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Trilinear coupling and toroidicity in multiferroics
Authors:
Andrea Urru,
Alessio Filippetti,
Jorge Íñiguez-Gonzàlez,
Vincenzo Fiorentini
Abstract:
Magnetoelectric responses are related in general to magnetic multipoles, and in particular the off-diagonal linear response is proportional to the toroidization order parameter. In multiferroics with three order parameters (polarization, magnetization, and toroidization), such response turns out to be also proportional to the trilinear coupling between the order parameters. Here we explore this sc…
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Magnetoelectric responses are related in general to magnetic multipoles, and in particular the off-diagonal linear response is proportional to the toroidization order parameter. In multiferroics with three order parameters (polarization, magnetization, and toroidization), such response turns out to be also proportional to the trilinear coupling between the order parameters. Here we explore this scenario, discussing the effects of such trilinear coupling within a Landau theory framework, and using ab initio calculations to discuss a specific model system for this effect, namely the recently predicted three-order-parameter multiferroic metal Bi$_5$Mn$_5$O$_{17}$.
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Submitted 31 March, 2025; v1 submitted 14 March, 2025;
originally announced March 2025.
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Highly efficient field-free switching by orbital Hall torque in a MoS2-based device operating at room temperature
Authors:
Antonio Bianco,
Michele Ceccardi,
Raimondo Cecchini,
Daniele Marre',
Chanchal K. Barman,
Fabio Bernardini,
Alessio Filippetti,
Federico Caglieris,
Ilaria Pallecchi
Abstract:
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In this work, we propose a novel memory device based on the semiconducting two-dimensional centrosymmetric transition metal dichalcogenide (TMD) MoS2, that operat…
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Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In this work, we propose a novel memory device based on the semiconducting two-dimensional centrosymmetric transition metal dichalcogenide (TMD) MoS2, that operates as a SOT device in the writing process and a spin valve in the reading process. We demonstrate that stable voltage states at room temperature can be deterministically controlled by a switching current density as low as 3.2x10^4 A/cm^2 even in zero field, owed to a tilted geometry and a differential voltage architecture. An applied field of 50-100 Oe can be used as a characterizing control parameter for the state switching. Ab initio calculations of spin Hall effect (SHE) and orbital Hall effect (OHE) point to the latter as the most likely responsible for the generation of the SOT in the magnetic electrode. The large value of OHC in bulk MoS2 makes our device competitive in terms of energetic efficiency and could be integrated in TMD heterostructures to design memory devices with multiple magnetization states for non-Boolean computation.
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Submitted 10 April, 2025; v1 submitted 12 February, 2025;
originally announced February 2025.
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Strain-induced magnetization control in an oxide multiferroic heterostructure
Authors:
Federico Motti,
Giovanni Vinai,
Aleksandr Petrov,
Bruce A. Davidson,
Benoit Gobaut,
Alessio Filippetti,
Giorgio Rossi,
Giancarlo Panaccione,
Piero Torelli1
Abstract:
Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nano-electronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence, and supporting DFT analysis, of a transition in La0.65Sr0.35MnO3 (LSMO) thin film to a stable ferromagnetic phase, that is induced by the structural and strain…
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Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nano-electronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence, and supporting DFT analysis, of a transition in La0.65Sr0.35MnO3 (LSMO) thin film to a stable ferromagnetic phase, that is induced by the structural and strain properties of the ferroelectric BaTiO3 (BTO) substrate, which can be modified by applying external electric fields. X-ray Magnetic Circular Dichroism (XMCD) measurements on Mn L edges with a synchrotron radiation show, in fact two magnetic transitions as a function of temperature that correspond to structural changes of the BTO substrate. We also show that ferromagnetism, absent in the pristine condition at room temperature, can be established by electrically switching the BTO ferroelectric domains in the out-of-plane direction. The present results confirm that electrically induced strain can be exploited to control magnetism in multiferroic oxide heterostructures.
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Submitted 6 June, 2022;
originally announced June 2022.
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A three-order-parameter bistable magnetoelectric multiferroic metal
Authors:
Andrea Urru,
Francesco Ricci,
Alessio Filippetti,
Jorge Iniguez,
Vincenzo Fiorentini
Abstract:
Using first-principles calculations we predict that the layered-perovskite metal Bi$_5$Mn$_5$O$_{17}$ is a ferromagnet, ferroelectric, and ferrotoroid which may realize the long sought-after goal of a room-temperature ferromagnetic single-phase multiferroic with large, strongly coupled, primary-order polarization and magnetization. Bi$_5$Mn$_5$O$_{17}$ has two nearly energy-degenerate ground state…
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Using first-principles calculations we predict that the layered-perovskite metal Bi$_5$Mn$_5$O$_{17}$ is a ferromagnet, ferroelectric, and ferrotoroid which may realize the long sought-after goal of a room-temperature ferromagnetic single-phase multiferroic with large, strongly coupled, primary-order polarization and magnetization. Bi$_5$Mn$_5$O$_{17}$ has two nearly energy-degenerate ground states with mutually orthogonal vector order parameters (polarization, magnetization, ferrotoroidicity), which can be rotated globally by switching between ground states. Giant cross-coupling magnetoelectric and magnetotoroidic effects, as well as optical non-reciprocity, are thus expected. Importantly, Bi$_5$Mn$_5$O$_{17}$ should be thermodynamically stable in O-rich growth conditions, and hence experimentally accessible.
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Submitted 1 October, 2020;
originally announced October 2020.
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Artificial quantum confinement in LAO3/STO heterostructure
Authors:
Marco Caputo,
Margherita Boselli,
Alessio Filippetti,
Sebastien Lamal,
Danfeng Li,
Alla Chickina,
Claudia Cancellieri,
Thorsten Schmitt,
Jean-Marc Triscone,
Philippe Ghosez,
Stefano Gariglio,
Vladimir N. Strocov
Abstract:
Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation o…
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Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation of the interfacial 2D electron system (2DES) discovered at the LAO3/STO3 (LAO/STO) interface. In samples prepared by growing a LAO layer onto a STO substrate, the 2DES is confined in a band bending potential well, whose width is set by the interface charge density and the STO dielectric properties, and determines the electronic band structure. Growing LAO (2 nm) /STO (x nm)/LAO (2 nm) heterostructures on STO substrates allows us to control the extension of the confining potential of the top 2DES via the thickness of the STO layer. In such samples, we explore the dependence of the electronic structure on the width of the confining potential using soft X-ray ARPES combined with ab-initio calculations. The results indicate that varying the thickness of the STO film modifies the quantization of the 3d t2g bands and, interestingly, redistributes the charge between the dxy and dxz/dyz bands.
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Submitted 26 March, 2019;
originally announced March 2019.
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Singling out the effect of quenched disorder in the phase diagram of cuprates
Authors:
R. De Renzi,
F. Coneri,
F. Mezzadri,
G. Allodi,
G. Calestani,
L. Righi,
G. M. Lopez,
V. Fiorentini,
A. Filippetti,
S. Sanna
Abstract:
We investigate the specific influence of structural disorder on the suppression of antiferromagnetic order and on the emergence of cuprate superconductivity. We single out pure disorder, by focusing on a series of Y$_{z}$Eu$_{1-z}$Ba$_2$Cu$_3$O$_{6+y}$ samples at fixed oxygen content $y=0.35$, in the range $0\le z\le 1$. The gradual Y/Eu isovalent substitution smoothly drives the system through th…
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We investigate the specific influence of structural disorder on the suppression of antiferromagnetic order and on the emergence of cuprate superconductivity. We single out pure disorder, by focusing on a series of Y$_{z}$Eu$_{1-z}$Ba$_2$Cu$_3$O$_{6+y}$ samples at fixed oxygen content $y=0.35$, in the range $0\le z\le 1$. The gradual Y/Eu isovalent substitution smoothly drives the system through the Mott-insulator to superconductor transition from a full antiferromagnet with Néel transition $T_N=320$ K at $z=0$ to a bulk superconductor with superconducting critical temperature $T_c=18$ K at $z=1$, YBa$_2$Cu$_3$O$_{6.35}$. The electronic properties are finely tuned by gradual lattice deformations induced by the different cationic radii of the two lanthanides, inducing a continuous change of the basal Cu(1)-O chain length, as well as a controlled amount of disorder in the active Cu(2)O$_2$ bilayers. We check that internal charge transfer from the basal to the active plane is entirely responsible for the doping of the latter and we show that superconductivity emerges with orthorhombicity. By comparing transition temperatures with those of the isoelectronic clean system we deterime the influence of pure structural disorder connected with the Y/Eu alloy.
