Showing 1–21 of 21 results for author: Fedchenko, O

Ge$_{1-x}$Si$_{x}$ single crystals for Ge hole spin qubit integration

Authors: Andreas Fuhrberg, Pia M. Düring, Olena Fedchenko, Olena Tkach, Yaryna Lytvynenko, Kevin Gradwohl, Sergii Chernov, Andrei Gloskovskii, Christoph Schlueter, Gerd Schönhense, Hans-Joachim Elmers, Martina Müller

Abstract: Spin qubits are fundamental building blocks of modern quantum computing devices. The path of Ge-based hole-spin qubits has several advantages over Si-based electron-spin systems, such as the absence of valley band degeneracy, the possibility of efficient field control due to large spin-orbit coupling, and smaller effective masses. Among the possible Ge qubit devices, Ge/GeSi planar heterostructure… ▽ More Spin qubits are fundamental building blocks of modern quantum computing devices. The path of Ge-based hole-spin qubits has several advantages over Si-based electron-spin systems, such as the absence of valley band degeneracy, the possibility of efficient field control due to large spin-orbit coupling, and smaller effective masses. Among the possible Ge qubit devices, Ge/GeSi planar heterostructures have proven to be favourable for upscaling and fabrication. The Si concentration of the straining GeSi buffer serves as an important tuning parameter for the electronic structure of Ge/GeSi qubits. A particularly low Si concentration of x = 0.15 of the Ge$_{0.85}$Si$_{0.15}$ crystal should enable minimal lattice strain for spin qubit heterostructures, which is difficult to stabilize as a random alloy. We present a synchrotron-based study to investigate the chemical composition, valence band electronic structure and local atomic structure of a Ge$_{0.85}$Si$_{0.15}$ single crystal using the advanced combination of hard X-ray photoelectron spectroscopy (HAXPES), hard X-ray momentum microscopy (HarMoMic) and X-ray photoelectron diffraction (XPD). We found that the Ge$_{0.85}$Si$_{0.15}$ crystal has an individual, uniform valence band structure, with no signs of phase separation. The shapes of the valence bands resemble those of pure Ge, as do the low effective masses. XPD experiments and Bloch wave calculations, show the Si atoms located at Ge lattice sites within the crystal, forming a random alloy. This high chemical, electronic and structural quality of Ge$_{0.85}$Si$_{0.15}$ single-crystal substrates is of crucial importance for their implementation to enable long spin lifetimes in Ge-based hole-spin qubits. The results emphasise the power of combined X-ray spectromicroscopy techniques, which provide key insights into the qubit building blocks that form the basis of quantum technologies. △ Less

Submitted 22 April, 2025; originally announced April 2025.

Unveiling Fine Structure and Energy-driven Transition of Photoelectron Kikuchi Diffraction

Authors: Trung-Phuc Vo, Olena Tkach, Aki Pulkkinen, Didier Sebilleau, Aimo Winkelmann, Olena Fedchenko, Yaryna Lytvynenko, Dmitry Vasilyev, Hans-Joachim Elmers, Gerd Schonhense, Jan Minar

Abstract: The intricate fine structure of Kikuchi diffraction plays a vital role in probing phase transformations and strain distributions in functional materials, particularly in electron microscopy. Beyond these applications, it also proves essential in photoemission spectroscopy (PES) at high photon energies, aiding in the disentanglement of complex angle-resolved PES data and enabling emitter-site-speci… ▽ More The intricate fine structure of Kikuchi diffraction plays a vital role in probing phase transformations and strain distributions in functional materials, particularly in electron microscopy. Beyond these applications, it also proves essential in photoemission spectroscopy (PES) at high photon energies, aiding in the disentanglement of complex angle-resolved PES data and enabling emitter-site-specific studies. However, the detection and analysis of these rich faint structures in photoelectron diffraction (PED), especially in the hard X-ray regime, remain highly challenging, with only a limited number of simulations successfully reproducing these patterns. The strong energy dependence of Kikuchi patterns further complicates their interpretation, necessitating advanced theoretical approaches. To enhance structural analysis, we present a comprehensive theoretical study of fine diffraction patterns and their evolution with energy by simulating core-level emissions from Ge(100) and Si(100). Using multiple-scattering theory and the fully relativistic one-step photoemission model, we simulate faint pattern networks for various core levels across different kinetic energies (106 eV - 4174 eV), avoiding cluster size convergence issues inherent in cluster-based methods. Broadening in patterns is discussed via the inelastic scattering treatment. For the first time, circular dichroism has been observed and successfully reproduced in the angular distribution of Si (100) 1s, revealing detailed features and asymmetries up to 31%. Notably, we successfully replicate experimental bulk and more "surface-sensitivity" diffraction features, further validating the robustness of our simulations. The results show remarkable agreement with the experimental data obtained using circularly polarized radiations, demonstrating the potential of this methodology for advancing high-energy PES investigations. △ Less

Submitted 2 May, 2025; v1 submitted 20 April, 2025; originally announced April 2025.

