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Optimizing the Ullmann coupling reaction efficiency on an oxide surface by metal atom addition
Authors:
Mikel Abadia,
Ignacio Piquero-Zulaica,
Jens Brede,
Alberto Verdini,
Luca Floreano,
Johannes V. Barth,
Jorge Lobo-Checa,
Martina Corso,
Celia Rogero
Abstract:
The bottom-up synthesis of carbon based nanomaterials directly on semiconductor surfaces allows to decouple their electronic and magnetic properties from the substrates. However, the lack of reactivity on these non-metallic surfaces hinders or reduces significantly the yield of these reactions. Such hurdles practically precludes transferring bottom-up synthesis strategies onto semiconducting and i…
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The bottom-up synthesis of carbon based nanomaterials directly on semiconductor surfaces allows to decouple their electronic and magnetic properties from the substrates. However, the lack of reactivity on these non-metallic surfaces hinders or reduces significantly the yield of these reactions. Such hurdles practically precludes transferring bottom-up synthesis strategies onto semiconducting and insulating surfaces. Here, we achieve a high polymerization yield of terphenyl molecules on the semiconductor TiO$_2$(110) surface by incorporating cobalt atoms as catalysts in the Ullmann coupling reaction. Cobalt atoms trigger the debromination of 4,4-dibromo-p-terphenyl (DBTP) molecules on TiO$_2$(110) and the formation of an intermediate organometallic phase already at room-temperature (RT). As the debromination temperature is drastically reduced, the homo-coupling temperature is also significantly lowered, preventing the desorption of DBTP molecules from the TiO$_2$(110) surface and leading to a radical improvement on the poly-para-phenylene (PPP) polymerization yield. The universality of this mechanism is demonstrated with an iodinated terphenyl derivative (DITP), which shows analogous dehalogenation and polymerization temperatures with a very similar reaction yield. Consequently, we propose to use minute amounts of metal catalyst to drive forward generic bottom-up synthesis strategies on non-metallic surfaces.
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Submitted 20 June, 2023;
originally announced June 2023.
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On-Surface Synthesis of a Pure and Long-Range-Ordered Titanium(IV)-Porphyrin Contact Layer on Titanium Dioxide
Authors:
Giacomo Lovat,
Daniel Forrer,
Mikel Abadia,
Marcos Dominguez,
Maurizio Casarin,
Celia Rogero,
Andrea Vittadini,
Luca Floreano
Abstract:
We show the possibility of tailoring the molecular arrangement, as well as the chemical and structural modifications, of porphyrins at the monolayer saturation coverage on TiO2(110) by Synchrotron photoemission, electron diffraction, STM topography and DFT calculations. Free-base tetra-phenyl-porphyrins (2H-TPP) adsorb on the oxygen rows, where they can spontaneously capture two additional hydroge…
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We show the possibility of tailoring the molecular arrangement, as well as the chemical and structural modifications, of porphyrins at the monolayer saturation coverage on TiO2(110) by Synchrotron photoemission, electron diffraction, STM topography and DFT calculations. Free-base tetra-phenyl-porphyrins (2H-TPP) adsorb on the oxygen rows, where they can spontaneously capture two additional hydrogen atoms at their iminic nitrogens (4H-TPP). Both 2H-TPP and 4H-TPP molecules aggregate into a commensurate phase at the saturation coverage of one monolayer. Upon sample heating, a self-metalation reaction sets in at 100C, yielding full metalation of the saturated monolayer at ~200C. The Ti atoms are extracted from the substrate and, by simultaneous dehydrogenation of the pyrrolic nitrogen atoms, incorporated into the porphyrin macrocycle, where they remain coordinated to two oxygen atoms underneath. Neither the adsorption geometry (on-bridge, atop the oxygen rows) nor the molecular arrangement change across the self-metalation transition up to 300C. On one side, the robustness of this saturation phase makes it a promising system for its implementation into applications for photocatalysis and photovoltaic devices. On the other side, the possible manifestation of metal exchange with the very reactive Ti atoms must be taken into account when designing porphyrin-sensitized solar cells since the critical temperature for the onset of self-metalation is very close to the normal operating temperature of photovoltaic devices.
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Submitted 8 June, 2022; v1 submitted 7 June, 2022;
originally announced June 2022.