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Submitted 9 March, 2019; v1 submitted 12 November, 2018;
originally announced November 2018.
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Berry phase engineering at oxide interfaces
Authors:
D. J. Groenendijk,
C. Autieri,
T. C. van Thiel,
W. Brzezicki,
N. Gauquelin,
P. Barone,
K. H. W. van den Bos,
S. van Aert,
J. Verbeeck,
A. Filippetti,
S. Picozzi,
M. Cuoco,
A. D. Caviglia
Abstract:
Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle cha…
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Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle changes in the band structure. A unique platform for its manipulation is provided by transition metal oxide heterostructures, where engineering of emergent electrodynamics becomes possible at atomically sharp interfaces. We demonstrate that the Berry curvature and its corresponding vector potential can be manipulated by interface engineering of the correlated itinerant ferromagnet SrRuO$_3$ (SRO). Measurements of the AHE reveal the presence of two interface-tunable spin-polarized conduction channels. Using theoretical calculations, we show that the tunability of the AHE at SRO interfaces arises from the competition between two topologically non-trivial bands. Our results demonstrate how reconstructions at oxide interfaces can be used to control emergent electrodynamics on a nanometer-scale, opening new routes towards spintronics and topological electronics.
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Submitted 12 October, 2018;
originally announced October 2018.
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Theory of thermoelectricity in Mg$_3$Sb$_2$ with an energy- and temperature-dependent relaxation time
Authors:
Roberta Farris,
Maria Barbara Maccioni,
Alessio Filippetti,
Vincenzo Fiorentini
Abstract:
We study the electronic transport coefficients and the thermoelectric figure of merit ZT in $n$-doped Mg$_3$Sb$_2$ based on density-functional electronic structure and Bloch-Boltzmann transport theory with an energy- and temperature-dependent relaxation time. Both the lattice and electronic thermal conductivities affect the final ZT significantly, hence we include the lattice thermal conductivity…
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We study the electronic transport coefficients and the thermoelectric figure of merit ZT in $n$-doped Mg$_3$Sb$_2$ based on density-functional electronic structure and Bloch-Boltzmann transport theory with an energy- and temperature-dependent relaxation time. Both the lattice and electronic thermal conductivities affect the final ZT significantly, hence we include the lattice thermal conductivity calculated ab initio. Where applicable, our results are in good agreement with existing experiments, thanks to the treatment of lattice thermal conductivity and the improved description of electronic scattering. ZT increases monotonically in our T range (300 to 700 K), reaching a value of 1.6 at 700 K; it peaks as a function of doping at about 3$\times$10$^{19}$ cm$^{-3}$. At this doping, ZT$>$1 for T$>$500 K.
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Submitted 3 December, 2018; v1 submitted 19 July, 2018;
originally announced July 2018.
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Meta-screening and permanence of polar distortion in metallized ferroelectrics
Authors:
Hong Jian Zhao,
Alessio Filippetti,
Carlos Escorihuela-Sayalero,
Pietro Delugas,
Enric Canadell,
Laurent Bellaiche,
Vincenzo Fiorentini,
Jorge Iniguez
Abstract:
Ferroelectric materials are characterized by a spontaneous polar distortion. The behavior of such distortions in the presence of free charge is the key to the physics of metallized ferroelectrics in particular, and of structurally-polar metals more generally. Using first-principles simulations, here we show that a polar distortion resists metallization and the attendant suppression of long-range d…
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Ferroelectric materials are characterized by a spontaneous polar distortion. The behavior of such distortions in the presence of free charge is the key to the physics of metallized ferroelectrics in particular, and of structurally-polar metals more generally. Using first-principles simulations, here we show that a polar distortion resists metallization and the attendant suppression of long-range dipolar interactions in the vast majority of a sample of 11 representative ferroelectrics. We identify a meta-screening effect, occurring in the doped compounds as a consequence of the charge rearrangements associated to electrostatic screening, as the main factor determining the survival of a non-centrosymmetric phase. Our findings advance greatly our understanding of the essentials of structurally-polar metals, and offer guidelines on the behavior of ferroelectrics upon field-effect charge injection or proximity to conductive device elements.
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Submitted 21 February, 2018;
originally announced February 2018.
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Charge doping and large lattice expansion in oxygen-deficient heteroepitaxial WO3
Authors:
Giordano Mattoni,
Alessio Filippetti,
Nicola Manca,
Pavlo Zubko,
Andrea D. Caviglia
Abstract:
Tungsten trioxide is a versatile material with widespread applications ranging from electrochromic and optoelectronic devices to water splitting and catalysis of chemical reactions. For technological applications, thin films of WO3 are particularly appealing, taking advantage from high surface-to-volume ratio and tunable physical properties. However, the growth of stoichiometric, crystalline thin…
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Tungsten trioxide is a versatile material with widespread applications ranging from electrochromic and optoelectronic devices to water splitting and catalysis of chemical reactions. For technological applications, thin films of WO3 are particularly appealing, taking advantage from high surface-to-volume ratio and tunable physical properties. However, the growth of stoichiometric, crystalline thin films is challenging because the deposition conditions are very sensitive to the formation of oxygen vacancies. In this work, we show how background oxygen pressure during pulsed laser deposition can be used to tune the structural and electronic properties of WO3 thin films. By performing X-ray diffraction and low-temperature transport measurements, we find changes in WO3 lattice volume up to 10%, concomitantly with an insulator-to-metal transition as a function of increased level of electron doping. We use advanced ab initio calculations to describe in detail the properties of the oxygen vacancy defect states, and their evolution in terms of excess charge concentration. Our results depict an intriguing scenario where structural, electronic, optical, and transport properties of WO3 single-crystal thin films can all be purposely tuned by a suited control of oxygen vacancies formation during growth.
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Submitted 14 November, 2017;
originally announced November 2017.
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Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers
Authors:
Giordano Mattoni,
David J. Baek,
Nicola Manca,
Nils Verhagen,
Lena F. Kourkoutis,
Alessio Filippetti,
Andrea D. Caviglia
Abstract:
Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the most studied in this regard, and its origin is determined by both the presence of a polar field in LaAlO3 and the insurgence of point defects, such as oxygen vacan…
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Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the most studied in this regard, and its origin is determined by both the presence of a polar field in LaAlO3 and the insurgence of point defects, such as oxygen vacancies and intermixed cations. These defects usually reside in the conduction channel and are responsible for a decreased electronic mobility. In this work we use an amorphous WO3 overlayer to control the defect formation and obtain an increased electron mobility and effective mass in WO3/LaAlO3/SrTiO3 heterostructures. The studied system shows a sharp insulator-to-metal transition as a function of both LaAlO3 and WO3 layer thickness. Low-temperature magnetotransport reveals a strong magnetoresistance reaching 900% at 10 T and 1.5 K, the presence of multiple conduction channels with carrier mobility up to 80 000 cm2/Vs and an unusually high effective mass of 5.6 me. The amorphous character of the WO3 overlayer makes this a versatile approach for defect control at oxide interfaces, which could be applied to other heterestrostures disregarding the constraints imposed by crystal symmetry.
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Submitted 21 April, 2017;
originally announced April 2017.
