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Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas
Authors:
Zitong Wang,
Michael Hilke,
Norm Fong,
Guy Austing,
Sergei Studenikin,
Ken West,
Loren Pfeiffer
Abstract:
We report on non-linear transport phenomena at high filling factor and DC current-induced electronic hydrodynamics in an ultra-high mobility (mu=20x10^6 cm^2/Vs) two-dimensional electron gas in a narrow (15 micron wide) GaAs/AlGaAs Hall bar for DC current densities reaching 0.67 A/m. The various phenomena and the boundaries between the phenomena are captured together in a two-dimensional different…
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We report on non-linear transport phenomena at high filling factor and DC current-induced electronic hydrodynamics in an ultra-high mobility (mu=20x10^6 cm^2/Vs) two-dimensional electron gas in a narrow (15 micron wide) GaAs/AlGaAs Hall bar for DC current densities reaching 0.67 A/m. The various phenomena and the boundaries between the phenomena are captured together in a two-dimensional differential resistivity map as a function of magnetic field (up to 250 mT) and DC current. This map, which resembles a phase diagram, demarcate distinct regions dominated by Shubnikov-de Haas (SdH) oscillations (and phase inversion of these oscillations) around zero DC current; negative magnetoresistance and a double-peak feature (both ballistic in origin) around zero field; and Hall field-induced resistance oscillations (HIROs) radiating out from the origin. From a detailed analysis of the data near zero field, we show that increasing the DC current suppresses the electron-electron scattering length that drives a growing hydrodynamic contribution to both the differential longitudinal and transverse (Hall) resistivities. Our approach to induce hydrodynamics with DC current differs from the more usual approach of changing the temperature. We also find a significant (factor of two to four) difference between the quantum lifetime extracted from SdH oscillations, and the quantum lifetime extracted from HIROs. In addition to observing HIRO peaks up to the seventh order, we observe an unexpected HIRO-like feature close to mid-way between the first-order and the second-order HIRO maxima at high DC current.
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Submitted 28 November, 2022;
originally announced November 2022.
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Charge detection using a WSe$_2$ van der Waals heterostructure
Authors:
Justin Boddison-Chouinard,
Alex Bogan,
Norman Fong,
Pedro Barrios,
Jean Lapointe,
Kenji Watanabe,
Takashi Taniguchi,
Adina Luican-Mayer,
Louis Gaudreau
Abstract:
Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstrate that van derWaals heterostructure devices with gated nano-constrictions in monolayer WSe2 can be used as charge detectors for nearby quantum dots. These results open the possibility of implementing charge detection sc…
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Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstrate that van derWaals heterostructure devices with gated nano-constrictions in monolayer WSe2 can be used as charge detectors for nearby quantum dots. These results open the possibility of implementing charge detection schemes based on 2D materials in complex quantum circuits.
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Submitted 22 March, 2022;
originally announced March 2022.
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Gate controlled quantum dots in monolayer WSe2
Authors:
Justin Boddison-Chouinard,
Alex Bogan,
Norman Fong,
Kenji Watanabe,
Takashi Taniguchi,
Sergei Studenikin,
Andrew Sachrajda,
Marek Korkusinski,
Abdulmenaf Altintas,
Maciej Bieniek,
Pawel Hawrylak,
Adina Luican-Mayer,
Louis Gaudreau
Abstract:
Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we…
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Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model.
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Submitted 1 August, 2021;
originally announced August 2021.