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Donor-acceptor discrete optical emission in 2D perovskites
Authors:
Setatira Gorji,
Marie Krecmarova,
Alejandro Molina,
Maria C. Asensio,
Andrés F. Gualdrón-Reyes,
Jesús Rodríguez-Romero,
Hamid Pashaei-Adl,
Rodolfo Canet-Albiach,
Luca Schio,
Massimo Tormen,
Luca Floreano,
Iván Mora-Seró,
Juan Martínez Pastor,
Juan Francisco Sánchez-Royo,
Guillermo Muñoz Matutano
Abstract:
Two-dimensional (2D) van der Waals nanomaterials have attracted considerable attention for potential use in photonic and optoelectronic applications in the nanoscale, due to their outstanding electrical and optical properties, differing from their bulk state. Currently, 2D perovskite belonging to this group of nanomaterials is widely studied for a wide range of optoelectronic applications. Thanks…
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Two-dimensional (2D) van der Waals nanomaterials have attracted considerable attention for potential use in photonic and optoelectronic applications in the nanoscale, due to their outstanding electrical and optical properties, differing from their bulk state. Currently, 2D perovskite belonging to this group of nanomaterials is widely studied for a wide range of optoelectronic applications. Thanks to their excitonic properties, 2D perovskites are also promising materials for photonics and nonlinear devices working at room temperature. Nevertheless, strong excitonic effects can reduce the photocurrent characteristics when using thinner perovskites phases. In this work, we present solid experimental evidence for the presence of single donor-acceptor pair optical transitions in 2D Lead Halide Perovskites, characterized by sub meV linewidths ($\simeq 120 μeV$) and long decay times (5-8 ns). Micro-photoluminescence evidence is supported by detailed Photoemission measurements, and a model simulation. The association of Phenethylammonium with Methylammonium cations, the latter molecule being only present in 2D Halide Perovskites with thicker phases $n \geq 2$, has been identified as the source of the donor-acceptor pair formation, corresponding to the displacement of lead atoms and their replacement by methylamonium. Our seminal study of discrete Donor-Acceptor Pair (DAP) sharp and bright optical transitions in 2D Lead Halide Perovskites opens new routes to implement DAP as the carrier sources for novel designs of optoelectronic devices with 2D perovskites, and will foster the development of future outstanding properties in non-linear quantum technologies.
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Submitted 13 April, 2022;
originally announced April 2022.
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Molecular anchoring stabilizes low valence Ni(I)TPP on copper against thermally induced chemical changes
Authors:
Henning Maximilian Sturmeit,
Iulia Cojocariu,
Matteo Jugovac,
Albano Cossaro,
Alberto Verdini,
Luca Floreano,
Alessandro Sala,
Giovanni Comelli,
Stefania Moro,
Matus Stredansky,
Manuel Corva,
Erik Vesselli,
Peter Puschnig,
Claus Michael Schneider,
Vitaliy Feyer,
Giovanni Zamborlini,
Mirko Cinchetti
Abstract:
Many applications of molecular layers deposited on metal surfaces, ranging from single-atom catalysis to on-surface magnetochemistry and biosensing, rely on the use of thermal cycles to regenerate the pristine properties of the system. Thus, understanding the microscopic origin behind the thermal stability of organic/metal interfaces is fundamental for engineering reliable organic-based devices. H…
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Many applications of molecular layers deposited on metal surfaces, ranging from single-atom catalysis to on-surface magnetochemistry and biosensing, rely on the use of thermal cycles to regenerate the pristine properties of the system. Thus, understanding the microscopic origin behind the thermal stability of organic/metal interfaces is fundamental for engineering reliable organic-based devices. Here, we study nickel porphyrin molecules on a copper surface as an archetypal system containing a metal center whose oxidation state can be controlled through the interaction with the metal substrate. We demonstrate that the strong molecule-surface interaction, followed by charge transfer at the interface, plays a fundamental role in the thermal stability of the layer by rigidly anchoring the porphyrin to the substrate. Upon thermal treatment, the molecules undergo an irreversible transition at 420 K, which is associated with an increase of the charge transfer from the substrate, mostly localized on the phenyl substituents, and a downward tilting of the latters without any chemical modification
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Submitted 18 June, 2020;
originally announced June 2020.