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Large phonon-drag enhancement induced by narrow quantum confinement at the LaAlO3/SrTiO3 interface
Authors:
I. Pallecchi,
F. Telesio,
D. Marre',
D. Li,
S. Gariglio,
J. -M. Triscone,
A. Filippetti
Abstract:
The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T =50 K where thermopower is dominated by phonon-drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values ~mV/K an…
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The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T =50 K where thermopower is dominated by phonon-drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values ~mV/K and above. The phonon-drag enhancement at the interface is traced back to the tight carrier confinement of the 2DES, and represents a sharp signature of strong electron-acoustic phonon coupling at the interface.
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Submitted 18 May, 2016;
originally announced May 2016.
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Prediction of a native ferroelectric metal
Authors:
Alessio Filippetti,
Vincenzo Fiorentini,
Francesco Ricci,
Pietro Delugas,
Jorge Íñiguez
Abstract:
The possibility that metals may support ferroelectricity is an open issue. Anderson and Blount showed that certain martensitic transitions involve inversion symmetry breaking and the formal existence of a polar axis, so 'metallic ferroelectric' behavior has been claimed for metals undergoing a centrosymmetric (CS) to non-CS structural transformation (Cd2ReO7, LiOsO3) or natively non-CS (SrCaRu2O),…
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The possibility that metals may support ferroelectricity is an open issue. Anderson and Blount showed that certain martensitic transitions involve inversion symmetry breaking and the formal existence of a polar axis, so 'metallic ferroelectric' behavior has been claimed for metals undergoing a centrosymmetric (CS) to non-CS structural transformation (Cd2ReO7, LiOsO3) or natively non-CS (SrCaRu2O), or for ferroelectric insulators whose polar distortion survives moderate metallicity induced by doping or proximity. However, none of these systems, nor any other to our knowledge, embodies a truly ferroelectric metal with native switchable polarization and native metallicity coexisting in a single phase. Here we report the first-ever theoretical prediction of such a material. By first-principles calculations, we show that the layered perovskite Bi5Ti5O17 has a non-zero density of states at the Fermi level and metal-like conductivity, as well as a spontaneous polarization in zero field. Further, we predict that the polarization of Bi5Ti5O17 is switchable both in principle, as the material complies with the sufficient symmetry requirements, and in practice, as Bi5Ti5O17 can sustain a sizable potential drop along the polar direction, as needed to revert its polarization by application of an electric bias.
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Submitted 30 November, 2015;
originally announced November 2015.
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Theoretical and experimental investigation of optical absorption anisotropy in $β$-Ga2O3
Authors:
Francesco Ricci,
Francesco Boschi,
Andrea Baraldi,
Alessio Filippetti,
M. Higashiwaki,
A. Kuramata,
Vincenzo Fiorentini,
Roberto Fornari
Abstract:
The question of optical bandgap anisotropy in the monoclinic semiconductor $β$-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods. As expected, the bandgap edge of bulk $β$-Ga2O3 was found to be a function of light polarization and crystal orientation, with the lowest onset occurring at polariz…
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The question of optical bandgap anisotropy in the monoclinic semiconductor $β$-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods. As expected, the bandgap edge of bulk $β$-Ga2O3 was found to be a function of light polarization and crystal orientation, with the lowest onset occurring at polarization in the ac crystal plane around 4.5-4.6 eV; polarization along b unambiguously shifts the onset up by 0.2 eV. The theoretical analysis clearly indicates that the shift of the b onset is due to a suppression of the transition matrix elements of the three top valence bands at $Γ$ point.
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Submitted 9 November, 2015;
originally announced November 2015.
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Polaronic metal state at the LaAlO3/SrTiO3 interface
Authors:
C. Cancellieri,
A. S. Mishchenko,
U. Aschauer,
A. Filippetti,
C. Faber,
O. S. Barisic,
V. A. Rogalev,
T. Schmitt,
N. Nagaosa,
V. N. Strocov
Abstract:
Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The paradigm example is the interface between the two band insulators LaAlO3 and SrTiO3 (LAO/STO) that hosts two-dimensional electron system (2DES). Apart from the…
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Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The paradigm example is the interface between the two band insulators LaAlO3 and SrTiO3 (LAO/STO) that hosts two-dimensional electron system (2DES). Apart from the mobile charge carriers, this system exhibits a range of intriguing properties such as field effect, superconductivity and ferromagnetism, whose fundamental origins are still debated. Here, we use soft-X-ray angle-resolved photoelectron spectroscopy to penetrate through the LAO overlayer and access charge carriers at the buried interface. The experimental spectral function directly identifies the interface charge carriers as large polarons, emerging from coupling of charge and lattice degrees of freedom, and involving two phonons of different energy and thermal activity. This phenomenon fundamentally limits the carrier mobility and explains its puzzling drop at high temperatures.
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Submitted 16 October, 2015; v1 submitted 16 July, 2015;
originally announced July 2015.
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Methylammonium fragmentation in amines as source of localized trap levels and the healing role of Cl in Hybrid Lead-Iodide Perovskites
Authors:
Pietro Delugas,
Alessio Filippetti,
Alessandro Mattoni
Abstract:
The resilience to deep traps and localized defect formation is one of the important aspects that qualify a material as suited photo-absorber in solar cell devices. Here we investigate by ab-initio calculations the fundamental physics and chemistry of a number of possible localized defects in hybrid methylammonium lead-iodide perovskites. Our analysis encompasses a number of possible molecular frag…
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The resilience to deep traps and localized defect formation is one of the important aspects that qualify a material as suited photo-absorber in solar cell devices. Here we investigate by ab-initio calculations the fundamental physics and chemistry of a number of possible localized defects in hybrid methylammonium lead-iodide perovskites. Our analysis encompasses a number of possible molecular fragments deriving from the dissociation of methylammonium. In particular, we found that in stoichiometric conditions both ammonia and methylamine molecules present lone-pair localized levels well within the perovskite band gap, while the radical cation CH$_2$NH$_3$$^+$ observed by EPR after irradiation injects partially-occupied levels into the band gap but only in $p$-type conditions. These defects are thus potentially capable to significantly alter absorption and recombination properties. Amazingly, we found that additional interstitial Cl is capable to remove these localized states from the band gap. These results are consistent with the observed improvement of photoabsorption properties due to the Cl inclusion in the solution processing.
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Submitted 7 May, 2015;
originally announced May 2015.
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Giant Oscillating Thermopower at Oxide Interfaces
Authors:
I. Pallecchi,
F. Telesio,
D. Li,
A. Fête,
S. Gariglio,
J. -M. Triscone,
A. Filippetti,
P. Delugas,
V. Fiorentini,
D. Marré
Abstract:
Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures. Here, we investigate thermopower to study the electronic structure in LaAlO3/SrTiO3 at low temperature as a function of gate field. In particular, under large negative gate voltage, corresponding to the…
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Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures. Here, we investigate thermopower to study the electronic structure in LaAlO3/SrTiO3 at low temperature as a function of gate field. In particular, under large negative gate voltage, corresponding to the strongly depleted charge density regime, thermopower displays record-high negative values of the order of 10^4 - 10^5 microV/K, oscillating at regular intervals as a function of the gate voltage. The huge thermopower magnitude can be attributed to the phonon-drag contribution, while the oscillations map the progressive depletion and the Fermi level descent across a dense array of localized states lying at the bottom of the Ti 3d conduction band. This study is the first direct evidence of a localized Anderson tail in the two-dimensional (2D) electron liquid at the LaAlO3/SrTiO3 interface.
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Submitted 8 April, 2015;
originally announced April 2015.