Layered Multiple Scattering Approach to Hard X-ray Photoelectron Diffraction: Theory and Application

Authors: Trung-Phuc Vo, Olena Tkach, Sylvain Tricot, Didier Sebilleau, Jurgen Braun, Aki Pulkkinen, Aimo Winkelmann, Olena Fedchenko, Yaryna Lytvynenko, Dmitry Vasilyev, Hans-Joachim Elmers, Gerd Schonhense, Jan Minar

Abstract: Photoelectron diffraction (PED) is a powerful and essential experimental technique for resolving the structure of surfaces with sub-angstrom resolution. In the high energy regime, researchers in angle-resolved photoemission spectroscopy (ARPES) observe modulating patterns attributed to X-ray-PED (XPD) effects. This is accompanied by other challenges such as low cross-sections, significant photon m… ▽ More Photoelectron diffraction (PED) is a powerful and essential experimental technique for resolving the structure of surfaces with sub-angstrom resolution. In the high energy regime, researchers in angle-resolved photoemission spectroscopy (ARPES) observe modulating patterns attributed to X-ray-PED (XPD) effects. This is accompanied by other challenges such as low cross-sections, significant photon momentum transfer, and non-negligible phonon scattering. Overall, XPD is not only an advantageous approach but also exhibits unexpected effects. To disentangle these diffraction influences, we present a PED implementation for the SPRKKR package that utilizes multiple scattering theory and a one-step model in the photoemission process. Unlike real-space implementations of the multiple scattering XPD formalism, we propose a k-space implementation based on the layer KKR method. The main advantage of this method is its ability to address a very broad kinetic energy range (20-8000 eV) without convergence problems related to angular momentum and cluster size. Furthermore, the so-called alloy analogy model can be used to simulate XPD at finite temperatures as well as XPD effects observed in soft and hard X-ray ARPES. For practical applications, we have calculated the circular dichroism in angular distributions (CDAD) associated with core-level photoemission of 2p from Si(100) and 3p from Ge(100). Photoelectrons are excited by hard X-rays (6000 eV) with right and left circularly polarized radiation (RCP and LCP, respectively). △ Less

Submitted 2 May, 2025; v1 submitted 14 November, 2024; originally announced November 2024.

Spin polarization of the two-dimensional electron gas at the EuO/SrTiO$_3$ interface

Authors: Paul Rosenberger, Andri Darmawan, Olena Fedchenko, Olena Tkach, Serhii V. Chernov, Dmytro Kutnyakhov, Moritz Hoesch, Markus Scholz, Kai Rossnagel, Rossitza Pentcheva, Gerd Schönhense, Hans-Joachim Elmers, Martina Müller

Abstract: Spin-polarized two-dimensional electron gases (2DEGs) are of particular interest for functional oxide electronics applications. The redox-created 2DEG residing on the strontium titanate, SrTiO$_3$ (STO), side of a europium monoxide (EuO)/SrTiO$_3$ (001) interface is expected to be significantly spin-polarized due to the proximity to the strong ($7\,μ_B/f.u.$) Heisenberg ferromagnet EuO. We apply m… ▽ More Spin-polarized two-dimensional electron gases (2DEGs) are of particular interest for functional oxide electronics applications. The redox-created 2DEG residing on the strontium titanate, SrTiO$_3$ (STO), side of a europium monoxide (EuO)/SrTiO$_3$ (001) interface is expected to be significantly spin-polarized due to the proximity to the strong ($7\,μ_B/f.u.$) Heisenberg ferromagnet EuO. We apply magnetic circular dichroism in the angular distribution (MCDAD) of photoemitted electrons to investigate whether and how the induced spin polarization of the 2DEG depends on the dimensionality of the overlaying EuO layer. The experimental data are complemented by density functional theory calculations with a Hubbard $U$ term (DFT+$U$). We show that the EuO/STO interfacial 2DEG is spin-polarized even for ultrathin EuO overlayers, starting at an EuO threshold thickness of only two monolayers. Additional EuO monolayers even increase the induced magnetic Ti moment and thus the spin polarization of the 2DEG. Our results and the potential to enhance the magnetic order of EuO by other proximity effects indicate that the EuO/STO (001) interface is an ideal template for creating (multi-)functional spin-polarized 2DEGs for application in oxide electronics. △ Less

Submitted 29 December, 2024; v1 submitted 31 October, 2024; originally announced October 2024.

Comments: 8 pages, 5 figures

The electronic structure of EuPd$_2$Si$_2$ in the vicinity of the critical endpoint

Authors: O. Fedchenko, Y. -J. Song, O. Tkach, Y. Lytvynenko, S. V. Chernov, A. Gloskovskii, C. Schlueter, M. Peters, K. Kliemt, C. Krellner, R. Valenti, G. Schoenhense, H. J. Elmers