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Keto-enol tautomerization drives the self-assembly of Leucoquinizarin on Au(111)
Authors:
Roberto Costantini,
Luciano Colazzo,
Laura Batini,
Matus Stredansky,
Mohammed S. G. Mohammed,
Simona Achilli,
Luca Floreano,
Guido Fratesi,
Dimas G. de Oteyza,
Albano Cossaro
Abstract:
The self-assembly of Leucoquinizarin molecule on Au(111) surface is shown to be characterized by the molecules mostly in their keto-enolic tautomeric form, with evidences of their temporary switching to other tautomeric forms. This reveals a metastable chemistry of the assembled molecules, to be considered for their possible employment in the formation of more complex hetero-organic interfaces
The self-assembly of Leucoquinizarin molecule on Au(111) surface is shown to be characterized by the molecules mostly in their keto-enolic tautomeric form, with evidences of their temporary switching to other tautomeric forms. This reveals a metastable chemistry of the assembled molecules, to be considered for their possible employment in the formation of more complex hetero-organic interfaces
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Submitted 11 December, 2020; v1 submitted 5 March, 2020;
originally announced March 2020.
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Evaluation of molecular orbital symmetry via oxygen-induced charge transfer quenching at a metal-organic interface
Authors:
Iulia Cojocariu,
Henning Maximilian Sturmeit,
Giovanni Zamborlini,
Albano Cossaro,
Alberto Verdini,
Luca Floreano,
Enrico D'Incecco,
Matus Stredansky,
Erik Vesselli,
Matteo Jugovac,
Mirko Cinchetti,
Vitaliy Feyer,
Claus M. Schneider
Abstract:
Thin molecular films under model conditions are often exploited as benchmarks and case studies to investigate the electronic and structural changes occurring on the surface of metallic electrodes. Here we show that the modification of a metallic surface induced by oxygen adsorption allows the preservation of the geometry of a molecular adlayer, giving access to the determination of molecular orbit…
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Thin molecular films under model conditions are often exploited as benchmarks and case studies to investigate the electronic and structural changes occurring on the surface of metallic electrodes. Here we show that the modification of a metallic surface induced by oxygen adsorption allows the preservation of the geometry of a molecular adlayer, giving access to the determination of molecular orbital symmetries by means of near-edge x-ray absorption fine structure spectroscopy, NEXAFS. As a prototypical example, we exploited Nickel Tetraphenyl Porphyrin molecules deposited on a bare and on an oxygen pre-covered Cu(100) surface. We find that adsorbed atomic oxygen quenches the charge transfer at the metal-organic interface but, in contrast to a thin film sample, maintains the ordered adsorption geometry of the organic molecules. In this way, it is possible to disentangle π* and σ* symmetry orbitals, hence estimating the relative oscillator strength of core level transitions directly from the experimental data, as well as to evaluate and localize the degree of charge transfer in a coupled system. In particular, we neatly single out the σ* contribution associated with the N 1s transition to the mixed N 2px,y-Ni 3dx2-y2 orbital, which falls close to the leading π*-symmetry LUMO resonance.
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Submitted 18 June, 2020; v1 submitted 30 October, 2019;
originally announced October 2019.