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Multi-gap absorption in CaCu$_{3}$Ti$_{4}$O$_{12}$ and the predictivity of ab initio methods
Authors:
Francesco Ricci,
Paola Alippi,
Alessio Filippetti,
Vincenzo Fiorentini
Abstract:
We report the electronic properties of the quadruple perovskite CaCu$_{3}$Ti$_{4}$O$_{12}$ as obtained via several density-functional based methods, and propose a new interpretation of optical experiments to the effect that four distinct transitions (centered around 0.7, 1.5, 2.5, and 3.5 eV) contribute to the spectrum. The comparison with experiment is satisfactory, especially after we account fo…
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We report the electronic properties of the quadruple perovskite CaCu$_{3}$Ti$_{4}$O$_{12}$ as obtained via several density-functional based methods, and propose a new interpretation of optical experiments to the effect that four distinct transitions (centered around 0.7, 1.5, 2.5, and 3.5 eV) contribute to the spectrum. The comparison with experiment is satisfactory, especially after we account for the effects of spin disorder, which does not close the fundamental gap but suppresses the transition intensity. We find that some of the methods we employ tend to overestimate considerably the gaps for standard values of the respective adjustable parameters.
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Submitted 14 July, 2014;
originally announced July 2014.
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Large band offset as driving force of 2-dimensional electron confinement: the case of SrTiO$_3$/SrZrO$_3$ interface
Authors:
P. Delugas,
A. Filippetti,
A. Gadaleta,
I. Pallecchi D. Marré,
V. Fiorentini
Abstract:
Using advanced first-principles calculations we predict that the non-polar SrTiO$_3$/SrZrO$_3$ (001) interface, designed as either thin SrZrO$_3$ film deposited on SrTiO$_3$ or short-period (SrTiO$_3$)$_m$/(SrZrO$_3$)$_n$ superlattice, host a 2-dimensionally confined electron gas. Mobile electron charge due to native impurities, field-effect, or modulation doping remains tightly trapped at the int…
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Using advanced first-principles calculations we predict that the non-polar SrTiO$_3$/SrZrO$_3$ (001) interface, designed as either thin SrZrO$_3$ film deposited on SrTiO$_3$ or short-period (SrTiO$_3$)$_m$/(SrZrO$_3$)$_n$ superlattice, host a 2-dimensionally confined electron gas. Mobile electron charge due to native impurities, field-effect, or modulation doping remains tightly trapped at the interface. Key ingredients for this occurrence are a) the peculiar chemistry of 3d orbitals, b) the large band offset at titanate-zirconate interface.
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Submitted 19 September, 2013;
originally announced September 2013.
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Doping-induced dimensional crossover and thermopower burst in Nb-doped SrTiO$_3$ superlattices
Authors:
P. Delugas,
A. Filippetti,
M. J. Verstraete,
I. Pallecchi,
D. Marré,
V. Fiorentini
Abstract:
Using advanced ab-initio calculations, we describe the formation and confinement of a two-dimensional electron gas in short-period ($\simeq$4 nm) Nb-doped SrTiO$_3$ superlattices as function of Nb doping. We predict complete two-dimensional confinement for doping concentrations higher than 70%. In agreement with previous observations, we find a large thermopower enhancement at room temperature. Ho…
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Using advanced ab-initio calculations, we describe the formation and confinement of a two-dimensional electron gas in short-period ($\simeq$4 nm) Nb-doped SrTiO$_3$ superlattices as function of Nb doping. We predict complete two-dimensional confinement for doping concentrations higher than 70%. In agreement with previous observations, we find a large thermopower enhancement at room temperature. However, this effect is primarily determined by dilution of the mobile charge over a multitude of weakly occupied bands. As a general rule, we conclude that thermopower in similar heterostructures will be more enhanced by weak, rathern than tight spatial confinement.
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Submitted 19 September, 2013;
originally announced September 2013.
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Giant electroresistance and tunable magnetoelectricity in a multiferroic junction
Authors:
Francesco Ricci,
Alessio Filippetti,
Vincenzo Fiorentini
Abstract:
First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric depolarizing field, whose switching changes the interface transmission probabilities for tunneling electrons, leading to electroresistance modulation over several orders…
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First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric depolarizing field, whose switching changes the interface transmission probabilities for tunneling electrons, leading to electroresistance modulation over several orders of magnitude. The switching further affects the interface spin density, naturally driving magnetoresistance as well as modulated spin-dependent in-plane resistivity, which may be exploited in field-effect devices.
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Submitted 15 November, 2013; v1 submitted 19 September, 2013;
originally announced September 2013.
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Doping-dependent band structure of LaAlO$_{3}$/SrTiO$_{3}$ interfaces by soft x-ray polarization-controlled resonant angle-resolved photoemission
Authors:
Claudia Cancellieri,
Mathilde L. Reinle-Schmitt,
Masaki Kobayashi,
Vladimir N. Strocov,
Denis Fontaine,
Philippe Ghosez,
Alessio Filippetti,
Pietro Delugas,
Vincenzo Fiorentini,
Philip R. Willmott
Abstract:
Polarization-controlled synchrotron radiation was used to map the electronic structure of buried conducting interfaces of LaAlO$_3$/SrTiO$_3$ in a resonant angle-resolved photoemission experiment. A strong dependence on the light polarization of the Fermi surface and band dispersions is demonstrated, highlighting the distinct Ti 3d orbitals involved in 2D conduction. Samples with different 2D dopi…
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Polarization-controlled synchrotron radiation was used to map the electronic structure of buried conducting interfaces of LaAlO$_3$/SrTiO$_3$ in a resonant angle-resolved photoemission experiment. A strong dependence on the light polarization of the Fermi surface and band dispersions is demonstrated, highlighting the distinct Ti 3d orbitals involved in 2D conduction. Samples with different 2D doping levels were prepared and measured by photoemission, revealing different band occupancies and Fermi surface shapes. A direct comparison between the photoemission measurements and advanced first-principle calculations carried out for different 3d-band fillings is presented in conjunction with the 2D carrier concentration obtained from transport measurements.
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Submitted 26 July, 2013;
originally announced July 2013.
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Surface antiferromagnetism and incipient metal-insulator transition in strained manganite films
Authors:
F. Cossu,
U. Schwingenschlögl,
G. Colizzi,
A. Filippetti,
Vincenzo Fiorentini
Abstract:
Using first-principles calculations, we show that the (001) surface of the ferromagnet La$_{1-x}$Sr$_{x}$MnO$_{3}$ under epitaxial compression favors antiferromagnetic ordering in the first few surface layers, coexisting with ferromagnetic bulk order. The change in magnetic order is accompanied by a marked surface-related spectral pseudogap, signaling a metal-insulator near-transition at the surfa…
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Using first-principles calculations, we show that the (001) surface of the ferromagnet La$_{1-x}$Sr$_{x}$MnO$_{3}$ under epitaxial compression favors antiferromagnetic ordering in the first few surface layers, coexisting with ferromagnetic bulk order. The change in magnetic order is accompanied by a marked surface-related spectral pseudogap, signaling a metal-insulator near-transition at the surface. All surfaces exhibit huge outward relaxations an rumpling of the MnO$_{2}$ and LaO surface planes, causing a distinct shift in work function. The AF phase is an extreme surface-assisted case of the combination of in-plane AF super-exchange and vertical FM double-exchange couplings that rules magnetism in manganites under in-plane compression.
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Submitted 18 June, 2013; v1 submitted 20 December, 2012;
originally announced December 2012.
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Ferromagnetism and orbital order in a topological ferroelectric
Authors:
Marco Scarrozza,
Alessio Filippetti,
Vincenzo Fiorentini
Abstract:
We explore via density functional calculations the magnetic doping of a topological ferroelectric as an unconventional route to multiferroicity. Vanadium doping of the layered perovskite La$_{2}$Ti$_{2}$O$_{7}$ largely preserves electric polarization and produces robust ferromagnetic order, hence proper multiferroicity. The marked tendency of dopants to cluster into chains results in an insulating…
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We explore via density functional calculations the magnetic doping of a topological ferroelectric as an unconventional route to multiferroicity. Vanadium doping of the layered perovskite La$_{2}$Ti$_{2}$O$_{7}$ largely preserves electric polarization and produces robust ferromagnetic order, hence proper multiferroicity. The marked tendency of dopants to cluster into chains results in an insulating character at generic doping. Ferromagnetism stems from the symmetry breaking of the multi-orbital V system via an unusual "antiferro"-orbital order, and from the host's low-symmetry layered structure.
