +1 and -1 charged forms to be considered. The charged forms of the defect are predicted to display properties of potential interest to nanophotonics.
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Submitted 29 June, 2020;
originally announced June 2020.
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Convergence of defect energetics calculations
Authors:
Jeffrey R. Reimers,
A. Sajid,
Rika Kobayashi,
Michael J. Ford
Abstract:
Determination of the chemical and spectroscopic natures of defects in materials such as hexagonal boron nitride (h-BN) remains a serious challenge for both experiment and theory. To establish basics needs for reliable calculations, we consider a model defect $V_N N_B$ in h-BN in which a boron-for-nitrogen substitution is accompanied by a nitrogen vacancy, examining its lowest-energy transition, (1…
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Determination of the chemical and spectroscopic natures of defects in materials such as hexagonal boron nitride (h-BN) remains a serious challenge for both experiment and theory. To establish basics needs for reliable calculations, we consider a model defect $V_N N_B$ in h-BN in which a boron-for-nitrogen substitution is accompanied by a nitrogen vacancy, examining its lowest-energy transition, (1)2B1 to (1)2A1. This provides a relatively simple test system as open-shell and charge-transfer effects, that are difficult to model and can dominate defect spectroscopy, are believed to be small. We establish calculation convergence with respect to sample size using both cluster and 2D-periodic models, convergence with respect to numerical issues such as use of plane-wave or Gaussian-basis-set expansions, and convergence with respect to the treatment of electron correlation. The results strongly suggest that poor performance of computational methods for defects of other natures arise through intrinsic methodological shortcomings.
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Submitted 29 June, 2020;
originally announced June 2020.
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Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride
Authors:
Noah Mendelson,
Dipankar Chugh,
Jeffrey R. Reimers,
Tin S. Cheng,
Andreas Gottscholl,
Hu Long,
Christopher J. Mellor,
Alex Zettl,
Vladimir Dyakonov,
Peter H. Beton,
Sergei V. Novikov,
Chennupati Jagadish,
Hark Hoe Tan,
Michael J. Ford,
Milos Toth,
Carlo Bradac,
Igor Aharonovich
Abstract:
Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by…
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Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices.
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Submitted 20 April, 2020; v1 submitted 2 March, 2020;
originally announced March 2020.
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Identification of defects responsible for optically detected magnetic resonance in hexagonal boron nitride
Authors:
A Sajid,
Kristian S Thygesen,
Jeffrey R Reimers,
Michael J Ford
Abstract:
Crystal defects in the two-dimensional insulator hexagonal boron nitride (hBN) can host localised electronic states that are candidates for applications in quantum technology, yet the precise chemical and structural nature of the defects measured in experiments remains unknown. Recently, optically detected magnetic resonance (ODMR) has been measured from defects in hBN for the first time, providin…
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Crystal defects in the two-dimensional insulator hexagonal boron nitride (hBN) can host localised electronic states that are candidates for applications in quantum technology, yet the precise chemical and structural nature of the defects measured in experiments remains unknown. Recently, optically detected magnetic resonance (ODMR) has been measured from defects in hBN for the first time, providing rich information. In one case a tentative assignment has been made to the VB- defect. Here, we report density-functional theory (DFT) calculations of the energetics, zero field splitting parameter, D, and hyperfine coupling tensor, A, that confirm this assignment. We also show that a second ODMR measurement is consistent with the VN- defect. In both cases, the location of the defect at the edge or centre of layers is important. This advances our atomic-scale understanding of crystal defects in hBN, which is necessary for harnessing the potential of these systems for quantum technology applications.
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Submitted 16 December, 2019;
originally announced December 2019.
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Impressive computational acceleration by using machine learning for 2-dimensional super-lubricant materials discovery
Authors:
Marco Fronzi,
Mutaz Abu Ghazaleh,
Olexandr Isayev,
David A. Winkler,
Joe Shapter,
Michael J. Ford
Abstract:
The screening of novel materials is an important topic in the field of materials science. Although traditional computational modeling, especially first-principles approaches, is a very useful and accurate tool to predict the properties of novel materials, it still demands extensive and expensive state-of-the-art computational resources. Additionally, they can be often extremely time consuming. We…
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The screening of novel materials is an important topic in the field of materials science. Although traditional computational modeling, especially first-principles approaches, is a very useful and accurate tool to predict the properties of novel materials, it still demands extensive and expensive state-of-the-art computational resources. Additionally, they can be often extremely time consuming. We describe a time and resource-efficient machine learning approach to create a large dataset of structural properties of van der Waals layered structures. In particular, we focus on the interlayer energy and the elastic constant of layered materials composed of two different 2-dimensional (2D) structures, that are important for novel solid lubricant and super-lubricant materials. We show that machine learning models can recapitulate results of computationally expansive approaches (i.e. density functional theory) with high accuracy.