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Symmetry, Shape and Energy Variations in Frontier Molecular Orbitals at Organic/Metal Interfaces: the Case of F$_4$TCNQ
Authors:
Patrizia Borghetti,
Ane Sarasola,
Nestor Merino-Diez,
Guillaume Vasseur,
Luca Floreano,
Jorge Lobo-Checa,
Andrés Arnau,
Dimas G. de Oteyza,
J. Enrique Ortega
Abstract:
Near Edge X-ray Absorption, Valence and Core-level Photoemission and Density Functional Theory calculations are used to study molecular levels of tetracyano-2,3,5,6-tetrafluoroquinodimethane (F$_4$TCNQ) deposited on Ag(111) and BiAg$_2$/Ag(111). The high electron affinity of F$_4$TCNQ triggers a large static charge transfer from the substrate, and, more interestingly, hybridization with the substr…
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Near Edge X-ray Absorption, Valence and Core-level Photoemission and Density Functional Theory calculations are used to study molecular levels of tetracyano-2,3,5,6-tetrafluoroquinodimethane (F$_4$TCNQ) deposited on Ag(111) and BiAg$_2$/Ag(111). The high electron affinity of F$_4$TCNQ triggers a large static charge transfer from the substrate, and, more interestingly, hybridization with the substrate leads to a radical change of symmetry, shape and energy of frontier molecular orbitals. The Lowest Unoccupied Molecular Orbital (LUMO) shifts below the Fermi energy, becoming the new Highest Occupied Molecular Orbital ($n$-HOMO), whereas the $n$-LUMO is defined by a hybrid band with mixed $π^*$ and $σ^*$ symmetries, localized at quinone rings and cyano groups, respectively. The presence of Bi influences the way the molecule contacts the substrate with the cyano group. The molecule/surface distance is closer and the bond more extended over substrate atoms in F$_4$TCNQ/Ag(111), whereas in F$_4$TCNQ/BiAg$_2$/Ag(111) the distance is larger and the contact more localized on top of Bi. This does not significantly alter molecular levels, but it causes the respective absence or presence of optical excitations in F$_4$TCNQ core-level spectra.
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Submitted 28 May, 2018;
originally announced May 2018.
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Understanding Charge Transfer in Donor-Acceptor/Metal Systems: A Combined Theoretical and Experimental Study
Authors:
J. L. Cabellos,
D. J. Mowbray,
E. Goiri,
A. El-Sayed,
L. Floreano,
D. G. de Oteyza,
C. Rogero,
J. E. Ortega,
A. Rubio
Abstract:
We develop an effective potential approach for assessing the flow of charge within a two-dimensional donor-acceptor/metal network based on core-level shifts. To do so, we perform both density functional theory (DFT) calculations and x-ray photoemission spectroscopy (XPS) measurements of the core-level shifts for three different monolayers adsorbed on a Ag substrate. Specifically, we consider perfl…
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We develop an effective potential approach for assessing the flow of charge within a two-dimensional donor-acceptor/metal network based on core-level shifts. To do so, we perform both density functional theory (DFT) calculations and x-ray photoemission spectroscopy (XPS) measurements of the core-level shifts for three different monolayers adsorbed on a Ag substrate. Specifically, we consider perfluorinated pentacene (PFP), copper phthalocyanine (CuPc) and their 1:1 mixture (PFP+CuPc) adsorbed on Ag(111).
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Submitted 23 August, 2013;
originally announced August 2013.
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Electronic structure and molecular orientation of a Zn-tetra-phenyl porphyrin multilayer on Si(111)
Authors:
C. Castellarin Cudia,
P. Vilmercati,
R. Larciprete,
C. Cepek,
G. Zampieri,
L. Sangaletti,
S. Pagliara,
A. Verdini,
A. Cossaro,
L. Floreano,
A. Morgante,
L. Petaccia,
S. Lizzit,
C. Battocchio,
G. Polzonetti,
A. Goldoni
Abstract:
The electronic properties and the molecular orientation of Zn-tetraphenyl-porphyrin films deposited on Si(111) have been investigated using synchrotron radiation. For the first time we have revealed and assigned the fine structures in the electronic spectra related to the HOMOs and LUMOs states. This is particularly important in order to understand the orbital interactions, the bond formation an…
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The electronic properties and the molecular orientation of Zn-tetraphenyl-porphyrin films deposited on Si(111) have been investigated using synchrotron radiation. For the first time we have revealed and assigned the fine structures in the electronic spectra related to the HOMOs and LUMOs states. This is particularly important in order to understand the orbital interactions, the bond formation and the evolution of the electronic properties with oxidation or reduction of the porphyrins in supramolecular donor-acceptor complexes used in photovoltaic devices.
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Submitted 7 September, 2005;
originally announced September 2005.
