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Synthesis, Optoelectronic Properties, and Charge Carrier Dynamics of Colloidal Quasi-two-dimensional Cs3Bi2I9 Perovskite Nanosheets
Authors:
Sushant Ghimire,
Chris Rehhagen,
Saskia Fiedler,
Rostyslav Lesyuk,
Stefan Lochbrunner,
Christian Klinke
Abstract:
Non-toxicity and stability make two-dimensional (2D) bismuth halide perovskites better alternatives to lead-based ones for optoelectronic applications and catalysis. In this work, we synthesize sub-micron size colloidal quasi-2D Cs3Bi2I9 perovskite nanosheets and study their generation and relaxation of charge carriers. Steady-state absorption spectroscopy reveals an indirect bandgap of 2.07 eV, w…
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Non-toxicity and stability make two-dimensional (2D) bismuth halide perovskites better alternatives to lead-based ones for optoelectronic applications and catalysis. In this work, we synthesize sub-micron size colloidal quasi-2D Cs3Bi2I9 perovskite nanosheets and study their generation and relaxation of charge carriers. Steady-state absorption spectroscopy reveals an indirect bandgap of 2.07 eV, which is supported by the density functional theory calculated band structure. The nanosheets do not show detectable photoluminescence at room temperature at band-edge excitation which is attributed to the indirect bandgap. However, cathodoluminescence spanning a broad range from 500 nm to 750 nm with an asymmetric and Stokes-shifted spectrum is observed, indicating the phonon- and trap-assisted recombination. We study the ultrafast charge carrier dynamics in Cs3Bi2I9 nanosheets using a femtosecond transient absorption spectroscopy. The samples are excited with pump energies higher than their bandgap, and the results are interpreted in terms of hot carrier generation (<1 ps), thermalization with local phonons (~1 ps), and cooling (>30 ps). Further, a relatively slow relaxation of excitons (>3 ns) at the band edge suggests the formation of stable polarons which decay nonradiatively by emitting phonons.
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Submitted 10 February, 2023;
originally announced February 2023.
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Sub-to-super-Poissonian photon statistics in cathodoluminescence of color center ensembles in isolated diamond crystals
Authors:
Saskia Fiedler,
Sergii Morozov,
Danylo Komisar,
Evgeny A. Ekimov,
Liudmila F. Kulikova,
Valery A. Davydov,
Viatcheslav N. Agafonov,
Shailesh Kumar,
Christian Wolff,
Sergey I. Bozhevolnyi,
N. Asger Mortensen
Abstract:
Impurity-vacancy centers in diamond offer a new class of robust photon sources with versatile quantum properties. While individual color centers commonly act as single-photon sources, their ensembles have been theoretically predicted to have tunable photon-emission statistics. Importantly, the particular type of excitation affects the emission properties of a color center ensemble within a diamond…
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Impurity-vacancy centers in diamond offer a new class of robust photon sources with versatile quantum properties. While individual color centers commonly act as single-photon sources, their ensembles have been theoretically predicted to have tunable photon-emission statistics. Importantly, the particular type of excitation affects the emission properties of a color center ensemble within a diamond crystal. While optical excitation favors non-synchronized excitation of color centers within an ensemble, electron-beam excitation can synchronize the emitters and thereby provides a control of the second-order correlation function $g_2(0)$. In this letter, we demonstrate experimentally that the photon stream from an ensemble of color centers can exhibit $g_2(0)$ both above and below unity. Such a photon source based on an ensemble of few color centers in a diamond crystal provides a highly tunable platform for informational technologies operating at room temperature.
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Submitted 7 February, 2023;
originally announced February 2023.
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Disentangling cathodoluminescence spectra in nanophotonics: particle eigenmodes vs transition radiation
Authors:
Saskia Fiedler,
P. Elli Stamatopoulou,
Artyom Assadillayev,
Christian Wolff,
Hiroshi Sugimoto,
Minoru Fujii,
N. Asger Mortensen,
Søren Raza,
Christos Tserkezis
Abstract:
Cathodoluminescence spectroscopy performed in an electron microscope has proven a versatile tool for analysing the near- and far-field optical response of plasmonic and dielectric nanostructures. Nevertheless, the transition radiation produced by electron impact is often disregarded in the interpretation of the spectra recorded from resonant nanoparticles. Here we show, experimentally and theoreti…
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Cathodoluminescence spectroscopy performed in an electron microscope has proven a versatile tool for analysing the near- and far-field optical response of plasmonic and dielectric nanostructures. Nevertheless, the transition radiation produced by electron impact is often disregarded in the interpretation of the spectra recorded from resonant nanoparticles. Here we show, experimentally and theoretically, that transition radiation can by itself generate distinct resonances which, depending on the time of flight of the electron beam inside the particle, can result from constructive or destructive interference in time. Superimposed on the eigenmodes of the investigated structures, these resonances can distort the recorded spectrum and lead to potentially erroneous assignment of modal characters to the spectral features. We develop an intuitive analogy that helps distinguish between the two contributions. As an example, we focus on the case of silicon nanospheres, and show that our analysis facilitates the unambiguous interpretation of experimental measurements on Mie-resonant nanoparticles.