Abstract: Hard X-ray angle-resolved photoemission spectroscopy reveals significant alterations in the valence band states of EuPd$_2$Si$_2$ at a temperature $T_V$, where the Eu ions undergo a temperature-induced valence crossover from a magnetic Eu$^{2+}$ state to a low-temperature valence-fluctuating state. The introduction of small amounts of Au on Pd lattice sites and Ge on Si sites, respectively, result… ▽ More Hard X-ray angle-resolved photoemission spectroscopy reveals significant alterations in the valence band states of EuPd$_2$Si$_2$ at a temperature $T_V$, where the Eu ions undergo a temperature-induced valence crossover from a magnetic Eu$^{2+}$ state to a low-temperature valence-fluctuating state. The introduction of small amounts of Au on Pd lattice sites and Ge on Si sites, respectively, results in a decrease in $T_V$ and the emergence of an antiferromagnetic state at low temperatures without valence fluctuations. It has been proposed that the boundary between AFM order and valence crossover represents a first-order phase transition associated with a specific type of second-order critical end point. In this scenario, strong coupling effects between fluctuating charge, spin, and lattice degrees of freedom are to be expected. In the case of EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$ with x=0.13, which is situated close to the critical end point, a splitting of conduction band states and the emergence of flat bands with one-dimensional character have been observed. A comparison with ab initio theory demonstrates a high degree of correlation with experimental findings, particularly in regard to the bands situated in proximity to the critical end point. △ Less

Submitted 24 October, 2024; originally announced October 2024.

Comments: 9 pages, 9 figures

Chirality in the Kagome Metal CsV$_3$Sb$_5$

Authors: H. J. Elmers, O. Tkach, Y. Lytvynenko, P. Yogi, M. Schmitt, D. Biswas, J. Liu, S. V. Chernov, M. Hoesch, D. Kutnyakhov, N. Wind, L. Wenthaus, M. Scholz, K. Rossnagel, A. Gloskovskii, C. Schlueter, A. Winkelmann, A. -A. Haghighirad, T. -L. Lee, M. Sing, R. Claessen, M. Le Tacon, J. Demsar, G. Schonhense, O. Fedchenko

Abstract: Using x-ray photoelectron diffraction (XPD) and angle-resolved photoemission spectroscopy, we study photoemission intensity changes related to changes in the geometric and electronic structure in the kagome metal CsV$_3$Sb$_5$ upon transition to an unconventional charge density wave (CDW) state. The XPD patterns reveal the presence of a chiral atomic structure in the CDW phase. Furthermore, using… ▽ More Using x-ray photoelectron diffraction (XPD) and angle-resolved photoemission spectroscopy, we study photoemission intensity changes related to changes in the geometric and electronic structure in the kagome metal CsV$_3$Sb$_5$ upon transition to an unconventional charge density wave (CDW) state. The XPD patterns reveal the presence of a chiral atomic structure in the CDW phase. Furthermore, using circularly polarized x-rays, we have found a pronounced non-trivial circular dichroism in the angular distribution of the valence band photoemission in the CDW phase, indicating a chirality of the electronic structure. This observation is consistent with the proposed orbital loop current order. In view of a negligible spontaneous Kerr signal in recent magneto-optical studies, the results suggest an antiferromagnetic coupling of the orbital magnetic moments along the $c$-axis. While the inherent structural chirality may also induce circular dichroism, the observed asymmetry values seem to be too large in the case of the weak structural distortions caused by the CDW. △ Less

Submitted 7 August, 2024; originally announced August 2024.

Hybrid Photoelectron Momentum Microscope at the Soft X-ray Beamline I09 of the Diamond Light Source

Authors: Matthias Schmitt, Deepnarayan Biswas, Olena Tkach, Olena Fedchenko, Jieyi Liu, Hans-Joachim Elmers, Michael Sing, Ralph Claessen, Tien-Lin Lee, Gerd Schönhense

Abstract: Soft X-ray momentum microscopy of crystalline solids is a highly efficient approach to map the photoelectron distribution in four-dimensional (E,k) parameter space over the entire Brillouin zone. The fixed sample geometry eliminates any modulation of the matrix element otherwise caused by changing the angle of incidence. We present a new endstation at the soft X-ray branch of beamline I09 at the D… ▽ More Soft X-ray momentum microscopy of crystalline solids is a highly efficient approach to map the photoelectron distribution in four-dimensional (E,k) parameter space over the entire Brillouin zone. The fixed sample geometry eliminates any modulation of the matrix element otherwise caused by changing the angle of incidence. We present a new endstation at the soft X-ray branch of beamline I09 at the Diamond Light Source, UK. The key component is a large single hemispherical spectrometer combined with a time-of-flight analyzer behind the exit slit. The photon energy ranges from hv = 105 eV to 2 keV, with circular polarization available for hv > 150 eV, allowing for circular dichroism measurements in angle-resolved photoemission (CD-ARPES). A focused and monochromatized He lamp is used for offline measurements. Under k-imaging conditions, energy and momentum resolution are 10.2 meV (FWHM) and 0.010 angstroms^-1 (base resolution 4.2 meV with smallest slits and a pass energy of 8 eV). The large angular filling of the entrance lens and hemisphere (225 mm path radius) allows k-field-of-view diameters > 6 angstroms^-1. Energy filtered X-PEEM mode using synchrotron radiation revealed a resolution of 300 nm. As examples we show 2D band mapping of bilayer graphene, 3D mapping of the Fermi surface of Cu, CD-ARPES for intercalated indenene layers and the sp valence bands of Cu and Au, and full-field photoelectron diffraction patterns of Ge. △ Less

Submitted 2 June, 2024; originally announced June 2024.