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The pseudomorphic to bulk fcc phase transition of thin Ni films on Pd(100)
Authors:
G. A. Rizzi,
A. Cossaro,
M. Petukhov,
F. Sedona,
G. Granozzi,
F. Bruno,
D. Cvetko,
A. Morgante,
L. Floreano
Abstract:
We have measured the transformation of pseudomorphic Ni films on Pd(100) into their bulk fcc phase as a function of the film thickness. We made use of x-ray diffraction and x-ray induced photoemission to study the evolution of the Ni film and its interface with the substrate. The growth of a pseudomorphic film with tetragonally strained face centered symmetry (fct) has been observed by out-of-pl…
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We have measured the transformation of pseudomorphic Ni films on Pd(100) into their bulk fcc phase as a function of the film thickness. We made use of x-ray diffraction and x-ray induced photoemission to study the evolution of the Ni film and its interface with the substrate. The growth of a pseudomorphic film with tetragonally strained face centered symmetry (fct) has been observed by out-of-plane x-ray diffraction up to a maximum thickness of 10 Ni layers (two of them intermixed with the substrate), where a new fcc bulk-like phase is formed. After the formation of the bulk-like Ni domains, we observed the pseudomorphic fct domains to disappear preserving the number of layers and their spacing. The phase transition thus proceeds via lateral growth of the bulk-like phase within the pseudomorphic one, i.e. the bulk-like fcc domains penetrate down to the substrate when formed. This large depth of the walls separating the domains of different phases is also indicated by the strong increase of the intermixing at the substrate-film interface, which starts at the onset of the transition and continues at even larger thickness. The bulk-like fcc phase is also slightly strained; its relaxation towards the orthomorphic lattice structure proceeds slowly with the film thickness, being not yet completed at the maximum thickness presently studied of 30 Angstrom (i.e. about 17 layers).
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Submitted 13 January, 2004;
originally announced January 2004.
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Surfactant-like Effect and Dissolution of Ultrathin Fe Films on Ag(001)
Authors:
S. Terreni,
A. Cossaro,
G. Gonella,
L. Mattera,
L. Duo',
F. Ciccacci,
D. Cvetko,
L. Floreano,
A. Morgante,
A. Verdini,
M. Canepa
Abstract:
The phase immiscibility and the excellent matching between Ag(001) and Fe(001) unit cells (mismatch 0.8 %) make Fe/Ag growth attractive in the field of low dimensionality magnetic systems. Intermixing could be drastically limited at deposition temperatures as low as 140-150 K. The film structural evolution induced by post-growth annealing presents many interesting aspects involving activated ato…
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The phase immiscibility and the excellent matching between Ag(001) and Fe(001) unit cells (mismatch 0.8 %) make Fe/Ag growth attractive in the field of low dimensionality magnetic systems. Intermixing could be drastically limited at deposition temperatures as low as 140-150 K. The film structural evolution induced by post-growth annealing presents many interesting aspects involving activated atomic exchange processes and affecting magnetic properties. Previous experiments, of He and low energy ion scattering on films deposited at 150 K, indicated the formation of a segregated Ag layer upon annealing at 550 K. Higher temperatures led to the embedding of Fe into the Ag matrix. In those experiments, information on sub-surface layers was attained by techniques mainly sensitive to the topmost layer. Here, systematic PED measurements, providing chemical selectivity and structural information for a depth of several layers, have been accompanied with a few XRD rod scans, yielding a better sensitivity to the buried interface and to the film long range order. The results of this paper allow a comparison with recent models enlightening the dissolution paths of an ultra thin metal film into a different metal, when both subsurface migration of the deposit and phase separation between substrate and deposit are favoured. The occurrence of a surfactant-like stage, in which a single layer of Ag covers the Fe film is demonstrated for films of 4-6 ML heated at 500-550 K. Evidence of a stage characterized by the formation of two Ag capping layers is also reported. As the annealing temperature was increased beyond 700 K, the surface layers closely resembled the structure of bare Ag(001) with the residual presence of subsurface Fe aggregates.
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Submitted 9 January, 2004;
originally announced January 2004.