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Submitted 29 July, 2020; v1 submitted 20 November, 2019;
originally announced November 2019.
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Single photon emitters in hexagonal boron nitride: A review of progress
Authors:
A. Sajid,
Michael J. Ford,
Jeffrey R. Reimers
Abstract:
This report summarizes progress made in understanding properties such as zero-phonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applicatio…
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This report summarizes progress made in understanding properties such as zero-phonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applications. Critical analyses of the experimental literature and data interpretation, as well as theoretical approaches used to predict properties, are made. In particular, computational and theoretical limitations and challenges are discussed, with a range of suggestions made to overcome these limitations, striving to achieve realistic predictions concerning the nature of emitting centers. A symbiotic relationship is required in which calculations focus on properties that can easily be measured, whilst experiments deliver results in a form facilitating mass-produced calculations.
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Submitted 1 November, 2019;
originally announced November 2019.
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Van der Waals forces control ferroelectric-antiferroelectric ordering in ABP2X6 laminar materials
Authors:
Jeffrey R. Reimers,
Sherif Abdulkader Tawfik,
Michael J. Ford
Abstract:
We show how van der Waals (vdW) forces outcompete covalent and ionic forces to control ferroelectric ordering in CuInP2S6 nanoflakes as well as in CuInP2S6 and CuBiP2Se6 crystals. While the self-assembly of these 2D layered materials is clearly controlled by vdW effects, this result indicates that the internal layer structure is also similarly controlled. Using up to 14 first-principles computatio…
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We show how van der Waals (vdW) forces outcompete covalent and ionic forces to control ferroelectric ordering in CuInP2S6 nanoflakes as well as in CuInP2S6 and CuBiP2Se6 crystals. While the self-assembly of these 2D layered materials is clearly controlled by vdW effects, this result indicates that the internal layer structure is also similarly controlled. Using up to 14 first-principles computational methods, we predict that the bilayers of both materials should be antiferroelectric. However, antiferroelectric nanoflakes and bulk materials are shown to embody two fundamentally different types of inter-layer interactions, with vdW forces strongly favouring one and strongly disfavouring the other compared to ferroelectric ordering. Strong specific vdW interactions involving the Cu atoms control this effect. Thickness-dependent significant cancellation of these two large opposing vdW contributions results in a small net effect that interacts with weak ionic contributions to control ferroelectric ordering.
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Submitted 29 May, 2018;
originally announced May 2018.
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van der Waals forces control the internal chemical structure of monolayers within ABP2X6 lamellar materials
Authors:
Sherif Abdulkader Tawfik,
Jeffrey R. Reimers,
Catherine Stampfl,
Michael J. Ford
Abstract:
Following the recent demonstration that van der Waals forces control the ferroelectric ordering of layers within nanoflakes and bulk samples of CuBiP2Se6 and CuInP2S6, it is demonstrated that they also control the internal geometrical structure of isolated monolayers of these materials. This internal structure involves large displacements of the copper atoms, either normal to the layer plane or el…
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Following the recent demonstration that van der Waals forces control the ferroelectric ordering of layers within nanoflakes and bulk samples of CuBiP2Se6 and CuInP2S6, it is demonstrated that they also control the internal geometrical structure of isolated monolayers of these materials. This internal structure involves large displacements of the copper atoms, either normal to the layer plane or else within the plane, that change its ligation environment. In both cases, the van der Waals dispersion force out-competes traditional bonding effects to control structure. However, we find that the aspects of the dispersion force giving rise to each effect are uncorrelated: long range effects control inter-layer ferroelectric ordering whereas short-range effects control internal layer structure. These conclusions are drawn considering predicted properties of monolayers, bilayers, and bulk materials obtained using 14 density-functional-theory based methods. While the different methods used often predict starkly different quantitative results, they concur as to the basic nature of ABP2X6 materials. Of the methods used, only the PBE-D3 and optPBEvdW methods were found to predict a wide range of observed properties without serious disparity. Finding optimal computational methods remains a significant challenge for which the unusual multi-scale nature of the van der Waals interactions in ABP2X6 materials provides demanding criteria.
