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Periodic Boundary Conditions for Bosonic Path Integral Molecular Dynamics
Authors:
Jacob Higer,
Yotam M. Y. Feldman,
Barak Hirshberg
Abstract:
We develop an algorithm for bosonic path integral molecular dynamics (PIMD) simulations with periodic boundary conditions (PBC) that scales quadratically with the number of particles. Path integral methods are a powerful tool to simulate bosonic condensed phases, which exhibit fundamental physical phenomena such as Bose--Einstein condensation and superfluidity. Recently, we developed a quadratic s…
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We develop an algorithm for bosonic path integral molecular dynamics (PIMD) simulations with periodic boundary conditions (PBC) that scales quadratically with the number of particles. Path integral methods are a powerful tool to simulate bosonic condensed phases, which exhibit fundamental physical phenomena such as Bose--Einstein condensation and superfluidity. Recently, we developed a quadratic scaling algorithm for bosonic PIMD, but employed an ad hoc treatment of PBC. Here we rigorously enforce PBC in bosonic PIMD. It requires summing over the spring energies of all periodic images in the partition function, and a naive implementation scales exponentially with the system size. We present an algorithm for bosonic PIMD simulations of periodic systems that scales only quadratically. We benchmark our implementation on the free Bose gas and a model system of cold atoms in optical lattices. We also study an approximate treatment of PBC based on the minimum-image convention, and derive a numerical criterion to determine when it is valid.
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Submitted 16 February, 2025; v1 submitted 29 January, 2025;
originally announced January 2025.
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Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors
Authors:
Mayer M. Feldman,
Gordian Fuchs,
Tiffany Liu,
Luke A. D'Imperio,
M. David Henry,
Eric A. Shaner,
Stephen A. Lyon
Abstract:
We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs High-Electron-Mobility Transistors (HEMTs). We integrate this circuit with a Charge-Coupled Device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a Signal-to-Noise ratio (…
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We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs High-Electron-Mobility Transistors (HEMTs). We integrate this circuit with a Charge-Coupled Device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a Signal-to-Noise ratio (SNR) of $\thicksim$ 2$\frac{e}{\sqrt{Hz}}$ at 102 kHz, an order of magnitude improvement from previous implementations and provides a compelling alternative to few electron sensing with high frequency resonators.
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Submitted 2 December, 2024;
originally announced December 2024.
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Defect Positioning in Combinatorial Metamaterials
Authors:
Chaviva Sirote-Katz,
Yotam M. Y. Feldman,
Guy Cohen,
Tamás Kálmán,
Yair Shokef
Abstract:
Combinatorial mechanical metamaterials are made of anisotropic, flexible blocks, such that multiple metamaterials may be constructed using a single block type, and the system's response depends on the frustration (or its absence) due to the mutual orientations of the blocks within the lattice. Specifically, any minimal loop of blocks that may not simultaneously deform in their softest mode defines…
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Combinatorial mechanical metamaterials are made of anisotropic, flexible blocks, such that multiple metamaterials may be constructed using a single block type, and the system's response depends on the frustration (or its absence) due to the mutual orientations of the blocks within the lattice. Specifically, any minimal loop of blocks that may not simultaneously deform in their softest mode defines a mechanical defect at the vertex (in two dimensions) or edge (in three dimensions) that the loop encircles. Defects stiffen the metamaterial, and allow to design the spatial patterns of stress and deformation as the system is externally loaded. We study the ability to place defects at arbitrary positions in metamaterials made of a family of block types that we recently introduced for the square, honeycomb, and cubic lattices. Alongside blocks for which we show that any defect configuration is possible, we identify situations in which not all sets are realizable as defects. One of the restrictions is that in three dimensions, defected edges form closed curves. Even in cases when not all geometries of defect lines are possible, we show how to produce defect lines of arbitrary knottedness.
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Submitted 2 December, 2024;
originally announced December 2024.
