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Magnetization relaxation and search for the magnetic gap in bulk-insulating V-doped (Bi, Sb)$_2$Te$_3$
Authors:
E. Golias,
E. Weschke,
T. Flanagan,
E. Schierle,
A. Richardella,
E. D. L. Rienks,
P. S. Mandal,
A. Varykhalov,
J. Sánchez-Barriga,
F. Radu,
N. Samarth,
O. Rader
Abstract:
V-doped (Bi,Sb)$_2$Te$_3$ has a ten times higher magnetic coercivity than its Cr-doped counterpart and therefore is believed to be a superior system for the quantum anomalous Hall effect (QAHE). The QAHE requires the opening of a magnetic band gap at the Dirac point. We do not find this gap by angle-resolved photoelectron spectroscopy down to 1 K. By x-ray magnetic circular dichroism (XMCD) we dir…
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V-doped (Bi,Sb)$_2$Te$_3$ has a ten times higher magnetic coercivity than its Cr-doped counterpart and therefore is believed to be a superior system for the quantum anomalous Hall effect (QAHE). The QAHE requires the opening of a magnetic band gap at the Dirac point. We do not find this gap by angle-resolved photoelectron spectroscopy down to 1 K. By x-ray magnetic circular dichroism (XMCD) we directly probe the magnetism at the V site and in zerofield. Hysteresis curves of the XMCD signal show a strong dependence of the coercivity on the ramping velocity of the magnetic field. The XMCD signal decays on a time scale of minutes which we conclude contributes to the absence of a detectable magnetic gap at the Dirac point.
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Submitted 14 October, 2020;
originally announced October 2020.
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Helicity dependent photocurrent in electrically gated (Bi,Sb)_2Te_3 thin films
Authors:
Yu Pan,
Qing-Ze Wang,
Andrew L. Yeats,
Timothy Pillsbury,
Thomas C. Flanagan,
Anthony Richardella,
Haijun Zhang,
David D. Awschalom,
Chao-Xing Liu,
Nitin Samarth
Abstract:
Circularly polarized photons are known to generate a directional helicity-dependent photocurrent in three-dimensional topological insulators at room temperature. Surprisingly, the phenomenon is readily observed at photon energies that excite electrons to states far above the spin-momentum locked Dirac cone and the underlying mechanism for the helicity-dependent photocurrent is still not understood…
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Circularly polarized photons are known to generate a directional helicity-dependent photocurrent in three-dimensional topological insulators at room temperature. Surprisingly, the phenomenon is readily observed at photon energies that excite electrons to states far above the spin-momentum locked Dirac cone and the underlying mechanism for the helicity-dependent photocurrent is still not understood. We resolve the puzzle through a comprehensive study of the helicity-dependent photocurrent in (Bi,Sb)_2Te_3 thin films as a function of the incidence angle of the optical excitation, its wavelength, and the gate-tuned chemical potential. Our observations allow us to unambiguously identify the circular photo-galvanic effect as the dominant mechanism for the helicity-dependent photocurrent. Additionally, we use an analytical calculation to relate the directional nature of the photocurrent to asymmetric optical transitions between the topological surface states and bulk bands. The insights we obtain are important for engineering opto-spintronic devices that rely on optical steering of spin and charge currents.
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Submitted 13 June, 2017;
originally announced June 2017.
