-
Dielectric properties and plasmon modes of gapped momentum systems of different dimensionality
Authors:
Yuriy Yerin,
A. A. Varlamov,
Roberto Felici,
Aldo Di Carlo
Abstract:
The concept of the energy gap is a fundamental characteristic of the band structure of a material and it determines its physical properties. Formally the energy gap appears in the dispersion relation $E_k$, where the vector $k$ is determined on the whole momentum space. However, today the {\it gapped momentum materials} are in the focus of research in which the so-called {\it momentum or $k$-gap}…
▽ More
The concept of the energy gap is a fundamental characteristic of the band structure of a material and it determines its physical properties. Formally the energy gap appears in the dispersion relation $E_k$, where the vector $k$ is determined on the whole momentum space. However, today the {\it gapped momentum materials} are in the focus of research in which the so-called {\it momentum or $k$-gap} can emerge, i.e. some lacunae of momentum space are excluded from the domain of the function $E_k$. One of such examples present the non-Hermitian systems. Within the random phase approximation we study the dielectric properties of the momentum gapped materials in one, two and three dimensions for both cases of zero and finite temperatures. We find the corresponding plasmon modes and determine the unusual behavior of the appropriate dispersion relations for each dimensionality. Based on these findings we evaluate the absorption coefficient of gapped momentum media and provide some numerical estimations of its value for the practical applications.
△ Less
Submitted 15 August, 2023;
originally announced August 2023.
-
Fermi surface chirality induced in a TaSe$_{2}$ monosheet formed by a Ta/ Bi$_{2}$Se$_{3}$ interface reaction
Authors:
Andrey Polyakov,
Katayoon Mohseni,
Roberto Felici,
Christian Tusche,
Ying-Jiun Chen,
Vitaliy Feyer,
Jochen Geck,
Tobias Ritschel,
Juan Rubio-Zuazo,
German R. Castro,
Holger L. Meyerheim,
Stuart S. P. Parkin
Abstract:
Spin-momentum locking in topological insulators and materials with Rashba-type interactions is an extremely attractive feature for novel spintronic devices and is therefore under intense investigation. Significant efforts are underway to identify new material systems with spin-momentum locking, but also to create heterostructures with new spintronic functionalities. In the present study we address…
▽ More
Spin-momentum locking in topological insulators and materials with Rashba-type interactions is an extremely attractive feature for novel spintronic devices and is therefore under intense investigation. Significant efforts are underway to identify new material systems with spin-momentum locking, but also to create heterostructures with new spintronic functionalities. In the present study we address both subjects and investigate a van der Waals-type heterostructure consisting of the topological insulator Bi$_{2}$Se$_{3}$ and a single Se-Ta-Se triple-layer (TL) of H-type TaSe$_{2}$ grown by a novel method which exploits an interface reaction between the adsorbed metal and selenium. We then show, using surface x-ray diffraction, that the symmetry of the TaSe2-like TL is reduced from D$_{3h}$ to C$_{3v}$ resulting from a vertical atomic shift of the tantalum atom. Spin- and angle-resolved photoemission indicates that, owing to the symmetry lowering, the states at the Fermi surface acquire an in-plane spin component forming a surface contour with a helical Rashba-like spin texture, which is coupled to the Dirac cone of the substrate. Our approach provides a new route to realize novel chiral two-dimensional electron systems via interface engineering that do not exist in the corresponding bulk materials.
△ Less
Submitted 14 December, 2020;
originally announced December 2020.
