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Showing 1–2 of 2 results for author: Ferreira, P J

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  1. arXiv:2206.06250  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph

    Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices

    Authors: Marcel S. Claro, Juan P. Martínez-Pastor, Alejandro Molina-Sánchez, Khalil El Hajraoui, Justyna Grzonka, Hamid Pashaei Adl, David Fuertes Marrón, Paulo J. Ferreira, Alex Bondarchuk, Sascha Sadewasser

    Abstract: Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devi… ▽ More

    Submitted 11 October, 2022; v1 submitted 13 June, 2022; originally announced June 2022.

    Comments: 16 Pages, 5 figures. Supplementary Information included in the end (+10 pages, +10 Figures, + 2 Tables). Partially presented at 21st ICMBE - September 2021

  2. arXiv:2005.10819  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph

    Wafer-scale fabrication of two-dimensional beta-In2Se3 photodetectors

    Authors: Marcel S. Claro, Justyna Grzonka, Nicoleta Nicoara, Paulo J. Ferreira, Sascha Sadewasser

    Abstract: The epitaxial growth of two-dimensional (2D) $β-In_2Se_3$ material was obtained over 2-inches c-sapphire wafers using molecular beam epitaxy (MBE). Excellent quality of thick (90 nm) and very thin films, down to two quintuple layers (2 nm), was confirmed by x-ray diffraction (XRD), Raman spectroscopy, and aberration-corrected scanning transmission electron microscopy (ac-STEM). Wafer-scale fabrica… ▽ More

    Submitted 30 November, 2020; v1 submitted 21 May, 2020; originally announced May 2020.

    Journal ref: Advanced Optical Materials, 2020, 2001034