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Submitted 26 September, 2012; v1 submitted 13 June, 2012;
originally announced June 2012.
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Exceptionally large room-temperature ferroelectric polarization in the novel PbNiO3 multiferroic oxide
Authors:
X. F. Hao,
A. Stroppa,
S. Picozzi,
A. Filippetti,
C. Franchini
Abstract:
We present a study based on several advanced First-Principles methods, of the recently synthesized PbNiO3 [J. Am. Chem. Soc 133, 16920 (2011)], a rhombohedral antiferromagnetic insulator which crystallizes in the highly distorted R3c crystal structure. We find this compound electrically polarized, with a very large electric polarization of about 100 (\muC/cm)^2, thus even exceeding the polarizatio…
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We present a study based on several advanced First-Principles methods, of the recently synthesized PbNiO3 [J. Am. Chem. Soc 133, 16920 (2011)], a rhombohedral antiferromagnetic insulator which crystallizes in the highly distorted R3c crystal structure. We find this compound electrically polarized, with a very large electric polarization of about 100 (\muC/cm)^2, thus even exceeding the polarization of well-known BiFeO3. PbNiO3 is a proper ferroelectric, with polarization driven by large Pb-O polar displacements along the [111] direction. Contrarily to naive expectations, a definite ionic charge of 4+ for Pb ion can not be assigned, and in fact the large Pb 6s-O 2p hybridization drives the ferroelectric distortion through a lone-pair mechanism similar to that of other Pb- and Bi-based multiferroics
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Submitted 13 June, 2012;
originally announced June 2012.
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Ordering and multiple phase transitions in ultra-thin nickelate superlattices
Authors:
Danilo Puggioni,
Alessio Filippetti,
Vincenzo Fiorentini
Abstract:
We interpret via advanced ab initio calculations the multiple phase transitions observed recently in ultra-thin LaNiO$_{3}$/LaAlO$_{3}$ superlattices. The ground state is insulating, charge-ordered, and antiferromagnetic due to concurrent structural distortion and weak valency disproportionation. We infer distinct transitions at 40 K and 150 K, respectively, from antiferromagnetic order to moment…
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We interpret via advanced ab initio calculations the multiple phase transitions observed recently in ultra-thin LaNiO$_{3}$/LaAlO$_{3}$ superlattices. The ground state is insulating, charge-ordered, and antiferromagnetic due to concurrent structural distortion and weak valency disproportionation. We infer distinct transitions at 40 K and 150 K, respectively, from antiferromagnetic order to moment disorder, and from structurally-dimerized insulator to an undistorted metallic Pauli paramagnet (exhibiting a cuprate-like Fermi surface). The results are in satisfactory agreement with experiment.
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Submitted 26 September, 2012; v1 submitted 9 March, 2012;
originally announced March 2012.
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A variational pseudo-self-interaction correction approach: ab-initio description of correlated oxides and molecules
Authors:
A. Filippetti,
C. D. Pemmaraju,
P. Delugas,
D. Puggioni,
V. Fiorentini,
S. Sanvito
Abstract:
We present a fully variational generalization of the pseudo self-interaction correction (VPSIC) approach previously presented in two implementations based on plane-waves and atomic orbital basis set, known as PSIC and ASIC, respectively. The new method is essentially equivalent to the previous version for what concern the electronic properties, but it can be exploited to calculate total-energy der…
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We present a fully variational generalization of the pseudo self-interaction correction (VPSIC) approach previously presented in two implementations based on plane-waves and atomic orbital basis set, known as PSIC and ASIC, respectively. The new method is essentially equivalent to the previous version for what concern the electronic properties, but it can be exploited to calculate total-energy derived properties as well, such as forces and structural optimization. We apply the method to a variety of test cases including both non-magnetic and magnetic correlated oxides and molecules, showing a generally good accuracy in the description of both structural and electronic properties.
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Submitted 29 June, 2011;
originally announced June 2011.
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Exchange interactions and magnetic phases of transition metal oxides: benchmarking advanced ab initio methods
Authors:
T. Archer,
C. D. Pemmaraju,
S. Sanvito,
C. Franchini,
J. He,
A. Filippetti,
P. Delugas,
D. Puggioni,
V. Fiorentini,
R. Tiwari,
P. Majumdar
Abstract:
The magnetic properties of the transition metal monoxides MnO and NiO are investigated at equilibrium and under pressure via several advanced first-principles methods coupled with Heisenberg Hamiltonian MonteCarlo. The comparative first-principles analysis involves two promising beyond-local density functionals approaches, namely the hybrid density functional theory and the recently developed vari…
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The magnetic properties of the transition metal monoxides MnO and NiO are investigated at equilibrium and under pressure via several advanced first-principles methods coupled with Heisenberg Hamiltonian MonteCarlo. The comparative first-principles analysis involves two promising beyond-local density functionals approaches, namely the hybrid density functional theory and the recently developed variational pseudo-self-interaction correction method, implemented with both plane-wave and atomic-orbital basis sets. The advanced functionals deliver a very satisfying rendition, curing the main drawbacks of the local functionals and improving over many other previous theoretical predictions. Furthermore, and most importantly, they convincingly demonstrate a degree of internal consistency, despite differences emerging due to methodological details (e.g. plane waves vs. atomic orbitals)
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Submitted 8 July, 2011; v1 submitted 3 May, 2011;
originally announced May 2011.
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Exceptionally strong magnetism in 4d perovskites RTcO3 (R=Ca,Sr,Ba)
Authors:
C. Franchini,
T. Archer,
J. He,
X. -Q. Chen,
A. Filippetti,
S. Sanvito
Abstract:
The evolution of the magnetic ordering temperature of the 4d3 perovskites RTcO3 (R=Ca,Sr,Ba) and its relation with its electronic and structural properties has been studied by means of hybrid density functional theory and Monte Carlo simulations. When compared to the most widely studied 3d perovskites the large spatial extent of the 4d shells and their relatively strong hybridization with oxygen w…
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The evolution of the magnetic ordering temperature of the 4d3 perovskites RTcO3 (R=Ca,Sr,Ba) and its relation with its electronic and structural properties has been studied by means of hybrid density functional theory and Monte Carlo simulations. When compared to the most widely studied 3d perovskites the large spatial extent of the 4d shells and their relatively strong hybridization with oxygen weaken the tendency to form Jahn-Teller like orbital ordering. This strengthens the superexchange interaction. The resulting insulating G-type antiferromagnetic ground state is characterized by large superexchange coupling constants (26-35 meV) and Neel temperatures (750-1200 K). These monotonically increase as a function of the R ionic radius due to the progressive enhancement of the volume and the associated decrease of the cooperative rotation of the TcO6 octahedra.
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Submitted 28 June, 2011; v1 submitted 24 March, 2011;
originally announced March 2011.
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Fermi-surface pockets in magnetic underdoped cuprates from first principles
Authors:
Alessio Filippetti,
Danilo Puggioni,
Vincenzo Fiorentini
Abstract:
Using an innovative first-principles band theory enabling the exploration of Mott-insulating magnetic cuprates, we study the Fermi surface of underdoped Y$_{1-x}$Ca$_x$Ba$_2$Cu$_3$O$_6$ in a selection of magnetically ordered and polaronic states. All phases exhibit qualitatively similar, hole-like nodal-point small pockets. Their properties (area, masses, mass sign) only partially match those ex…
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Using an innovative first-principles band theory enabling the exploration of Mott-insulating magnetic cuprates, we study the Fermi surface of underdoped Y$_{1-x}$Ca$_x$Ba$_2$Cu$_3$O$_6$ in a selection of magnetically ordered and polaronic states. All phases exhibit qualitatively similar, hole-like nodal-point small pockets. Their properties (area, masses, mass sign) only partially match those extracted from recent quantum-oscillation experiments. Ab initio calculations, therefore, do not straightforwardly support a magnetic origin of quantum oscillations.