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Quantum size effects in the low temperature layer-by-layer growth of Pb on Ge(001)
Authors:
L. Floreano,
D. Cvetko,
F. Bruno,
G. Bavdek,
A. Cossaro,
R. Gotter,
A. Verdini,
A. Morgante
Abstract:
The electronic properties of thin metallic films deviate from the corresponding bulk ones when the film thickness is comparable with the wavelength of the electrons at the Fermi level due to quantum size effects (QSE). QSE are expected to affect the film morphology and structure leading to the low temperature (LT) ``electronic growth'' of metals on semiconductors. In particular, layer-by-layer g…
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The electronic properties of thin metallic films deviate from the corresponding bulk ones when the film thickness is comparable with the wavelength of the electrons at the Fermi level due to quantum size effects (QSE). QSE are expected to affect the film morphology and structure leading to the low temperature (LT) ``electronic growth'' of metals on semiconductors. In particular, layer-by-layer growth of Pb(111) films has been reported for deposition on Ge(001) below 130 K. An extremely flat morphology is preserved throughout deposition from four up to a dozen of monolayers. These flat films are shown to be metastable and to reorganize into large clusters uncovering the first Pb layer, pseudomorphic to the substrate, already at room temperature. Indications of QSE induced structural variations of the growing films have been reported for Pb growth on Ge(001), where the apparent height of the Pb(111) monatomic step was shown to change in an oscillatory fashion by He atom scattering (HAS) during layer-by-layer growth. The extent of the structural QSE has been obtained by a comparison of the HAS data with X-ray diffraction (XRD) and reflectivity experiments. Whereas step height variations as large as 20 % have been measured by HAS reflectivity, the displacement of the atomic planes from their bulk position, as measured by XRD, has been found to mainly affect the topmost Pb layer, but with a lower extent, i.e. the QSE observed by HAS are mainly due to a perpendicular displacement of the topmost layer charge density. The effect of the variable surface relaxation on the surface vibration has been studied by inelastic HAS to measure the acoustic dispersion of the low energy phonons.
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Submitted 21 January, 2003; v1 submitted 15 November, 2002;
originally announced November 2002.
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Study of the isotropic contribution to the analysis of photoelectron diffraction experiments at the ALOISA beamline
Authors:
F. Bruno,
L. Floreano,
A. Verdini,
D. Cvetko,
R. Gotter,
A. Morgante,
M. Canepa,
S. Terreni
Abstract:
The angular distribution of the intensity in photoemission experiments is affected by electron diffraction patterns and by a smoothly varying ISO contribution originated by both intrumental details and physical properties of the samples. The origin of the various contributions to the ISO component has been identified since many years. Nonetheless in this work we present original developement of…
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The angular distribution of the intensity in photoemission experiments is affected by electron diffraction patterns and by a smoothly varying ISO contribution originated by both intrumental details and physical properties of the samples. The origin of the various contributions to the ISO component has been identified since many years. Nonetheless in this work we present original developement of the ED analysis, which arises from the evolution of instrumental performance, in terms of analyzers positioning and angular resolution, as well as collimation and size of X-ray beams in third generation synchrotron sources. The analytical treatement of the instrumental factors is presented in detail for the end station of the ALOISA beamline (Trieste Synchrotron), where a wide variety of scattering geometries is available for ED experiments. We present here the basic formulae and their application to experimental data taken on the Fe/Cu3Au(001) system in order to highlight the role of the various parameters included in the distribution function. A specific model for the surface illumination has been developed as well as the overlayer thickness and surface roughness have been considered.
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Submitted 18 April, 2002;
originally announced April 2002.
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From bi-layer to tri-layer Fe nanoislands on Cu3Au(001)
Authors:
A. Verdini,
L. Floreano,
F. Bruno,
D. Cvetko,
A. Morgante,
F. Bisio,
S. Terreni,
M. Canepa
Abstract:
Self assembly on suitably chosen substrates is a well exploited root to control the structure and morphology, hence magnetization, of metal films. In particular, the Cu3Au(001) surface has been recently singled out as a good template to grow high spin Fe phases, due to the close matching between the Cu3Au lattice constant (3.75 Angstrom) and the equilibrium lattice constant for fcc ferromagnetic…
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Self assembly on suitably chosen substrates is a well exploited root to control the structure and morphology, hence magnetization, of metal films. In particular, the Cu3Au(001) surface has been recently singled out as a good template to grow high spin Fe phases, due to the close matching between the Cu3Au lattice constant (3.75 Angstrom) and the equilibrium lattice constant for fcc ferromagnetic Fe (3.65 Angstrom). Growth proceeds almost layer by layer at room temperature, with a small amount of Au segregation in the early stage of deposition. Islands of 1-2 nm lateral size and double layer height are formed when 1 monolayer of Fe is deposited on Cu3Au(001) at low temperature. We used the PhotoElectron Diffraction technique to investigate the atomic structure and chemical composition of these nanoislands just after the deposition at 140 K and after annealing at 400 K. We show that only bi-layer islands are formed at low temperature, without any surface segregation. After annealing, the Fe atoms are re-aggregated to form mainly tri-layer islands. Surface segregation is shown to be inhibited also after the annealing process. The implications for the film magnetic properties and the growth model are discussed.