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Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films
Authors:
Joon Sue Lee,
Anthony Richardella,
David W. Rench,
Robert D. Fraleigh,
Thomas C. Flanagan,
Julie A. Borchers,
Jing Tao,
Nitin Samarth
Abstract:
We describe a detailed study of the structural, magnetic, and magneto-transport properties of single-crystal, n-type, Mn-doped Bi2Te3 thin films grown by molecular beam epitaxy. With increasing Mn concentration, the crystal structure changes from the tetradymite structure of the Bi2Te3 parent crystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m(Bi2)n homologous series. Magnetizat…
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We describe a detailed study of the structural, magnetic, and magneto-transport properties of single-crystal, n-type, Mn-doped Bi2Te3 thin films grown by molecular beam epitaxy. With increasing Mn concentration, the crystal structure changes from the tetradymite structure of the Bi2Te3 parent crystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m(Bi2)n homologous series. Magnetization measurements reveal the onset of ferromagnetism with a Curie temperature in the range 13.8 K - 17 K in films with 2 % - 10 % Mn concentration. Magnetization hysteresis loops reveal that the magnetic easy axis is along the c-axis of the crystal (perpendicular to the plane). Polarized neutron reflectivity measurements of a 68 nm-thick sample show that the magnetization is uniform through the film. The presence of ferromagnetism is also manifest in a strong anomalous Hall effect and a hysteretic magnetoresistance arising from domain wall scattering. Ordinary Hall effect measurements show that the carrier density is n-type, increases with Mn doping, and is high enough (> 2.8 x 10^{13} cm^{-2}) to place the chemical potential in the conduction band. Thus, the observed ferromagnetism is likely associated with both bulk and surface states. Surprisingly, the Curie temperature does not show any clear dependence on the carrier density but does increase with Mn concentration. Our results suggest that the ferromagnetism probed in these Mn-doped Bi2Te3 films is not mediated by carriers in the conduction band or in an impurity band.
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Submitted 22 February, 2014;
originally announced February 2014.
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Growth and Characterization of Hybrid Insulating Ferromagnet-Topological Insulator Heterostructure Devices
Authors:
A. Kandala,
A. Richardella,
D. W. Rench,
D. M. Zhang,
T. C. Flanagan,
N. Samarth
Abstract:
We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enables direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer re…
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We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enables direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer results in suppression of weak anti-localization at the top surface.
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Submitted 16 September, 2013; v1 submitted 5 December, 2012;
originally announced December 2012.
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Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator
Authors:
Duming Zhang,
Anthony Richardella,
David W. Rench,
Su-Yang Xu,
Abhinav Kandala,
Thomas C. Flanagan,
Haim Beidenkopf,
Andrew L. Yeats,
Bob B. Buckley,
Paul V. Klimov,
David D. Awschalom,
Ali Yazdani,
Peter Schiffer,
M. Zahid Hasan,
Nitin Samarth
Abstract:
The breaking of time-reversal symmetry by ferromagnetism is predicted to yield profound changes to the electronic surface states of a topological insulator. Here, we report on a concerted set of structural, magnetic, electrical and spectroscopic measurements of \MBS thin films wherein photoemission and x-ray magnetic circular dichroism studies have recently shown surface ferromagnetism in the temp…
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The breaking of time-reversal symmetry by ferromagnetism is predicted to yield profound changes to the electronic surface states of a topological insulator. Here, we report on a concerted set of structural, magnetic, electrical and spectroscopic measurements of \MBS thin films wherein photoemission and x-ray magnetic circular dichroism studies have recently shown surface ferromagnetism in the temperature range 15 K $\leq T \leq 100$ K, accompanied by a suppressed density of surface states at the Dirac point. Secondary ion mass spectroscopy and scanning tunneling microscopy reveal an inhomogeneous distribution of Mn atoms, with a tendency to segregate towards the sample surface. Magnetometry and anisotropic magnetoresistance measurements are insensitive to the high temperature ferromagnetism seen in surface studies, revealing instead a low temperature ferromagnetic phase at $T \lesssim 5$ K. The absence of both a magneto-optical Kerr effect and anomalous Hall effect suggests that this low temperature ferromagnetism is unlikely to be a homogeneous bulk phase but likely originates in nanoscale near-surface regions of the bulk where magnetic atoms segregate during sample growth. Although the samples are not ideal, with both bulk and surface contributions to electron transport, we measure a magnetoconductance whose behavior is qualitatively consistent with predictions that the opening of a gap in the Dirac spectrum drives quantum corrections to the conductance in topological insulators from the symplectic to the orthogonal class.
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Submitted 7 November, 2012; v1 submitted 13 June, 2012;
originally announced June 2012.
