Showing 1–3 of 3 results for author: Fierro, J L G

Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics

Authors: Pedro Carlos Feijoo, María Ángela Pampillón, Enrique San Andrés, José Luis G. Fierro

Abstract: Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by alternating the deposition of lower than 0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide was observed after the thermal treatments, with a high increase in the effective permittivity of the dielectric (up to 21). The silicon diffuses into the Gd2-x… ▽ More Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by alternating the deposition of lower than 0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide was observed after the thermal treatments, with a high increase in the effective permittivity of the dielectric (up to 21). The silicon diffuses into the Gd2-xScxO3 films, which show an amorphous character. After the annealing no interfacial silicon oxide is present. CHF-VG curves indicated low hysteresis (55 mV) and a density of interfacial defects of 6e11 eV-1 cm-2. △ Less

Submitted 29 January, 2024; originally announced February 2024.

Comments: 25 pages, 9 figures, 2 tables

Journal ref: Semiconductor Science Technology 28 (2013) 085004

High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

Authors: María Ángela Pampillón, Enrique San Andrés, Pedro Carlos Feijoo, José Luis G. Fierro

Abstract: This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films ob… ▽ More This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films obtained were close to stoichiometry, amorphous and with minimal interfacial regrowth. By fabricating metal-insulator-semiconductor capacitors we found that a moderate temperature annealing is needed to enhance permittivity, which reaches a high value of 32 while keeping moderate leakage. Finally, the feasibility of interface scavenging in this material with Ti gate electrodes is also demonstrated. △ Less

Submitted 29 January, 2024; originally announced January 2024.

Comments: 36 pages, 13 figures

Journal ref: Semiconductor Science and Technology 32 (2017) 035016

Insights into the room temperature magnetism of ZnO/Co3O4 mixtures

Authors: M. S. Martin-Gonzalez, J. F. Fernandez, F. Rubio-Marcos, I. Lorite, J. L. Costa-Kramer, A. Quesada, M. A. Banares, J. L. G. Fierro

Abstract: The origin of room temperature (RT) ferromagneticlike behavior in ZnO-based diluted magnetic semiconductors is still an unclear topic. The present work concentrates on the appearance of RT magnetic moments in just mixed ZnO/Co3O4 mixtures without thermal treatment. In this study, it is shown that the magnetism seems to be related to surface reduction of the Co3O4 nanoparticles, in which, an anti… ▽ More The origin of room temperature (RT) ferromagneticlike behavior in ZnO-based diluted magnetic semiconductors is still an unclear topic. The present work concentrates on the appearance of RT magnetic moments in just mixed ZnO/Co3O4 mixtures without thermal treatment. In this study, it is shown that the magnetism seems to be related to surface reduction of the Co3O4 nanoparticles, in which, an antiferromagnetic Co3O4 nanoparticle (core) is surrounded by a CoO-like shell. This singular superficial magnetism has also been found in other mixtures with semiconductors such as TiO2 and insulators such as Al2O3. △ Less

Submitted 12 January, 2009; originally announced January 2009.

Journal ref: JOURNAL OF APPLIED PHYSICS 103, 083905 (2008)