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Anderson mobility edge as a percolation transition
Authors:
Marcel Filoche,
Pierre Pelletier,
Dominique Delande,
Svitlana Mayboroda
Abstract:
The location of the mobility edge is a long standing problem in Anderson localization. In this paper, we show that the effective confining potential introduced in the localization landscape (LL) theory predicts the onset of delocalization in 3D tight-binding models, in a large part of the energy-disorder diagram. Near the edge of the spectrum, the eigenstates are confined inside the basins of the…
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The location of the mobility edge is a long standing problem in Anderson localization. In this paper, we show that the effective confining potential introduced in the localization landscape (LL) theory predicts the onset of delocalization in 3D tight-binding models, in a large part of the energy-disorder diagram. Near the edge of the spectrum, the eigenstates are confined inside the basins of the LL-based potential. The delocalization transition corresponds to the progressive merging of these basins resulting in the percolation of this classically-allowed region throughout the system. This approach, shown to be valid both in the cases of uniform and binary disorders despite their very different phase diagrams, allows us to reinterpret the Anderson transition in the tight-binding model: the mobility edge appears to be composed of two parts, one being understood as a percolation transition.
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Submitted 23 May, 2024; v1 submitted 7 September, 2023;
originally announced September 2023.
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Realization-dependent model of hopping transport in disordered media
Authors:
Abel Thayil,
Marcel Filoche
Abstract:
At low injection or low temperatures, electron transport in disordered semiconductors is dominated by phonon-assisted hopping between localized states. A very popular approach to this hopping transport is the Miller-Abrahams model that requires a set of empirical parameters to define the hopping rates and the preferential paths between the states. We present here a transport model based on the loc…
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At low injection or low temperatures, electron transport in disordered semiconductors is dominated by phonon-assisted hopping between localized states. A very popular approach to this hopping transport is the Miller-Abrahams model that requires a set of empirical parameters to define the hopping rates and the preferential paths between the states. We present here a transport model based on the localization landscape (LL) theory in which the location of the localized states, their energies, and the coupling between them are computed for any specific realization, accounting for its particular geometry and structure. This model unveils the transport network followed by the charge carriers that essentially consists in the geodesics of a metric deduced from the LL. The hopping rates and mobility are computed on a paradigmatic example of disordered semiconductor, and compared with the prediction from the actual solution of the Schrödinger equation. We explore the temperature-dependency for various disorder strengths and demonstrate the applicability of the LL theory in efficiently modeling hopping transport in disordered systems.
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Submitted 15 June, 2023;
originally announced June 2023.
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The electronic disorder landscape of mixed halide perovskites
Authors:
Yun Liu,
Jean-Philippe Banon,
Kyle Frohna,
Yu-Hsien Chiang,
Ganbaatar Tumen-Ulzii,
Samuel D. Stranks,
Marcel Filoche,
Richard H. Friend
Abstract:
Bandgap tunability of lead mixed-halide perovskites makes them promising candidates for various applications in optoelectronics since they exhibit sharp optical absorption onsets despite the presence of disorder from halide alloying. Here we use localization landscape theory to reveal that the static disorder due to compositional alloying for iodide:bromide perovskite contributes at most 3 meV to…
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Bandgap tunability of lead mixed-halide perovskites makes them promising candidates for various applications in optoelectronics since they exhibit sharp optical absorption onsets despite the presence of disorder from halide alloying. Here we use localization landscape theory to reveal that the static disorder due to compositional alloying for iodide:bromide perovskite contributes at most 3 meV to the Urbach energy. Our modelling reveals that the reason for this small contribution is due to the small effective masses in perovskites, resulting in a natural length scale of around 20nm for the "effective confining potential" for electrons and holes, with short range potential fluctuations smoothed out. The increase in Urbach energy across the compositional range agrees well with our optical absorption measurements. We model systems of sizes up to 80 nm in three dimensions, allowing us to explore halide segregation, accurately reproducing the experimentally observed absorption spectra and demonstrating the scope of our method to model electronic structures on large length scales. Our results suggest that we should look beyond static contribution and focus on the dynamic temperature dependent contribution to the Urbach energy.
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Submitted 16 October, 2022;
originally announced October 2022.