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Submitted 22 February, 2009;
originally announced February 2009.
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Fermi-surface pockets in $YBa_2Cu_3O_{6.5}$ : A comparison of ab initio techniques
Authors:
Danilo Puggioni,
Alessio Filippetti,
Vincenzo Fiorentini
Abstract:
We study the Fermi surface of metallic, non-magnetic \textit{ortho}-II YBa$_2$Cu$_3$O$_{6.5}$ using three different density-functional-based band-structure techniques (GGA, GGA+U, PSIC). The calculated Fermi surface exhibits no pockets in GGA+U and PSIC, a minor one in GGA. Upon shifting the Fermi level in the vicinity of the calculated value, we instead observe several pocket structures. We cal…
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We study the Fermi surface of metallic, non-magnetic \textit{ortho}-II YBa$_2$Cu$_3$O$_{6.5}$ using three different density-functional-based band-structure techniques (GGA, GGA+U, PSIC). The calculated Fermi surface exhibits no pockets in GGA+U and PSIC, a minor one in GGA. Upon shifting the Fermi level in the vicinity of the calculated value, we instead observe several pocket structures. We calculate their cross-sectional areas and cyclotron masses. Overall, our calculations show no solid evidence of the existence of electron-like --nor, in fact, of any-- Fermi surface pockets in this phase. This suggests that the origin of the pockets should be sought for in other, different phases.
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Submitted 28 January, 2009;
originally announced January 2009.
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Dielectric constant boost in amorphous sesquioxides
Authors:
Pietro Delugas,
Vincenzo Fiorentini,
Alessio Filippetti
Abstract:
High-kappa dielectrics for insulating layers are a current key ingredient of microelectronics. X2O3 sesquioxide compounds are among the candidates. Here we show for a typical material of this class, ScO3, that the relatively modest dielectric constant of its crystalline phase is enhanced in the amorphous phase by over 40% (from ~15 to ~22). This is due to the disorder-induced activation of low f…
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High-kappa dielectrics for insulating layers are a current key ingredient of microelectronics. X2O3 sesquioxide compounds are among the candidates. Here we show for a typical material of this class, ScO3, that the relatively modest dielectric constant of its crystalline phase is enhanced in the amorphous phase by over 40% (from ~15 to ~22). This is due to the disorder-induced activation of low frequency cation-related modes which are inactive or inefficient in the crystal, and by the conservation of effective dynamical charges (a measure of atomic polarizability). The analysis employs density-functional energy-force and perturbation-theory calculations of the dielectric response of amorphous samples generated by pair-potential molecular dynamics.
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Submitted 12 March, 2008;
originally announced March 2008.
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Chain metallicity and antiferro-paramagnetism competition in underdoped YBa$_2$Cu$_3$O$_{6+x}$: a first principles description
Authors:
Alessio Filippetti,
Giorgia M. Lopez,
Mauro Mantega,
Vincenzo Fiorentini
Abstract:
We describe from advanced first principles calculations the energetics of oxygen doping and its relation to insulator-metal transitions in underdoped YBa$_2$Cu$_3$O$_{6+x}$. We find a strong tendency of doping oxygens to order into non-magnetic Cu$^{1+}$O$_x$ chains at any $x$. Ordering produces one-dimensional metallic bands, while configurations with non-aligned oxygens are insulating. The Cu…
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We describe from advanced first principles calculations the energetics of oxygen doping and its relation to insulator-metal transitions in underdoped YBa$_2$Cu$_3$O$_{6+x}$. We find a strong tendency of doping oxygens to order into non-magnetic Cu$^{1+}$O$_x$ chains at any $x$. Ordering produces one-dimensional metallic bands, while configurations with non-aligned oxygens are insulating. The Cu$^{2+}$O$_2$ planes remain insulating and antiferromagnetic up to a threshold between $x$=0.25 and 0.5, above which a paramagnetic normal-metal state prevails. The in-plane antiferro-paramagnetic competition depends on $x$, but only weakly on the ordering state of the chains.
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Submitted 21 July, 2008; v1 submitted 4 March, 2008;
originally announced March 2008.
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Conservation of dielectric constant upon amorphization in perovskite oxides
Authors:
Pietro Delugas,
Vincenzo Fiorentini,
Alessio Filippetti,
Geoffrey Pourtois
Abstract:
We report calculations indicating that amorphous RAO$_3$ oxides, with R and A trivalent cations, have approximately the same static dielectric constant as their perovskite crystal phase. The effect is due to the disorder-activated polar response of non-polar crystal modes at low frequency, which compensates a moderate but appreciable reduction of the ionic dynamical charges. The dielectric respo…
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We report calculations indicating that amorphous RAO$_3$ oxides, with R and A trivalent cations, have approximately the same static dielectric constant as their perovskite crystal phase. The effect is due to the disorder-activated polar response of non-polar crystal modes at low frequency, which compensates a moderate but appreciable reduction of the ionic dynamical charges. The dielectric response was studied via density-functional perturbation theory. Amorphous samples were generated by molecular dynamics melt-and-quench simulations.
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Submitted 4 March, 2008;
originally announced March 2008.
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Ab-initio description of hole localization and Zhang-Rice singlets in one-dimensional doped cuprates
Authors:
Alessio Filippetti,
Vincenzo Fiorentini
Abstract:
We present the first ab-initio band-theory-based description of spin-compensated polarons (known as Zhang-Rice singlets) in a hole-doped cuprate, specifically one-dimensional Ca_{2+x} Y_{2-x} Cu_5 O_10. Zhang-Rice singlets are many-particle configurations relevant to the exotic behavior of hole-doped cuprates, stemming from spontaneous charge localization. They appear in our case-study material…
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We present the first ab-initio band-theory-based description of spin-compensated polarons (known as Zhang-Rice singlets) in a hole-doped cuprate, specifically one-dimensional Ca_{2+x} Y_{2-x} Cu_5 O_10. Zhang-Rice singlets are many-particle configurations relevant to the exotic behavior of hole-doped cuprates, stemming from spontaneous charge localization. They appear in our case-study material above a threshold doping, successively turning the insulating undoped antiferromagnet into a gap insulator, a singlet-rich metallic paramagnet, and finally, a singlet-saturated insulating diamagnet.
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Submitted 4 March, 2008;
originally announced March 2008.
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Self-interaction errors in density functional calculations of electronic transport
Authors:
C. Toher,
A. Filippetti,
S. Sanvito,
Kieron Burke
Abstract:
All density functional calculations of single-molecule transport to date have used continuous exchange-correlation approximations. The lack of derivative discontinuity in such calculations leads to the erroneous prediction of metallic transport for insulating molecules. A simple and computationally undemanding atomic self-interaction correction greatly improves the agreement with experiment for…
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All density functional calculations of single-molecule transport to date have used continuous exchange-correlation approximations. The lack of derivative discontinuity in such calculations leads to the erroneous prediction of metallic transport for insulating molecules. A simple and computationally undemanding atomic self-interaction correction greatly improves the agreement with experiment for the prototype Au/dithiolated-benzene/Au junction.
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Submitted 10 June, 2005;
originally announced June 2005.