Comments: 20 pages, 9 figures

Multi-Mode Front Lens for Momentum Microscopy: Part II Experiments

Authors: O. Tkach, S. Fragkos, Q. Nguyen, S. Chernov, M. Scholz, N. Wind, S. Babenkov, O. Fedchenko, Y. Lytvynenko, D. Zimmer, A. Hloskovskii, D. Kutnyakhov, F. Pressacco, J. Dilling, L. Bruckmeier, M. Heber, F. Scholz, J. Sobota, J. Koralek, N. Sirica, M. Kallmayer, M. Hoesch, C. Schlueter, L. V. Odnodvorets, Y. Mairesse , et al. (4 additional authors not shown)

Abstract: We have experimentally demonstrated different operating modes for the front lenses of the momentum microscopes described in Part I. Measurements at energies from vacuum UV at a high-harmonic generation (HHG)-based source to the soft and hard X-ray range at a synchrotron facility validated the results of theoretical ray-tracing calculations. The key element is a ring electrode concentric with the e… ▽ More We have experimentally demonstrated different operating modes for the front lenses of the momentum microscopes described in Part I. Measurements at energies from vacuum UV at a high-harmonic generation (HHG)-based source to the soft and hard X-ray range at a synchrotron facility validated the results of theoretical ray-tracing calculations. The key element is a ring electrode concentric with the extractor electrode, which can tailor the field in the gap. First, the gap-lens-assisted extractor mode reduces the field strength at the sample while mitigating image aberrations. This mode gave good results in all spectral ranges. Secondly, by compensating the field at the sample surface with a negative voltage at the ring electrode we can operate in zero-field mode, which is beneficial for operando experiments. Finally, higher negative voltages establish the repeller mode, which removes all slow electrons below a certain kinetic energy to eliminate the primary contribution to the space-charge interaction in pump-probe experiments. The switch from extractor to repeller mode is associated with a reduction in the k-field-of-view (10-20 % at hard-X-ray energies, increasing to ~50% at low energies). Real-space imaging also benefits from the new lens modes as confirmed by ToF-XPEEM imaging with 650 nm resolution. △ Less

Submitted 19 January, 2024; v1 submitted 18 January, 2024; originally announced January 2024.

Comments: 22 pages, 9 figures, 56 references

Doping-Induced Electronic and Structural Phase Transition in the Bulk Weyl Semimetal Mo1-xWxTe2

Authors: O. Fedchenko, F. K. Diekmann, P. Russmann, M. Kallmayer, L. Odenbreit, S. M. Souliou, M. Frachet, A. Winkelmann, M. Merz, S. V. Chernov, D. Vasilyev, D. Kutnyakhov, O. Tkach, Y. Lytvynenko, K. Medjanik, C. Schlueter, A. Gloskovskii, T. R. F. Peixoto, M. Hoesch, M. Le Tacon, Y. Mokrousov, K. Rossnage, G. Schönhense, H. -J. Elmers

Abstract: A comprehensive study of the electronic and structural phase transition from 1T` to Td in the bulk Weyl semimetal Mo1-xWxTe2 at different doping concentrations has been carried out using time-of-flight momentum microscopy (including circular and linear dichroism), X-ray photoelectron spectroscopy (XPS), X-ray photoelectron diffraction (XPD), X-ray diffraction (XRD), angle-resolved Raman spectrosco… ▽ More A comprehensive study of the electronic and structural phase transition from 1T` to Td in the bulk Weyl semimetal Mo1-xWxTe2 at different doping concentrations has been carried out using time-of-flight momentum microscopy (including circular and linear dichroism), X-ray photoelectron spectroscopy (XPS), X-ray photoelectron diffraction (XPD), X-ray diffraction (XRD), angle-resolved Raman spectroscopy, transport measurements, density functional theory (DFT) and Kikuchi pattern calculations. High-resolution angle-resolved photoemission spectroscopy (ARPES) at 20 K reveals surface electronic states, which are indicative of topological Fermi arcs. Their dispersion agrees with the position of Weyl points predicted by DFT calculations based on the experimental crystal structure of our samples determined by XRD. Raman spectroscopy confirms the inversion symmetry breaking for the Td -phase, which is a necessary condition for the emergence of topological states. Transport measurements show that increasing the doping concentration from 2 to 9% leads to an increase in the temperature of the phase transition from 1T` to Td from 230 K to 270 K. Magnetoresistance and longitudinal elastoresistance show significantly increased values in the Td -phase due to stimulated inter-pocket electron backscattering. The results demonstrate the close relationship between electronic properties and elastic deformations in MoTe2. △ Less

Submitted 16 October, 2023; originally announced October 2023.