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Submitted 24 September, 2001;
originally announced September 2001.
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From pseudomorphic to orthomorphic growth of Fe films on Cu3Au(001)
Authors:
F. Bruno,
S. Terreni,
L. Floreano,
A. Cossaro,
D. Cvetko,
P. Luches,
L. Mattera,
A. Morgante,
R. Moroni,
M. Repetto,
A. Verdini,
M. Canepa
Abstract:
A few theoretical models predict Fe to display both ferromagnetic and antiferromagnetic phases, depending on the volume of the unit cell. A proper choice of the substrate allows the growth of thin Fe overlayers with structures different from the bcc bulk one. The Cu3Au(001) substrate is a suitable candidate for testing these magnetic properties since it has a lattice parameter (3.75 Angstroms) w…
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A few theoretical models predict Fe to display both ferromagnetic and antiferromagnetic phases, depending on the volume of the unit cell. A proper choice of the substrate allows the growth of thin Fe overlayers with structures different from the bcc bulk one. The Cu3Au(001) substrate is a suitable candidate for testing these magnetic properties since it has a lattice parameter (3.75 Angstroms) which lies closer to the ferromagnetic fcc Fe phase (3.66 Angstroms) than to the ferromagnetic bcc phase (4.07 Angstroms). We have investigated Fe films up to 40 Angstroms thickness by means of Grazing Incidence X-Ray Diffraction (GIXRD) and Photo/Auger--Electron Diffraction (ED). The combination of GIXRD and ED allows one to obtain quantitative information on the in--plane spacing "a" from the former technique, and the ratio between the vertical spacing "c" and "a", from the latter one. At low coverage the film grows pseudomorphic to the fcc substrate up to a limit thickness of 8 Angstroms. Above this limit the film is characterized by the coexistence of the pseudomorphic phase with another tetragonally strained phase. The latter phase is shown to fall on the epitaxial curve of tetragonally distorted fcc Fe phase. Finally, above 17 Angstroms the development of a body centered phase "alpha", whose unit cell is rotated of 45 deg. with respect to the substrate one, has been clearly observed. "alpha" is the dominating phase for film thickness higher than 25 Angstroms and its lattice constant evolves towards the orthomorphic phase in strict quantitative agreement with epitaxial curves calculated for the tetragonally distorted bcc iron phase.
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Submitted 2 May, 2002; v1 submitted 22 March, 2001;
originally announced March 2001.
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The order-disorder character of the (3x3) to (sqrt3 x sqrt3)R30° phase transition of Sn on Ge(111)
Authors:
L. Petaccia,
L. Floreano,
A. Goldoni,
D. Cvetko,
A. Morgante,
L. Grill,
A. Verdini,
G. Comelli,
G. Paolucci,
S. Modesti
Abstract:
Growing attention has been drawn in the past years to the α-phase
(1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (\sqrt3 x \sqrt3)R30° one. On the basis of scanning tunnelling microscopy experiments, this transition was claimed to be the manifestation of a surface charge density wave (SCDW), i.e. a periodic redist…
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Growing attention has been drawn in the past years to the α-phase
(1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (\sqrt3 x \sqrt3)R30° one. On the basis of scanning tunnelling microscopy experiments, this transition was claimed to be the manifestation of a surface charge density wave (SCDW), i.e. a periodic redistribution of charge, possibly accompanied by a periodic lattice distortion, which determines a change of the surface symmetry.
Recent He diffraction studies of the (3x3) long range order have shown the transition to be of the order-disorder type with a critical temperature Tc=220 K and belonging to the 3-state Potts' universality class. These findings clearly exclude an SCDW driven mechanism at 220 K, but they cannot exclude the occurence of a displacive transition at higher temperature. Here we present photoelectron diffraction data taken at 300 K and photoemission data taken up to 500 K (which is the maximum temperature where the (\sqrt3 x \sqrt3)R30° is stable) . From our analysis it is shown that the atomic structure of the Sn overlayer does not change throughout the transition up to 500 K. As a consequence the displacive hypothesis must be discarded in favour of a genuine order-disorder model.