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Strong-correlation effects in Born effective charges
Authors:
Alessio Filippetti,
Nicola A. Spaldin
Abstract:
Large values of Born effective charges are generally considered as reliable indicators of the genuine tendency of an insulator towards ferroelectric instability. However, these quantities can be very much influenced by strong electron correlation and metallic behavior, which are not exclusive properties of ferroelectric materials. In this paper we compare the Born effective charges of some proto…
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Large values of Born effective charges are generally considered as reliable indicators of the genuine tendency of an insulator towards ferroelectric instability. However, these quantities can be very much influenced by strong electron correlation and metallic behavior, which are not exclusive properties of ferroelectric materials. In this paper we compare the Born effective charges of some prototypical ferroelectrics with those of magnetic, non-ferroelectric compounds using a novel, self-interaction free methodology that improves on the local-density approximation description of the electronic properties. We show that the inclusion of strong-correlation effects systermatically reduces the size of the Born effective charges and the electron localization lengths. Furthermore we give an interpretation of the Born effective charges in terms of band energy structure and orbital occupations which can be used as a guideline to rationalize their values in the general case.
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Submitted 15 March, 2003;
originally announced March 2003.
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A self-interaction corrected pseudopotential scheme for magnetic and strongly-correlated systems
Authors:
Alessio Filippetti,
Nicola Spaldin
Abstract:
Local-spin-density functional calculations may be affected by severe errors when applied to the study of magnetic and strongly-correlated materials. Some of these faults can be traced back to the presence of the spurious self-interaction in the density functional. Since the application of a fully self-consistent self-interaction correction is highly demanding even for moderately large systems, w…
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Local-spin-density functional calculations may be affected by severe errors when applied to the study of magnetic and strongly-correlated materials. Some of these faults can be traced back to the presence of the spurious self-interaction in the density functional. Since the application of a fully self-consistent self-interaction correction is highly demanding even for moderately large systems, we pursue a strategy of approximating the self-interaction corrected potential with a non-local, pseudopotential-like projector, first generated within the isolated atom and then updated during the self-consistent cycle in the crystal. This scheme, whose implementation is totally uncomplicated and particularly suited for the pseudopotental formalism, dramatically improves the LSDA results for a variety of compounds with a minimal increase of computing cost.
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Submitted 3 March, 2003;
originally announced March 2003.
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Self-interaction effects in (Ga,Mn)As and (Ga,Mn)N
Authors:
Alessio Filippetti,
Nicola A. Spaldin,
Stefano Sanvito
Abstract:
The electronic structures of Mn-doped zincblende GaAs and wurtzite GaN are calculated using both standard local-density functional theory (LSDA), and a novel pseudopotential self-interaction-corrected approach (pseudo-SIC), able to account for the effects of strong correlation. We find that, as expected, the self-interaction is not strong in (Ga,Mn)As, because the Fermi energy is crossed by weak…
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The electronic structures of Mn-doped zincblende GaAs and wurtzite GaN are calculated using both standard local-density functional theory (LSDA), and a novel pseudopotential self-interaction-corrected approach (pseudo-SIC), able to account for the effects of strong correlation. We find that, as expected, the self-interaction is not strong in (Ga,Mn)As, because the Fermi energy is crossed by weakly correlated As p - Mn d hybridized bands and the Mn 3d character is distributed through the whole valence band manifold. This result validates the extensive literature of LSDA studies on (Ga,Mn)As, including the conclusion that the ferromagnetism is hole-mediated. In contrast, the LSDA gives a qualitatively incorrect band structure for (Ga,Mn)N, which is characterized by localized Mn 3d bands with very strong self-interaction. Our pseudo-SIC calculations show a highly confined hole just above the Fermi energy in the majority band manifold. Such a band arrangement is consistent with (although by no means conclusive evidence for) a recent suggestion that formation of Zhang-Rice magnetic polarons is responsible for hole-mediated ferromagnetism in (Ga,Mn)N.
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Submitted 2 July, 2004; v1 submitted 10 February, 2003;
originally announced February 2003.
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Magnetic stress as a driving force of structural distortions: the case of CrN
Authors:
Alessio Filippetti,
Nicola A. Hill
Abstract:
We show that the observed transition from rocksalt to orthorhombic P$_{nma}$ symmetry in CrN can be understood in terms of stress anisotropy. Using local spin density functional theory, we find that the imbalance between stress stored in spin-paired and spin-unpaired Cr nearest neighbors causes the rocksalt structure to be unstable against distortions and justifies the observed antiferromagnetic…
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We show that the observed transition from rocksalt to orthorhombic P$_{nma}$ symmetry in CrN can be understood in terms of stress anisotropy. Using local spin density functional theory, we find that the imbalance between stress stored in spin-paired and spin-unpaired Cr nearest neighbors causes the rocksalt structure to be unstable against distortions and justifies the observed antiferromagnetic ordering. This stress has a purely magnetic origin, and may be important in any system where the coupling between spin ordering and structure is strong.
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Submitted 14 April, 2000;
originally announced April 2000.
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Double exchange-driven spin pairing at the (001) surface of manganites
Authors:
Alessio Filippetti,
Warren E. Pickett
Abstract:
The (001) surface of La_{1-x}Ca_xMnO_3 system in various magnetic orderings is studied by first principle calculations. A general occurrence is that z^2 dangling bond charge -- which is ``invisible'' in the formal valence picture -- is promoted to the bulk gap/Fermi level region. This drives a double-exchange-like process that serves to align the surface Mn spin with its subsurface neighbor, reg…
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The (001) surface of La_{1-x}Ca_xMnO_3 system in various magnetic orderings is studied by first principle calculations. A general occurrence is that z^2 dangling bond charge -- which is ``invisible'' in the formal valence picture -- is promoted to the bulk gap/Fermi level region. This drives a double-exchange-like process that serves to align the surface Mn spin with its subsurface neighbor, regardless of the bulk magnetic order. For heavy doping, the locally ``ferromagnetic'' coupling is very strong and the moment enhanced by as much as 30% over the bulk value.
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Submitted 25 January, 2000;
originally announced January 2000.
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First Principles Study of Structural, Electronic and Magnetic Interplay in Ferroelectromagnetic Yttrium Manganite
Authors:
Alessio Filippetti,
Nicola A. Hill
Abstract:
We present results of local spin density approximation pseudopotential calculations for the ferroelectromagnet, yttrium manganite (YMnO3). The origin of the differences between ferroelectric and non-ferroelectric perovskite manganites is determined by comparing the calculated properties of yttrium manganite in its ferroelectric hexagonal and non-ferroelectric orthorhombic phases. In addition, or…
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We present results of local spin density approximation pseudopotential calculations for the ferroelectromagnet, yttrium manganite (YMnO3). The origin of the differences between ferroelectric and non-ferroelectric perovskite manganites is determined by comparing the calculated properties of yttrium manganite in its ferroelectric hexagonal and non-ferroelectric orthorhombic phases. In addition, orthorhombic YMnO3 is compared with the prototypical non-ferroelectric manganite, lanthanum manganite. We show that, while the octahedral crystal field splitting of the cubic perovskite structure causes a centro-symmetric Jahn-Teller distortion around the Mn3+ ion, the markedly different splitting in hexagonal perovskites creates an electronic configuration consistent with ferroelectric distortion. We explain the nature of the distortion, and show that a local magnetic moment on the Mn3+ ion is a requirement for it to occur.
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Submitted 3 December, 2001; v1 submitted 1 November, 1999;
originally announced October 1999.
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Theory and applications of the stress density
Authors:
Alessio Filippetti,
Vincenzo Fiorentini
Abstract:
Drawing on the theory of quantum mechanical stress, we introduce the stress density in density functional theory. In analogy with the Chetty-Martin energy density, the stress density provides a spatial resolution of the contributions to the integrated macroscopic stress tensor. We give specific prescriptions for a practical and efficient implementation in the plane wave ultrasoft pseudopotential…
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Drawing on the theory of quantum mechanical stress, we introduce the stress density in density functional theory. In analogy with the Chetty-Martin energy density, the stress density provides a spatial resolution of the contributions to the integrated macroscopic stress tensor. We give specific prescriptions for a practical and efficient implementation in the plane wave ultrasoft pseudopotential method within the local-density approximation. We demonstrate the abilities of the stress density studying a set of representative test cases from surface and interface physics. In perspective, the stress density emerges as vastly more powerful and predictive than the integrated macroscopic stress.