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Low and high-energy localization landscapes for tight-binding Hamiltonians in 2D lattices
Authors:
Luis A. Razo-López,
Geoffroy J. Aubry,
Marcel Filoche,
Fabrice Mortessagne
Abstract:
Localization of electronic wave functions in modern two-dimensional (2D) materials such as graphene can impact drastically their transport and magnetic properties. The recent localization landscape (LL) theory has brought many tools and theoretical results to understand such localization phenomena in the continuous setting, but with very few extensions so far to the discrete realm or to tight-bind…
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Localization of electronic wave functions in modern two-dimensional (2D) materials such as graphene can impact drastically their transport and magnetic properties. The recent localization landscape (LL) theory has brought many tools and theoretical results to understand such localization phenomena in the continuous setting, but with very few extensions so far to the discrete realm or to tight-binding Hamiltonians. In this paper, we show how this approach can be extended to almost all known 2D~lattices, and propose a systematic way of designing LL even for higher dimension. We demonstrate in detail how this LL theory works and predicts accurately not only the location, but also the energies of localized eigenfunctions in the low and high energy regimes for the honeycomb and hexagonal lattices, making it a highly promising tool for investigating the role of disorder in these materials.
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Submitted 3 October, 2022;
originally announced October 2022.
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Localization landscape for interacting Bose gases in one-dimensional speckle potentials
Authors:
Filippo Stellin,
Marcel Filoche,
Frédéric Dias
Abstract:
While the properties and the shape of the ground state of a gas of ultracold bosons are well understood in harmonic potentials, they remain for a large part unknown in the case of random potentials. Here, we use the localization-landscape (LL) theory to study the properties of the solutions to the Gross-Pitaevskii equation (GPE) in one-dimensional (1D) speckle potentials. In the cases of attractiv…
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While the properties and the shape of the ground state of a gas of ultracold bosons are well understood in harmonic potentials, they remain for a large part unknown in the case of random potentials. Here, we use the localization-landscape (LL) theory to study the properties of the solutions to the Gross-Pitaevskii equation (GPE) in one-dimensional (1D) speckle potentials. In the cases of attractive interactions, we find that the LL allows one to predict the position of the localization center of the ground state (GS) of the GPE. For weakly repulsive interactions, we point out that the GS of the quasi-1D GPE can be understood as a superposition of a finite number of single-particle states, which can be computed by exploiting the LL. For intermediate repulsive interactions, we introduce a Thomas-Fermi-like approach for the GS which holds in the smoothing regime, well beyond the usual approximation involving the original potential. Moreover, we show that, in the Lifshitz glass regime, the particle density and the chemical potential can be well estimated by the LL. Our approach can be applied to any positive-valued random potential endowed with finite-range correlations and can be generalized to higher-dimensional systems.
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Submitted 24 February, 2023; v1 submitted 21 August, 2022;
originally announced August 2022.
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Wigner-Weyl description of light absorption in disordered semiconductor alloys using the localization landscape theory
Authors:
Jean-Philippe Banon,
Pierre Pelletier,
Claude Weisbuch,
Svitlana Mayboroda,
Marcel Filoche
Abstract:
The presence of disorder in semiconductors can dramatically change their physical properties. Yet, models faithfully accounting for it are still scarce and computationally inefficient. We present a mathematical and computational model able to simulate the optoelectronic response of semiconductor alloys of several tens of nanometer sidelength, while at the same time accounting for the quantum local…
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The presence of disorder in semiconductors can dramatically change their physical properties. Yet, models faithfully accounting for it are still scarce and computationally inefficient. We present a mathematical and computational model able to simulate the optoelectronic response of semiconductor alloys of several tens of nanometer sidelength, while at the same time accounting for the quantum localization effects induced by the compositional disorder at the nano-scale. The model is based on a Wigner-Weyl analysis of the structure of electron and hole eigenstates in phase space made possible by the localization landscape theory. After validation against eigenstates-based computations in 1D and 2D, our model is applied to the computation of light absorption in 3D InGaN alloys of different compositions. We obtain the detailed structures of the absorption tail below the average bandgap and the Urbach energies of all simulated compositions. Moreover, the Wigner-Weyl formalism allows us to define and compute 3D maps of the effective locally absorbed power at all frequencies. Finally the proposed approach opens the way to generalize this method to all energy-exchange processes such as radiative and non-radiative recombination in realistic devices.
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Submitted 2 April, 2022; v1 submitted 13 December, 2021;
originally announced December 2021.