Comments: 22 pages, 10 figures

Valence-transition-induced changes of the electronic structure in EuPd$_2$Si$_2$

Authors: O. Fedchenko, Y. -J. Song, O. Tkach, Y. Lytvynenko, S. V. Chernov, A. Gloskovskii, C. Schlueter, M. Peters, K. Kliemt, C. Krellner, R. Valentí, G. Schönhense, H. J. Elmers

Abstract: We present results of hard X-ray angle-resolved photoemission spectroscopy and photoemission diffraction measurements performed on high-quality single crystals of the valence transition compound EuPd$_2$Si$_2$ for temperatures 25~K $\leq$ T $\leq$ 300~K. At low temperatures we observe a Eu $4f$ valence $v=2.5$, % occupation number $n=6.5$, which decreases to $v=2.1$ for temperatures above the vale… ▽ More We present results of hard X-ray angle-resolved photoemission spectroscopy and photoemission diffraction measurements performed on high-quality single crystals of the valence transition compound EuPd$_2$Si$_2$ for temperatures 25~K $\leq$ T $\leq$ 300~K. At low temperatures we observe a Eu $4f$ valence $v=2.5$, % occupation number $n=6.5$, which decreases to $v=2.1$ for temperatures above the valence transition around $T_V \approx 160$~K. The experimental valence numbers resulting from an evaluation of the Eu(III)/Eu(II) $3d$ core levels, are used for calculating band structures using density functional theory. The valence transition significantly changes the band structure as determined by angle-resolved photoemission spectroscopy. In particular, the Eu $5d$ valence bands are shifted to lower binding energies with increasing Eu $4f$ occupancy. To a lesser extent, bands derived from the Si $3p$ and Pd $4d$ orbitals are also affected. This observation suggests a partial charge transfer between Eu and Pd/Si sites. Comparison with {\it ab-initio} theory shows a good agreement with experiment, in particular concerning the unequal band shift with increasing Eu $4f$ occupancy. △ Less

Submitted 10 October, 2023; originally announced October 2023.

Control of the asymmetric band structure in Mn2Au by a ferromagnetic driver layer

Authors: Y. Lytvynenko, O. Fedchenko, S. V. Chernov, S. Babenkov, D. Vasilyev, O. Tkach, A. Gloskovskii, T. R. F. Peixoto, C. Schlueter, V. Grigorev, M. Filianina, S. Sobolev, A. Kleibert, M. Klaeui, J. Demsar, G. Schönhense, M. Jourdan, H. J. Elmers

Abstract: Hard X-ray angle-resolved photoemission spectroscopy reveals the momentum-resolved band structure in an epitaxial Mn2Au(001) film capped by a 2 nm thick ferromagnetic Permalloy layer. By magnetizing the Permalloy capping layer, the exceptionally strong exchange bias aligns the Neel vector in the Mn2Au(001) film accordingly. Uncompensated interface Mn magnetic moments in Mn2Au were identified as th… ▽ More Hard X-ray angle-resolved photoemission spectroscopy reveals the momentum-resolved band structure in an epitaxial Mn2Au(001) film capped by a 2 nm thick ferromagnetic Permalloy layer. By magnetizing the Permalloy capping layer, the exceptionally strong exchange bias aligns the Neel vector in the Mn2Au(001) film accordingly. Uncompensated interface Mn magnetic moments in Mn2Au were identified as the origin of the exchange bias using X-ray magnetic circular dichroism in combination with photoelectron emission microscopy. Using time-of-flight momentum microscopy, we measure the asymmetry of the band structure in Mn2Au resulting from the homogeneous orientation of the Neel vector. Comparison with theory shows that the Neel vector, determined by the magnetic moment of the top Mn layer, is antiparallel to the Permalloy magnetization. The experimental results demonstrate that hard X-ray photoemission spectroscopy can measure the band structure of epitaxial layers beneath a metallic capping layer and corroborate the asymmetric band structure in Mn2Au that was previously inferred only indirectly. △ Less

Submitted 26 June, 2023; originally announced June 2023.

Comments: 7 pages, 4 figures

Observation of time-reversal symmetry breaking in the band structure of altermagnetic RuO$_2$

Authors: O. Fedchenko, J. Minar, A. Akashdeep, S. W. D'Souza, D. Vasilyev, O. Tkach, L. Odenbreit, Q. L. Nguyen, D. Kutnyakhov, N. Wind, L. Wenthaus, M. Scholz, K. Rossnagel, M. Hoesch, M. Aeschlimann, B. Stadtmueller, M. Klaeui, G. Schoenhense, G. Jakob, T. Jungwirth, L. Smejkal, J. Sinova, H. J. Elmers

Abstract: Altermagnets are an emerging third elementary class of magnets. Unlike ferromagnets, their distinct crystal symmetries inhibit magnetization while, unlike antiferromagnets, they promote strong spin polarization in the band structure. The corresponding unconventional mechanism of timereversal symmetry breaking without magnetization in the electronic spectra has been regarded as a primary signature… ▽ More Altermagnets are an emerging third elementary class of magnets. Unlike ferromagnets, their distinct crystal symmetries inhibit magnetization while, unlike antiferromagnets, they promote strong spin polarization in the band structure. The corresponding unconventional mechanism of timereversal symmetry breaking without magnetization in the electronic spectra has been regarded as a primary signature of altermagnetism, but has not been experimentally visualized to date. We directly observe strong time-reversal symmetry breaking in the band structure of altermagnetic RuO$_2$ by detecting magnetic circular dichroism in angle-resolved photoemission spectra. Our experimental results, supported by ab initio calculations, establish the microscopic electronic-structure basis for a family of novel phenomena and functionalities in fields ranging from topological matter to spintronics, that are based on the unconventional time-reversal symmetry breaking in altermagnets. △ Less

Submitted 3 June, 2023; originally announced June 2023.

Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy

Authors: Moritz Hoesch, Olena Fedchenko, Mao Wang, Christoph Schlueter, Dmitrii Potorochin, Katerina Medjanik, Sergey Babenkov, Anca S. Ciobanu, Aimo Winkelmann, Hans-Joachim Elmers, Shengqiang Zhou, Manfred Helm, Gerd Schönhense

Abstract: Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distingui… ▽ More Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these configurations a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions this matches the expectations. For multi-Te configurations the results contribute to understanding the exceptional activation of free charge carriers in hyperdoping of chalcogens in silicon. △ Less

Submitted 23 June, 2023; v1 submitted 23 March, 2023; originally announced March 2023.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 122, 252108 (2023)

Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)

Authors: Sebastian Kölsch, Alfons Schuck, Olena Fedchenko, Dmitry Vasilyev, Sergeij Chernov, Lena Tkach, Christoph Schlüter, Thiago R. F. Peixoto, Andrii Gloskowski, Hans-Joachim Elmers, Gerd Schönhense, Cornelius Krellner, Michael Huth

Abstract: Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray… ▽ More Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationship of tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axis orientation for the thin film, whereby the a-axes of both lattices align. XRD at low temperatures reveals a strong coupling of the thin film lattice to the substrate, showing no abrupt compression over the temperature range from 300 to 10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals a temperature-independent valence of +2.0 for Eu. The evolving biaxial tensile strain upon cooling is suggested to suppress the valence transition. Instead low temperature transport measurements of the resistivity and the Hall effect in a magnetic field up to 5 T point to a film thickness independent phase transition at 16-20 K, indicating magnetic ordering. △ Less

Submitted 31 August, 2022; originally announced August 2022.

Structure Analysis using Time-of-Flight Momentum Microscopy with Hard X-rays: Status and Prospects

Authors: Olena Fedchenko, Aimo Winkelmann, Gerd Schönhense

Abstract: X-ray photoelectron diffraction (XPD) has developed into a powerful technique for the structural analysis of solids. Extension of the technique into the hard-X-ray range (hXPD) gives access to true bulk information. Here we give a status report on hXPD experiments using a novel full-field imaging technique: Time-of-flight momentum microscopy (ToF-MM). A special variant of ToF-MM is capable of reco… ▽ More X-ray photoelectron diffraction (XPD) has developed into a powerful technique for the structural analysis of solids. Extension of the technique into the hard-X-ray range (hXPD) gives access to true bulk information. Here we give a status report on hXPD experiments using a novel full-field imaging technique: Time-of-flight momentum microscopy (ToF-MM). A special variant of ToF-MM is capable of recording high kinetic energies (up to >7keV) and enlarged k-fields-of-view. We present applications that are specific for high kinetic energies. The strong site specificity of hXPD is exemplified for NbSe2, the cubic-to-tetragonal transition in SrTiO3 and the zinc-blende structure in epitaxial GaAs films. Bloch-wave calculations show a very good agreement with experiment and reveal fingerprint-like signatures of emitter sites in host lattices. We show a dopant-site analysis in two semiconductors (Mn in GaAs and Te in Si). Hard-X-ray ARPES plus core-level hXPD enable eliminating the strong diffraction signature imprinted in HARPES maps. △ Less

Submitted 24 February, 2022; originally announced February 2022.

Comments: 40 pages, 8 figures

Hard x-ray angle-resolved photoemission from a buried high-mobility electron system

Authors: Michael Zapf, Matthias Schmitt, Judith Gabel, Philipp Scheiderer, Martin Stübinger, Berengar Leikert, Giorgio Sangiovanni, Lenart Dudy, Sergii Chernov, Sergey Babenkov, Dmitry Vasilyev, Olena Fedchenko, Katerina Medjanik, Yury Matveyev, Andrei Gloskowski, Christoph Schlueter, Tien-Lin Lee, Hans-Joachim Elmers, Gerd Schönhense, Michael Sing, Ralph Claessen

Abstract: Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by… ▽ More Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by pulsed laser deposition of a disordered LaAlO$_3$ film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. From a comparison to calculations it is found that the band structure deviates from that of electron-doped bulk KTaO$_3$ due to the confinement to the interface. Nevertheless, the Fermi surface appears to be clearly three-dimensional. From the $k$ broadening of the Fermi surface and core-level depth profiling we estimate the extension of the electron system to be at least 1 nm but not much larger than 2 nm, respectively. △ Less

Submitted 20 September, 2022; v1 submitted 28 October, 2021; originally announced October 2021.