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Submitted 21 December, 1999; v1 submitted 23 July, 1999;
originally announced July 1999.
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Magnetic reconstruction at (001) CaMnO$_3$ surface
Authors:
Alessio Filippetti,
Warren E. Pickett
Abstract:
The Mn-terminated (001) surface of the stable anti-ferromagnetic insulating phase of cubic perovskite CaMnO$_3$ is found to undergo a magnetic reconstruction consisting on a spin-flip process at surface: each Mn spin at the surface flips to pair with that of Mn in the subsurface layer. In spite of very little Mn-O charge transfer at surface, the surface behavior is driven by the $e_g$ states due…
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The Mn-terminated (001) surface of the stable anti-ferromagnetic insulating phase of cubic perovskite CaMnO$_3$ is found to undergo a magnetic reconstruction consisting on a spin-flip process at surface: each Mn spin at the surface flips to pair with that of Mn in the subsurface layer. In spite of very little Mn-O charge transfer at surface, the surface behavior is driven by the $e_g$ states due to $d_{xy}$ $\to$ $d_{z^2}$ charge redistribution. These results, based on local spin density theory, give a double exchange like coupling that is driven by $e_g$ character, not additional charge, and may have relevance to CMR materials.
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Submitted 20 September, 1999; v1 submitted 12 July, 1999;
originally announced July 1999.
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Electronic Characteristics of Quasi-2D Metallochloronitrides: Na(x)HfNCL (T_c=25 K)
Authors:
R. Weht,
A. Filippetti,
W. E. Pickett
Abstract:
Local density functional results are presented for the electron-doped metallochloronitrides A(x)ZrNCl and A(x)HfNCl, A = Li or Na, which superconduct up to 25K. The alkali non-stoichiometry is treated in a virtual crystal approximation. The electronic structure is strongly two dimensional, especially in the conduction band region occupied by the carriers, because the states are formed from the i…
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Local density functional results are presented for the electron-doped metallochloronitrides A(x)ZrNCl and A(x)HfNCl, A = Li or Na, which superconduct up to 25K. The alkali non-stoichiometry is treated in a virtual crystal approximation. The electronic structure is strongly two dimensional, especially in the conduction band region occupied by the carriers, because the states are formed from the in-plane orbitals d_xy, d_{x^2-y^2} of the metal ion and the p_x, p_y orbitals of the N ion. We predict a change of behavior at a doping level of x=0.3.
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Submitted 12 March, 1999;
originally announced March 1999.
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Prediction of Ferromagnetic Ground State of NaCl-type FeN
Authors:
Alessio Filippetti,
Warren E. Pickett
Abstract:
Ab-initio results for structural and electronic properties of NaCl-type FeN are presented in a framework of plane-wave and ultrasoft pseudopotentials. Competition among different magnetic ordering is examined. We find the ferromagnetic phase stable overall. Stabilization over the unpolarized phase is obtained by splitting one flat t_2g-type band crossing the Fermi energy. A comparison with CrN i…
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Ab-initio results for structural and electronic properties of NaCl-type FeN are presented in a framework of plane-wave and ultrasoft pseudopotentials. Competition among different magnetic ordering is examined. We find the ferromagnetic phase stable overall. Stabilization over the unpolarized phase is obtained by splitting one flat t_2g-type band crossing the Fermi energy. A comparison with CrN is considered. We find large differences in the properties of the two systems that can be addressed to the smaller ionicity and magnetization of FeN.
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Submitted 2 December, 1998; v1 submitted 18 September, 1998;
originally announced September 1998.
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Competition between Magnetic and Structural Transition in CrN
Authors:
A. Filippetti,
W. E. Pickett,
B. M. Klein
Abstract:
CrN is observed to undergo a paramagnetic to antiferromagnetic transition accompanied by a shear distortion from cubic NaCl-type to orthorhombic structure. Our first-principle plane wave and ultrasoft pseudopotential calculations confirm that the distorted antiferromagnetic phase with spin configuration arranged in double ferromagnetic sheets along [110] is the most stable. Antiferromagnetic ord…
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CrN is observed to undergo a paramagnetic to antiferromagnetic transition accompanied by a shear distortion from cubic NaCl-type to orthorhombic structure. Our first-principle plane wave and ultrasoft pseudopotential calculations confirm that the distorted antiferromagnetic phase with spin configuration arranged in double ferromagnetic sheets along [110] is the most stable. Antiferromagnetic ordering leads to a large depletion of states around Fermi level, but it does not open a gap. Simultaneous occurence of structural distortion and antiferromagnetic order is analyzed.
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Submitted 27 October, 1998; v1 submitted 20 August, 1998;
originally announced August 1998.
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Faceting and stress transfer in the missing-row reconstruction of Ir (110)
Authors:
Alessio Filippetti,
Vincenzo Fiorentini
Abstract:
We present ab initio total energy and stress calculations for the unreconstructed and (2x1)-missing-row reconstructed Ir (110) and Rh (110) surfaces. We use a model based on ab initio results to show that the (Nx1) reconstruction is a faceting transition to a long-wavelength--corrugated (111)-like surface, and find the 3x1 structure to be the most stable for Ir in accordance with experiment. We…
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We present ab initio total energy and stress calculations for the unreconstructed and (2x1)-missing-row reconstructed Ir (110) and Rh (110) surfaces. We use a model based on ab initio results to show that the (Nx1) reconstruction is a faceting transition to a long-wavelength--corrugated (111)-like surface, and find the 3x1 structure to be the most stable for Ir in accordance with experiment. We then use the stress density to analyze the stress increase upon reconstruction, and find it to be due to a changed balance of tensile and compressive contributions in the near-surface region.
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Submitted 14 July, 1998;
originally announced July 1998.
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Anomalous relaxations and chemical trends at III-V nitride non-polar surfaces
Authors:
Alessio Filippetti,
Vincenzo Fiorentini,
Giancarlo Cappellini,
Andrea Bosin
Abstract:
Relaxations at nonpolar surfaces of III-V compounds result from a competition between dehybridization and charge transfer. First principles calculations for the (110) and (10$\bar{1}$0) faces of zincblende and wurtzite AlN, GaN and InN reveal an anomalous behavior as compared with ordinary III-V semiconductors. Additional calculations for GaAs and ZnO suggest close analogies with the latter. We…
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Relaxations at nonpolar surfaces of III-V compounds result from a competition between dehybridization and charge transfer. First principles calculations for the (110) and (10$\bar{1}$0) faces of zincblende and wurtzite AlN, GaN and InN reveal an anomalous behavior as compared with ordinary III-V semiconductors. Additional calculations for GaAs and ZnO suggest close analogies with the latter. We interpret our results in terms of the larger ionicity (charge asymmetry) and bonding strength (cohesive energy) in the nitrides with respect to other III-V compounds, both essentially due to the strong valence potential and absence of $p$ core states in the lighter anion. The same interpretation applies to Zn II-VI compounds.
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Submitted 11 August, 1998; v1 submitted 19 May, 1998;
originally announced May 1998.
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Reconstructions of Ir (110) and (100): an ab initio study
Authors:
Alessio Filippetti,
Vincenzo Fiorentini
Abstract:
Prediction criteria for surface reconstructions are discussed, with reference to ab initio calculations of the (110)-$1\times 2$ missing-row and (100)-$5\times 1$ quasi-hexagonal reconstructions of Ir and Rh.
Prediction criteria for surface reconstructions are discussed, with reference to ab initio calculations of the (110)-$1\times 2$ missing-row and (100)-$5\times 1$ quasi-hexagonal reconstructions of Ir and Rh.
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Submitted 25 September, 1996;
originally announced September 1996.