-
Perovskite Substrates Boost the Thermopower of Cobaltate Thin Films at High Temperatures
Authors:
P. Yordanov,
P. Wochner,
S. Ibrahimkutty,
C. Dietl,
F. Wrobel,
R. Felici,
G. Gregori,
J. Maier,
B. Keimer,
H. -U. Habermeier
Abstract:
Transition metal oxides are promising candidates for thermoelectric applications, because they are stable at high temperature and because strong electronic correlations can generate large Seebeck coefficients, but their thermoelectric power factors are limited by the low electrical conductivity. We report transport measurements on Ca3Co4O9 films on various perovskite substrates and show that rever…
▽ More
Transition metal oxides are promising candidates for thermoelectric applications, because they are stable at high temperature and because strong electronic correlations can generate large Seebeck coefficients, but their thermoelectric power factors are limited by the low electrical conductivity. We report transport measurements on Ca3Co4O9 films on various perovskite substrates and show that reversible incorporation of oxygen into SrTiO3 and LaAlO3 substrates activates a parallel conduction channel for p-type carriers, greatly enhancing the thermoelectric performance of the film-substrate system at temperatures above 450 °C. Thin-film structures that take advantage of both electronic correlations and the high oxygen mobility of transition metal oxides thus open up new perspectives for thermopower generation at high temperature.
△ Less
Submitted 25 April, 2017;
originally announced April 2017.
-
Topography of the graphene/Ir(111) moir{é} studied by surface x-ray diffraction
Authors:
Fabien Jean,
Tao Zhou,
Nils Blanc,
Roberto Felici,
Johann Coraux,
Gilles Renaud
Abstract:
The structure of a graphene monolayer on Ir(111) has been investigated {\it in situ} in the growth chamber by surface x-ray diffraction including the specular rod, which allows disentangling the effect of the sample roughness from that of the nanorippling of graphene and iridium along the moir{é}-like pattern between graphene and Ir(111). Accordingly we are able to provide precise estimates of the…
▽ More
The structure of a graphene monolayer on Ir(111) has been investigated {\it in situ} in the growth chamber by surface x-ray diffraction including the specular rod, which allows disentangling the effect of the sample roughness from that of the nanorippling of graphene and iridium along the moir{é}-like pattern between graphene and Ir(111). Accordingly we are able to provide precise estimates of the undulation associated with this nanorippling, which is small in this weakly interacting graphene/metal system and thus proved difficult to assess in the past. The nanoripplings of graphene and iridium are found in phase, i.e. the in-plane position of their height maxima coincide, but the amplitude of the height modulation is much larger for graphene (\(0.379 \pm 0.044\) Å) than, {\it e.g.}, for the topmost Ir layer (\(0.017 \pm 0.002\) Å). The average graphene-Ir distance is found to be \(3.38 \pm 0.04\) Å.
△ Less
Submitted 24 June, 2015;
originally announced June 2015.
-
Local detection of X-ray spectroscopies with an in-situ AFM
Authors:
Mario Rodrigues,
Olivier Dhez,
Simon Le Denmat,
Joel Chevrier,
Roberto Felici,
Fabio Comin
Abstract:
The in situ combination of Scanning Probe Microscopies (SPM) with X-ray microbeams adds a variety of new possibilities to the panoply of synchrotron radiation techniques. In this paper we describe an optics-free AFM/STM that can be directly installed on synchrotron radiation end stations for such combined experiments. The instrument can be used just for AFM imaging of the investigated sample or…
▽ More
The in situ combination of Scanning Probe Microscopies (SPM) with X-ray microbeams adds a variety of new possibilities to the panoply of synchrotron radiation techniques. In this paper we describe an optics-free AFM/STM that can be directly installed on synchrotron radiation end stations for such combined experiments. The instrument can be used just for AFM imaging of the investigated sample or can be used for detection of photoemitted electrons with a sharp STM-like tip, thus leading to the local measure of the X-ray absorption signal. Alternatively one can can measure the flux of photon impinging on the sharpest part of the tip to locally map the pattern of beams diffracted from the sample. In this paper we eventually provide some examples of local detection of XAS and diffraction.
△ Less
Submitted 26 August, 2008; v1 submitted 3 June, 2008;
originally announced June 2008.