Comments: 13 pages, 7 figures

Direct Observation of Antiferromagnetic Parity Violation in the Electronic Structure of Mn$_2$Au

Authors: Olena Fedchenko, Libor Smejkal, Michael Kallmayer, Yarina Lytvynenko, Katerina Medjanik, Sergey Babenkov, Dmitry Vasilyev, Matthias Klaeui, Jure Demsar, Gerd Schoenhense, Martin Jourdan, Jairo Sinova, Hans-Joachim Elmers

Abstract: Parity symmetric photoemission spectra are ubiquitous in solid state research, being prevalent in many highly active areas, such as unconventional superconductors, nonmagnetic and antiferromagnetic topological insulators, and weakly relativistic collinear magnets, among others. The direct observation of parity-violating metallic Kramers degenerate bands has remained hitherto experimentally elusive… ▽ More Parity symmetric photoemission spectra are ubiquitous in solid state research, being prevalent in many highly active areas, such as unconventional superconductors, nonmagnetic and antiferromagnetic topological insulators, and weakly relativistic collinear magnets, among others. The direct observation of parity-violating metallic Kramers degenerate bands has remained hitherto experimentally elusive. Here we observe the antiferromagnetic parity violation (APV) in the bandstructure of Mn$_2$Au thin films by using momentum microscopy with sub-$mu$m spatial resolution, allowing momentum resolved photoemission on single antiferromagnetic domains. The APV arises from breaking the P symmetry of the underlying crystal structure by the collinear antiferromagnetism, while preserving the joint space-time inverison PT -symmetry and in combination with large spin-orbit coupling. In addition, our work also demonstrates a novel tool to directly image the Neel vector direction by combining spatially resolved momentum microscopy with ab-initio calculations. △ Less

Submitted 23 October, 2021; originally announced October 2021.

Hard X-ray Photoelectron Momentum Microscopy and Kikuchi Diffraction on (In,Ga,Mn)As Thin Films

Authors: K. Medjanik, O. Fedchenko, O. Yastrubchak, J. Sadowski, M. Sawicki, L. Gluba, D. Vasilyev, S. Babenkov, S. Chernov, A. Winkelmann, H. J. Elmers, G. Schoenhense

Abstract: Recent advances in the brilliance of hard-X-ray beamlines and photoelectron momentum microscopy facilitate bulk valence-band mapping and core-level-resolved hard-X-ray photoelectron diffraction (hXPD) for structural analysis in the same setup. High-quality MBE-grown (In,Ga,Mn)As films represent an ideal testing ground, because of the non-centrosymmetric GaAs crystal structure itself and In and Mn… ▽ More Recent advances in the brilliance of hard-X-ray beamlines and photoelectron momentum microscopy facilitate bulk valence-band mapping and core-level-resolved hard-X-ray photoelectron diffraction (hXPD) for structural analysis in the same setup. High-quality MBE-grown (In,Ga,Mn)As films represent an ideal testing ground, because of the non-centrosymmetric GaAs crystal structure itself and In and Mn doping concentrations of few percent. Here we present results of k-mapping and hXPD for the title compound with 3% In and 2.5 or 5.6% Mn using hard X-ray photons (3 to 5 keV) at beamline P22 at PETRA III (DESY, Hamburg). Numerical processing (difference or ratio images) emphasizes subtle differences of hXPD patterns like the fingerprint-like hXPD-signatures of As and Ga sites. XPD calculations using the Bloch-wave method show a one-to-one correspondence with the measurements. The hXPD results reveal a predominant Ga substitutional site for Mn. Valence band mapping shows that the Fermi energy lies within the valence band and decreases as the Mn concentration increases. The results support the p-d Zener model of ferromagnetism in the title compound. In addition to the shift of the Fermi energy, the band splitting increases with increasing Mn content, which we attribute to an increase of many-body correlations with increasing metallicity of the sample. △ Less

Submitted 23 October, 2020; originally announced October 2020.

Band structure tuning of Heusler compounds revisited: Spin- and momentum-resolved electronic structure analysis of compounds with different band filling

Authors: S. Chernov, C. Lidig, O. Fedchenko, M. Jourdan, G. Schönhense, H. J. Elmers