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Submitted 29 May, 2018;
originally announced May 2018.
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Superconductivity in intercalated buckled two-dimensional materials: KGe$_2$
Authors:
Sherif Abdulkader Tawfik,
Catherine Stampfl,
Michael J. Ford
Abstract:
Germanene has emerged as a novel two-dimensional material with various interesting properties and applications. Here we report the possibility of superconductivity in a stable potassium intercalated germanene compound, KGe$_2$, with a transition temperature $T_c \sim 11$ K, and an electron-phonon coupling of 1.9. Applying a 5\% tensile strain, which reduces the buckling height by 4.5\%, leads to t…
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Germanene has emerged as a novel two-dimensional material with various interesting properties and applications. Here we report the possibility of superconductivity in a stable potassium intercalated germanene compound, KGe$_2$, with a transition temperature $T_c \sim 11$ K, and an electron-phonon coupling of 1.9. Applying a 5\% tensile strain, which reduces the buckling height by 4.5\%, leads to the reduction of the electron-phonon coupling by 11\% and a slight increase in $T_c \sim 12$ K. That is, strong electron-phonon coupling results from the buckled structure of the germanene layers. Despite being an intercalated van der Waals material similar to intercalated graphite superconductors, it does not possess an occupied interlayer state.
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Submitted 6 April, 2018;
originally announced April 2018.
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BOPfox program for tight-binding and analytic bond-order potential calculations
Authors:
T. Hammerschmidt,
B. Seiser,
M. E. Ford,
A. N. Ladines,
S. Schreiber,
N. Wang,
J. Jenke,
Y. Lysogorskiy,
C. Teijeiro,
M. Mrovec,
M. Cak,
E. R. Margine,
D. G. Pettifor,
R. Drautz
Abstract:
Bond-order potentials (BOPs) provide a local and physically transparent description of the interatomic interaction. Here we describe the efficient implementation of analytic BOPs in the BOPfox program and library. We discuss the integration of the underlying non-magnetic, collinear-magnetic and noncollinear-magnetic tight-binding models that are evaluated by the analytic BOPs. We summarize the flo…
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Bond-order potentials (BOPs) provide a local and physically transparent description of the interatomic interaction. Here we describe the efficient implementation of analytic BOPs in the BOPfox program and library. We discuss the integration of the underlying non-magnetic, collinear-magnetic and noncollinear-magnetic tight-binding models that are evaluated by the analytic BOPs. We summarize the flow of an analytic BOP calculation including the determination of self-returning paths for computing the moments, the self-consistency cycle, the estimation of the band-width from the recursion coefficients, and the termination of the BOP expansion. We discuss the implementation of the calculations of forces, stresses and magnetic torques with analytic BOPs. We show the scaling of analytic BOP calculations with the number of atoms and moments, present options for speeding up the calculations and outline different concepts of parallelisation. In the appendix we compile the implemented equations of the analytic BOP methodology and comments on the implementation. This description should be relevant for other implementations and further developments of analytic bond-order potentials.
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Submitted 29 July, 2019; v1 submitted 20 March, 2018;
originally announced March 2018.
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Defect states in hexagonal boron nitride: Assignments of observed properties and prediction of properties relevant to quantum computation
Authors:
A. Sajid,
Jeffrey R. Reimers,
Michael J. Ford
Abstract:
Key properties of nine possible defect sites in hexagonal boron nitride (h-BN) are predicted using density-functional theory and are corrected by applying results from high-level ab initio calculations. Observed h-BN electron-paramagnetic resonance signals at 22.4, 20.83, and 352.70 MHz are assigned to VN, CN, and VNO2B, respectively, while the observed photoemission at 1.95 eV is assigned to VNCB…
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Key properties of nine possible defect sites in hexagonal boron nitride (h-BN) are predicted using density-functional theory and are corrected by applying results from high-level ab initio calculations. Observed h-BN electron-paramagnetic resonance signals at 22.4, 20.83, and 352.70 MHz are assigned to VN, CN, and VNO2B, respectively, while the observed photoemission at 1.95 eV is assigned to VNCB. Detailed consideration of the available excited states, allowed spin-orbit couplings, zero-field splitting, and optical transitions are made for the two related defects VNCB and VBCN. VNCB is proposed for realizing long-lived quantum memory in h-BN. VBCN is predicted to have a triplet ground state, implying that spin initialization by optical means is feasible and suitable optical excitations are identified, making this defect of interest for possible quantum-qubit operations.