-
A Nexafs Study of Nitric Oxide Layers Adsorbed from a nitrite Solution onto a Pt(111) Surface
Authors:
M. Pedio,
E. Casero,
S. Nannarone,
A. Giglia,
N. Mahne,
K. Hayakawa,
M. Benfatto,
K. Hatada,
R. Felici,
J. I. Cerda',
C. Alonso,
J. A. Martin-Gago
Abstract:
NO molecules adsorbed on a Pt(111) surface from dipping in an acidic nitrite solution are studied by near edge X-ray absorption fine structure spectroscopy (NEXAFS), X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) techniques. LEED patterns and STM images show that no long range ordered structures are formed after NO adsorpti…
▽ More
NO molecules adsorbed on a Pt(111) surface from dipping in an acidic nitrite solution are studied by near edge X-ray absorption fine structure spectroscopy (NEXAFS), X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) techniques. LEED patterns and STM images show that no long range ordered structures are formed after NO adsorption on a Pt(111) surface. Although the total NO coverage is very low, spectroscopic features in N K-edge and O K-edge absorption spectra have been singled out and related to the different species induced by this preparation method. From these measurements it is concluded that the NO molecule is adsorbed trough the N atom in an upright conformation. The maximum saturation coverage is about 0.3 monolayers, and although nitric oxide is the major component, nitrite and nitrogen species are slightly co-adsorbed on the surface. The results obtained from this study are compared with those previously reported in the literature for NO adsorbed on Pt(111) under UHV conditions.
△ Less
Submitted 12 March, 2008;
originally announced March 2008.
-
Upper Critical Fields up to 60T in Dirty Magnesium Diboride Thin Films
Authors:
C. Ferdeghini,
V. Ferrando,
C. Tarantini,
E. Bellingeri,
G. Grasso,
A. Malagoli,
D. Marre',
M. Putti,
P. Manfrinetti,
A. Pogrebnyakov,
J. M. Redwing,
X. X. Xi,
R. Felici,
E. Haanappel
Abstract:
Upper critical fields of several magnesium diboride thin films were measured up to 28 T at the Grenoble High Magnetic Field Laboratory (GHMFL) in Grenoble and up to 60 T at the Laboratoire National des Champs Magnetiques Pulses (LNCMP) in Toulouse. The samples were prepared both by pulsed laser deposition (PLD) and hybrid physical chemical vapour deposition (HPCVD) technique; they have critical…
▽ More
Upper critical fields of several magnesium diboride thin films were measured up to 28 T at the Grenoble High Magnetic Field Laboratory (GHMFL) in Grenoble and up to 60 T at the Laboratoire National des Champs Magnetiques Pulses (LNCMP) in Toulouse. The samples were prepared both by pulsed laser deposition (PLD) and hybrid physical chemical vapour deposition (HPCVD) technique; they have critical temperatures between 29 and 39 K and normal state resistivities between 5 and 250 μohmcm; one of them has been intentionally doped with carbon. The measured critical fields were exceptionally high; we obtained the record value of 52 T at 4.2 K in the parallel orientation. In contrast with the BCS predictions, no saturation in Hc2 at low temperature was observed. Furthermore, films with a wide range of resistivity values showed similar critical fields, suggesting that in a two band system resistivity and Hc2 are not trivially linked. The high Hc2 values seem to be related with the expanded c-axis. The structure of one of the samples was carefully investigated with X-ray diffraction at European Synchrotron Radiation Facility (ESRF) in Grenoble.
△ Less
Submitted 16 November, 2004;
originally announced November 2004.
-
Epitaxial MgB2 thin films on ZrB2 buffer layers: structural characterization by synchrotron radiation
Authors:
V. Ferrando,
C. Tarantini,
E. Bellingeri,
P. Manfrinetti,
I. Pallecchi,
D. Marre,
O. Plantevin,
M. Putti,
R. Felici,
C. Ferdeghini
Abstract:
Structural and superconducting properties of magnesium diboride thin films grown by pulsed laser deposition on zirconium diboride buffer layers were studied. We demonstrate that the ZrB2 layer is compatible with the MgB2 two step deposition process. Synchrotron radiation measurements, in particular anomalous diffraction measurements, allowed to separate MgB2 peaks from ZrB2 ones and revealed tha…
▽ More
Structural and superconducting properties of magnesium diboride thin films grown by pulsed laser deposition on zirconium diboride buffer layers were studied. We demonstrate that the ZrB2 layer is compatible with the MgB2 two step deposition process. Synchrotron radiation measurements, in particular anomalous diffraction measurements, allowed to separate MgB2 peaks from ZrB2 ones and revealed that both layers have a single in plane orientation with a sharp interface between them. Moreover, the buffer layer avoids oxygen contamination from the sapphire substrate. The critical temperature of this film is near 37.6 K and the upper critical field measured at Grenoble High Magnetic Field Laboratory up to 20.3 T is comparable with the highest ones reported in literature.