Abstract: Spin-filtered time-of-flight photoelectron momentum microscopy reveals a systematic variation of the band structure within a series of highly spin-polarized ferromagnetic Heusler compounds with increasing number of valence electrons (Co2MnGa, Co2MnSi and Co2Fe0.4Mn0.6Si). The positions of the Fermi energy for minority and majority electrons deviate strongly from a simple band-filling model. Photoe… ▽ More Spin-filtered time-of-flight photoelectron momentum microscopy reveals a systematic variation of the band structure within a series of highly spin-polarized ferromagnetic Heusler compounds with increasing number of valence electrons (Co2MnGa, Co2MnSi and Co2Fe0.4Mn0.6Si). The positions of the Fermi energy for minority and majority electrons deviate strongly from a simple band-filling model. Photoexcitation at h$ν$=6.05 eV (4th harmonic of a Ti:sapphire laser) gives access to the spin-polarization texture P(EB,kx,ky) of the bulk bands in a (kx,ky)-range with diameter 1.4Å$^{-1}$ and energies from the Fermi energy EF to a binding energy of EB=2 eV. The minority bands of Co2MnGa cross the Fermi level, inhibiting half-metallicity; the crossing points allow a precise adjustment of experimental and theoretical majority and minority bands, requiring shifts in opposite directions. The top of the minority band lies only 0.15 eV above EF, i.e. Co2MnGa is much closer to being half-metallic than predicted by calculations. For half-metallic Co2MnSi and Co2Fe0.4Mn0.6Si clear minority band gaps are visible, the topmost occupied minority bands lie 0.5 and 0.35 eV below EF, in reasonable agreement with theory; the exchange splitting is significantly smaller than in theory. The comparison of all three compounds uncovers the surprising fact that with increasing number of valence electrons the frontier majority bands (close to EF) exhibit an increasing deficiency in filling, in comparison with the prediction of a DFT calculation. The same trend is visible in comparison with a DMFT calculation. For s-polarized excitation both half-metallic compounds exhibit nearly complete positive spin polarization close to EF, consistent with previous work in literature. △ Less

Submitted 11 October, 2019; originally announced October 2019.

Comments: 27 pages, 6 figures

Journal ref: Phys. Rev. B 103, 054407 (2021)

Narrow-Band Pulsed Electron Source Based on Near-Threshold Photoionization of Cs in a Magneto-Optical Trap

Authors: O. Fedchenko, S. Chernov, G. Schönhense, R. Hahn, D. Comparat

Abstract: The newly developed method of time-of-flight (ToF) momentum microscopy was used to analyse the cold electron emission from a Cs 3D magneto-optical trap (MOT). Three-step resonant photoionization was implemented via two intermediate states (6P3/2 pumped with 852 nm laser and 7S1/2 with 1470 nm) and a tuneable femtosecond Ti:sapphire laser for the final ionization step. The magnetic field of the MOT… ▽ More The newly developed method of time-of-flight (ToF) momentum microscopy was used to analyse the cold electron emission from a Cs 3D magneto-optical trap (MOT). Three-step resonant photoionization was implemented via two intermediate states (6P3/2 pumped with 852 nm laser and 7S1/2 with 1470 nm) and a tuneable femtosecond Ti:sapphire laser for the final ionization step. The magnetic field of the MOT is switched off during the photoionization step. The natural bandwidth of the fs-laser is reduced to 4 meV using optical spectral filters. Precise tuning of the photon energy makes it possible to observe the transition regime between direct photoemission into the open continuum and field induced ionization of highly-excited Rydberg states. The paths can be identified by their characteristic dependency on the extraction field and on the Ti:sapphire polarization. ToF analysis allowed us to disentangle the ionization paths and the dependence of the spatio-temporal distribution of the cold electrons on the polarization of the ionizing laser. △ Less

Submitted 21 November, 2019; v1 submitted 9 September, 2019; originally announced September 2019.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. A 101, 013424 (2020)

Momentum-Transfer Model of Valence-Band Photoelectron Diffraction

Authors: G. Schoenhense, K. Medjanik, S. Babenkov, D. Vasilyev, M. Ellguth, O. Fedchenko, S. Chernov, B. Schoenhense, H. -J. Elmers

Abstract: Owing to strongly enhanced bulk sensitivity, angle- or momentum-resolved photoemission using X-rays is an emergent powerful tool for electronic structure mapping. A novel full-field k-imaging method with time-of-flight energy detection allowed rapid recording of 4D (EB,k) data arrays (EB binding energy; k final-state electron momentum) in the photon-energy range of 400-1700eV. Arrays for the d-ban… ▽ More Owing to strongly enhanced bulk sensitivity, angle- or momentum-resolved photoemission using X-rays is an emergent powerful tool for electronic structure mapping. A novel full-field k-imaging method with time-of-flight energy detection allowed rapid recording of 4D (EB,k) data arrays (EB binding energy; k final-state electron momentum) in the photon-energy range of 400-1700eV. Arrays for the d-band complex of several transition metals (Mo, W, Re, Ir) reveal numerous spots of strong local intensity enhancement up to a factor of 5. The enhancement is confined to small (EB,k)-regions (dk down to 0.01 A-1; dEB down to 200 meV) and is a fingerprint of valence-band photoelectron diffraction. Regions of constructive interference in the (EB,k)-scheme can be predicted in a manner resembling the Ewald construction. A key factor is the transfer of photon momentum to the electron, which breaks the symmetry and causes a rigid shift of the final-state energy isosphere. Working rigorously in k-space, our model does not need to assume a localization in real space, but works for itinerant band states without any assumptions or restrictions. The role of momentum conservation in Fermi's Golden Rule at X-ray energies is revealed in a graphical, intuitive way. The results are relevant for the emerging field of time-resolved photoelectron diffraction and can be combined with standing-wave excitation to gain element sensitivity. △ Less

Submitted 15 June, 2018; originally announced June 2018.

Comments: 24 pages, 7 figures