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Submitted 9 February, 2018;
originally announced February 2018.
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Evaluation of van der Waals density functionals for layered materials
Authors:
Sherif Abdulkader Tawfik,
Tim Gould,
Catherine Stamp,
Michael J. Ford
Abstract:
In 2012, Bjorkman et al. posed the question "Are we van der Waals ready?" [J. Phys.: Condens. Matter, 2012, 24, 424218] about the ability of ab initio modelling to reproduce van der Waals (vdW) dispersion forces in layered materials. The answer at that time was no, however. Here we report on a new generation of vdW dispersion models and show that one, fractionally-ionic atom (FIA) theory, offers c…
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In 2012, Bjorkman et al. posed the question "Are we van der Waals ready?" [J. Phys.: Condens. Matter, 2012, 24, 424218] about the ability of ab initio modelling to reproduce van der Waals (vdW) dispersion forces in layered materials. The answer at that time was no, however. Here we report on a new generation of vdW dispersion models and show that one, fractionally-ionic atom (FIA) theory, offers close to quantitative predictions for layered structures. Furthermore, it does so from a qualitatively correct picture of dispersion forces. Other methods, such as D3 and optB88vdW also work well, albeit with some exceptions. We thus argue that we are nearly vdW ready, and that some modern dispersion methods are accurate enough to be used for nanomaterial prediction, albeit with some caution required.
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Submitted 28 March, 2018; v1 submitted 22 December, 2017;
originally announced December 2017.
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Single Photon Emission from Plasma Treated 2D Hexagonal Boron Nitride
Authors:
Zai-Quan Xu,
Christopher Elbadawi,
Toan Trong Tran,
Mehran Kianinia,
Xiuling Li,
Daobin Liu,
Timothy B. Hoffman,
Minh Nguyen,
Sejeong Kim,
James H. Edgar,
Xiaojun Wu,
Li Song,
Sajid Ali,
Mike Ford,
Milos Toth,
Igor Aharonovich
Abstract:
Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Yet, synthesis of color centers that act as single photon emitters which are suitable for on-chip applications is still beyond reach. Here, we report a number of plasma and thermal annealing methods for the fabrication of emitters in…
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Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Yet, synthesis of color centers that act as single photon emitters which are suitable for on-chip applications is still beyond reach. Here, we report a number of plasma and thermal annealing methods for the fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprised of Ar plasma etching and subsequent annealing in Ar is highly robust, and yields a seven-fold increase in the concentration of emitters in hBN. The initial plasma etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature and have an emission energy distribution that is red-shifted relative to that of pristine hBN. An analysis of emitters fabricated by a range of plasma and annealing treatments, combined with a theoretical investigation of point defects in hBN indicates that single photon emitters characterized by a high degree of photostability and emission wavelengths greater than ~700 nm are associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters by annealing hBN in an oxidative atmosphere. Our findings advance present understanding of the structure of quantum emitter in hBN and enhance the nanofabrication toolkit that is needed to realize integrated quantum nanophotonics based on 2D materials.
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Submitted 19 October, 2017;
originally announced October 2017.
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First principles investigation of quantum emission from hBN defects
Authors:
Sherif Abdulkader Tawfik,
Sajid Ali,
Marco Fronzi,
Mehran Kianinia,
Toan Trong Tran,
Catherine Stampfl,
Igor Aharonovich,
Milos Toth,
Michael J. Ford
Abstract:
Hexagonal boron nitride (hBN) has recently emerged as a fascinating platform for room-temperature quantum photonics due to the discovery of robust visible light single-photon emitters. In order to utilize these emitters, it is necessary to have a clear understanding of their atomic structure and the associated excitation processes that give rise to this single photon emission. Here we perform dens…
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Hexagonal boron nitride (hBN) has recently emerged as a fascinating platform for room-temperature quantum photonics due to the discovery of robust visible light single-photon emitters. In order to utilize these emitters, it is necessary to have a clear understanding of their atomic structure and the associated excitation processes that give rise to this single photon emission. Here we perform density-functional theory (DFT) and constrained DFT calculations for a range of hBN point defects in order to identify potential emission candidates. By applying a number of criteria on the electronic structure of the ground state and the atomic structure of the excited states of the considered defects, and then calculating the Huang-Rhys (HR) factor, we find that the CBVN defect, in which a carbon atom substitutes a boron atom and the opposite nitrogen atom is removed, is a potential emission source with a HR factor of 1.66, in good agreement with the experimental HR factor. We calculate the photoluminescence (PL) line shape for this defect and find that it reproduces a number of key features in the the experimental PL lineshape.