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Piezoresistance in defect-engineered silicon
Authors:
H. Li,
A. Thayil,
C. T. K. Lew,
M. Filoche,
B. C. Johnson,
J. C. McCallum,
S. Arscott,
A. C. H. Rowe
Abstract:
The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage ($V_t$) corresponding to the onset of a space-charge-limited hole current, the longitudinal $\langle 110 \rangle$ PZR $π$-coefficient is $π\approx 65 \times 10^{-11}$~Pa…
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The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage ($V_t$) corresponding to the onset of a space-charge-limited hole current, the longitudinal $\langle 110 \rangle$ PZR $π$-coefficient is $π\approx 65 \times 10^{-11}$~Pa$^{-1}$, similar to the value obtained in charge-neutral, p-type silicon. Below $V_t$, the mechanical stress dependence of the Shockley-Read-Hall (SRH) recombination parameters, specifically the divacancy trap energy $E_T$ which is estimated to vary by $\approx 30$~$μ$V/MPa, yields $π\approx -25 \times 10^{-11}$~Pa$^{-1}$. The combination of space-charge-limited transport and defect engineering which significantly reduces SRH recombination lifetimes makes this work directly relevant to discussions of giant or anomalous PZR at small strains in nano-silicon whose characteristic dimension is larger than a few nanometers. In this limit the reduced electrostatic dimensionality lowers $V_t$ and amplifies space-charge-limited currents and efficient SRH recombination occurs via surface defects. The results reinforce the growing evidence that in steady state, electro-mechanically active defects can result in anomalous, but not giant, PZR.
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Submitted 1 January, 2021; v1 submitted 11 August, 2020;
originally announced August 2020.
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Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
Authors:
W. Hahn,
J. -M. Lentali,
P. Polovodov,
N. Young,
S. Nakamura,
J. S. Speck,
C. Weisbuch,
M. Filoche,
Y-R. Wu,
M. Piccardo,
F. Maroun,
L. Martinelli,
Y. Lassailly,
J. Peretti
Abstract:
We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanom…
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We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. The energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electro-luminescence spectra of InGaN/GaN quantum well structures.
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Submitted 23 May, 2018;
originally announced May 2018.
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Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
Authors:
Chi-Kang Li,
Marco Piccardo,
Li-Shuo Lu,
Svitlana Mayboroda,
Lucio Martinelli,
Jacques Peretti,
James S. Speck,
Claude Weisbuch,
Marcel Filoche,
Yuh-Renn Wu
Abstract:
This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition they lead to percolative transport…
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This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition they lead to percolative transport through paths of minimal energy in the 2D landscape of disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schrödinger equation resolution. The theory also provides a good approximation to the density of states for the disordered system over the full range of energies required to account for transport at room-temperature. The current-voltage characteristics modeled by 3-D simulation of a full nitride-based light-emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.
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Submitted 18 April, 2017;
originally announced April 2017.
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Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers
Authors:
Marco Piccardo,
Chi-Kang Li,
Yuh-Renn Wu,
James S. Speck,
Bastien Bonef,
Robert M. Farrell,
Marcel Filoche,
Lucio Martinelli,
Jacques Peretti,
Claude Weisbuch
Abstract:
Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased photocurrent spectroscopy is shown to be characteristic of the ternary alloy disorder. The broadening of the absorption edge observed for quantum wells emitting from violet to green (indium content ranging from 0 to 28\%)…
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Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased photocurrent spectroscopy is shown to be characteristic of the ternary alloy disorder. The broadening of the absorption edge observed for quantum wells emitting from violet to green (indium content ranging from 0 to 28\%) corresponds to a typical Urbach energy of 20~meV. A 3D absorption model is developed based on a recent theory of disorder-induced localization which provides the effective potential seen by the localized carriers without having to resort to the solution of the Schrödinger equation in a disordered potential. This model incorporating compositional disorder accounts well for the experimental broadening of the Urbach tail of the absorption edge. For energies below the Urbach tail of the InGaN quantum wells, type-II well-to-barrier transitions are observed and modeled. This contribution to the below bandgap absorption is particularly efficient in near-UV emitting quantum wells. When reverse biasing the device, the well-to-barrier below bandgap absorption exhibits a red shift, while the Urbach tail corresponding to the absorption within the quantum wells is blue shifted, due to the partial compensation of the internal piezoelectric fields by the external bias. The good agreement between the measured Urbach tail and its modeling by the new localization theory demonstrates the applicability of the latter to compositional disorder effects in nitride semiconductors.
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Submitted 18 April, 2017;
originally announced April 2017.
