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Showing 1–2 of 2 results for author: Fonseca, J E

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  1. arXiv:1310.4805  [pdf, ps, other

    cond-mat.mes-hall

    Efficient and realistic device modeling from atomic detail to the nanoscale

    Authors: J. E. Fonseca, T. Kubis, M. Povolotskyi, B. Novakovic, A. Ajoy, G. Hegde, H. Ilatikhameneh, Z. Jiang, P. Sengupta, Y. Tan, G. Klimeck

    Abstract: As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for comprehending the critical multi-scale, multi-physics phenomena through efficient computational approaches and quantitatively modeling new generations of nanoelectronic devices as well as predicting novel device architectures… ▽ More

    Submitted 17 October, 2013; originally announced October 2013.

    Comments: 10 pages, 12 figures

  2. arXiv:1107.0945  [pdf, ps, other

    cond-mat.mtrl-sci

    Continuous local model for two-dimensional spin ice

    Authors: J. E. da Fonseca, C. W. Morais, A. L. Mota, L. H. C. M. Nunes

    Abstract: We propose a classical model Hamiltonian with a ground state presenting a spin ice structure. We analyze the introduction of metastable excitations on this ground state, showing the emergence of pairs of magnetic monopoles. The interaction between monopoles and dipoles in the system is studied. As a consequence, we obtain an effective nonlocal interaction between monopoles and dipoles from a local… ▽ More

    Submitted 14 November, 2016; v1 submitted 5 July, 2011; originally announced July 2011.

    Comments: 11 pages, 5 figures. Revised version, two authors included due their contributions