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Magnon Valve Effect Between Two Magnetic Insulators
Authors:
H. Wu,
L. Huang,
C. Fang,
B. S. Yang,
C. H. Wan,
G. Q. Yu,
J. F. Feng,
H. X. Wei,
X. F. Han
Abstract:
The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient i…
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The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves.
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Submitted 23 January, 2018; v1 submitted 19 January, 2018;
originally announced January 2018.
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Giant tunnel magnetoresistance with a single magnetic phase-transition electrode
Authors:
Jia Zhang,
X. Z. Chen,
C. Song,
J. F. Feng,
H. X. Wei,
Jing-Tao Lü
Abstract:
Magnetic phase transition tunnel magnetoresistance (MPT-TMR) effect with a single magnetic electrode has been investigated by first-principles calculations. The calculations show that the MPT-TMR of FeRh/MgO/Cu tunnel junction can be as high as hundreds of percent when the magnetic structure of FeRh changes from G-type antiferromagnetic (GAFM) to ferromagnetic order. This new type of MPT-TMR may b…
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Magnetic phase transition tunnel magnetoresistance (MPT-TMR) effect with a single magnetic electrode has been investigated by first-principles calculations. The calculations show that the MPT-TMR of FeRh/MgO/Cu tunnel junction can be as high as hundreds of percent when the magnetic structure of FeRh changes from G-type antiferromagnetic (GAFM) to ferromagnetic order. This new type of MPT-TMR may be superior to the tunnel anisotropic magnetoresistance because of its huge magneto-resistance effect and similar structural simplicity. The main mechanism for the giant MPT-TMR can be attributed to the formation of interface resonant states at GAFM-FeRh/MgO interface. A direct FeRh/MgO interface is found to be necessary for achieving high MPT-TMR experimentally. Moreover, we find the FeRh/MgO interface with FeRh in ferromagnetic phase has nearly full spin-polarization due to the negligible majority transmission and significantly different Fermi surface of two spin channels. Thus, it may act as a highly efficient and tunable spin-injector. In addition, electric field driven MPT of FeRh-based hetero-magnetic nanostructures can be utilized to design various energy efficient tunnel junction structures and the corresponding lower power consumption devices. Our results will stimulate further experimental investigations of MPT-TMR and other fascinating phenomenon of FeRh-based tunnel junctions that may be promising in antiferromagnetic spintronics.
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Submitted 6 March, 2018; v1 submitted 3 September, 2017;
originally announced September 2017.
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Tunneling anisotropic magnetoresistance driven by magnetic phase transition
Authors:
X. Z. Chen,
J. F. Feng,
Z. C. Wang,
J. Zhang,
X. Y. Zhong,
C. Song,
L. Jin,
B. Zhang,
F. Li,
M. Jiang,
Y. Z. Tan,
X. J. Zhou,
G. Y. Shi,
X. F. Zhou,
X. D. Han,
S. C. Mao,
Y. H. Chen,
X. F. Han,
F. Pan
Abstract:
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here we report an alternative approach to o…
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The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in alfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one alfa-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the alfa-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.
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Submitted 21 June, 2017;
originally announced June 2017.
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Spin-flip noise due to nonequilibrium spin accumulation
Authors:
Liang Liu,
Jiasen Niu,
Huiqiang Guo,
Jian Wei,
D. L. Li,
J. F. Feng,
X. F. Han,
J. M. D. Coey,
X. -G. Zhang
Abstract:
When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance…
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When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance fluctuations ($S_R$) which a passively applied current ($I$) converts to measurable voltage fluctuations ($S_{V}=I^{2}S_{R}$). We treat the LFN associated with spin accumulation as a nonequilibrium effect, and find that the noise power can be fitted in terms of the spin-polarized current by $S_{I}f=aI\coth(\frac{I}{b})-ab$, resembling the form of the shot noise for a tunnel junction, but with current now taking the role of the bias voltage, and spin-flip probability taking the role of tunneling probability.
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Submitted 22 December, 2015;
originally announced December 2015.
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Low frequency noise peak near magnon emission energy in magnetic tunnel junctions
Authors:
Liang Liu,
Li Xiang,
Huiqiang Guo,
Jian Wei,
D. L. Li,
Z. H. Yuan,
J. F. Feng,
X. F. Han,
J. M. D. Coey
Abstract:
We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlO$_{x}$/CoFeB MTJs, enhanced LF noise is observed at bias voltage aroun…
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We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlO$_{x}$/CoFeB MTJs, enhanced LF noise is observed at bias voltage around magnon emission energy, forming a peak in the bias dependence of noise power spectra density, independent of magnetic configurations. The noise peak is much higher and broader for unannealed AlO$_{x}$-based MTJ, and besides Lorentzian shape noise spectra in the frequency domain, random telegraph noise (RTN) is visible in the time traces. During repeated measurements the noise peak reduces and the RTN becomes difficult to resolve, suggesting defects being annealed. The Lorentzian shape noise spectra can be fitted with bias-dependent activation of RTN, with the attempt frequency in the MHz range, consistent with magnon dynamics. These findings suggest magnon-assisted activation of defects as the origin of the enhanced LF noise.
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Submitted 29 October, 2014; v1 submitted 14 October, 2014;
originally announced October 2014.
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Thermal transport due to quantum interference in magnetic tunnel junctions
Authors:
J. F. Feng,
D. P. Liu,
Q. L. Ma,
H. X. Wei,
X. F. Han
Abstract:
We study the thermal transport in magnetic tunnel junctions. Thermal gradients across the tunneling barrier appear around the Fowler-Nordheim tunneling regime, due to the current-induced heat caused by quantum interference. Both thermovoltage and thermal temperature follow a linear response with the applied current, which is an evidence for a thermoelectric effect. By increasing the barrier transp…
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We study the thermal transport in magnetic tunnel junctions. Thermal gradients across the tunneling barrier appear around the Fowler-Nordheim tunneling regime, due to the current-induced heat caused by quantum interference. Both thermovoltage and thermal temperature follow a linear response with the applied current, which is an evidence for a thermoelectric effect. By increasing the barrier transparency, the dynamics of thermoelectric properties is observed with the current. Accordingly, a large range of the Seebeck coefficient, 10 - 1000 μV/K, has been obtained in magnetic tunnel junctions.
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Submitted 21 August, 2013;
originally announced August 2013.