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Anisotropic Thermal Transport in Tunable Self-Assembled Nanocrystal Supercrystals
Authors:
Matias Feldman,
Charles Vernier,
Rahul Nag,
Juan J. Barrios-Capuchino,
Sébastien Royer,
Hervé Cruguel,
Emmanuelle Lacaze,
Emmanuel Lhuillier,
Danièle Fournier,
Florian Schulz,
Cyrille Hamon,
Hervé Portalès,
James K. Utterback
Abstract:
Realizing tunable functional materials with built-in nanoscale heat flow directionality represents a significant challenge that could advance thermal management strategies. Here we use spatiotemporally-resolved thermoreflectance to visualize lateral thermal transport anisotropy in self-assembled supercrystals of anisotropic Au nanocrystals. Correlative electron and thermoreflectance microscopy rev…
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Realizing tunable functional materials with built-in nanoscale heat flow directionality represents a significant challenge that could advance thermal management strategies. Here we use spatiotemporally-resolved thermoreflectance to visualize lateral thermal transport anisotropy in self-assembled supercrystals of anisotropic Au nanocrystals. Correlative electron and thermoreflectance microscopy reveal that nano- to meso-scale heat predominantly flows along the long-axis of the anisotropic nanocrystals, and does so across grain boundaries and curved assemblies while voids disrupt heat flow. We finely control the anisotropy via the aspect ratio of constituent nanorods, and it exceeds the aspect ratio for nano-bipyramid supercrystals and certain nanorod arrangements. Finite element simulations and effective medium modeling rationalize the emergent anisotropic behavior in terms of a simple series resistance model, further providing a framework for estimating thermal anisotropy as a function of material and structural parameters. Self-assembly of colloidal nanocrystals promises an interesting route to direct heat flow in a wide range of applications that utilize this important class of materials.
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Submitted 10 December, 2024; v1 submitted 11 July, 2024;
originally announced July 2024.
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i-PI 3.0: a flexible and efficient framework for advanced atomistic simulations
Authors:
Yair Litman,
Venkat Kapil,
Yotam M. Y. Feldman,
Davide Tisi,
Tomislav Begušić,
Karen Fidanyan,
Guillaume Fraux,
Jacob Higer,
Matthias Kellner,
Tao E. Li,
Eszter S. Pós,
Elia Stocco,
George Trenins,
Barak Hirshberg,
Mariana Rossi,
Michele Ceriotti
Abstract:
Atomic-scale simulations have progressed tremendously over the past decade, largely due to the availability of machine-learning interatomic potentials. These potentials combine the accuracy of electronic structure calculations with the ability to reach extensive length and time scales. The i-PI package facilitates integrating the latest developments in this field with advanced modeling techniques,…
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Atomic-scale simulations have progressed tremendously over the past decade, largely due to the availability of machine-learning interatomic potentials. These potentials combine the accuracy of electronic structure calculations with the ability to reach extensive length and time scales. The i-PI package facilitates integrating the latest developments in this field with advanced modeling techniques, thanks to a modular software architecture based on inter-process communication through a socket interface. The choice of Python for implementation facilitates rapid prototyping but can add computational overhead. In this new release, we carefully benchmarked and optimized i-PI for several common simulation scenarios, making such overhead negligible when i-PI is used to model systems up to tens of thousands of atoms using widely adopted machine learning interatomic potentials, such as Behler-Parinello, DeePMD and MACE neural networks. We also present the implementation of several new features, including an efficient algorithm to model bosonic and fermionic exchange, a framework for uncertainty quantification to be used in conjunction with machine-learning potentials, a communication infrastructure that allows deeper integration with electronic-driven simulations, and an approach to simulate coupled photon-nuclear dynamics in optical or plasmonic cavities.
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Submitted 10 July, 2024; v1 submitted 24 May, 2024;
originally announced May 2024.
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Quadratic Scaling Bosonic Path Integral Molecular Dynamics
Authors:
Yotam M. Y. Feldman,
Barak Hirshberg
Abstract:
Bosonic exchange symmetry leads to fascinating quantum phenomena, from exciton condensation in quantum materials to the superfluidity of liquid Helium-4. Unfortunately, path integral molecular dynamics (PIMD) simulations of bosons are computationally prohibitive beyond $\mathord{\sim} 100$ particles, due to a cubic scaling with the system size. We present an algorithm that reduces the complexity f…
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Bosonic exchange symmetry leads to fascinating quantum phenomena, from exciton condensation in quantum materials to the superfluidity of liquid Helium-4. Unfortunately, path integral molecular dynamics (PIMD) simulations of bosons are computationally prohibitive beyond $\mathord{\sim} 100$ particles, due to a cubic scaling with the system size. We present an algorithm that reduces the complexity from cubic to quadratic, allowing the first simulations of thousands of bosons using PIMD. Our method is orders of magnitude faster, with a speedup that scales linearly with the number of particles and the number of imaginary time slices (beads). Simulations that would have otherwise taken decades can now be done in days. In practice, the new algorithm eliminates most of the added computational cost of including bosonic exchange effects, making them almost as accessible as PIMD simulations of distinguishable particles.