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Submitted 19 October, 2001; v1 submitted 16 March, 2001;
originally announced March 2001.
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Determination of the (3x3)-Sn/Ge(111) structure by photoelectron diffraction
Authors:
L. Petaccia,
L. Floreano,
M. Benes,
D. Cvetko,
A. Goldoni,
L. Grill,
A. Morgante,
A. Verdini,
S. Modesti
Abstract:
At a coverage of about 1/3 monolayer, Sn deposited on Ge(111) below 550 forms a metastable (sqrt3 x sqrt3)R30 phase. This phase continuously and reversibly transforms into a (3x3) one, upon cooling below 200 K. The photoemission spectra of the Sn 4d electrons from the (3x3)-Sn/Ge(111) surface present two components which are attributed to inequivalent Sn atoms in T4 bonding sites. This structure…
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At a coverage of about 1/3 monolayer, Sn deposited on Ge(111) below 550 forms a metastable (sqrt3 x sqrt3)R30 phase. This phase continuously and reversibly transforms into a (3x3) one, upon cooling below 200 K. The photoemission spectra of the Sn 4d electrons from the (3x3)-Sn/Ge(111) surface present two components which are attributed to inequivalent Sn atoms in T4 bonding sites. This structure has been explored by photoelectron diffraction experiments performed at the ALOISA beamline of the Elettra storage ring in Trieste (Italy). The modulation of the intensities of the two Sn components, caused by the backscattering of the underneath Ge atoms, has been measured as a function of the emission angle at fixed kinetic energies and viceversa. The bond angle between Sn and its nearest neighbour atoms in the first Ge layer (Sn-Ge1) has been measured by taking polar scans along the main symmetry directions and it was found almost equivalent for the two components. The corresponding bond lengths are also quite similar, as obtained by studying the dependence on the photoelectron kinetic energy, while keeping the photon polarization and the collection direction parallel to the Sn-Ge1 bond orientation (bond emission). A clear difference between the two bonding sites is observed when studying the energy dependence at normal emission, where the sensitivity to the Sn height above the Ge atom in the second layer is enhanced. This vertical distance is found to be 0.3 Angstroms larger for one Sn atom out of the three contained in the lattice unit cell. The (3x3)-Sn/Ge(111) is thus characterized by a structure where the Sn atom and its three nearest neighbour Ge atoms form a rather rigid unit that presents a strong vertical distortion with respect to the underneath atom of the second Ge layer.
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Submitted 9 May, 2001; v1 submitted 11 December, 2000;
originally announced December 2000.
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The order-disorder transition of the (3x3)Sn/Ge(111) phase
Authors:
L. Floreano,
D. Cvetko,
G. Bavdek,
M. Benes,
A. Morgante
Abstract:
Growing attention has been drawn in the past years to the α-phase (1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (\sqrt3 x \sqrt3)R30 one. On the basis of scanning tunnelling microscopy experiments, this transition was claimed to be the manifestation of a surface charge density wave (SCDW), i.e. a periodic redistributio…
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Growing attention has been drawn in the past years to the α-phase (1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (\sqrt3 x \sqrt3)R30 one. On the basis of scanning tunnelling microscopy experiments, this transition was claimed to be the manifestation of a surface charge density wave (SCDW), i.e. a periodic redistribution of charge, possibly accompanied by a periodic lattice distortion, which determines a change of the surface symmetry. As further experiments with different techniques were being performed, increasing doubts were cast about the SCDW model. We have measured by He scattering the long range order of the 1/3 monolayer phase of Sn on the Ge(111) surface throughout the phase transition. The transition has been found of the order-disorder type with a critical temperature Tc=220 K. The expected 3-State Potts critical exponents are shown to be consistent with the observed power law dependence of the (3x3) order parameter and its correlation length close to Tc, thus excluding a charge density wave driven phase transition.
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Submitted 26 July, 2001; v1 submitted 14 November, 2000;
originally announced November 2000.
