Showing 1–7 of 7 results for author: Fields, S S

Non-Altermagnetic Origin of Exchange Bias Behaviors in Incoherent RuO$_2$/Fe Bilayer Heterostructures

Authors: Shelby S. Fields, Joseph C. Prestigiacomo, Cory D. Cress, Nicholas G. Combs, Olaf van 't Erve, Patrick G. Callahan, Keith E. Knipling, Michelle E. Jamer, Frank M. Abel, Feng Ye, Arianna Minelli, Zachary J. Morgan, Haile Ambaye, Masaaki Matsuda, Avishek Maity, Valeria Lauter, Steven P. Bennett

Abstract: Initially identified as a promising altermagnetic (AM) candidate, rutile RuO$_2$ has since become embroiled in controversy due to contradictory findings of modeling and measurements of the magnetic properties of bulk crystals and thin films. For example, despite observations of a bulk non-magnetic state using density functional theory, neutron scattering, and muon spin resonance measurements, patt… ▽ More Initially identified as a promising altermagnetic (AM) candidate, rutile RuO$_2$ has since become embroiled in controversy due to contradictory findings of modeling and measurements of the magnetic properties of bulk crystals and thin films. For example, despite observations of a bulk non-magnetic state using density functional theory, neutron scattering, and muon spin resonance measurements, patterned RuO$_2$ Hall bars and film heterostructures display magnetotransport signatures of magnetic ordering. Among the characteristics routinely cited as evidence for AM is the observation of exchange bias (EB) in an intimately contacted Fe-based ferromagnetic (FM) layer, which can arise due to interfacial coupling with a compensated antiferromagnet. Within this work, the origins of this EB coupling in Ru-capped RuO$_2$/Fe bilayers are investigated using polarized neutron diffraction, polarized neutron reflectometry, cross-sectional transmission electron microscopy, and super conducting quantum interference device measurements. These experiments reveal that the EB behavior is driven by the formation of an iron oxide interlayer containing Fe$_3$O$_4$ that undergoes a magnetic transition and pins interfacial moments within Fe at low temperature. These findings are confirmed by comparable measurements of Ni-based heterostructures, which do not display EB coupling, as well as magnetometry of additional Fe/Ru bilayers that display oxide-driven EB coupling despite the absence of the epitaxial RuO$_2$ layer. While these results do not directly refute the possibility of AM ordering in RuO$_2$ thin films, they reveal that EB, and related magnetotransport phenomena, cannot alone be considered evidence of this characteristic in the rutile structure due to interfacial chemical disorder. △ Less

Submitted 26 September, 2025; originally announced September 2025.

Comments: 20 pages, 7 figures

Probing Magnetic Properties of RuO$_{2}$ Heterostructures Through the Ferromagnetic Layer

Authors: Frank M. Abel, Subhash Bhatt, Shelby S. Fields, Vinay Sharma, Dai Q. Ho, Daniel Wines, D. Quang To, Joseph C. Prestigiacomo, Tehseen Adel, Riccardo Torsi, Maria F. Munoz, David T. Plouff, Xinhao Wang, Brian Donovan, Don Heiman, Gregory M. Stephen, Adam L. Friedman, Garnett W. Bryant, Anderson Janotti, Michelle E. Jamer, Angela R. Hight Walker, John Q. Xiao, Steven P. Bennett

Abstract: RuO$_{2}$ has been proposed as the prototypical altermagnetic material. However, several reports have recently questioned its intrinsic magnetic ordering, leading to conflicting findings, especially in thin film heterostructures pointing to possible interface effects being convoluted with supposed antiferromagnetic/altermagnetic signatures. Here, extensive magnetometry measurements were performed… ▽ More RuO$_{2}$ has been proposed as the prototypical altermagnetic material. However, several reports have recently questioned its intrinsic magnetic ordering, leading to conflicting findings, especially in thin film heterostructures pointing to possible interface effects being convoluted with supposed antiferromagnetic/altermagnetic signatures. Here, extensive magnetometry measurements were performed on two independently grown thin film heterostructures of RuO$_{2}$ interfaced with either NiFe or Fe acting as the ferromagnetic layer. Below about 15 K, both samples exhibit exchange bias fields when cooled to approximately 2 K in a $+$1 T field, and a spin transitional feature is observed around 31 K. Magneto-Raman measurements on RuO$_{2}$ thin films only reveal a magnon mode when there is a NiFe layer, suggesting that RuO$_{2}$ does not intrinsically possess long range magnetic ordering.. When in contact with a ferromagnet, RuO$_2$ displays effects that could be ascribed to antiferromagnetism. However, the lack of intrinsic magnon modes points toward possible diffusion between the layers or spin disorder at the interface as seen by density functional theory (DFT) calculations. △ Less

Submitted 20 August, 2025; originally announced August 2025.

Effects of altermagnetic order, strain and doping in RuO$_2$

Authors: Darshana Wickramaratne, Marc Currie, Shelby S. Fields, Cory D. Cress, Steven P. Bennett

Abstract: RuO$_2$, one of the most widely studied transition metal oxides, was recently predicted to host a novel form of collinear magnetic order referred to as altermagnetism. In this study we combine experiment (reflectance, transmittance, ellipsometry and Raman measurements) and first-principles calculations to elucidate the potential role of altermagnetic order, strain and doping on the optical and vib… ▽ More RuO$_2$, one of the most widely studied transition metal oxides, was recently predicted to host a novel form of collinear magnetic order referred to as altermagnetism. In this study we combine experiment (reflectance, transmittance, ellipsometry and Raman measurements) and first-principles calculations to elucidate the potential role of altermagnetic order, strain and doping on the optical and vibrational properties of RuO$_2$ grown on TiO$_2$ (001), (101) and (110) substrates. Our combined experimental and theoretical results point toward a nonmagnetic ground state as the most consistent description of the optical and vibrational properties of bulk RuO$_2$. RuO$_2$ strained to TiO$_2$ (001) remains nonmagnetic in our calculations. Straining to TiO$_2$ (110) stabilizes ferromagnetic and altermagnetic states that are nearly degenerate and both lower in energy than the nonmagnetic state. The relative energetic ordering of these states is highly sensitive to the level of strain and the choice of exchange-correlation approximation. △ Less

Submitted 29 August, 2025; v1 submitted 12 February, 2025; originally announced February 2025.