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Submitted 16 February, 2025; v1 submitted 29 May, 2023;
originally announced May 2023.
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Quantum Enhanced Probes of Magnetic Circular Dichroism
Authors:
Chengyun Hua,
Claire E. Marvinney,
Seongjin Hong,
Matthew Feldman,
Yun-Yi Pai,
Michael Chilcote,
Joshua Rabinowitz,
Raphael C. Pooser,
Alberto Marino,
Benjamin J. Lawrie
Abstract:
Magneto-optical microscopies, including optical measurements of magnetic circular dichroism, are increasingly ubiquitous tools for probing spin-orbit coupling, charge-carrier g-factors, and chiral excitations in matter, but the minimum detectable signal in classical magnetic circular dichroism measurements is fundamentally limited by the shot-noise limit of the optical readout field. Here, we use…
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Magneto-optical microscopies, including optical measurements of magnetic circular dichroism, are increasingly ubiquitous tools for probing spin-orbit coupling, charge-carrier g-factors, and chiral excitations in matter, but the minimum detectable signal in classical magnetic circular dichroism measurements is fundamentally limited by the shot-noise limit of the optical readout field. Here, we use a two-mode squeezed light source to improve the minimum detectable signal in magnetic circular dichroism measurements by 3 dB compared with state-of-the-art classical measurements, even with relatively lossy samples like terbium gallium garnet. We also identify additional opportunities for improvement in quantum-enhanced magneto-optical microscopies, and we demonstrate the importance of these approaches for environmentally sensitive materials and for low temperature measurements where increased optical power can introduce unacceptable thermal perturbations.
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Submitted 4 May, 2023;
originally announced May 2023.
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Disentangling Losses in Tantalum Superconducting Circuits
Authors:
Kevin D. Crowley,
Russell A. McLellan,
Aveek Dutta,
Nana Shumiya,
Alexander P. M. Place,
Xuan Hoang Le,
Youqi Gang,
Trisha Madhavan,
Nishaad Khedkar,
Yiming Cady Feng,
Esha A. Umbarkar,
Xin Gui,
Lila V. H. Rodgers,
Yichen Jia,
Mayer M. Feldman,
Stephen A. Lyon,
Mingzhao Liu,
Robert J. Cava,
Andrew A. Houck,
Nathalie P. de Leon
Abstract:
Superconducting qubits are a leading system for realizing large scale quantum processors, but overall gate fidelities suffer from coherence times limited by microwave dielectric loss. Recently discovered tantalum-based qubits exhibit record lifetimes exceeding 0.3 ms. Here we perform systematic, detailed measurements of superconducting tantalum resonators in order to disentangle sources of loss th…
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Superconducting qubits are a leading system for realizing large scale quantum processors, but overall gate fidelities suffer from coherence times limited by microwave dielectric loss. Recently discovered tantalum-based qubits exhibit record lifetimes exceeding 0.3 ms. Here we perform systematic, detailed measurements of superconducting tantalum resonators in order to disentangle sources of loss that limit state-of-the-art tantalum devices. By studying the dependence of loss on temperature, microwave photon number, and device geometry, we quantify materials-related losses and observe that the losses are dominated by several types of saturable two level systems (TLSs), with evidence that both surface and bulk related TLSs contribute to loss. Moreover, we show that surface TLSs can be altered with chemical processing. With four different surface conditions, we quantitatively extract the linear absorption associated with different surface TLS sources. Finally, we quantify the impact of the chemical processing at single photon powers, the relevant conditions for qubit device performance. In this regime we measure resonators with internal quality factors ranging from 5 to 15 x 10^6, comparable to the best qubits reported. In these devices the surface and bulk TLS contributions to loss are comparable, showing that systematic improvements in materials on both fronts will be necessary to improve qubit coherence further.
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Submitted 18 January, 2023;
originally announced January 2023.