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Submitted 14 March, 2022; v1 submitted 9 December, 2021;
originally announced December 2021.
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Brobdingnagian photon bunching in cathodoluminescence of excitons in WS$_2$ monolayer
Authors:
Saskia Fiedler,
Sergii Morozov,
Leonid Iliushyn,
Sergejs Boroviks,
Martin Thomaschewski,
Jianfang Wang,
Timothy J. Booth,
Nicolas Stenger,
Christian Wolff,
N. Asger Mortensen
Abstract:
Cathodoluminescence spectroscopy in conjunction with second-order auto-correlation measurements of $g_2(τ)$ allows to extensively study the synchronization of quantum light sources in low-dimensional structures. Co-existing excitons in two-dimensional transition metal dichalcogenide monolayers provide a great source of identical quantum emitters which can be simultaneously excited by an electron.…
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Cathodoluminescence spectroscopy in conjunction with second-order auto-correlation measurements of $g_2(τ)$ allows to extensively study the synchronization of quantum light sources in low-dimensional structures. Co-existing excitons in two-dimensional transition metal dichalcogenide monolayers provide a great source of identical quantum emitters which can be simultaneously excited by an electron. In this article, we demonstrate large photon bunching with $g_2(0)$ up to $156\pm16$ of a tungsten disulfide monolayer, exhibiting a strong dependence on the electron-beam current density. To further improve the excitation synchronization and the electron-emitter interaction, we show exemplary that the careful selection of a simple and compact geometry -- a thin, monocrystalline gold nanodisk -- can be used to realize a record-high bunching $g_2(0)$ of up to $2152\pm236$. This approach to control the electron excitation of excitons in a \ce{WS2} monolayer allows for the synchronization of quantum emitters in an ensemble, which is important to further advance quantum information processing and computing technologies.
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Submitted 15 February, 2023; v1 submitted 15 November, 2021;
originally announced November 2021.
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The importance of substrates for the visibility of "dark" plasmonic modes
Authors:
Saskia Fiedler,
Søren Raza,
Ruoqi Ai,
Jianfang Wang,
Kurt Busch,
Nicolas Stenger,
N. Asger Mortensen,
Christian Wolff
Abstract:
Dark plasmonic modes have interesting properties, such as a longer lifetime and a narrower linewidth than their radiative counterpart, as well as little to no radiative losses. However, they have not been extensively studied yet due to their optical inaccessibility. Using electron-energy loss (EEL) and cathodoluminescence (CL) spectroscopy, the dark radial breathing modes (RBMs) in thin, monochrys…
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Dark plasmonic modes have interesting properties, such as a longer lifetime and a narrower linewidth than their radiative counterpart, as well as little to no radiative losses. However, they have not been extensively studied yet due to their optical inaccessibility. Using electron-energy loss (EEL) and cathodoluminescence (CL) spectroscopy, the dark radial breathing modes (RBMs) in thin, monochrystalline gold nanodisks are systematically investigated in this work. It is found that the RBMs can be detected in a CL set-up despite only collecting the far-field. Their visibility in CL is attributed to the breaking of the mirror symmetry by the high-index substrate, creating an effective dipole moment. The outcoupling into the far-field is demonstrated to be enhanced by a factor of 4 by increasing the thickness of the supporting SiN membrane from 5 to 50 nm due to the increased net electric dipole moment in the substrate. Furthermore, it is shown that the resonance energy of RBMs can be easily tuned by varying the diameter of the nanodisk, making them promising candidates for nanophotonic applications.
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Submitted 25 February, 2020;
originally announced February 2020.
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Bright Room-Temperature Single Photon Emission from Defects in Gallium Nitride
Authors:
Amanuel M. Berhane,
Kwang-Yong Jeong,
Zoltán Bodrog,
Saskia Fiedler,
Tim Schröder,
Noelia Vico Triviño,
Tomás Palacios,
Adam Gali,
Milos Toth,
Dirk Englund,
Igor Aharonovich
Abstract:
Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature…
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Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature photonic integrated circuit technologies. Hence, there is great interest in identifying quantum emitters in technologically mature semiconductors that are compatible with suitable heteroepitaxies. Here, we demonstrate robust single photon emitters based on defects in gallium nitride (GaN), the most established and well understood semiconductor that can emit light over the entire visible spectrum. We show that the emitters have excellent photophysical properties including a brightness in excess of 500x10^3 counts/s. We further show that the emitters can be found in a variety of GaN wafers, thus offering reliable and scalable platform for further technological development. We propose a theoretical model to explain the origin of these emitters based on cubic inclusions in hexagonal gallium nitride. Our results constitute a feasible path to scalable, integrated on-chip quantum technologies based on GaN.