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Localization landscape theory of disorder in semiconductors I: Theory and modeling
Authors:
Marcel Filoche,
Marco Piccardo,
Yuh-Renn Wu,
Chi-Kang Li,
Claude Weisbuch,
Svitlana Mayboroda
Abstract:
We present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on the recent development of a mathematical theory of quantum localization which introduces for each type of carrier a spatial function called \emph{localization landscape}. These landscapes allow us to predict the localizati…
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We present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on the recent development of a mathematical theory of quantum localization which introduces for each type of carrier a spatial function called \emph{localization landscape}. These landscapes allow us to predict the localization regions of electron and hole quantum states, their corresponding energies, and the local densities of states. We show how the various outputs of these landscapes can be directly implemented into a drift-diffusion model of carrier transport and into the calculation of absorption/emission transitions. This creates a new computational model which accounts for disorder localization effects while also capturing two major effects of quantum mechanics, namely the reduction of barrier height (tunneling effect), and the raising of energy ground states (quantum confinement effect), without having to solve the Schrödinger equation. Finally, this model is applied to several one-dimensional structures such as single quantum wells, ordered and disordered superlattices, or multi-quantum wells, where comparisons with exact Schrödinger calculations demonstrate the excellent accuracy of the approximation provided by the landscape theory.
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Submitted 18 April, 2017;
originally announced April 2017.
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One single static measurement predicts wave localization in complex structures
Authors:
Gautier Lefebvre,
Alexane Gondel,
Marc Dubois,
Michael Atlan,
Florian Feppon,
Aimé Labbé,
Camille Gillot,
Alix Garelli,
Maxence Ernoult,
Svitlana Mayboroda,
Marcel Filoche,
Patrick Sebbah
Abstract:
A recent theoretical breakthrough has brought a new tool, called \emph{localization landscape}, to predict the localization regions of vibration modes in complex or disordered systems. Here, we report on the first experiment which measures the localization landscape and demonstrates its predictive power. Holographic measurement of the static deformation under uniform load of a thin plate with comp…
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A recent theoretical breakthrough has brought a new tool, called \emph{localization landscape}, to predict the localization regions of vibration modes in complex or disordered systems. Here, we report on the first experiment which measures the localization landscape and demonstrates its predictive power. Holographic measurement of the static deformation under uniform load of a thin plate with complex geometry provides direct access to the landscape function. When put in vibration, this system shows modes precisely confined within the sub-regions delineated by the landscape function. Also the maxima of this function match the measured eigenfrequencies, while the minima of the valley network gives the frequencies at which modes become extended. This approach fully characterizes the low frequency spectrum of a complex structure from a single static measurement. It paves the way to the control and engineering of eigenmodes in any vibratory system, especially where a structural or microscopic description is not accessible.
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Submitted 11 April, 2016;
originally announced April 2016.
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Effective confining potential of quantum states in disordered media
Authors:
Douglas N. Arnold,
Guy David,
David Jerison,
Svitlana Mayboroda,
Marcel Filoche
Abstract:
The amplitude of localized quantum states in random or disordered media may exhibit long range exponential decay. We present here a theory that unveils the existence of an effective potential which finely governs the confinement of these states. In this picture, the boundaries of the localization subregions for low energy eigenfunctions correspond to the barriers of this effective potential, and t…
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The amplitude of localized quantum states in random or disordered media may exhibit long range exponential decay. We present here a theory that unveils the existence of an effective potential which finely governs the confinement of these states. In this picture, the boundaries of the localization subregions for low energy eigenfunctions correspond to the barriers of this effective potential, and the long range exponential decay characteristic of Anderson localization is explained as the consequence of multiple tunneling in the dense network of barriers created by this effective potential. Finally, we show that the Weyl's formula based on this potential turns out to be a remarkable approximation of the density of states for a large variety of one-dimensional systems, periodic or random.
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Submitted 2 February, 2016; v1 submitted 11 May, 2015;
originally announced May 2015.