△ Less
Submitted 22 June, 2004;
originally announced June 2004.
-
Anisotropy in c-oriented MgB2 thin films grown by Pulsed Laser Deposition
Authors:
C. Ferdeghini,
V. Ferrando,
G. Grassano,
W. Ramadan,
E. Bellingeri,
V. Braccini,
D. Marre,
M. Putti,
P. Manfrinetti,
A. Palenzona,
F. Borgatti,
R. Felici,
C. Aruta
Abstract:
The electronic anisotropy in MgB2, is still a not completely clear topic; high quality c-oriented films are suitable systems to investigate this property. In this work we present our results on MgB2 superconducting thin films grown on MgO and sapphire substrates. The films are deposited in high vacuum, at room temperature, by Laser Ablation, starting from two different targets: pure Boron and st…
▽ More
The electronic anisotropy in MgB2, is still a not completely clear topic; high quality c-oriented films are suitable systems to investigate this property. In this work we present our results on MgB2 superconducting thin films grown on MgO and sapphire substrates. The films are deposited in high vacuum, at room temperature, by Laser Ablation, starting from two different targets: pure Boron and stoichiometric MgB2. In both cases, to obtain and crystallize the superconducting phase, an ex-situ annealing in magnesium vapor is needed. The films were characterized by Synchrotron radiation diffraction measurements; the films turned out to be strongly c-oriented, with the c-axis perpendicular to the film surface and an influence of the substrate on crystallographic parameters is observed. Resisivity measurements with the magnetic field perpendicular and parallel directions to the film surface evidenced an anisotropic upper critical field behavior. The Hc2 ratios (h) resulted in the range 1.2-1.8; this difference will be discussed also in comparison with the literature data.
△ Less
Submitted 28 September, 2001;
originally announced September 2001.
-
Growth of c-oriented MgB2 thin films by Pulsed Laser Deposition: structural characterization and electronic anisotropy
Authors:
C. Ferdeghini,
V. Ferrando,
G. Grassano,
W. Ramadan,
E. Bellingeri,
V. Braccini,
D. Marre',
P. Manfrinetti,
A. Palenzona,
F. Borgatti,
R. Felici,
T. -L. Lee
Abstract:
MgB2 thin films were deposited using Pulsed Laser Deposition (PLD) and ex-situ annealing in Mg atmosphere. The films presented critical temperatures up to 36K and turned out to be preferentially c-oriented both on Al2O3 (r-cut) and MgO(100) substrates. Synchrotron analyses gave also some indications of in plane texturing. The films exhibit very fine grain size (1200angstromin the basal plane and…
▽ More
MgB2 thin films were deposited using Pulsed Laser Deposition (PLD) and ex-situ annealing in Mg atmosphere. The films presented critical temperatures up to 36K and turned out to be preferentially c-oriented both on Al2O3 (r-cut) and MgO(100) substrates. Synchrotron analyses gave also some indications of in plane texturing. The films exhibit very fine grain size (1200angstromin the basal plane and 100angstrom along c-axis) but the general resistivity behavior and the remarkable extension of the irreversible region confirm that the grains boundaries are not barriers for supercurrents. Upper critical field measurements with the magnetic field perpendicular and parallel with respect to the film surface evidenced a field anisotropy ratio of 1.8. The Hc2 values are considerably higher with respect to the bulk ones, namely when the field lies in the basal plane, and the field-temperature phase diagram for the two magnetic field orientations suggest the possibility of strongly enhancing the pinning region by means of texturing.
△ Less
Submitted 2 July, 2001;
originally announced July 2001.