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High fidelity state preparation, quantum control, and readout of an isotopically enriched silicon spin qubit
Authors:
A. R. Mills,
C. R. Guinn,
M. M. Feldman,
A. J. Sigillito,
M. J. Gullans,
M. Rakher,
J. Kerckhoff,
C. A. C. Jackson,
J. R. Petta
Abstract:
Quantum systems must be prepared, controlled, and measured with high fidelity in order to perform complex quantum algorithms. Control fidelities have greatly improved in silicon spin qubits, but state preparation and readout fidelities have generally been poor. By operating with low electron temperatures and employing high-bandwidth cryogenic amplifiers, we demonstrate single qubit readout visibil…
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Quantum systems must be prepared, controlled, and measured with high fidelity in order to perform complex quantum algorithms. Control fidelities have greatly improved in silicon spin qubits, but state preparation and readout fidelities have generally been poor. By operating with low electron temperatures and employing high-bandwidth cryogenic amplifiers, we demonstrate single qubit readout visibilities >99%, exceeding the threshold for quantum error correction. In the same device, we achieve average single qubit control fidelities >99.95%. Our results show that silicon spin qubits can be operated with high overall operation fidelity.
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Submitted 20 April, 2022;
originally announced April 2022.
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Two-qubit silicon quantum processor with operation fidelity exceeding 99%
Authors:
A. R. Mills,
C. R. Guinn,
M. J. Gullans,
A. J. Sigillito,
M. M. Feldman,
E. Nielsen,
J. R. Petta
Abstract:
Silicon spin qubits satisfy the necessary criteria for quantum information processing. However, a demonstration of high fidelity state preparation and readout combined with high fidelity single- and two-qubit gates, all of which must be present for quantum error correction, has been lacking. We use a two qubit Si/SiGe quantum processor to demonstrate state preparation and readout with fidelity ove…
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Silicon spin qubits satisfy the necessary criteria for quantum information processing. However, a demonstration of high fidelity state preparation and readout combined with high fidelity single- and two-qubit gates, all of which must be present for quantum error correction, has been lacking. We use a two qubit Si/SiGe quantum processor to demonstrate state preparation and readout with fidelity over 97%, combined with both single- and two-qubit control fidelities exceeding 99%. The operation of the quantum processor is quantitatively characterized using gate set tomography and randomized benchmarking. Our results highlight the potential of silicon spin qubits to become a dominant technology in the development of intermediate-scale quantum processors.
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Submitted 23 November, 2021;
originally announced November 2021.
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Magnetostriction of α-RuCl3 flakes in the zigzag phase
Authors:
Yun-Yi Pai,
Claire E. Marvinney,
Matthew A. Feldman,
Brian Lerner,
Yoong Sheng Phang,
Kai Xiao,
Jiaqiang Yan,
Liangbo Liang,
Matthew Brahlek,
Benjamin J. Lawrie
Abstract:
Motivated by the possibility of an intermediate U(1) quantum spin liquid phase in out-of-plane magnetic fields and enhanced magnetic fluctuations in exfoliated α-RuCl3 flakes, we study magneto-Raman spectra of exfoliated multilayer α-RuCl3 in out-of-plane magnetic fields of -6 T to 6 T at temperatures of 670 mK - 4 K. While the literature currently suggests that bulk α-RuCl3 is in an antiferromagn…
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Motivated by the possibility of an intermediate U(1) quantum spin liquid phase in out-of-plane magnetic fields and enhanced magnetic fluctuations in exfoliated α-RuCl3 flakes, we study magneto-Raman spectra of exfoliated multilayer α-RuCl3 in out-of-plane magnetic fields of -6 T to 6 T at temperatures of 670 mK - 4 K. While the literature currently suggests that bulk α-RuCl3 is in an antiferromagnetic zigzag phase with R3bar symmetry at low temperature, we do not observe R3bar symmetry in exfoliated α-RuCl3 at low temperatures. While we saw no magnetic field driven transitions, the Raman modes exhibit unexpected stochastic shifts in response to applied magnetic field that are above the uncertainties inferred from Bayesian analysis. These stochastic shifts are consistent with the emergence of magnetostrictive interactions in exfoliated α-RuCl3.
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Submitted 2 May, 2021;
originally announced May 2021.