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Submitted 13 June, 2017; v1 submitted 16 May, 2017;
originally announced May 2017.
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Tunable and high purity room-temperature single photon emission from atomic defects in hexagonal boron nitride
Authors:
Gabriele Grosso,
Hyowon Moon,
Benjamin Lienhard,
Sajid Ali,
Dmitri K. Efetov,
Marco M. Furchi,
Pablo Jarillo-Herrero,
Michael J. Ford,
Igor Aharonovich,
Dirk Englund
Abstract:
Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission…
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Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single-photon purity. We report high single photon count rates exceeding 10^7 counts/sec at saturation, which is the highest single photon detection rate for room-temperature single photon emitters, to our knowledge. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.
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Submitted 10 November, 2016;
originally announced November 2016.
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Robust Solid State Quantum System Operating at 800 K
Authors:
Mehran Kianinia,
Sherif Abdulkader Tawfik,
Blake Regan,
Toan Trong Tran,
Michael J. Ford,
Igor Aharonovich,
Milos Toth
Abstract:
Realization of Quantum information and communications technologies requires robust, stable solid state single photon sources. However, most existing sources cease to function above cryogenic or room temperature due to thermal ionization or strong phonon coupling which impede their emissive and quantum properties. Here we present an efficient single photon source based on a defect in a van der Waal…
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Realization of Quantum information and communications technologies requires robust, stable solid state single photon sources. However, most existing sources cease to function above cryogenic or room temperature due to thermal ionization or strong phonon coupling which impede their emissive and quantum properties. Here we present an efficient single photon source based on a defect in a van der Waals crystal that is optically stable and operates at elevated temperatures of up to 800 K. The quantum nature of the source and the photon purity are maintained upon heating to 800 K and cooling back to room temperature. Our report of a robust high temperature solid state single photon source constitutes a significant step to-wards practical, integrated quantum technologies for real-world environments.
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Submitted 9 November, 2016;
originally announced November 2016.
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Robust multicolor single photon emission from point defects in hexagonal boron nitride
Authors:
Toan Trong Tran,
Christopher ElBadawi,
Daniel Totonjian,
Charlene J Lobo,
Gabriele Grosso,
Hyowon Moon,
Dirk R. Englund,
Michael J. Ford,
Igor Aharonovich,
Milos Toth
Abstract:
Hexagonal boron nitride (hBN) is an emerging two dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report a broad range of multicolor room temperature single photon emissions across the visible and the near infrared spectral ranges from point defects in hBN multilayers. We show that the emitters can be categorized into two general groups, but…
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Hexagonal boron nitride (hBN) is an emerging two dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report a broad range of multicolor room temperature single photon emissions across the visible and the near infrared spectral ranges from point defects in hBN multilayers. We show that the emitters can be categorized into two general groups, but most likely possess similar crystallographic structure. We further show two approaches for engineering of the emitters using either electron beam irradiation or annealing, and characterize their photophysical properties. The emitters exhibit narrow line widths of sub 10 nm at room temperature, and a short excited state lifetime with high brightness. Remarkably, the emitters are extremely robust and withstand aggressive annealing treatments in oxidizing and reducing environments. Our results constitute the first step towards deterministic engineering of single emitters in 2D materials and hold great promise for the use of defects in boron nitride as sources for quantum information processing and nanophotonics.
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Submitted 31 March, 2016;
originally announced March 2016.