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Dual hidden landscapes in Anderson localization on discrete lattices
Authors:
Marcelo Leite Lyra,
Svitlana Mayboroda,
Marcel Filoche
Abstract:
The localization subregions of stationary waves in continuous disordered media have been recently demonstrated to be governed by a hidden landscape that is the solution of a Dirichlet problem expressed with the wave operator. In this theory, the strength of Anderson localization confinement is determined by this landscape, and continuously decreases as the energy increases. However, this picture h…
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The localization subregions of stationary waves in continuous disordered media have been recently demonstrated to be governed by a hidden landscape that is the solution of a Dirichlet problem expressed with the wave operator. In this theory, the strength of Anderson localization confinement is determined by this landscape, and continuously decreases as the energy increases. However, this picture has to be changed in discrete lattices in which the eigenmodes close to the edge of the first Brillouin zone are as localized as the low energy ones. Here we show that in a 1D discrete lattice, the localization of low and high energy modes is governed by two different landscapes, the high energy landscape being the solution of a dual Dirichlet problem deduced from the low energy one using the symmetries of the Hamiltonian. We illustrate this feature using the one-dimensional tight-binding Hamiltonian with random on-site potentials as a prototype model. Moreover we show that, besides unveiling the subregions of Anderson localization, these dual landscapes also provide an accurate overal estimate of the localization length over the energy spectrum, especially in the weak disorder regime.
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Submitted 9 October, 2014; v1 submitted 8 October, 2014;
originally announced October 2014.
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The Hidden Landscape of Localization
Authors:
Marcel Filoche,
Svitlana Mayboroda
Abstract:
Wave localization occurs in all types of vibrating systems, in acoustics, mechanics, optics, or quantum physics. It arises either in systems of irregular geometry (weak localization) or in disordered systems (Anderson localization). We present here a general theory that explains how the system geometry and the wave operator interplay to give rise to a "landscape" that splits the system into weakly…
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Wave localization occurs in all types of vibrating systems, in acoustics, mechanics, optics, or quantum physics. It arises either in systems of irregular geometry (weak localization) or in disordered systems (Anderson localization). We present here a general theory that explains how the system geometry and the wave operator interplay to give rise to a "landscape" that splits the system into weakly coupled subregions, and how these regions shape the spatial distribution of the vibrational eigenmodes. This theory holds in any dimension, for any domain shape, and for all operators deriving from an energy form. It encompasses both weak and Anderson localizations in the same mathematical frame and shows, in particular, that Anderson localization can be understood as a special case of weak localization in a very rough landscape.
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Submitted 2 July, 2011;
originally announced July 2011.
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Optimal branching asymmetry of hydrodynamic pulsatile trees
Authors:
Magali Florens,
Bernard Sapoval,
Marcel Filoche
Abstract:
Most of the studies on optimal transport are done for steady state regime conditions. Yet, there exists numerous examples in living systems where supply tree networks have to deliver products in a limited time due to the pulsatile character of the flow. This is the case for mammals respiration for which air has to reach the gas exchange units before the start of expiration. We report here that int…
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Most of the studies on optimal transport are done for steady state regime conditions. Yet, there exists numerous examples in living systems where supply tree networks have to deliver products in a limited time due to the pulsatile character of the flow. This is the case for mammals respiration for which air has to reach the gas exchange units before the start of expiration. We report here that introducing a systematic branching asymmetry allows to reduce the average delivery time of the products. It simultaneously increases its robustness against the unevitable variability of sizes related to morphogenesis. We then apply this approach to the human tracheobronchial tree. We show that in this case all extremities are supplied with fresh air, provided that the asymmetry is smaller than a critical threshold which happens to fit with the asymmetry measured in the human lung. This could indicate that the structure is adjusted at the maximum asymmetry level that allows to feed all terminal units with fresh air.
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Submitted 11 May, 2010;
originally announced May 2010.
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Screening effects in flow through rough channels
Authors:
J. S. Andrade Jr.,
A. D. Araújo,
M. Filoche,
B. Sapoval
Abstract:
A surprising similarity is found between the distribution of hydrodynamic stress on the wall of an irregular channel and the distribution of flux from a purely Laplacian field on the same geometry. This finding is a direct outcome from numerical simulations of the Navier-Stokes equations for flow at low Reynolds numbers in two-dimensional channels with rough walls presenting either deterministic…
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A surprising similarity is found between the distribution of hydrodynamic stress on the wall of an irregular channel and the distribution of flux from a purely Laplacian field on the same geometry. This finding is a direct outcome from numerical simulations of the Navier-Stokes equations for flow at low Reynolds numbers in two-dimensional channels with rough walls presenting either deterministic or random self-similar geometries. For high Reynolds numbers, when inertial effects become relevant, the distribution of wall stresses on deterministic and random fractal rough channels becomes substantially dependent on the microscopic details of the walls geometry. In addition, we find that, while the permeability of the random channel follows the usual decrease with Reynolds, our results indicate an unexpected permeability increase for the deterministic case, i.e., ``the rougher the better''. We show that this complex behavior is closely related with the presence and relative intensity of recirculation zones in the reentrant regions of the rough channel.