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Photochromism in a Hexagonal Boron Nitride Single Photon Emitter
Authors:
Matthew A. Feldman,
Claire E. Marvinney,
Alexander A. Puretzky,
Benjamin J. Lawrie
Abstract:
Solid-state single-photon emitters (SPEs) such as the bright, stable, room-temperature defects within hexagonal boron nitride (hBN) are of increasing interest for quantum information science applications. To date, the atomic and electronic origins of SPEs within hBN are not well understood, and no studies have reported photochromism or explored cross-correlations between hBN SPEs. Here, we combine…
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Solid-state single-photon emitters (SPEs) such as the bright, stable, room-temperature defects within hexagonal boron nitride (hBN) are of increasing interest for quantum information science applications. To date, the atomic and electronic origins of SPEs within hBN are not well understood, and no studies have reported photochromism or explored cross-correlations between hBN SPEs. Here, we combine irradiation-time dependent measures of quantum efficiency and microphotoluminescence ($μ$PL) spectroscopy with two-color Hanbury Brown-Twiss interferometry to enable an investigation of the electronic structure of hBN defects. We identify photochromism in a hBN SPE that exhibits cross-correlations and correlated quantum efficiencies between the emission of its two zero-phonon lines.
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Submitted 15 September, 2020; v1 submitted 12 August, 2020;
originally announced August 2020.
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Computer-automated tuning procedures for semiconductor quantum dot arrays
Authors:
A. R. Mills,
M. M. Feldman,
C. Monical,
P. J. Lewis,
K. W. Larson,
A. M. Mounce,
J. R. Petta
Abstract:
As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software and image recognition techniques for rapidly evaluating charge stability diagrams. We use an image analysis toolbox developed in Python to automate the calibra…
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As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software and image recognition techniques for rapidly evaluating charge stability diagrams. We use an image analysis toolbox developed in Python to automate the calibration of virtual gates, a process that previously involved a large amount of user intervention. Moreover, we show that straightforward feedback protocols can be used to simultaneously tune multiple tunnel couplings in a triple quantum dot in a computer automated fashion. Finally, we adopt the use of a `tunnel coupling lever arm' to model the interdot barrier gate response and discuss how it can be used to more rapidly tune interdot tunnel couplings to the GHz values that are compatible with exchange gates.
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Submitted 24 July, 2019;
originally announced July 2019.
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Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001)
Authors:
Joon Sue Lee,
Borzoyeh Shojaei,
Mihir Pendharkar,
Mayer Feldman,
Kunal Mukherjee,
Chris J. Palmstrøm
Abstract:
Near-surface InAs two-dimensional electron gas (2DEG) systems have great potential for realizing networks of multiple Majorana zero modes towards a scalable topological quantum computer. Improving mobility in the near-surface 2DEGs is beneficial for stable topological superconducting states as well as for correlation of multiple Majorana zero modes in a complex network. Here, we investigate near-s…
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Near-surface InAs two-dimensional electron gas (2DEG) systems have great potential for realizing networks of multiple Majorana zero modes towards a scalable topological quantum computer. Improving mobility in the near-surface 2DEGs is beneficial for stable topological superconducting states as well as for correlation of multiple Majorana zero modes in a complex network. Here, we investigate near-surface InAs 2DEGs (13 nm away from the surface) grown on GaSb(001) substrates, whose lattice constant is closely matched to InAs, by molecular beam epitaxy. The effect of 10-nm-thick top barrier to the mobility is studied by comparing Al$_{0.9}$Ga$_{0.1}$Sb and In$_{0.75}$Ga$_{0.25}$As as a top barrier on otherwise identical InAs quantum wells grown with identical bottom barrier and buffer layers. A 3-nm-thick capping layer on Al$_{0.9}$Ga$_{0.1}$Sb top barrier also affects the 2DEG electronic transport properties by modifying scattering from 2D remote ionized impurities at the surface. The highest transport mobility of 650,000 cm$^2$/Vs with an electron density of 3.81 $\times$ 10$^{11}$ cm$^{-2}$ was observed in an InAs 2DEG with an Al$_{0.9}$Ga$_{0.1}$Sb top barrier and an In$_{0.75}$Ga$_{0.25}$As capping layer. Analysis of Shubnikov-de Haas oscillations in the high mobility sample suggests that long-range scattering, such as remote ionized impurity scattering, is the dominant scattering mechanism in the InAs 2DEGs grown on GaSb(001) substrates. In comparison to InAs quantum wells grown on lattice-mismatched InP, the ones grown on GaSb show smoother surface morphology and higher quantum mobility. However, In$_{0.75}$Ga$_{0.25}$As top barrier in InAs quantum well grown on GaSb limits the transport mobility by charged dislocations formed in it, in addition to the major contribution to scattering from the alloy scattering.