Comments: 9 pages, 5 figures, fixes a typo in Table 1 and Fig 1(c) in the first version

Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films

Authors: Sara Bey, Shelby S. Fields, Nicholas G. Combs, Bence G. Márkus, Dávid Beke, Jiashu Wang, Anton V. Ievlev, Maksym Zhukovskyi, Tatyana Orlova, László Forró, Steven P. Bennett, Xinyu Liu, Badih A. Assaf

Abstract: The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this… ▽ More The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this study, we demonstrate that the AHE in altermagnetic α-MnTe grown on GaAs(111) substrates can be "written on-demand" by cooling the material under an in-plane magnetic field. The magnetic field controls the strength and the coercivity of the AHE. Remarkably, this control is unique to α-MnTe grown on GaAs and is absent in α-MnTe grown on SrF2. The tunability that we reveal challenges our current understanding of the symmetry-allowed AHE in this material and opens new possibilities for the design of altermagnetic spintronic devices. △ Less

Submitted 6 September, 2024; originally announced September 2024.

Ferroelectricity in Hafnia Controlled via Surface Electrochemical State

Authors: Kyle P. Kelley, Anna N. Morozovska, Eugene A. Eliseev, Yongtao Liu, Shelby S. Fields, Samantha T. Jaszewski, Takanori Mimura, Jon F. Ihlefeld, Sergei V. Kalinin

Abstract: Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions s… ▽ More Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions suggests that ferroelectricity in these materials is strongly coupled with additional mechanisms, with possible candidates including the ionic subsystem or strain. Here we argue that the properties of these materials emerge due to the interplay between the bulk competition between ferroelectric and structural instabilities, similar to that in classical antiferroelectrics, coupled with non-local screening mediated by the finite density of states at surfaces and internal interfaces. Via decoupling of electrochemical and electrostatic controls realized via environmental and ultra-high vacuum PFM, we show that these materials demonstrate a rich spectrum of ferroic behaviors including partial pressure- and temperature-induced transitions between FE and AFE behaviors. These behaviors are consistent with an antiferroionic model and suggest novel strategies for hafnia-based device optimization. △ Less

Submitted 25 July, 2022; originally announced July 2022.

Exploring leakage in dielectric films via automated experiment in scanning probe microscopy

Authors: Yongtao Liu, Shelby S. Fields, Takanori Mimura, Kyle P. Kelley, Jon F. Ihlefeld, Sergei V. Kalinin

Abstract: Electronic conduction pathways in dielectric thin films are explored using automated experiments in scanning probe microscopy (SPM). Here, we use large field of view scanning to identify the position of localized conductive spots and develop a SPM workflow to probe their dynamic behavior at higher spatial resolution as a function of time, voltage, and scanning process in an automated fashion. Usin… ▽ More Electronic conduction pathways in dielectric thin films are explored using automated experiments in scanning probe microscopy (SPM). Here, we use large field of view scanning to identify the position of localized conductive spots and develop a SPM workflow to probe their dynamic behavior at higher spatial resolution as a function of time, voltage, and scanning process in an automated fashion. Using this approach, we observe the variable behaviors of the conductive spots in a 20 nm thick ferroelectric Hf0.54Zr0.48O2 film, where conductive spots disappear and reappear during continuous scanning. There are also new conductive spots that appear during scanning. The automated workflow is universal and can be integrated into a wide range of microscopy techniques, including SPM, electron microscopy, optical microscopy, and chemical imaging. △ Less

Submitted 18 November, 2021; originally announced November 2021.

Comments: 12 pages, 6 figures

Thermal Stability of Hafnium Zirconium Oxide on Transition Metal Dichalcogenides

Authors: Maria Gabriela Sales, Samantha T. Jaszewski, Shelby S. Fields, Jon F. Ihlefeld, Stephen J. McDonnell

Abstract: Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interface. In this work, the thermal stability of this interface is explored by first depositing hafnium zirconium oxide (HZO) directly on geological MoS2 an… ▽ More Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interface. In this work, the thermal stability of this interface is explored by first depositing hafnium zirconium oxide (HZO) directly on geological MoS2 and as-grown WSe2, followed by sequential annealing in ultra-high vacuum (UHV) over a range of temperatures (400-800 °C), and examining the interface through X-ray photoelectron spectroscopy (XPS). We show that the nucleation and stability of HZO grown through atomic layer deposition (ALD) varied depending on functionalization of the TMDC, and the deposition conditions can cause tungsten oxidation in WSe2. It was observed that HZO deposited on non-functionalized MoS2 was unstable and volatile upon annealing, while HZO on functionalized MoS2 was stable in the 400-800 °C range. The HZO/WSe2 interface was stable until 700 °C, after which Se began to evolve from the WSe2. In addition, there is evidence of oxygen vacancies in the HZO film being passivated at high temperatures. Lastly, X-ray diffraction (XRD) was used to confirm crystallization of the HZO within the temperature range studied. △ Less

Submitted 30 July, 2020; originally announced July 2020.

Comments: 33 pages, 11 figures