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Submitted 31 May, 2006;
originally announced May 2006.
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Interplay between geometry and flow distribution in an airway tree
Authors:
B. Mauroy,
M. Filoche,
J. S. Andrade Jr,
B. Sapoval
Abstract:
Uniform fluid flow distribution in a symmetric volume can be realized through a symmetric branched tree. It is shown here, however, that the flow partitioning can be highly sensitive to deviations from exact symmetry if inertial effects are present. This is found by direct numerical simulation of the Navier-Stokes equations in a 3D tree geometry. The flow asymmetry is quantified and found to dep…
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Uniform fluid flow distribution in a symmetric volume can be realized through a symmetric branched tree. It is shown here, however, that the flow partitioning can be highly sensitive to deviations from exact symmetry if inertial effects are present. This is found by direct numerical simulation of the Navier-Stokes equations in a 3D tree geometry. The flow asymmetry is quantified and found to depend on the Reynolds number. Moreover, for a given Reynolds number, we show that the flow distribution depends on the aspect ratio of the branching elements as well as their angular arrangement. Our results indicate that physiological variability should be severely restricted in order to ensure uniform fluid distribution in a tree. This study suggests that any non-uniformity in the air flow distribution in human lungs should be influenced by the respiratory conditions, rest or hard exercise.
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Submitted 15 April, 2003; v1 submitted 14 February, 2003;
originally announced February 2003.
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Analytical approximation for reaction-diffusion processes in rough pores
Authors:
J. S. Andrade Jr.,
M. Filoche,
B. Sapoval
Abstract:
The concept of an active zone in Laplacian transport is used to obtain an analytical approximation for the reactive effectiveness of a pore with an arbitrary rough geometry. We show that this approximation is in very good agreement with direct numerical simulations performed over a wide range of diffusion-reaction conditions (i.e., with or without screening effects). In particular, we find that…
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The concept of an active zone in Laplacian transport is used to obtain an analytical approximation for the reactive effectiveness of a pore with an arbitrary rough geometry. We show that this approximation is in very good agreement with direct numerical simulations performed over a wide range of diffusion-reaction conditions (i.e., with or without screening effects). In particular, we find that in most practical situations, the effect of roughness is to increase the intrinsic reaction rate by a geometrical factor, namely, the ratio between the real and the apparent surface area. We show that this simple geometrical information is sufficient to characterize the reactive effectiveness of a pore, in spite of the complex morphological features it might possess.
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Submitted 14 December, 2000;
originally announced December 2000.
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Diffusion-Reorganized Aggregates: Attractors in Diffusion Processes?
Authors:
M. Filoche,
B. Sapoval
Abstract:
A process based on particle evaporation, diffusion and redeposition is applied iteratively to a two-dimensional object of arbitrary shape. The evolution spontaneously transforms the object morphology, converging to branched structures. Independently of initial geometry, the structures found after long time present fractal geometry with a fractal dimension around 1.75. The final morphology, which…
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A process based on particle evaporation, diffusion and redeposition is applied iteratively to a two-dimensional object of arbitrary shape. The evolution spontaneously transforms the object morphology, converging to branched structures. Independently of initial geometry, the structures found after long time present fractal geometry with a fractal dimension around 1.75. The final morphology, which constantly evolves in time, can be considered as the dynamic attractor of this evaporation-diffusion-redeposition operator. The ensemble of these fractal shapes can be considered to be the {\em dynamical equilibrium} geometry of a diffusion controlled self-transformation process.
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Submitted 27 October, 2000;
originally announced October 2000.
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Transfer across Random versus Deterministic Fractal Interfaces
Authors:
M. Filoche,
B. Sapoval
Abstract:
A numerical study of the transfer across random fractal surfaces shows that their responses are very close to the response of deterministic model geometries with the same fractal dimension. The simulations of several interfaces with prefractal geometries show that, within very good approximation, the flux depends only on a few characteristic features of the interface geometry: the lower and high…
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A numerical study of the transfer across random fractal surfaces shows that their responses are very close to the response of deterministic model geometries with the same fractal dimension. The simulations of several interfaces with prefractal geometries show that, within very good approximation, the flux depends only on a few characteristic features of the interface geometry: the lower and higher cut-offs and the fractal dimension. Although the active zones are different for different geometries, the electrode reponses are very nearly the same. In that sense, the fractal dimension is the essential "universal" exponent which determines the net transfer.
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Submitted 19 January, 2000;
originally announced January 2000.
