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Ferroelectricity in epitaxially strained rhombohedral ZrO2 thin films
Authors:
J. P. B. Silva,
R. F. Negrea,
M. C. Istrate,
S. Dutta,
H. Aramberri,
J. Íñiguez,
F. G. Figueiras,
C. Ghica,
K. C. Sekhar,
A. L. Kholkin
Abstract:
Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work reports a novel ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown on (111)- Nb:SrTiO3 substrates by ion-beam sputtering. Structural an…
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Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work reports a novel ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown on (111)- Nb:SrTiO3 substrates by ion-beam sputtering. Structural and ferroelectric characterizations reveal that the (111)-oriented ZrO2 films are under epitaxial compressive strain and display a switchable ferroelectric polarization of about 20.2 μC/cm2 with a coercive field of 1.5 MV/cm. Moreover, the time dependent polarization reversal characteristics of Nb:STO/ZrO2/Au film capacitors exhibit bell-shape curves, a typical feature of ferroelectric films associated with domains reversal. The estimated activation field is comparable to the coercive field obtained from polarization-electric field hysteresis loops. Interestingly, the studied films show ferroelectric behavior per se, i.e., there is no need to apply the wake-up cycle that is essential to induce ferroelectricity in the conventional (orthorhombic) ferroelectric phase of ZrO2. Therefore, the present films have a technologically advantage over the previously studied ferroelectric ZrO2 films, and may be attractive for nanoscale ferroelectric devices.
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Submitted 5 November, 2020;
originally announced November 2020.
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Ferroelectric imprint in annealed Bi0.9La0.1Fe0.9Mn0.1O3 thin films
Authors:
T. T. Carvalho,
F. G. Figueiras,
M. P. F. Garcia,
A. M. Pereira,
J. R. A. Fernandes,
J. Perez de la Cruz,
S. M. S. Pereira,
P. B. Tavares,
A. Almeida,
J. Agostinho Moreira
Abstract:
The present work reports the study of the optimized processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 thin films, grown by RF sputtering on platinum metalized silicon substrates. The combination of deposition at relatively low substrate temperature followed by adequate ex situ annealing leads to thin films with smooth surface morphology and the formation of a high-quality monophasic layer, with the…
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The present work reports the study of the optimized processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 thin films, grown by RF sputtering on platinum metalized silicon substrates. The combination of deposition at relatively low substrate temperature followed by adequate ex situ annealing leads to thin films with smooth surface morphology and the formation of a high-quality monophasic layer, with the (100)c preferable orientation. The annealed films show ferroelectric imprint.
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Submitted 21 March, 2016;
originally announced March 2016.
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Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films
Authors:
D. A. Mota,
Y. Romaguera Barcelay,
A. M. R. Senos,
C. M. Fernandes,
P. B. Tavares,
I. T. Gomes,
P. Sá,
L. Fernandes,
B. G. Almeida,
F. Figueiras,
P. Mirzadeh Vaghefi,
V. S. Amaral,
A. Almeida,
J. Pérez de la Cruz,
J. Agostinho Moreira
Abstract:
Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness ranging from 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate (STO) substrates by pulsed laser deposition, and their structure and morphology characterized at room temperature. Magnetic and electric transport properties of the as-processed thin films reveal an abnormal behavior in the temperature dependent…
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Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness ranging from 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate (STO) substrates by pulsed laser deposition, and their structure and morphology characterized at room temperature. Magnetic and electric transport properties of the as-processed thin films reveal an abnormal behavior in the temperature dependent magnetization M(T) below the antiferrodistortive STO phase transition (TSTO) and also an anomaly in the magnetoresistance and electrical resistivity close to the same temperature. Up to 100 nm LSMO thin films, an in-excess magnetization and pronounced changes in the coercivity are evidenced, achieved through the interface-mediated magnetoelastic coupling with antiferrodistortive domain wall movement occurring below TSTO. Contrarily, for thicker LSMO thin films, above 100 nm, an in-defect magnetization is observed. This reversed behavior can be understood within the emergence in the upper layer of the film, observed by high resolution transmission electron microscopy, of a branched structure needed to relax elastic energy stored in the film which leads to randomly oriented magnetic domain reconstructions. For enough high-applied magnetic fields, as thermodynamic equilibrium is reached, a fully suppression of the anomalous magnetization occurs, wherein the temperature dependence of the magnetization starts to follow the expected Brillouin behavior.
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Submitted 17 February, 2014;
originally announced February 2014.