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Submitted 15 October, 2016;
originally announced October 2016.
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Termination-dependent surface properties in the giant-Rashba semiconductors BiTeX (X = Cl, Br, I)
Authors:
Sebastian Fiedler,
Thomas Bathon,
Sergey V. Eremeev,
Oleg E. Tereshchenko,
Konstantin A. Kokh,
Evgueni V. Chulkov,
Paolo Sessi,
Hendrik Bentmann,
Matthias Bode,
Friedrich Reinert
Abstract:
The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tu…
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The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy (STM), photoelectron spectroscopy (ARPES, XPS) and density functional theory (DFT) calculations to systematically investigate the structural and electronic properties of BiTeX(0001) surfaces. For X = Cl, Br we observe macroscopic single-terminated surfaces. We discuss chemical characteristics among the three materials in terms of bonding character, surface electronic structure, and surface morphology.
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Submitted 20 November, 2015;
originally announced November 2015.
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The importance of Charge Fluctuations for the Topological Phase in SmB$_6$
Authors:
Chul-Hee Min,
P. Lutz,
S. Fiedler,
B. Y. Kang,
B. K. Cho,
H. -D. Kim,
H. Bentmann,
F. Reinert
Abstract:
The discovery of topologically non-trivial states in band insulators has induced an extensive search for topological phase in strongly correlated electron systems. In particular, samarium hexaboride (SmB$_6$) has drawn much attention as it might represent a new class of condensed matter called topological Kondo insulator. Kondo insulators (KI) can have non-trivial Z$_2$ topology because the energy…
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The discovery of topologically non-trivial states in band insulators has induced an extensive search for topological phase in strongly correlated electron systems. In particular, samarium hexaboride (SmB$_6$) has drawn much attention as it might represent a new class of condensed matter called topological Kondo insulator. Kondo insulators (KI) can have non-trivial Z$_2$ topology because the energy gap opens at the Fermi energy ($E_F$) by hybridization between an odd- parity renormalized $f$ band and an even- parity conduction $d$ band. However, the characteristics of SmB$_6$ deviate from the conventional KI because its gap is insensitive to doping and pressure. Thus, it is unclear what makes the gap of SmB$_6$ different from that of KI, and how the band inversion features occur. In this manuscript, we demonstrate the importance of charge fluctuations in SmB$_6$. Our angle-resolved photoemission spectroscopy (ARPES) results reveal that with decreasing temperature the bottom of the $d$-$f$ hybridized band at the $\bar{\text{X}}$ point gradually shifts from below to above $E_F$. This shift accompanies a redistribution of spectral weight from the upper to the lower quasiparticle band, and reflects the change in both carrier density and the number of localized $f$ electron. Moreover, because this hybridized band is predicted to have odd parity and to induce a non-trivial $Z_{2}$ topology, we compare our ARPES spectra with theoretical surface band structures and find signatures of topological surface states. Therefore, our results indicate that SmB$_6$ is a charge fluctuating topological insulator having the odd-parity hybridized band above $E_F$ at the $X$ point. This demonstrates that the charge fluctuations do not only drive the insulating bulk phase but also the non-trivial topological phase.
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Submitted 12 December, 2013; v1 submitted 6 December, 2013;
originally announced December 2013.
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Single Dirac-cone on the Cs-covered topological insulator surface Sb2Te3(0001)
Authors:
Christoph Seibel,
Henriette Maaß,
Minoru Ohtaka,
Sebastian Fiedler,
Christian Jünger,
Chul-Hee Min,
Hendrik Bentmann,
Kazuyuki Sakamoto,
Friedrich Reinert
Abstract:
Using angle-resolved photoelectron spectroscopy we investigate the surface electronic structure of the three-dimensional topological insulator (TI) Sb2Te3(0001). Our data show the presence of a topological surface state in the bulk energy gap with the Dirac-point located above the Fermi level. The adsorption of Cs-atoms on Sb2Te3(0001) gives rise to a downward energy shift of the electronic valenc…
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Using angle-resolved photoelectron spectroscopy we investigate the surface electronic structure of the three-dimensional topological insulator (TI) Sb2Te3(0001). Our data show the presence of a topological surface state in the bulk energy gap with the Dirac-point located above the Fermi level. The adsorption of Cs-atoms on Sb2Te3(0001) gives rise to a downward energy shift of the electronic valence band states which saturates at a value of ~200 meV. For the saturation coverage the Dirac-point of the linearly dispersive surface state resides in close proximity to the Fermi level. The electronic structure of the Cs/Sb2Te3 interface therefore considerably deviates from previously studied metal-TI interfaces based on the isostructural compound Bi2Se3 which points to the importance of atomic composition in these hetero systems.
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Submitted 19 September, 2012;
originally announced September 2012.