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Quantum Emission From Hexagonal Boron Nitride Monolayers
Authors:
Toan Trong Tran,
Kerem Bray,
Michael J. Ford,
Milos Toth,
Igor Aharonovich
Abstract:
Atomically thin van der Waals crystals have recently enabled new scientific and technological breakthroughs across a variety of disciplines in materials science, nanophotonics and physics. However, non-classical photon emission from these materials has not been achieved to date. Here we report room temperature quantum emission from hexagonal boron nitride nanoflakes. The single photon emitter exhi…
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Atomically thin van der Waals crystals have recently enabled new scientific and technological breakthroughs across a variety of disciplines in materials science, nanophotonics and physics. However, non-classical photon emission from these materials has not been achieved to date. Here we report room temperature quantum emission from hexagonal boron nitride nanoflakes. The single photon emitter exhibits a combination of superb quantum optical properties at room temperature that include the highest brightness reported in the visible part of the spectrum, narrow line width, absolute photo-stability, a short excited state lifetime and a high quantum efficiency. Density functional theory modeling suggests that the emitter is the antisite nitrogen vacancy defect that is present in single and multi-layer hexagonal boron nitride. Our results constitute the unprecedented potential of van der Waals crystals for nanophotonics, optoelectronics and quantum information processing.
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Submitted 24 April, 2015;
originally announced April 2015.
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Ab initio Molecular Dynamical Investigation of the Finite Temperature Behavior of the Tetrahedral Au$_{19}$ and Au$_{20}$ Clusters
Authors:
Sailaja Krishnamurty,
Ghazal Shafai,
D. G. Kanhere,
B. Soulé de Bas,
M. J. Ford
Abstract:
Density functional molecular dynamics simulations have been carried out to understand the finite temperature behavior of Au$_{19}$ and Au$_{20}$ clusters. Au$_{20}$ has been reported to be a unique molecule having tetrahedral geometry, a large HOMO-LUMO energy gap and an atomic packing similar to that of the bulk gold (J. Li et al., Science, {\bf 299} 864, 2003). Our results show that the geomet…
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Density functional molecular dynamics simulations have been carried out to understand the finite temperature behavior of Au$_{19}$ and Au$_{20}$ clusters. Au$_{20}$ has been reported to be a unique molecule having tetrahedral geometry, a large HOMO-LUMO energy gap and an atomic packing similar to that of the bulk gold (J. Li et al., Science, {\bf 299} 864, 2003). Our results show that the geometry of Au$_{19}$ is exactly identical to that of Au$_{20}$ with one missing corner atom (called as vacancy). Surprisingly, our calculated heat capacities for this nearly identical pair of gold cluster exhibit dramatic differences. Au$_{20}$ undergoes a clear and distinct solid like to liquid like transition with a sharp peak in the heat capacity curve around 770 K. On the other hand, Au$_{19}$ has a broad and flat heat capacity curve with continuous melting transition. This continuous melting transition turns out to be a consequence of a process involving series of atomic rearrangements along the surface to fill in the missing corner atom. This results in a restricted diffusive motion of atoms along the surface of Au$_{19}$ between 650 K to 900 K during which the shape of the ground state geometry is retained. In contrast, the tetrahedral structure of Au$_{20}$ is destroyed around 800 K, and the cluster is clearly in a liquid like state above 1000 K. Thus, this work clearly demonstrates that (i) the gold clusters exhibit size sensitive variations in the heat capacity curves and (ii) the broad and continuous melting transition in a cluster, a feature which has so far been attributed to the disorder or absence of symmetry in the system, can also be a consequence of a defect (absence of a cap atom) in the structure.
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Submitted 12 December, 2006;
originally announced December 2006.
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Idealized Slab Plasma approach for the study of Warm Dense Matter
Authors:
A. Ng,
T. Ao,
F. Perrot,
M. W. C. Dharma-wardana,
M. E. Foord
Abstract:
Recently, warm dense matter (WDM) has emerged as an interdisciplinary field that draws increasing interest in plasma physics, condensed matter physics, high pressure science, astrophysics, inertial confinement fusion, as well as materials science under extreme conditions. To allow the study of well-defined WDM states, we have introduced the concept of idealized-slab plasmas that can be realized…
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Recently, warm dense matter (WDM) has emerged as an interdisciplinary field that draws increasing interest in plasma physics, condensed matter physics, high pressure science, astrophysics, inertial confinement fusion, as well as materials science under extreme conditions. To allow the study of well-defined WDM states, we have introduced the concept of idealized-slab plasmas that can be realized in the laboratory via (i) the isochoric heating of a solid and (ii) the propagation of a shock wave in a solid. The application of this concept provides new means for probing the dynamic conductivity, equation of state, ionization and opacity. These approaches are presented here using results derived from first-principles (density-functional type) theory, Thomas-Fermi type theory, and numerical simulations.
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Submitted 9 May, 2005;
originally announced May 2005.