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Submitted 18 September, 2018;
originally announced September 2018.
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Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb
Authors:
Sean D. Harrington,
Anthony D. Rice,
Tobias Brown-Heft,
Bastien Bonef,
Abhishek Sharan,
Anthony P. McFadden,
John A. Logan,
Mihir Pendharkar,
Mayer M. Feldman,
Ozge Mercan,
Andre G. Petukhov,
Anderson Janotti,
Leyla Çolakerol Arslan,
Chris J. Palmstrøm
Abstract:
Epitaxial thin films of the substitutionally alloyed half-Heusler series CoTi$_{1-x}$Fe$_x$Sb were grown by molecular beam epitaxy on InAlAs/InP(001) substrates for concentrations 0.0$\leq$x$\leq$1.0. The influence of Fe on the structural, electronic, and magnetic properties was studied and compared to that expected from density functional theory. The films are epitaxial and single crystalline, as…
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Epitaxial thin films of the substitutionally alloyed half-Heusler series CoTi$_{1-x}$Fe$_x$Sb were grown by molecular beam epitaxy on InAlAs/InP(001) substrates for concentrations 0.0$\leq$x$\leq$1.0. The influence of Fe on the structural, electronic, and magnetic properties was studied and compared to that expected from density functional theory. The films are epitaxial and single crystalline, as measured by reflection high-energy electron diffraction and X-ray diffraction. Using in-situ X-ray photoelectron spectroscopy, only small changes in the valence band are detected for x$\leq$0.5. For films with x$\geq$0.05, ferromagnetism is observed in SQUID magnetometry with a saturation magnetization that scales linearly with Fe content. A dramatic decrease in the magnetic moment per formula unit occurs when the Fe is substitutionally alloyed on the Co site indicating a strong dependence on the magnetic moment with site occupancy. A crossover from both in-plane and out-of-plane magnetic moments to only in-plane moment occurs for higher concentrations of Fe. Ferromagnetic resonance indicates a transition from weak to strong interaction with a reduction in inhomogeneous broadening as Fe content is increased. Temperature-dependent transport reveals a semiconductor to metal transition with thermally activated behavior for x$\leq$0.5. Anomalous Hall effect and large negative magnetoresistance (up to -18.5% at 100 kOe for x=0.3) are observed for higher Fe content films. Evidence of superparamagnetism for x=0.3 and x=0.2 suggests for moderate levels of Fe, demixing of the CoTi$_{1-x}$Fe$_x$Sb films into Fe rich and Fe deficient regions may be present. Atom probe tomography is used to examine the Fe distribution in a x=0.3 film. Statistical analysis reveals a nonhomogeneous distribution of Fe atoms throughout the film, which is used to explain the observed magnetic and electrical behavior.
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Submitted 14 November, 2017;
originally announced November 2017.
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Dispersive Manipulation of Paired Superconducting Qubits
Authors:
Xingxiang Zhou,
Michael Wulf,
Zhengwei Zhou,
Guangcan Guo,
Marc J. Feldman
Abstract:
We combine the ideas of qubit encoding and dispersive dynamics to enable robust and easy quantum information processing (QIP) on paired superconducting charge boxes sharing a common bias lead. We establish a decoherence free subspace on these and introduce universal gates by dispersive interaction with a LC resonator and inductive couplings between the encoded qubits. These gates preserve the co…
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We combine the ideas of qubit encoding and dispersive dynamics to enable robust and easy quantum information processing (QIP) on paired superconducting charge boxes sharing a common bias lead. We establish a decoherence free subspace on these and introduce universal gates by dispersive interaction with a LC resonator and inductive couplings between the encoded qubits. These gates preserve the code space and only require the established local symmetry and the control of the voltage bias.
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Submitted 16 July, 2003;
originally announced July 2003.