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Matter-wave interferometers using TAAP rings
Authors:
Patrick Navez,
Saurabh Pandey,
Hector Mas,
Konstantinos Poulios,
Thomas Fernholz,
Wolf von Klitzing
Abstract:
We present two novel matter-wave Sagnac interferometers based on ring- shaped time-averaged adiabatic potentials (TAAP). For both the atoms are put into a superposition of two different spin states and manipulated independently using elliptically polarized rf-fields. In the first interferometer the atoms are accelerated by spin-state-dependent forces and then travel around the ring in a matter-wav…
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We present two novel matter-wave Sagnac interferometers based on ring- shaped time-averaged adiabatic potentials (TAAP). For both the atoms are put into a superposition of two different spin states and manipulated independently using elliptically polarized rf-fields. In the first interferometer the atoms are accelerated by spin-state-dependent forces and then travel around the ring in a matter-wave guide. In the second one the atoms are fully trapped during the entire interferometric sequence and are moved around the ring in two spin-state-dependent "buckets". Corrections to the ideal Sagnac phase are investigated for both cases. We experimentally demonstrate the key atom-optical elements of the interferometer such as the independent manipulation of two different spin states in the ring-shaped potentials under identical experimental conditions.
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Submitted 5 April, 2016;
originally announced April 2016.
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Adiabatic potentials using multiple radio frequencies
Authors:
T. Morgan,
Th. Busch,
T. Fernholz
Abstract:
Adiabatic radio frequency (RF) potentials are powerful tools for creating advanced trapping geometries for ultra-cold atoms. While the basic theory of RF trapping is well understood, studies of more complicated setups involving multiple resonant frequencies in the limit where their effects cannot be treated independently are rare. Here we present an approach based on Floquet theory and show that i…
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Adiabatic radio frequency (RF) potentials are powerful tools for creating advanced trapping geometries for ultra-cold atoms. While the basic theory of RF trapping is well understood, studies of more complicated setups involving multiple resonant frequencies in the limit where their effects cannot be treated independently are rare. Here we present an approach based on Floquet theory and show that it offers significant corrections to existing models when two RF frequencies are near degenerate. Furthermore it has no restrictions on the dimension, the number of frequencies or the orientation of the RF fields. We show that the added degrees of freedom can, for example, be used to create a potential that allows for easy creation of ring vortex solitons.
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Submitted 11 May, 2014;
originally announced May 2014.
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Three-dimensional character of atom-chip-based rf-dressed potentials
Authors:
J. J. P. van Es,
S. Whitlock,
T. Fernholz,
A. H. van Amerongen,
N. J. van Druten
Abstract:
We experimentally investigate the properties of radio-frequency-dressed potentials for Bose-Einstein condensates on atom chips. The three-dimensional potential forms a connected pair of parallel waveguides. We show that rf-dressed potentials are robust against the effect of small magnetic-field variations on the trap potential. Long-lived dipole oscillations of condensates induced in the rf-dres…
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We experimentally investigate the properties of radio-frequency-dressed potentials for Bose-Einstein condensates on atom chips. The three-dimensional potential forms a connected pair of parallel waveguides. We show that rf-dressed potentials are robust against the effect of small magnetic-field variations on the trap potential. Long-lived dipole oscillations of condensates induced in the rf-dressed potentials can be tuned to a remarkably low damping rate. We study a beam-splitter for Bose-Einstein condensates and show that a propagating condensate can be dynamically split in two vertically separated parts and guided along two paths. The effect of gravity on the potential can be tuned and compensated for using a rf-field gradient.
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Submitted 4 February, 2008;
originally announced February 2008.
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Fully permanent magnet atom chip for Bose-Einstein condensation
Authors:
T. Fernholz,
R. Gerritsma,
S. Whitlock,
I. Barb,
R. J. C. Spreeuw
Abstract:
We describe a self-biased, fully permanent magnet atom chip used to study ultracold atoms and to produce a Bose-Einstein condensate (BEC). The magnetic trap is loaded efficiently by adiabatic transport of a magnetic trap via the application of uniform external fields. Radio frequency spectroscopy is used for in-trap analysis and to determine the temperature of the atomic cloud. The formation of…
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We describe a self-biased, fully permanent magnet atom chip used to study ultracold atoms and to produce a Bose-Einstein condensate (BEC). The magnetic trap is loaded efficiently by adiabatic transport of a magnetic trap via the application of uniform external fields. Radio frequency spectroscopy is used for in-trap analysis and to determine the temperature of the atomic cloud. The formation of a Bose-Einstein condensate is observed in time of flight images and as a narrow peak appearing in the radio frequency spectrum.
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Submitted 24 March, 2008; v1 submitted 17 May, 2007;
originally announced May 2007.
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Atom Chips: Fabrication and Thermal Properties
Authors:
S. Groth,
P. Krüger,
S. Wildermuth,
R. Folman,
T. Fernholz,
D. Mahalu,
I. Bar-Joseph,
J. Schmiedmayer
Abstract:
Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1$μ$m. At room temperature, thin wires can carry more than 10$^7$A/cm$^2$ current density and voltages of more than 500V. Extensive test mea…
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Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1$μ$m. At room temperature, thin wires can carry more than 10$^7$A/cm$^2$ current density and voltages of more than 500V. Extensive test measurements for different substrates and metal thicknesses (up to 5 $μ$m) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips.
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Submitted 6 April, 2004;
originally announced April 2004.
